专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014239263A 光半導体装置有权
标题翻译：光学半导体器件
公开(公告)号：JP2014239263A
公开(公告)日：2014-12-18
申请号：JP2014195532
申请日：2014-09-25
申请人：株式会社東芝 , Toshiba Corp
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/54 , H01L33/50 , H01L33/62
摘要：【課題】低コストで大量生産が可能であり、半導体発光素子と同程度に小型化することも可能な光半導体装置を提供する。【解決手段】第1の樹脂の層と、活性層を有する第2の樹脂の層と、が間に基板を介することなく積層され、前記活性層の1つの面は、前記第1の樹脂の層に面して配置され、前記活性層の側面は、前記第2の樹脂の層に包囲されていることを特徴とする光半導体装置が提供される。【選択図】図1
摘要翻译：要解决的问题：提供一种允许以低成本批量生产并且与半导体发光元件的尺寸相同程度的小型化的光学半导体器件。解决方案：提供一种光学半导体器件，其中第一树脂层和具有活性层的第二树脂层被层叠而不插入基板，有源层的一个表面设置成面对第一树脂层，并且有源层的侧表面被第二树脂包围层。

2. 发明专利

JP2014072494A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014072494A
公开(公告)日：2014-04-21
申请号：JP2012219729
申请日：2012-10-01
申请人： Toshiba Corp , 株式会社東芝
发明人： HONMA KYOKO , SHIMOKAWA KAZUO
IPC分类号： H01L23/12 , H01L21/56
CPC分类号： H01L23/48 , H01L21/568 , H01L21/78 , H01L23/3114 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2924/18162 , H01L2924/3511 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having higher reliability.SOLUTION: A semiconductor device includes: a semiconductor element 2 having a plurality of electrodes 2b on a primary surface 2a; a sealing resin 4 provided so as to cover at least a part of a side surface 2c of the semiconductor element 2; a first insulating layer 3 formed on the primary surface 2a of the semiconductor element 2, on the part of the side surface 2c of the semiconductor element 2, and on the sealing resin 4, having a first opening H1 to expose the plurality of electrodes 2b on the primary surface 2a, and having a fillet portion 3a on the part of the side surface 2c; a wiring layer 5 provided in the first opening H1 and on the first insulating layer 3 so as to be electrically connected to the plurality of electrodes 2b; and a second insulating layer 6 having a second opening H2 to surround a predetermined region of the wiring layer 5 and formed on the first insulating layer 3 and the wiring layer 5.
摘要翻译：要解决的问题：提供具有更高可靠性的半导体器件。解决方案：半导体器件包括：半导体元件2，其具有在主表面2a上的多个电极2b; 设置成覆盖半导体元件2的侧面2c的至少一部分的密封树脂4; 形成在半导体元件2的主面2a上的第一绝缘层3，半导体元件2的侧面2c的一部分上，密封树脂4上具有第一开口H1，露出多个电极2b 在主表面2a上，并且在侧表面2c的一部分上具有圆角部分3a; 设置在第一开口H1和第一绝缘层3上以与多个电极2b电连接的布线层5; 以及第二绝缘层6，其具有包围布线层5的预定区域并形成在第一绝缘层3和布线层5上的第二开口H2。

3. 发明专利

JP2008103467A Optical semiconductor device and manufacturing method of optical semiconductor device 有权
标题翻译：光学半导体器件的光学半导体器件的制造方法和光学半导体器件的制造方法
公开(公告)号：JP2008103467A
公开(公告)日：2008-05-01
申请号：JP2006283597
申请日：2006-10-18
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , UKITA YASUNARI
IPC分类号： H01L33/50 , H01L33/56 , H01L33/62
CPC分类号： H01L33/62 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L2224/27013 , H01L2224/29111 , H01L2224/32014 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83385 , H01L2224/83439 , H01L2224/83455 , H01L2224/83801 , H01L2224/92 , H01L2224/92247 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/12041 , H01L2924/15153 , H01L2924/15165 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/01014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which prevents the generation of short-circuit defect due to the creep up of bonding material for an optical semiconductor element. SOLUTION: The optical semiconductor device 