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1. 发明专利

JP2014239263A 光半導体装置有权
标题翻译：光学半导体器件
公开(公告)号：JP2014239263A
公开(公告)日：2014-12-18
申请号：JP2014195532
申请日：2014-09-25
申请人：株式会社東芝 , Toshiba Corp
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/54 , H01L33/50 , H01L33/62
摘要：【課題】低コストで大量生産が可能であり、半導体発光素子と同程度に小型化することも可能な光半導体装置を提供する。【解決手段】第1の樹脂の層と、活性層を有する第2の樹脂の層と、が間に基板を介することなく積層され、前記活性層の1つの面は、前記第1の樹脂の層に面して配置され、前記活性層の側面は、前記第2の樹脂の層に包囲されていることを特徴とする光半導体装置が提供される。【選択図】図1
摘要翻译：要解决的问题：提供一种允许以低成本批量生产并且与半导体发光元件的尺寸相同程度的小型化的光学半导体器件。解决方案：提供一种光学半导体器件，其中第一树脂层和具有活性层的第二树脂层被层叠而不插入基板，有源层的一个表面设置成面对第一树脂层，并且有源层的侧表面被第二树脂包围层。

2. 发明专利

JP2013077852A Light source device using semiconductor light-emitting device 有权
标题翻译：使用半导体发光器件的光源器件
公开(公告)号：JP2013077852A
公开(公告)日：2013-04-25
申请号：JP2013016224
申请日：2013-01-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , OBATA SUSUMU , NAKAYAMA TOSHIYA
IPC分类号： H01L33/64
摘要： PROBLEM TO BE SOLVED: To provide a light source device using a small semiconductor light-emitting device and having a high heat radiation property.SOLUTION: According to one embodiment, provided is a light source device having a semiconductor light-emitting device, a mounting substrate, a first connection material, and a second connection material. The semiconductor light-emitting device includes a light-emission part, a first conductive part, a second conductive part, an encapsulation part, and an optical layer. The mounting substrate includes a base substance, a first substrate electrode and a second substrate electrode. The connection materials electrically connect between the conductive parts and the substrate electrodes. The first and second conductive parts include first and second pillar parts electrically connected with an electrode of the light-emission part and erected on a second principal surface. The encapsulation part covers lateral faces of the first and second conductive parts. The optical layer includes a wavelength converter and is provided on an opposite side to the second principal surface, of a semiconductor lamination body. An area of the second substrate electrode is one hundred times as large as a cross sectional area of the second pillar part. A vertical length and a lateral length of a planar shape of the first substrate electrode and the second substrate electrode are equal to each other.
摘要翻译：解决的问题：提供一种使用小型半导体发光装置并具有高散热性的光源装置。解决方案：根据一个实施例，提供了一种具有半导体发光器件，安装衬底，第一连接材料和第二连接材料的光源器件。半导体发光器件包括发光部分，第一导电部分，第二导电部分，封装部分和光学层。安装基板包括基体，第一基板电极和第二基板电极。连接材料在导电部件和基板电极之间电连接。第一和第二导电部分包括与发光部分的电极电连接并竖立在第二主表面上的第一和第二柱部分。封装部分覆盖第一和第二导电部件的侧面。光学层包括波长转换器，并且设置在半导体层叠体的与第二主表面相对的一侧。第二基板电极的面积是第二柱部的截面积的一百倍。第一基板电极和第二基板电极的平面形状的垂直长度和横向长度彼此相等。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012164911A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2012164911A
公开(公告)日：2012-08-30
申请号：JP2011025812
申请日：2011-02-09
申请人： Toshiba Corp , 株式会社東芝
发明人： IZUKA MIYUKI , OBATA SUSUMU , KIMURA AKIYA , KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI , AKIMOTO YOSUKE
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device in which the polarity of external electrodes can be identified.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor layer; a p-side electrode; an n-side electrode; a p-side metal pillar; an n-side metal pillar; and an insulating material. The p-side metal pillar has a p-side external terminal that is exposed from the insulating material on a surface different from the surface onto which the p-side electrode is connected. The n-side metal pillar has an n-side external terminal that is exposed from the insulating material on a surface different from the surface onto which the n-side electrode is connected. The p-side external terminal and the n-side external terminal are different from each other in at least any of an area and a planar shape.
