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1. 发明专利

JP2013150006A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2013150006A
公开(公告)日：2013-08-01
申请号：JP2013085925
申请日：2013-04-16
申请人： Toshiba Corp , 株式会社東芝
发明人： ISOMOTO KENJI , FURUKAWA CHISATO
IPC分类号： H01L33/16 , C30B29/40 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device that allows reduction in variation in characteristic distribution in a wafer surface.SOLUTION: A light-emitting device includes: a GaP substrate in which Zn and Si having a concentration lower than the Zn concentration and having a concentration larger than or equal to 1×10cmand lower than or equal to 1.5×10cmare doped; and a stack formed on the GaP substrate, having at least a light-emitting layer, and containing In(GaAl)P (where, 0≤x≤1 and 0≤y≤1). The GaP substrate can transmit emission light from the light-emitting layer.
摘要翻译：要解决的问题：提供一种能够减少晶片表面的特性分布的变化的发光装置。解决方案：发光装置包括：GaP衬底，其中Zn和Si的浓度低于Zn浓度并且具有大于或等于1×10cm的浓度并且低于或等于1.5×10cm的掺杂; 和形成在GaP基板上的堆叠体，其至少具有发光层，并且含有In（GaAl）P（其中，0≤x≤1且0≤y≤1）。 GaP衬底可以发射来自发光层的发射光。

