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1. 发明专利

JP2015056646A 半導体装置及び半導体モジュール审中-公开
标题翻译：半导体器件和半导体器件
公开(公告)号：JP2015056646A
公开(公告)日：2015-03-23
申请号：JP2013191176
申请日：2013-09-13
申请人：株式会社東芝 , Toshiba Corp
发明人： KURI YUUJI , SEKIYA HIRONORI , SASAKI HARUKA , KOTANI KAZUYA , TADA NOBUMITSU , MATSUMURA HITOTSUGU , IGUCHI TOMOHIRO
IPC分类号： H01L21/52 , H01L23/48 , H01L25/07 , H01L25/18
CPC分类号： H01L24/83 , H01L23/24 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/0345 , H01L2224/03462 , H01L2224/04026 , H01L2224/05582 , H01L2224/05583 , H01L2224/05584 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/29111 , H01L2224/29139 , H01L2224/2929 , H01L2224/29294 , H01L2224/29339 , H01L2224/32013 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83447 , H01L2224/8346 , H01L2224/8384 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/01029 , H01L2924/0105 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要：【課題】半導体素子と基板との接合部の信頼性を向上させることができる半導体装置及び半導体モジュールを提供すること。【解決手段】実施形態に係る半導体装置は、半導体素子と、金属膜と、を含む。前記半導体素子は、第1面及び第1面とは反対側の第2面を有する。前記金属膜は、前記半導体素子の前記第2面に設けられる。前記金属膜は、Crを含む。前記半導体素子は、Siの動作保証温度よりも高い動作保証温度の材料を含んでいても良い。【選択図】図1
摘要翻译：要解决的问题：提供一种能够提高半导体元件和基板之间的接合部的可靠性的半导体器件，并提供半导体模块。解决方案：半导体器件包括半导体元件和金属膜。半导体元件具有在第一表面的相对侧上的第一表面和第二表面。金属膜设置在半导体元件的第二表面上。金属膜含有Cr。半导体元件可以包含具有比Si的操作保证温度更高的操作保证温度的材料。

2. 发明专利

JP2013222885A Inverter module 审中-公开
标题翻译：逆变器模块
公开(公告)号：JP2013222885A
公开(公告)日：2013-10-28
申请号：JP2012094679
申请日：2012-04-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , KOTANI KAZUYA , KURI YUUJI , SEKIYA HIRONORI
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
CPC分类号： H01L2224/34 , H01L2924/13055 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an inverter module that allows downsizing, improving assemblability, and ensuring the strength of a resin case.SOLUTION: An inverter module comprises: an upper-arm circuit section 26a and a lower-arm circuit section 26b; a resin case 52 surrounding circumferences of the upper-arm and lower-arm circuit sections; a first conductor 27 disposed on the resin case and extending along one sides of the upper-arm and lower-arm circuit sections; a second conductor 28 provided to be stacked on the first conductor with sandwiching an insulating member therebetween and extending along the one side of the lower-arm circuit section; and an output conductor 29 disposed on the resin case on the opposite site of the first and second conductors with sandwiching the upper-arm and lower-arm circuit sections and extending along the other sides of the upper-arm and lower-arm circuit sections. A tip portion of the first conductor projecting from a stacked portion is connected to the upper-arm circuit section by a connection conductor 31, the second conductor is connected to the lower-arm circuit section by the connection conductor 31, and the upper-arm and lower-arm circuit sections are connected to the output conductor by the connection conductor 31.
摘要翻译：要解决的问题：提供一种能够实现小型化，提高组装性和确保树脂壳体的强度的逆变器模块。解决方案：逆变器模块包括：上臂电路部分26a和下臂电路部分26b; 围绕上臂和下臂电路部分周围的树脂壳体52; 第一导体27设置在树脂壳体上并沿着上臂和下臂电路部分的一侧延伸; 第二导体28，被设置为堆叠在第一导体上，其间具有绝缘构件，并且沿着下臂电路部分的一侧延伸; 以及布置在第一和第二导体的相对位置上的树脂壳体上的输出导体29，夹着上臂和下臂电路部分并且沿着上臂和下臂电路部分的另一侧延伸。从叠层部突出的第一导体的前端部通过连接导体31与上臂电路部连接，第二导体通过连接导体31与下臂电路部连接，上臂并且下臂电路部分通过连接导体31连接到输出导体。