摘要翻译：要解决的问题：提供可以识别外部电极的极性的半导体发光器件。解决方案：半导体发光器件包括：半导体层; p侧电极; n侧电极; p侧金属支柱; n侧金属柱; 和绝缘材料。 p侧金属柱具有在与p侧电极连接的表面不同的表面上从绝缘材料露出的p侧外部端子。 n侧金属柱具有在与n侧电极连接的表面不同的表面上从绝缘材料露出的n侧外部端子。 p侧外部端子和n侧外部端子在至少任一区域和平面形状中彼此不同。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012146898A Light emitting device, light emitting module, and method for manufacturing light emitting device 有权
标题翻译：发光装置，发光模块及制造发光装置的方法
公开(公告)号：JP2012146898A
公开(公告)日：2012-08-02
申请号：JP2011005625
申请日：2011-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , AKIMOTO YOSUKE , HIGUCHI KAZUTO , OBATA SUSUMU , YASUDA HIDEFUMI , TAKAHASHI NOZOMI , TAMURA HIDEO
IPC分类号： H01L33/62
CPC分类号： H01L33/36 , H01L21/28 , H01L23/49805 , H01L33/486 , H01L33/50 , H01L33/52 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small and inexpensive light emitting device, a light emitting module, and a method for manufacturing the light emitting device.SOLUTION: According to an embodiment, a light emitting device comprises a semiconductor layer, a p-side electrode, an n-side electrode, a first insulation layer, a p-side wiring layer, an n-side wiring layer, and a second insulation layer. The semiconductor layer includes a first face, a second face formed opposite to the first face, and a light emitting layer. The p-side electrode is provided in a region having the light emitting layer on the second face. The n-side electrode is provided in a region not including the light emitting layer on the second face. The p-side wiring layer has a p-side external terminal exposed from the second insulation layer on a third face in an orientation different from those of the first face and the second face. The n-side wiring layer has an n-side external terminal exposed from the second insulation layer on the third face same as that of the p-side external terminal.
摘要翻译：要解决的问题：提供一种小型廉价的发光器件，发光模块和用于制造发光器件的方法。解决方案：根据实施例，发光器件包括半导体层，p侧电极，n侧电极，第一绝缘层，p侧布线层，n侧布线层，和第二绝缘层。半导体层包括第一面，与第一面相对的第二面和发光层。 p侧电极设置在第二面上具有发光层的区域中。 n侧电极设置在不包括第二面上的发光层的区域中。 p侧配线层的p侧外部端子以与第一面和第二面不同的方向在第三面上从第二绝缘层露出。 n侧配线层具有从与p侧外部端子相同的第三面上的第二绝缘层露出的n侧外部端子。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011066349A Method of decomposing package 审中-公开
标题翻译：分解包装的方法
公开(公告)号：JP2011066349A
公开(公告)日：2011-03-31
申请号：JP2009217891
申请日：2009-09-18
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , SOGO TAKAHIRO , MIYAGI TAKESHI
IPC分类号： H01L21/56
摘要： PROBLEM TO BE SOLVED: To provide a method of decomposing a package capable of decomposing a package device by a simple method, and preventing damage of an internal structure part.
SOLUTION: In this method of decomposing a package, a soft etchant 32 is made to easily permeate in an etching process by subjecting an optional surface of a decomposing object region A1 of an outer resin part 19 of a package device 10 to grinding work by a router to be roughened. The package device is immersed in a soft etchant containing sulfuric acid and hydrogen peroxide and stored in a vessel 33, and cleaned by pure water by ending the etching process when the decomposition of the resin at a necessary part is ended.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过简单的方法分解能够分解包装装置的包装的方法，并且防止内部结构部件的损坏。解决方案：在这种分解包装的方法中，通过使包装装置10的外部树脂部分19的分解对象区域A1的任选表面经受磨削，使蚀刻剂32容易地渗透到蚀刻工艺中，工作由路由器粗糙。包装装置浸入含有硫酸和过氧化氢的软蚀刻剂中并储存在容器33中，并且当需要部分的树脂分解结束时，通过结束蚀刻工艺，用纯水进行清洗。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010205771A Semiconductor device, and manufacturing method therefor 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010205771A
公开(公告)日：2010-09-16
申请号：JP2009046623
申请日：2009-02-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , SUGIZAKI YOSHIAKI , SOGO TAKAHIRO , MIYAGI TAKESHI
IPC分类号： H01L23/08 , H01L23/20 , H01L23/29 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being made compact and of reducing a member cost.