2. 发明专利

JP2010219320A Method of manufacturing light-emitting element and light-emitting element 审中-公开
标题翻译：制造发光元件和发光元件的方法
公开(公告)号：JP2010219320A
公开(公告)日：2010-09-30
申请号：JP2009064651
申请日：2009-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： ISOMOTO KENJI , FURUKAWA CHISATO
IPC分类号： H01L33/30 , H01L21/02 , H01L21/205
CPC分类号： C30B29/40 , C30B23/02 , C30B25/18 , C30B29/42 , C30B29/44 , H01L33/0079 , H01L33/025 , H01L33/16
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting element capable of reducing the fluctuation of characteristic distribution in a wafer plane, and the light-emitting element. SOLUTION: The method includes steps of: preparing a first inclined substrate cut out from a single crystal ingot pulled up in a direction inclined to a first plane orientation by slicing the ingot in a direction substantially vertical to the pull-up direction; preparing a second inclined substrate with a principal plane in a plane orientation substantially parallel to that of the first inclined substrate; growing a lamination body having a light-emitting layer on the second inclined substrate; and adhering the lamination body and the first inclined substrate while superposing and heating them, then removing the second inclined substrate. The plane orientation of the first inclined substrate is one of a plain orientation inclined from (100) plane to a [011] direction and a plain orientation inclined from a (-100) plane to a [0-1-1] direction, and the plane orientation of the second inclined substrate is the other of the plain orientation inclined from a (100) plane to the [011] direction and the plain orientation inclined from the (-100) plane to the [0-1-1] direction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够减少晶片平面中的特性分布的波动和发光元件的发光元件的制造方法。解决方案：该方法包括以下步骤：通过在与上拉方向基本垂直的方向上切割锭来制备从沿着与第一平面取向倾斜的方向上拉的单晶锭切出的第一倾斜基板; 准备具有基本上平行于第一倾斜衬底的平面取向的主平面的第二倾斜衬底; 在所述第二倾斜基板上生长具有发光层的层压体; 并且在层叠体和第一倾斜基板重叠加热的同时粘合，然后除去第二倾斜基板。第一倾斜基板的平面取向是从（100）面向[011]方向倾斜的平坦取向和从（-100）面向[0-1-1]方向倾斜的平坦取向的平面取向，以及第二倾斜基板的平面取向是从（100）面向[011]方向倾斜的平坦取向中的另一个，并且平面取向从（-100）面倾斜到[0-1-1]方向。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010062267A Surface emitting device and method for manufacturing the same, and optical transmission module 审中-公开
标题翻译：表面发射装置及其制造方法和光传输模块
公开(公告)号：JP2010062267A
公开(公告)日：2010-03-18
申请号：JP2008225211
申请日：2008-09-02
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FUJIMOTO KENJI , FURUKAWA CHISATO , TAGAMI YUICHI
IPC分类号： H01S5/183 , G02B6/42 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting device which can inhibit waveform degradation by mode dispersion, and to provide a method for manufacturing the same, and an optical transmission module. SOLUTION: There is provide the surface emitting device including: a substrate; a laminate which is provided on the substrate and has a light emitting layer; an insulating film which is provided so as to cover at least a periphery part of a principal surface of the laminate and a side surface of the light emitting layer; an electrode which is provided so as to cover a part of the principal surface of the laminate adjacent to the insulating film, and a part of a surface of the insulating film, and has an opening part serving as a light-emitting window part; and an optical member which is provided in the opening part and has a lens whose size is smaller than that of the light-emitting window part and which can condense the light discharged from the light emitting layer. There are also provided the method for manufacturing the surface emitting device, and the optical transmission module. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过模式色散抑制波形劣化的表面发射装置，以及提供一种其制造方法和光传输模块。解决方案：提供表面发射器件，包括：衬底; 层叠体，其设置在所述基板上并具有发光层; 绝缘膜，被设置成覆盖层叠体的主表面的至少周边部分和发光层的侧面; 设置成覆盖与绝缘膜相邻的层叠体的主面的一部分的电极和绝缘膜的一部分表面，具有作为发光窗部的开口部; 以及光学构件，其设置在所述开口部中并且具有尺寸小于所述发光窗部的尺寸的透镜，并且能够冷凝从所述发光层排出的光。还提供了制造表面发射器件和光传输模块的方法。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007165728A Light-emitting device and lighting device for visible light communication 审中-公开
标题翻译：用于可见光通信的发光装置和照明装置
公开(公告)号：JP2007165728A
公开(公告)日：2007-06-28
申请号：JP2005362282
申请日：2005-12-15
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L31/02 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/62
