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1. 发明专利

JP2013149679A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013149679A
公开(公告)日：2013-08-01
申请号：JP2012007318
申请日：2012-01-17
申请人： Toshiba Corp , 株式会社東芝
发明人： MIKI HIROKO , WADA MAKOTO , SHIBATA HIDEKI , KOJIMA AKIHIRO
IPC分类号： H01L23/532 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving electromigration resistance of Cu-based wiring formed by etching.SOLUTION: A wiring 15 composed of a Cu-based material has a cross-sectional shape in which a top width is narrower than a bottom width. A barrier film composed of a MnSiO film or a CuSiN film is formed on a side face of the wiring. The wiring and the barrier film are coated with a silicon nitride film 18.
摘要翻译：要解决的问题：提供能够提高通过蚀刻形成的Cu基布线的电迁移阻力的半导体器件。解决方案：由Cu基材料构成的布线15具有横截面形状，其顶部宽度比底部宽度。在布线的侧面形成由MnSiO膜或CuSiN膜构成的阻挡膜。布线和阻挡膜涂覆有氮化硅膜18。

2. 发明专利

JP2011253999A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2011253999A
公开(公告)日：2011-12-15
申请号：JP2010127968
申请日：2010-06-03
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , SHIBATA HIDEKI , KOJIMA AKIHIRO , ISHIKAWA MASAYUKI , TAMURA HIDEO , KOMATSU TETSUO
IPC分类号： H01L33/48
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/508 , H01L33/58 , H01L2224/11 , H01L2924/0002 , H01L2924/3511 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is easily usable as a linear or planar light source.SOLUTION: A semiconductor light emitting device has plural semiconductor layers, a first electrode, a second electrode, an insulating layer, a first wiring layer, a second wiring layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted on a curved surface while being bent. The plural semiconductor layers are separated from one another, and each of the semiconductor layers contains a light emission layer. The first electrode is provided in an area on a second principal surface of the semiconductor layer where a light emission layer is contained, and the second electrode is provided in an area on the second principal surface of the semiconductor layer where no light emission layer is contained. The insulating layer is provided at a second principal surface side of the semiconductor layer. The first wiring layer is provided at an opposite side surface of the insulating layer to the semiconductor layer and connected to the first electrode. The second wiring layer is provided at the opposite side surface of the insulating layer to the semiconductor layer and connected to the second electrode. The area of the opposite side surface to the second electrode is larger than the connection surface of the second electrode.
摘要翻译：要解决的问题：提供一种容易用作线性或平面光源的半导体发光器件。解决方案：半导体发光器件具有多个半导体层，第一电极，第二电极，绝缘层，第一布线层，第二布线层，第一金属柱，第二金属柱和树脂层并且被弯曲地安装在弯曲表面上。多个半导体层彼此分离，并且每个半导体层包含发光层。第一电极设置在半导体层的包含发光层的第二主表面上的区域中，并且第二电极设置在不包含发光层的半导体层的第二主表面上的区域中。绝缘层设置在半导体层的第二主表面侧。第一布线层设置在绝缘层的与半导体层相对的侧表面上并连接到第一电极。第二布线层设置在绝缘层的与半导体层相对的侧表面上并连接到第二电极。与第二电极相对的侧表面的面积大于第二电极的连接面。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011253998A Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011253998A
公开(公告)日：2011-12-15
申请号：JP2010127967
申请日：2010-06-03
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , SHIBATA HIDEKI , KOJIMA AKIHIRO , ISHIKAWA MASAYUKI , TAMURA HIDEO , KOMATSU TETSUO
IPC分类号： H01L33/50
CPC分类号： H01L33/0066 , H01L27/15 , H01L33/0075 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/48 , H01L33/486 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of suppressing color variation.SOLUTION: The semiconductor light-emitting device according to an embodiment comprises a light-emitting chip and a phosphor layer. The light-emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first wiring layer, a second wiring layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer comprises a first principal surface, a second principal surface formed opposite to the first principal surface, and a light-emitting layer. The phosphor layer is provided on the first principal surface, and has a larger plane size than that of the light-emitting chip.
摘要翻译：解决的问题：提供能够抑制颜色变化的半导体发光装置。解决方案：根据实施例的半导体发光器件包括发光芯片和荧光体层。发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一布线层，第二布线层，第一金属柱，第二金属柱和树脂层。半导体层包括第一主表面，与第一主表面相对形成的第二主表面和发光层。荧光体层设置在第一主表面上，并且具有比发光芯片的平面尺寸更大的平面尺寸。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011204840A Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011204840A
公开(公告)日：2011-10-13
申请号：JP2010069716
申请日：2010-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI , SHIBATA HIDEKI , TAMURA HIDEO , KOMATSU TETSUO , ISHIKAWA MASAYUKI
IPC分类号： H01L33/44
CPC分类号： H01L33/486 , H01L33/50 , H01L33/504 , H01L2224/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that facilitates miniaturization, and ensures improved productivity and efficiency, and also to provide a method for manufacturing the device.SOLUTION: The semiconductor light emitting device includes a semiconductor layer having a light emitting layer, a first electrode and a second electrode arranged on a second major surface of the semiconductor layer, an insulating film arranged on the second major surface side of the semiconductor layer and having a first opening reaching a first electrode and a second opening reaching a second electrode, a first wiring arranged on an opposite side with respect to the semiconductor layer and inside the first opening in the insulating film, a second wiring arranged on an opposite side with respect to the semiconductor layer and inside the second opening in the insulating film, a first metal pillar arranged in the first wiring, a second metallic pillar arranged in the second wiring, a resin for covering the circumferences of the first and second metal pillars, and a fluorescent layer arranged to face the first major surface of the semiconductor layer and including various types of fluorescent materials having different peak wavelengths of emission light.
摘要翻译：要解决的问题：提供一种便于小型化并确保提高生产率和效率的半导体发光器件，并且还提供一种制造器件的方法。解决方案：半导体发光器件包括具有发光层的半导体层布置在所述半导体层的第二主表面上的第一电极和第二电极，布置在所述半导体层的第二主表面侧上并且具有到达第一电极的第一开口和到达第二电极的第二开口的绝缘膜布置在相对于半导体层的相反侧并且位于绝缘膜中的第一开口内的第一布线，布置在相对于半导体层的相对侧和绝缘膜中的第二开口内的第二布线，布置在第一布线中的第一金属柱，布置在第二布线中的第二金属柱 ng，用于覆盖第一和第二金属柱的周边的树脂和布置成面对半导体层的第一主表面的荧光层，并且包括具有不同峰值波长的发射光的各种类型的荧光材料。