1A is provided with: an optical semiconductor element 2 having a light emitting layer 2c provided on a first main surface M1, a first electrode 2e provided on the light emitting layer 2c while being smaller than the first main surface M1, and a second electrode 2g provided on a second main surface M2 different from the first main surface M1; a first lead unit 4 having a connecting region R1 which is a region to which the first electrode 2e is connected while being smaller than the first main surface M1, and a first groove 4b formed on an outer peripheral region R2 neighbored to the connecting region R1 while the first electrode 2e is connected to the connecting region R1 through the connecting member 3 and electrically connected to the first electrode 2e; and a second lead unit electrically connected to the second electrode 2g through a connecting member. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种光学半导体装置，其防止由于光半导体元件的接合材料的蠕变而产生短路缺陷。解决方案：光半导体器件1A设置有：具有设置在第一主表面M1上的发光层2c的光半导体元件2，设置在发光层2c上的第一电极2e，同时小于第一主表面M1 主表面M1和设置在与第一主表面M1不同的第二主表面M2上的第二电极2g; 第一引线单元4，其具有连接区域R1，该连接区域R1是第一电极2e连接的区域，同时小于第一主表面M1;以及第一凹槽4b，形成在与连接区域R1相邻的外周区域R2上而第一电极2e通过连接构件3连接到连接区域R1并电连接到第一电极2e; 以及通过连接构件与第二电极2g电连接的第二引线单元。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2006269751A Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006269751A
公开(公告)日：2006-10-05
申请号：JP2005085855
申请日：2005-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , USHIJIMA AKIRA
IPC分类号： H01L21/52
CPC分类号： H01L33/62 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/85 , H01L2224/04026 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29294 , H01L2224/29311 , H01L2224/32014 , H01L2224/32225 , H01L2224/83192 , H01L2224/838 , H01L2224/83801 , H01L2224/85 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/1033 , H01L2924/12041 , H01L2924/15787 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/48 , H01L2224/83205 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that reduces air bubbles produced at a join area between the semiconductor element and a substrate.
SOLUTION: The manufacturing method is disclosed for the semiconductor device including a mounting stage of mounting an LED chip 10 having a die-mount joined electrode 13 on a ceramic substrate 20. The mounting stage includes a stage of supplying solder paste 40 having Au-Sn eutectic solder particles 41 to the ceramic substrate, the stage of mounting the LED chip having an Sn film 14 formed on the die-mount joined substrate 13 on the solder paste, and a stage of joining the ceramic substrate and the LED chip to each other by fusing the Au-Sn eutectic solder particles and the Sn film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件的制造方法，该半导体器件减少在半导体元件和衬底之间的接合区域产生的气泡。解决方案：公开了用于半导体器件的制造方法，该半导体器件包括将具有管芯安装接合电极13的LED芯片10安装在陶瓷基板20上的安装台。安装台包括提供焊膏40的阶段， Au-Sn共晶焊料颗粒41到陶瓷基板，在焊膏上安装形成在模具安装接合基板13上的具有Sn膜14的LED芯片的阶段，以及将陶瓷基板和LED芯片接合的阶段通过熔融Au-Sn共晶焊料颗粒和Sn膜彼此相互连接。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005039242A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005039242A
公开(公告)日：2005-02-10
申请号：JP2004186041
申请日：2004-06-24
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMIOKA TAIZO , SHIMOKAWA KAZUO