CPC分类号： H04B10/116 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H04B10/1141 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a lighting device for visible light communication in which visible light emitted from a simple and practically useful light-emitting device as white light illumination is utilized for communication. SOLUTION: The lighting device has a light emission control unit 13 which generates a modulation electrical signal for transmitting information; a light-emitting device 21 comprising an LED chip which radiates intensity-modulated exciting light in response to the modulation electrical signal, a phosphor which absorbs the exciting light and radiates blue light in a fluorescent manner, and a phosphor which absorbs the exciting light and radiates, in a fluorescent manner, yellow light of which a 1/10 afterglow time is short in comparison with blue light, and which is composed with the blue light to become illuminating light; and a light-receiver 17 capable of receiving the yellow light. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种用于可见光通信的照明装置，其中使用从简单实用的发光装置发出的可见光作为白光照明用于通信。解决方案：照明装置具有产生用于发送信息的调制电信号的发光控制单元13; 包括响应于调制电信号辐射强度调制的激发光的LED芯片的发光装置21，以荧光方式吸收激发光并辐射蓝光的荧光体和吸收激发光的荧光体，以及以荧光方式照射与蓝光相比1/10余辉时间短的黄光，并且由蓝光组成以成为照明光; 以及能够接收黄光的光接收器17。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2010092965A Light emitting device and process of fabricating the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2010092965A
公开(公告)日：2010-04-22
申请号：JP2008259481
申请日：2008-10-06
申请人： Toshiba Corp , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/30
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/02 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/20 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which easily achieves high intensity while reducing optical absorption, and also to provide a process of fabricating the same.
SOLUTION: A light emitting device is provided with: a first substrate having conductivity; an underlying layer; an adhesion metal layer which bonds one principal surface of the underlying layer to the first substrate; a mask layer consisting of an insulator which is provided on the other principal surface of the underlying layer and has a window; and a laminate provided selectively on the underlying layer exposed to the window and having a light emitting layer. The process of fabricating the same is also provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在减少光吸收的同时容易实现高强度并且还提供其制造方法的发光器件。解决方案：发光器件设置有：具有导电性的第一衬底; 底层; 附着金属层，其将下层的一个主表面与第一基底结合; 由绝缘体组成的掩模层，所述绝缘体设置在所述下层的另一个主表面上并具有窗口; 以及选择性地设置在暴露于窗口并具有发光层的下层上的层压板。还提供了其制造方法。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008153584A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2008153584A
公开(公告)日：2008-07-03
申请号：JP2006342559
申请日：2006-12-20
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/06 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/08 , H01L33/42 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can effectively emit a light-emitting layer constituting portion located in the surrounding parts. SOLUTION: The semiconductor light-emitting element includes a plurality of light-emitting layer forming portions 30 which have a p-n junction, capable of emitting light of a specified wavelength λ and are separated by transparent resin films 43 formed on the side; a metal film 28 which has an ohmic connecting portion and a reflecting portion located on a first surface of the light-emitting layer comprising a portion 30; a conductive substrate 11 jointed with the metal film 28; a lower electrode 55 which is formed on a surface of the conductive substrate 11 opposed to a surface of the jointed metal film 28; a transparent electrode 51 which is connected to the second surface, opposed to first surface of the light-emitting layer composing portion 30 and is substantially transparent at the specified wavelength; and an upper electrode 53, which is formed on the upper portion on the second surface of the light-emitting-layer composing portion 30 via the transparent electrode 51. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以有效地发射位于周围部分中的发光层构成部分的半导体发光元件。解决方案：半导体发光元件包括具有p-n结的多个发光层形成部分30，其能够发射特定波长λ的光并且由形成在该侧面上的透明树脂膜43分离; 金属膜28具有欧姆连接部分和位于发光层的第一表面上的反射部分，该第一表面包括部分30; 与金属膜28连接的导电基板11; 形成在导电基板11的与接合金属膜28的表面相对的表面上的下电极55; 与第二表面相连的透明电极51，与发光层构成部分30的第一表面相对并且在指定波长处基本上是透明的; 以及通过透明电极51形成在发光层构成部30的第二面的上部的上部电极53.（C）2008，JPO＆INPIT