SOLUTION: A micromachine 1 as the semiconductor device includes a substrate 10, an MEMS element 16 provided on a main face of the substrate 10, an inner inorganic sealing film 21 for covering the MEMS element 16 via a hollow part 17 containing an inorganic material, provided on the main face of the substrate 10 and storing gas, and having an opening shape part 21a communicated with the hollow part 17, an organic sealing film 22 containing an organic material, formed on the inner inorganic sealing film 21, and for closing the opening shape part 21a, an outer inorganic sealing film 23 containing an inorganic material, and formed on the organic sealing film 22, to cover the organic sealing film 22, and a reinforcement layer 24 provided on the outer inorganic sealing film 23 by a thin-film forming process similar to a process for providing the organic sealing film 22, and for covering the outer inorganic sealing film 23.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够紧凑化并降低部件成本的半导体器件。解决方案：作为半导体器件的微加工机1包括基板10，设置在基板10的主面上的MEMS元件16，用于通过中空部17覆盖MEMS元件16的内部无机密封膜21，无机材料，设置在基板10的主面上并储存气体，并且具有与中空部17连通的开口形状部21a，形成在内部无机密封膜21上的含有机材料的有机密封膜22和用于封闭开口形状部分21a，包含无机材料的外部无机密封膜23，并形成在有机密封膜22上以覆盖有机密封膜22，以及加强层24，其设置在外部无机密封膜23上与用于提供有机密封膜22的方法类似的薄膜形成工艺，以及用于覆盖外部无机密封膜23.版权所有：（C）2010，JPO＆INPIT

7. 发明专利

JP2009226501A Micromechanical apparatus and manufacturing method of micromechanical apparatus 审中-公开
标题翻译：微生物装置的微生物装置和制造方法
公开(公告)号：JP2009226501A
公开(公告)日：2009-10-08
申请号：JP2008071573
申请日：2008-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , INOUE MICHINOBU , MIYAGI TAKESHI
IPC分类号： B81B3/00 , B81C1/00 , H01G5/16 , H01H49/00 , H01H59/00
摘要： PROBLEM TO BE SOLVED: To provide a micromechanical apparatus can reduce noise of an output signal by constituting it to easily settle vibration of a micromachine.
SOLUTION: This micromechanical apparatus 1 is provided with: a substrate 11 having a signal wire 15 on its principal surface; the micromachine 16 that is provided on the principal surface of the substrate 11 astride a signal wire 15, constitutes a beam-like portion, is formed with an opening 16b whose dimension in the side of the signal wire 15 is larger than the dimension of the other side of the signal wire 15, wherein the beam-like portion is elastically deformed to approach to or separate from the signal wire by the operation of an electric field, and changes its electric characteristics with the deformation; and sealing bodies 21 and 22 that are provided on the principal surface of the substrate 11 and cover the micromachine via a hollow part.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种微机械装置，可以通过构成微型机械的振动来降低输出信号的噪声。解决方案：该微机械装置1设置有：在其主表面上具有信号线15的基板11; 设置在基板11的主表面上跨越信号线15的微机械机构16构成波束状部分，其形成有开口16b，开口16b的尺寸在信号线15的侧面尺寸大于信号线15的另一侧，其中梁状部分通过电场的操作而弹性变形以接近信号线或与信号线分离，并且随着变形而改变其电特性; 以及密封体21和22，其设置在基板11的主表面上并且经由中空部覆盖微机械。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009226498A Micromechanical apparatus and manufacturing method of micromechanical apparatus 审中-公开
标题翻译：微生物装置的微生物装置和制造方法
公开(公告)号：JP2009226498A
公开(公告)日：2009-10-08
申请号：JP2008071570
申请日：2008-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , INOUE MICHINOBU , MIYAGI TAKESHI
IPC分类号： B81B3/00 , B81C1/00 , H01G5/16 , H01H59/00
摘要： PROBLEM TO BE SOLVED: To provide a micromechanical apparatus can reduce noise of an output signal by suppressing vibration of a micromachine; and a manufacturing method of the micromechanical apparatus.