IPC分类号： H01L23/34 , H01L21/56 , H01L23/31 , H01L23/36 , H01L23/492 , H01L23/498 , H01L25/04 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L25/072 , H01L23/3121 , H01L23/36 , H01L23/492 , H01L23/49861 , H01L24/37 , H01L24/40 , H01L24/84 , H01L24/91 , H01L25/0655 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/16 , H01L2224/371 , H01L2224/37147 , H01L2224/40225 , H01L2224/73153 , H01L2224/73253 , H01L2224/83104 , H01L2224/83801 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/13091 , H01L2924/15151 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To enable a metal plate to be exposed without a sealant removing operation. SOLUTION: A semiconductor device comprises: a plurality of semiconductor devices 9-12, one side of which is bonded and electrically connected to a wiring substrate 1; a plurality of metal plates 5-8, one end side of which is bonded to the other side of the plurality of semiconductor devices 9-12, with the other end side of which being bonded and electrically connected to the wiring substrate 1; a thermoplastic resin 3 for sealing to integrate the metal plates 5-8 in such a way to expose the side opposite to the side of the metal plates 5-8 which is bonded to the semiconductor devices 9-12; and a thermosetting resin 2 for sealing the periphery of the thermoplastic resin 3 and the semiconductor devices 9-12. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了使金属板在没有密封剂去除操作的情况下露出。解决方案：半导体器件包括：多个半导体器件9-12，其一侧被接合并电连接到布线基板1; 多个金属板5-8，其一端结合到多个半导体器件9-12的另一侧，其另一端被接合并电连接到布线基板1; 用于密封以将金属板5-8一体化以使与结合到半导体器件9-12的金属板5-8的侧面相对的一侧露出的热塑性树脂3; 以及用于密封热塑性树脂3和半导体器件9-12的周边的热固性树脂2。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2013201253A Semiconductor light emitting element and manufacturing method of the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013201253A
公开(公告)日：2013-10-03
申请号：JP2012068315
申请日：2012-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , NAKAYAMA TOSHIYA , ITO HISASHI , KIMURA AKIYA , SHIMOKAWA KAZUO , HIGUCHI KAZUTO , KOJIMA AKIHIRO , SHIMADA MIYOKO , SUGIZAKI YOSHIAKI , FURUYAMA HIDETO
IPC分类号： H01L33/62 , H01L33/38
CPC分类号： H01L33/38 , H01L27/15 , H01L33/0079
摘要： PROBLEM TO BE SOLVED: To provide a small size semiconductor light emitting element which is protected from an over-voltage and achieves high luminance, and to provide a manufacturing method of the semiconductor light emitting element.SOLUTION: According to one embodiment of the invention, a semiconductor light emitting element includes: a light emitting part; a first electrode; a second electrode; a first metal pillar; a second metal pillar; a sealing part; a rectifier element part; first wiring; and second wiring. The light emitting part includes: a first conductive type first semiconductor layer; a light emitting layer; and a second conductive type second semiconductor layer. The light emitting layer is provided on a first portion of the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The rectifier element part includes a rectifier part. The rectifier part is provided below the first semiconductor layer, and at least a part of the rectifier part does not overlap with the light emitting part when viewed in a first direction that leads from the first semiconductor layer to the second semiconductor layer.