3. 发明专利

JP2012241255A Thermal diffusion material and method for producing the same 审中-公开
标题翻译：热扩散材料及其制造方法
公开(公告)号：JP2012241255A
公开(公告)日：2012-12-10
申请号：JP2011114602
申请日：2011-05-23
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTANI SATORU , KURI YUUJI , SASAKI KEIICHI
IPC分类号： C22C49/14 , C22C9/00 , C22C9/02 , C22C9/04 , C22C21/00 , C22C21/02 , C22C21/06 , C22C21/12 , C22C21/14 , C22C21/16 , C22C21/18 , C22C47/14 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide a thermal diffusion material in which fine carbon fibers are uniformly dispersed in a metal sintered body while each of the fine carbon fibers maintains a fiber shape without being pulverized and with which heat of a thermal body can be effectively dissipated, and to provide a method for producing the thermal diffusion material.SOLUTION: There are disclosed the thermal diffusion material including fine carbon fibers uniformly dispersed within a matrix of a metal sintered body, and the method for producing the thermal diffusion material, including the steps of: (A) preparing a dispersion liquid including fine carbon fibers; (B) introducing an organic functional group on a surface of a metal particle comprising a metal material constituting the metal sintered body; (C) adding the metal particle in which the functional group has been introduced into the dispersion liquid to prepare a composite particle including the metal particle having a surface on which the fine carbon fibers are adsorbed via the functional group; and (D) sintering the composite particle.
摘要翻译：解决的问题：提供一种热分散材料，其中细碳纤维均匀地分散在金属烧结体中，而每个细碳纤维保持纤维形状而不被粉碎，并且热体的热量可以有效地消散，并提供制造热扩散材料的方法。解决方案：公开了包括均匀分散在金属烧结体的基体内的细碳纤维的热扩散材料和制造热扩散材料的方法，包括以下步骤：（A）制备分散液，包括细碳纤维; （B）在构成金属烧结体的金属材料的金属颗粒的表面上引入有机官能团; （C）将其中引入了官能团的金属颗粒加入到分散液中以制备包含具有通过官能团吸附有细碳纤维的表面的金属颗粒的复合颗粒; 和（D）烧结复合颗粒。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011033205A Heat storage system, heat storage system plant and power generation system 审中-公开
标题翻译：热存储系统，热存储系统设备和发电系统
公开(公告)号：JP2011033205A
公开(公告)日：2011-02-17
申请号：JP2009176909
申请日：2009-07-29
申请人： Toshiba Corp , 株式会社東芝
发明人： SHINDO TAKAHIKO , SASAKI KEIICHI , KURI YUUJI , HARAGUCHI SATOSHI , WAKAMATSU KENGO , KUBOTANI SATORU , MURAYAMA KIYOKO
IPC分类号： F28D20/02
CPC分类号： Y02E60/145
摘要： PROBLEM TO BE SOLVED: To provide a practical heat storage system, and a heat storage system plant and power generation system utilizing the heat storage system.
SOLUTION: This heat storage system includes a plurality of containers respectively filled with latent heat materials different from each other in phase transition temperatures, and arranged in series in order of higher phase transition temperature of the latent heat material, first inlets and first outlets respectively formed on the plurality of containers to allow a heat medium to store heat in the latent heat materials to flow therein, and second inlets and second outlets to allow a heat medium to radiate heat from the latent heat materials storing heat, to flow therefrom. At least the first container and second container adjacent to each other among the plurality of containers are connected in a state that the first outlet of the first container and the first inlet of the second container are connected, and the second inlet of the first container and the second outlet of the second container are connected to configure the heat storage system.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供实用的蓄热系统，以及利用蓄热系统的蓄热系统设备和发电系统。解决方案：该储热系统包括分别充满相变温度相互不同的潜热材料的多个容器，并且按照潜热材料的较高相变温度，第一入口和第一入口的顺序串联布置分别形成在多个容器上的出口，以允许热介质在潜热材料中存储热量流入其中，第二入口和第二出口允许热介质从存储热的潜热材料辐射热量，从而流过。至少在多个容器中彼此相邻的第一容器和第二容器在第一容器的第一出口和第二容器的第一入口连接的状态下连接，第一容器的第二入口和第二容器的第二出口被连接以配置蓄热系统。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010118533A Semiconductor device, and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010118533A
公开(公告)日：2010-05-27
申请号：JP2008291178
申请日：2008-11-13
申请人： Toshiba Corp , 株式会社東芝
发明人： TAN TORONRON , KURI YUUJI , OBE TOSHIHARU , NINOMIYA TAKESHI , SEKIYA HIRONORI
IPC分类号： H01L23/40 , H01L21/331 , H01L29/73
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a long-life and inexpensive semiconductor device which has superior electric characteristics and thermal conduction characteristics, and to provide a method of manufacturing the same. SOLUTION: The module semiconductor device includes a semiconductor chip 1, an emitter electrode 2 joined to an emitter side of the semiconductor chip 1, a collector electrode 3 joined to a collector side of the semiconductor chip 1, a first heat dissipating body 4 joined to the opposite side of the emitter electrode 2 to the semiconductor chip 1, a second heat dissipating body 5 joined to the opposite side of the collector electrode 3 to the semiconductor chip 1, and joining materials (2a, 2b, 2c, 3a, 3b, 3c) for joining the semiconductor chip 1, the emitter electrode 2, and first heat dissipating body 4, and the semiconductor chip 1, collector electrode 3, and second heat dissipating body 5, the joining materials (2a, 2b, 2c, 3a, 3b, 3c) being previously formed on surfaces of the emitter electrode 2 and the collector electrode 3, and the first heat dissipating body 4 and the second heat dissipating body 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供具有优异的电特性和导热特性的长寿命且廉价的半导体器件，并提供其制造方法。解决方案：模块半导体器件包括半导体芯片1，连接到半导体芯片1的发射极侧的发射极2，与半导体芯片1的集电极侧接合的集电极3，第一散热体 4连接到半导体芯片1的发射极电极2的相反侧，与半导体芯片1接合到集电极3的相对侧的第二散热体5和接合材料（2a，2b，2c，3a），3b，3c），用于接合半导体芯片1，发射极电极2和第一散热体4，半导体芯片1，集电电极3和第二散热体5，接合材料（2a，2b，2c），3a，3b，3c）预先形成在发射电极2和集电极3的表面上，以及第一散热体4和第二散热体5.版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009235487A Porous material and method for producing the same 审中-公开