5. 发明专利

JP2010141176A Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2010141176A
公开(公告)日：2010-06-24
申请号：JP2008316752
申请日：2008-12-12
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , SHIBATA HIDEKI , ISHIKAWA MASAYUKI , TAMURA HIDEO , KOMATSU TETSUO , KOJIMA AKIHIRO
IPC分类号： H01L33/48 , H01L33/36
CPC分类号： H01L33/62 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L25/0753 , H01L33/0079 , H01L33/34 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/58 , H01L2224/02375 , H01L2224/0401 , H01L2224/05012 , H01L2224/05552 , H01L2224/05555 , H01L2224/05571 , H01L2224/06132 , H01L2224/06152 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041 , H01L2933/0066 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device which is easily made compact and improved in mass-productivity, and to provide a method for manufacturing the same. SOLUTION: The present invention relates to the method for manufacturing the light-emitting device includes steps of: forming a multilayer body including a light-emitting layer so that a first surface thereof may be adjacent to a first surface side of a translucent substrate; forming an insulating film on a second surface side opposite to the first surface of the multilayer body, the insulating film having first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal covering the insulating film and the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; forming a p-side metal pillar on the p-side metal interconnect layer and an n-side metal pillar on the n-side metal interconnect layer, respectively; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is exposed between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed. The light-emitting device is also provided. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供容易制造的批量生产率的发光装置，并提供其制造方法。解决方案：本发明涉及发光器件的制造方法，其包括以下步骤：形成包括发光层的多层体，使得其第一表面可以与半透明的第一表面侧相邻基质; 在与所述多层体的第一表面相反的第二表面侧上形成绝缘膜，所述绝缘膜在设置在所述第二表面上的p侧电极和n侧电极上具有第一和第二开口; 形成覆盖绝缘膜和第一和第二开口的种子金属; 在种子金属上形成p侧金属互连层和n侧金属互连层; 在p侧金属配线层上形成p侧金属柱，在n侧金属配线层上形成n侧金属柱; 通过除去暴露在p侧金属互连层和n侧金属互连层之间的种子金属的一部分，将种子金属分离成p侧种子金属和n侧种子金属; 并在去除种子金属的空间中形成树脂。还提供了发光装置。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2007053133A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007053133A
公开(公告)日：2007-03-01
申请号：JP2005235318
申请日：2005-08-15
申请人： Toshiba Corp , 株式会社東芝
发明人： HAYASHI HIROMI , SHIBATA HIDEKI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76861 , H01L21/0273 , H01L21/3105 , H01L21/31144 , H01L21/32115 , H01L21/76814 , H01L21/76816 , H01L21/76826 , H01L21/76831 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing increased electric resistance due to decrease in electric conductivity of a wiring caused by dispersion of electrons due to unevenness of the surface of a metal wiring because of scale-down of the semiconductor device, and to provide a manufacturing method thereof. SOLUTION: A wiring groove 28t and a connection hole 26h are formed on a low transmittivity insulation film 22 on a semiconductor substrate 10. A barrier metal 24 is formed in the inside of the groove, whose surface is not necessarily smooth. To solve the problem, the surface of the barrier metal is smoothed by circulating a CMP (chemical mechanical polishing) slurry in the inside of the groove. Since polishing grains and an etching liquid are contained in the CMP slurry, the convex portion of the barrier metal having unevenness can be polished and removed. After that, Cu is deposited and the Cu on a portion other than the groove is removed, and thus, a Cu wiring 28 having small surface roughness can be formed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件，其能够抑制由于由于金属布线的表面的不均匀性而导致的由于电子分散引起的布线的导电性降低而导致的电阻增加半导体器件，并提供其制造方法。解决方案：在半导体衬底10上的低透射率绝缘膜22上形成布线槽28t和连接孔26h。阻挡金属24形成在槽的内部，其表面不一定是光滑的。为了解决这个问题，通过在槽的内部循环CMP（化学机械抛光）浆料来使阻挡金属的表面平滑化。由于在CMP浆料中含有抛光颗粒和蚀刻液体，所以可以抛光和去除具有凹凸的阻挡金属的凸部。之后，沉积Cu，除去Cu之外的Cu，可以形成表面粗糙度小的Cu布线28。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005167160A Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005167160A