摘要翻译：要解决的问题：提供一种小型半导体发光元件，其防过电压并实现高亮度，并提供半导体发光元件的制造方法。解决方案：根据本发明的一个实施例，半导体发光元件包括：发光部; 第一电极; 第二电极; 第一金属柱; 第二个金属支柱; 密封件; 整流元件部分; 第一线; 和第二布线。发光部包括：第一导电型第一半导体层; 发光层; 和第二导电类型的第二半导体层。发光层设置在第一半导体层的第一部分上。第二半导体层设置在发光层上。整流元件部分包括整流器部分。整流部设置在第一半导体层的下方，当从从第一半导体层引导到第二半导体层的第一方向观察时，整流部的至少一部分与发光部不重叠。

7. 发明专利

JP2012044205A Optical semiconductor device and method of manufacturing the same 有权
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2012044205A
公开(公告)日：2012-03-01
申请号：JP2011228364
申请日：2011-10-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/54 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device allowing mass production at a low cost and downsizing to the same extent as a semiconductor light-emitting device.SOLUTION: An optical semiconductor device comprises: a light-emitting layer 2 including a stack of semiconductor layers separated from a substrate after being epitaxially grown on the substrate; first and second electrodes 7 formed on a second primary surface of the light-emitting layer; a light-transmitting layer 5 provided on a first primary surface; a fluorescent layer 4 provided on the light-transmitting layer; first and second metal posts 8 provided on the first and second electrodes; and a sealing layer 10 that is provided on the second primary surface, is formed from a material having light shielding properties against the light emitted from the light-emitting layer, seals the first and second metal posts, and covers the side surfaces of the light-emitting layer. The side surfaces of the light-transmitting layer has a portion that is not covered with the fluorescent layer and the sealing layer. A part of the light emitted from the light-emitting layer undergoes wavelength conversion in the fluorescent layer and can be emitted to the outside, and the other part of the light can be emitted to the outside from the side surfaces of the light-transmitting layer.
摘要翻译：要解决的问题：提供一种光学半导体器件，其能够以低成本大量生产并且与半导体发光器件相同程度地缩小尺寸。解决方案：光学半导体器件包括：发光层2，其包括在衬底外延生长之后与衬底分离的半导体层堆叠; 形成在发光层的第二主表面上的第一和第二电极7; 设置在第一主表面上的透光层5; 设置在透光层上的荧光层4; 设置在第一和第二电极上的第一和第二金属柱8; 并且设置在第二主表面上的密封层10由对从发光层发射的光具有遮光性的材料形成，密封第一和第二金属柱，并且覆盖光的侧表面发光层。透光层的侧面具有不被荧光层和密封层覆盖的部分。从发光层发射的光的一部分在荧光层中经历波长转换并且可以发射到外部，并且光的另一部分可以从透光层的侧表面发射到外部。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2010258394A Optical semiconductor device and method of manufacturing inner lead 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2010258394A
公开(公告)日：2010-11-11
申请号：JP2009110088
申请日：2009-04-28
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , OKADA YASUHIDE
IPC分类号： H01L33/62 , H01L23/48
CPC分类号： H01L2224/48465
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which is improved in light extraction efficiency, and to provide a method of manufacturing inner leads constituting the optical semiconductor device.
SOLUTION: The optical semiconductor device includes: a case 5 which is a hollow cylinder body made of a white resin material and having an opening 6; a first inner lead 2A having an end enclosed in one side end of the case and having a plane mounting portion 10 opposite the opening; a second inner lead 2B electrically independent of the first inner lead and closing the opening one side end of the case together with the first inner lead; an optical semiconductor element 1 mounted on the plane mounting portion of the first inner lead and including, on a surface, a light-emitting layer and electrodes 1a and 1b electrically connected to the plane mounting portion of the first inner lead and the second inner lead through metal wires 4; and a sealing member 7 filled in the opening of the case, and made of a resin material having translucency to seal the optical semiconductor element. In the optical semiconductor device, a projection portion T which projects along the forming direction of the opening is provided at the end which is enclosed by the case of the first inner lead.