标题翻译：多孔材料及其制造方法
公开(公告)号：JP2009235487A
公开(公告)日：2009-10-15
申请号：JP2008082939
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： HARAGUCHI SATOSHI , KAMEDA TSUNEJI , ITO YOSHIYASU , SHINDO TAKAHIKO , HAYAMI TOKUSUKE , KURI YUUJI , TANAKA AKIRA
IPC分类号： C23C28/04 , B01D69/12 , B01D71/02 , B01D71/04 , G10K11/162
摘要： PROBLEM TO BE SOLVED: To provide a porous material which has pores of submicron order and in which a pressure drop does not occur when a medium is allowed to flow through the pores. SOLUTION: The porous material is constituted of a first porous layer having non-oriented first pores penetrating from the surface to the rear face and a second porous layer which is formed on the first porous layer and has second pores penetrating from the surface to the rear face and one-dimensionally oriented from the surface to the rear face. Further, the first pores communicate with the second pores, and the pore diameters of the first pores are set to be larger than the pore diameters of the second pores. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有亚微米级的孔的多孔材料，并且当允许介质流过孔隙时不会发生压降。解决方案：多孔材料由具有从表面到后面贯穿的非取向第一孔的第一多孔层和形成在第一多孔层上并具有从表面贯穿的第二孔的第二多孔层构成到后表面并且从表面到后表面一维地定向。此外，第一孔与第二孔连通，第一孔的孔径设定为大于第二孔的孔径。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009220039A Porous film complex structure and manufacturing method of micropore in porous body 审中-公开
标题翻译：多孔微孔多孔膜复合结构与制备方法
公开(公告)号：JP2009220039A
公开(公告)日：2009-10-01
申请号：JP2008068200
申请日：2008-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： SHINDO TAKAHIKO , ITO YOSHIYASU , KURI YUUJI , KAMEDA TSUNEJI , HARAGUCHI SATOSHI , HAYAMI TOKUSUKE , TANAKA AKIRA , MATSUSHIRO TAKESHI , SOMA TAKAHIRO , KOBAYASHI SHUICHIRO
IPC分类号： B01D69/10 , B01D69/04 , B01D69/12 , B01D71/02 , C04B41/85
摘要： PROBLEM TO BE SOLVED: To provide a porous film complex structure keeping an initial function over a long period such as removing contaminant over a long period.
SOLUTION: The porous film complex structure is provided with the cylindrically formed porous body 2 having a porous material in a hollow part, and a cylindrical porous film 3 set to cover an inner periphery of the cylindrical porous body 2 with a porosity at least different from that of the cylindrical porous body 2.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供长时间保持初始功能的多孔膜复合结构，例如长时间除去污染物。解决方案：多孔膜复合结构设置有在中空部分具有多孔材料的圆柱形多孔体2和圆柱形多孔膜3，其被设置成覆盖圆柱形多孔体2的内周，孔隙率与圆柱形多孔体2的最小不同。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2005069777A Bonding strength determination method of unleaded solder, and device 有权
标题翻译：焊接强度的测定方法及其设备
公开(公告)号：JP2005069777A
公开(公告)日：2005-03-17
申请号：JP2003297752
申请日：2003-08-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KURI YUUJI , KURONUMA YOICHIRO
IPC分类号： G01N23/225 , B23K1/00 , G01N21/84 , G01N33/20 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To determine easily the bonding strength of unleaded solder without requiring a high-grade professional knowledge and a skilled technology. SOLUTION: This bonding strength determination method of the unleaded solder includes a metallographic structure observing process (ST4) for observing the metallographic structure of the surface of the unleaded solder, and a structure parameter comparing process (ST5) for comparing the observation result acquired in the metallographic structure observing process with a structure parameter for showing that the bonding strength of the unleaded solder is not lowered. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：容易地确定无铅焊料的接合强度，而不需要高等级的专业知识和技术熟练的技术。解决方案：这种无铅焊料的接合强度测定方法包括用于观察无铅焊料表面的金相组织的金相组织观察方法（ST4）和用于比较观察结果的结构参数比较过程（ST5）在金相结构观察过程中获得的结构参数用于表明无铅焊料的结合强度不降低。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2015055618A 半導体装置の検査方法及び半導体装置の検査装置审中-公开
标题翻译：半导体器件检测方法和半导体器件检测器件
公开(公告)号：JP2015055618A
公开(公告)日：2015-03-23
申请号：JP2013191108
申请日：2013-09-13
申请人：株式会社東芝 , Toshiba Corp
发明人： KURI YUUJI , KOTANI KAZUYA , SASAKI HARUKA , HIRATSUKA DAISUKE , MATSUMURA HITOTSUGU , KITAZAWA HIDEAKI , ADACHI KENJI
IPC分类号： G01N25/72
CPC分类号： G01N25/72 , G01R31/311
摘要：【課題】半導体素子と基板とが複数の金属微粒子を含む接合材で接合された半導体装置について、半導体装置の良否判定を正確に行うことができる半導体装置の検査方法及び半導体装置の検査装置を提供すること。【解決手段】実施形態に係る半導体装置の検査方法は、半導体素子と基板とが複数の金属微粒子を含む接合材で接合された半導体装置を加熱して、前記半導体装置における熱分布の画像データを経時的に取得する工程と、前記画像データに基づきフラクタル次元の時間変化を求める工程と、前記フラクタル次元の時間変化の傾きを求める工程と、前記傾きと、予め設定された基準の傾きと、を比較して前記半導体装置の良否を判定する工程と、を備える。【選択図】図1
摘要翻译：要解决的问题：提供半导体器件检查方法和半导体器件检查装置，其能够精确地确定通过包含多个金属微粒通过的接合材料将半导体元件和基板配置为使得半导体元件和基板结合在一起的半导体器件通过 /fails.SOLUTION：根据实施例的半导体器件检查方法包括以下步骤：通过包含多个金属微粒的接合材料将半导体元件与基板接合的半导体器件加热，并获取图像数据随着时间的推移，半导体器件的热分布; 基于图像数据获得分形维数的时间变化; 计算分形维数的时间变化倾斜度; 以及通过将所述倾斜度与预设的参考倾斜度进行比较来确定所述半导体器件是否通过或失败。