公开(公告)日：2005-06-23
申请号：JP2003407888
申请日：2003-12-05
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA MASAKI , SHIBATA HIDEKI
IPC分类号： H01L21/768 , H01L21/3205 , H01L21/822 , H01L23/48 , H01L23/52 , H01L23/532 , H01L27/04
CPC分类号： H01L23/53238 , H01L21/76838 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method that can decrease signal delay and improve reliability. SOLUTION: The semiconductor device has multilayer wiring with insulation layers 25-1 to 25-4 and wiring layers 21-1 to 21-4 alternately laminated on the main surface of a semiconductor substrate 11, wherein as to the resistance of each of the wiring layers, an upper layer has a lower or equal value between two vertically adjacent wiring layers, and further, the top layer has lower resistance than the bottom layer, and as to the relative dielectric constant of the insulation layer, an upper layer has a higher or equal constant between two vertically adjacent insulation layers, and the top layer is higher than the bottom layer. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以减少信号延迟并提高可靠性的半导体器件及其制造方法。解决方案：半导体器件具有绝缘层25-1至25-4以及交替层叠在半导体衬底11的主表面上的布线层21-1至21-4的多层布线，其中对于每个的上层在两个垂直相邻的布线层之间具有较低或相等的值，此外，顶层具有比底层更低的电阻，并且对于绝缘层的相对介电常数，上层在两个垂直相邻的绝缘层之间具有较高或相等的常数，并且顶层高于底层。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003068851A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2003068851A
公开(公告)日：2003-03-07
申请号：JP2002170820
申请日：2002-06-12
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOOKA YOSHIAKI , SHIBATA HIDEKI , MIYAJIMA HIDESHI , TOMIOKA KAZUHIRO
IPC分类号： H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a low permitivity insulating film can be used as an interlayer insulating film of multilayer wiring structure, and a manufacturing method of the device.
SOLUTION: The semiconductor device having a plurality of wiring layers is provided with a first insulating film formed in a laminar type, a first wiring layer including a plurality of wirings formed on the first insulating film, a second wiring layer including a plurality of wirings formed on an upper surface of the first wiring layer or above it, and a second insulating film which is arranged on upper surfaces of the first insulating film and the first wiring layer which are formed as a plane, and formed between adjacent wirings in the second wiring layer and between the wiring lower side of the second wiring layer and the first insulating film and the first wiring layer. At least a part of the second insulating film between the wiring of the first wiring layer and the wiring of the second wiring layer has relative permitivity lower than that of the first insulating film.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种其中可以使用低介电常数绝缘膜作为多层布线结构的层间绝缘膜的半导体器件及其装置的制造方法。解决方案：具有多个布线层的半导体器件设置有形成为层状的第一绝缘膜，包括形成在第一绝缘膜上的多个布线的第一布线层，形成有多个布线的第二布线层在第一布线层的上表面或其上方，以及布置在形成为平面的第一绝缘膜和第一布线层的上表面上并且形成在第二布线中的相邻布线之间的第二绝缘膜并且在第二布线层的布线下侧与第一绝缘膜和第一布线层之间。所述第一布线层的布线与所述第二布线层的布线之间的所述第二绝缘膜的至少一部分具有比所述第一绝缘膜低的相对的介电常数。