SOLUTION: This micromechanical apparatus 1 is provided with: a substrate 11 having a signal wire 15 on its principal surface; the micromachine 16 that is provided on the principal surface of the substrate 11, has a beam portion 16 astride the signal wire 15, wherein the beam portion is elastically deformed to approach to or separate from the signal wire by the operation of an electric field, and changes its electric characteristics with the deformation of the beam portion; a regulation bridge 18 that is disposed at an opposite side to the signal wire 15 of the beam portion and regulates the deformation of the beam portion separating from the signal wire; and a sealing body 20 that is provided on the principal surface of the substrate 11 and covers the micromachine via a hollow part 17.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种微机械装置可以通过抑制微机械的振动来降低输出信号的噪声; 以及微机械装置的制造方法。解决方案：该微机械装置1设置有：在其主表面上具有信号线15的基板11; 设置在基板11的主表面上的微加工机构16具有横跨信号线15的梁部分16，其中，梁部分通过电场的操作而弹性变形以接近信号线或与信号线分离，并且随着梁部分的变形而改变其电特性; 调节桥18，其布置在与梁部分的信号线15相对的一侧，并且调节与信号线分离的光束部分的变形; 以及密封体20，其设置在基板11的主表面上并且经由中空部17覆盖微机械。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2008078561A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008078561A
公开(公告)日：2008-04-03
申请号：JP2006258930
申请日：2006-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , KOMATSU IZURU , IGUCHI TOMOHIRO , KITANI TOMOYUKI , HIRAHARA MASAKO , UKITA YASUNARI , HIGUCHI KAZUTO
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L23/49562 , H01L23/3135 , H01L23/49524 , H01L24/18 , H01L24/24 , H01L24/40 , H01L24/82 , H01L24/84 , H01L2224/18 , H01L2224/24246 , H01L2224/32245 , H01L2224/73267 , H01L2224/82039 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/181 , H01L2924/19043 , H01L2924/3512 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and its manufacturing method, which can be easily manufactured and whose internal resistance can be made further lower. SOLUTION: The semiconductor device comprises: a semiconductor element 3; a lead 4 having an electrode connected to an electrode provided on the semiconductor element 3; and a metal film 6 for electrically connecting the electrode of the semiconductor element 3 and the electrode of the lead 4. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2014175362A Semiconductor light-emitting element and method of manufacturing the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014175362A
公开(公告)日：2014-09-22
申请号：JP2013044547
申请日：2013-03-06
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA AKIYA , HIGUCHI KAZUTO , OBATA SUSUMU
IPC分类号： H01L33/02
CPC分类号： H01L33/502 , H01L33/0079 , H01L33/501 , H01L33/504 , H01L2933/0041
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element high in mounting productivity, and a method of manufacturing the same.SOLUTION: A semiconductor light-emitting element 110 includes a first conductive pillar 41, a second conductive pillar 42, a first semiconductor layer 10, a light-emitting layer 30, a second semiconductor layer 20, a sealing part 85, and a translucent layer 70. The first semiconductor layer 10 and the light-emitting layer 30 are provided on the first conductive pillar 41. The second semiconductor layer 20 is provided on the light-emitting layer 30 and on the second conductive pillar 42. The sealing part 85 covers respective side surfaces of the first and second conductive pillars 41 and 42. The translucent layer 70 is provided on the second semiconductor layer 20 and is light-transmissive. In the translucent layer 70, the hardness of an upper surface portion is higher than that of a lower portion between the upper surface portion and the second semiconductor layer 20.
摘要翻译：要解决的问题：提供高安装生产率的半导体发光元件及其制造方法。解决方案：半导体发光元件110包括第一导电柱41，第二导电柱42，第一导电柱半导体层10，发光层30，第二半导体层20，密封部85和透光性层70.第一半导体层10和发光层30设置在第一导电柱41上。第二半导体层20设置在发光层30和第二导电柱42上。密封部分85覆盖第一和第二导电柱41和42的各个侧表面。半透明层70设置在第二半导体层20并且是透光的。在半透明层70中，上表面部分的硬度高于上表面部分和第二半导体层20之间的下部的硬度。

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