10. 发明专利

JP2014060341A Semiconductor device and semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2014060341A
公开(公告)日：2014-04-03
申请号：JP2012205776
申请日：2012-09-19
申请人： Toshiba Corp , 株式会社東芝
发明人： SASAKI HARUKA , HIRATSUKA DAISUKE , YAMAMOTO ATSUSHI , KOTANI KAZUYA , KURI YUUJI , MATSUMURA HITOTSUGU
IPC分类号： H01L21/52
CPC分类号： H01L23/53238 , H01L21/76841 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/2917 , H01L2224/29171 , H01L2224/29172 , H01L2224/32225 , H01L2224/32503 , H01L2224/8381 , H01L2224/83815 , H01L2224/83825 , H01L2924/01322 , H01L2924/1301 , H01L2924/15747 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which has high heat resistance and high reliability and which can be manufactured at low cost.SOLUTION: A semiconductor device 10 according to an embodiment comprises a mounting substrate 11, a semiconductor chip 12, a joining layer 13 and a soft metal layer 14b. The semiconductor chip 12 is joined to the mounting substrate 11 via the joining layer 13 and the soft metal layer 14b. The joining layer 13 includes an alloy layer primarily consisting of any metal selected from Sn, Zn, In, or an alloy of Sn, Zn, In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti, V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti, V and any metal selected from Sn, Zn, In. The soft metal layer 14b contains any metal selected from Cu, Al, Zn, Ag.
摘要翻译：要解决的问题：提供一种具有高耐热性和高可靠性并且可以低成本制造的半导体器件。解决方案根据实施例的半导体器件10包括安装基板11，半导体芯片12，接合层13和软金属层14b。半导体芯片12经由接合层13和软金属层14b与安装基板11接合。接合层13包括主要由选自Sn，Zn，In的任何金属或Sn，Zn，In以及选自Cu，Ni，Ag，Cr，Zr，Ti，V中的任何金属的合金中的合金层，选自Cu，Ni，Ag，Cr，Zr，Ti，V以及选自Sn，Zn，In的任何金属的任何金属的合金。软金属层14b含有选自Cu，Al，Zn，Ag的任何金属。

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