9. 发明专利

JP2013084989A Semiconductor light-emitting device and light-emitting device 有权
标题翻译：半导体发光器件和发光器件
公开(公告)号：JP2013084989A
公开(公告)日：2013-05-09
申请号：JP2013002814
申请日：2013-01-10
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , SHIBATA HIDEKI , ISHIKAWA MASAYUKI , TAMURA HIDEO , KOMATSU TETSUO , KOJIMA AKIHIRO
IPC分类号： H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and a light-emitting device that are capable of being easily downsized and have improved mass productivity.SOLUTION: A semiconductor light-emitting device has a first surface and a second surface on the opposite side of the first surface, and includes a stack on the first surface side that does not include a substrate and has a light-emitting layer; a p-side electrode and an n-side electrode that are provided on the stack; a p-side extraction electrode that is provided on the second surface side, has an end portion capable of external connection, and is connected to the p-side electrode; an n-side extraction electrode that is provided on the second surface side, has an end portion capable of external connection, and is connected to the n-side electrode; an insulating film that is provided so as to contact side surfaces of the p-side extraction electrode and side surfaces of the n-side extraction electrode, and constitutes a support with the p-side extraction electrode and the n-side extraction electrode; and a resin layer that is provided on the first surface side of the stack without interposing the substrate therebetween.
摘要翻译：解决的问题：提供能够容易地小型化并且具有提高的批量生产率的半导体发光器件和发光器件。解决方案：半导体发光器件具有在第一表面的相对侧上的第一表面和第二表面，并且在第一表面侧上包括不包括衬底并具有发光层的叠层 ; 设置在所述堆叠上的p侧电极和n侧电极; 设置在第二表面侧的p侧引出电极具有能够外部连接的端部，并连接到p侧电极; 设置在第二表面侧的n侧引出电极具有能够外部连接的端部，并且连接到n侧电极; 设置为接触p侧引出电极和n侧引出电极的侧表面的绝缘膜，并且与p侧引出电极和n侧引出电极构成支撑体; 以及树脂层，其设置在堆叠的第一表面侧，而不在其间插入基板。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2011249501A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2011249501A
公开(公告)日：2011-12-08
申请号：JP2010120260
申请日：2010-05-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , SHIBATA HIDEKI , KOJIMA AKIHIRO , ISHIKAWA MASAYUKI , TAMURA HIDEO , KOMATSU TETSUO
IPC分类号： H01L33/64 , H01L33/62
CPC分类号： H01L33/647 , H01L27/153 , H01L33/62 , H01L2224/16 , H01L2933/0066
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device with excellent heat dissipation properties.SOLUTION: According to an embodiment, a light-emitting device comprises a light-emitting chip, an external terminal composed of a metallic material, and a wiring board on which the light-emitting chip is mounted via the external terminal. The light-emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulator layer, a first wiring layer, a second wiring layer, a first metal pillar, a second metal pillar, and a resin layer. The wiring board includes a wiring that is connected to the first metal pillar and the second metal pillar via the external terminal, and a heat dissipation material that is provided in contact with the wiring under the wiring.
摘要翻译：要解决的问题：提供具有优异散热性能的发光装置。 <解决方案>根据实施例，发光装置包括发光芯片，由金属材料构成的外部端子和经由外部端子安装有发光芯片的布线板。发光芯片包括半导体层，第一电极，第二电极，绝缘体层，第一布线层，第二布线层，第一金属柱，第二金属柱和树脂层。布线板包括经由外部端子与第一金属柱和第二金属柱连接的布线，以及与布线下方的布线接触的散热材料。版权所有（C）2012，JPO＆INPIT

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