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种光提取效率提高的光半导体装置，提供构成光半导体装置的内引线的制造方法。解决方案：光学半导体器件包括：壳体5，其为由白色树脂材料制成并具有开口6的中空筒体; 第一内引线2A，其端部包围在壳体的一个侧端中，并具有与开口相对的平面安装部分10; 与第一内引线电独立并且与第一内引线一起封闭壳体的开口一侧端的第二内引线2B; 安装在第一内引线的平面安装部分上的光半导体元件1，其表面上包括电连接到第一内引线和第二内引线的平面安装部分的电极1a和1b 通过金属线4; 以及密封构件7，其填充在壳体的开口中，并且由具有半透明性的树脂材料制成，以密封光学半导体元件。在光半导体装置中，沿着开口的成形方向突出的突出部T设置在被第一内引线的壳体包围的端部。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010021261A Method of manufacturing optical semiconductor device, optical semiconductor device, and method of manufacturing optical semiconductor apparatus 审中-公开
标题翻译：制造光学半导体器件的方法，光学半导体器件以及制造光学半导体器件的方法
公开(公告)号：JP2010021261A
公开(公告)日：2010-01-28
申请号：JP2008179060
申请日：2008-07-09
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE NAOTAKE , KOMATSU IZURU , SHIMOKAWA KAZUO , ITO HISASHI
IPC分类号： H01L33/48
CPC分类号： H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device, which suppresses inclination of an optical axis of projection light, unevenness of a light quantity distribution of the projection light, and a decrease in heat dissipating properties. SOLUTION: The method of manufacturing the optical semiconductor device include steps of: providing a resin layer on a light-emitting substrate 11 so as to cover a principle surface M11 of the light-emitting substrate, the light-emitting substrate 11 including a pair of electrodes 3a and 3b in each section of the principle surface M11, the resin layer including multiple holes each exposing two of the electrodes 3a and 3b located adjacent to each other but in the different sections K; providing post electrodes respectively on all the paired electrodes 3a and 3b formed in all the sections by filling a conductive material in the holes of the resin layer on the principal surface M11; and forming multiple optical semiconductor devices by cutting the light-emitting substrate 11 into sections, the light-emitting substrate provided with the post electrodes respectively on all the paired electrodes 3a and 3b formed in all the sections K. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造光学半导体器件的方法，其抑制投影光的光轴倾斜，投射光的光量分布的不均匀性和散热特性的降低。解决方案：制造光学半导体器件的方法包括以下步骤：在发光基板11上设置树脂层以覆盖发光基板的主面M11，发光基板11包括主表面M11的每个部分中的一对电极3a和3b，树脂层包括多个孔，每个露出彼此相邻但在不同部分K中的两个电极3a和3b; 通过在主表面M11上的树脂层的孔中填充导电材料，分别在形成在所有部分的所有成对电极3a和3b上提供柱状电极; 并且通过将发光基板11切割成多个部分来形成多个光学半导体器件，所述发光基板分别设置在形成在所有部分K中的所有成对电极3a和3b上。）2010，JPO＆INPIT

10. 发明专利

JP2006286666A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006286666A
公开(公告)日：2006-10-19
申请号：JP2005100331
申请日：2005-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , TOMIOKA TAIZO
IPC分类号： H01L21/60
CPC分类号： H01L24/83 , H01L2224/83192 , H01L2924/01322 , H01L2924/15787 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To achieve a reliable and low-cost good bonding even if it is the case where a semiconductor device is jointed to a substrate with coarse front surfaces, such as a ceramic substrate. SOLUTION: A method of manufacturing the semiconductor device includes a step of thermally compressing a golden bump 50 combined with ultrasonic wave heatment to the connection electrode 43 of the ceramic substrate 40, a step of pressurizing and flattening the golden bump 50 with a flat tool 60, and a step of supplying a flux on the golden bump 50. The method further includes a step of forming a solder film in the terminal of an LED and mounting the LED on the ceramic substrate 40, and a step of heating the ceramic substrate 40 and melting the solder film and joining the terminal and the connection electrode 43 of the LED. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使将半导体器件接合到具有粗糙表面的基板（例如陶瓷基板）的情况下，也可以实现可靠且低成本的良好的接合。解决方案：制造半导体器件的方法包括将与超声波加热结合的金色凸块50热压到陶瓷基板40的连接电极43的步骤，将金黄凸块50加压和平坦化的步骤平面工具60以及在金色凸块50上供给焊剂的步骤。该方法还包括在LED的端子中形成焊料膜并将LED安装在陶瓷基板40上的步骤，陶瓷基板40，并且熔化焊料膜并将LED的端子和连接电极43接合。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式