7. 发明专利

JP2004048040A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2004048040A
公开(公告)日：2004-02-12
申请号：JP2003301289
申请日：2003-08-26
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： SUGAWARA HIDETO , FURUKAWA CHISATO
IPC分类号： H01L33/08 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device in which the ununiformity of emission is eliminated.
SOLUTION: The semiconductor light emitting device is provided with a light emitting element; a first fluorescent material absorbing primary light emitted from the light emitting element to emit light of a first wavelength different from the primary light; and a second fluorescent material absorbing the primary light emitted from the light emitting element to emit light of a second wavelength different from the primary light. The first fluorescent material is provided on a first region of the light emitting surface of the light emitting element. The second fluorescent material is provided on a second region, different from the first region, of the light emitting surface of the light emitting element.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供消除不均匀性的半导体发光器件。解决方案：半导体发光器件设置有发光元件; 吸收从所述发光元件发射的初级光以发射不同于所述初级光的第一波长的光的第一荧光材料; 以及第二荧光材料，其吸收从所述发光元件发射的初级光，以发射不同于所述初级光的第二波长的光。第一荧光材料设置在发光元件的发光表面的第一区域上。第二荧光材料设置在发光元件的发光表面的与第一区域不同的第二区域上。版权所有（C）2004，JPO

8. 发明专利

JP2012009619A Light-emitting element and semiconductor wafer 审中-公开
标题翻译：发光元件和半导体波长
公开(公告)号：JP2012009619A
公开(公告)日：2012-01-12
申请号：JP2010144107
申请日：2010-06-24
申请人： Toshiba Corp , 株式会社東芝
发明人： FURUKAWA CHISATO
IPC分类号： H01L33/30 , H01L33/48
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element and a semiconductor wafer, which are capable of easily obtaining a desired chip size and capable of easily forming a desired chip shape.SOLUTION: A light-emitting element includes a substrate, an adhesive layer provided on the substrate, first conductive type layers, light-emitting layers provided on the first conductive type layers, and second conductive type layers provided on the light-emitting layers, and further comprises a plurality of protrusions provided on the adhesive layer, first electrodes provided on the second conductive type layers, a translucent resin layer provided around the protrusions, and an overcoat electrode that is provided on the translucent resin layer and connects the first electrodes each provided on the plurality of protrusions to each other. The substrate, the translucent resin layer, and the overcoat electrode are each exposed at the side surface of the light-emitting element.
摘要翻译：解决的问题：提供能够容易地获得期望的芯片尺寸并且能够容易地形成期望的芯片形状的发光元件和半导体晶片。解决方案：发光元件包括基板，设置在基板上的粘合层，第一导电类型层，设置在第一导电类型层上的发光层和设置在发光的第二导电类型层上并且还包括设置在粘合剂层上的多个突起，设置在第二导电类型层上的第一电极，设置在突起周围的半透明树脂层和设置在透光性树脂层上并连接第一每个设置在多个突起上的电极彼此。基板，透光性树脂层和外涂层电极均在发光元件的侧面露出。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011171327A Light emitting element, method for manufacturing the same, and light emitting device 审中-公开
标题翻译：发光元件，其制造方法和发光装置
公开(公告)号：JP2011171327A
公开(公告)日：2011-09-01
申请号：JP2010030931
申请日：2010-02-16
申请人： Toshiba Corp , 株式会社東芝
发明人： FURUKAWA CHISATO
IPC分类号： H01L33/22
CPC分类号： H01L33/20 , H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element that is enhanced in efficiency of light extraction and easily made thin, to provide a method of manufacturing the same that improves mass productivity, and to provide a light emitting device.
SOLUTION: The light emitting element includes a semiconductor stack including a light emitting layer, and a translucent substrate where the semiconductor stack is provided on an upper surface side and unevenness with its average height and average pitch uniformly distributed is provided on a side surface. There are also provided the method of manufacturing the same, and the light emitting device.
COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2009016748A Semiconductor light-emitting device and its manufacturing method 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2009016748A
公开(公告)日：2009-01-22
申请号：JP2007179932
申请日：2007-07-09
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/30 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and its manufacturing method which is capable of reducing air gaps in an adhesion interface conventionally generated at irregular intervals in adhesion process, and collects the air gaps in a specific point, to minimize the air gaps in adhesion parts except the point. SOLUTION: A p-InGaAs clad layer 2, an AlInGaP-MQW active layer 3, a n-InGaAs clad layer 4 and an InGaP adhesion layer 5 are sequentially crystal-grown on a GaAs substrate 1 of a growth substrate. A very shallow groove-like recess which extends to ends of the substrate lengthwise and crosswise is formed like a stripe in the surface of the InGaP adhesion layer 5. The p-GaP substrate 10 which has light transparency to the light-emitting from the AlInGaP-MQW active layer 3 is made to be opposed so as to face the GaAs substrate 1, so that the groove-like concave part 6 may intervene between them. Thereafter, the p-GaP substrate 10 is bonded to the InGaP adhesion layer 5 by thermal compression bond or the like. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体发光装置及其制造方法，其能够减少通常在粘附处理中以不规则间隔产生的粘合界面中的气隙，并且收集特定点的气隙，以尽量减少附着部位的气隙。解决方案：在生长衬底的GaAs衬底1上依次晶体生长p-InGaAs包覆层2，AlInGaP-MQW有源层3，n-InGaAs覆盖层4和InGaP粘合层5。在InGaP粘合层5的表面中形成像条纹一样沿纵向和横向延伸到衬底的端部的非常浅的槽状凹部。对于从AlInGaP发光的光具有透光性的p-GaP衬底10 使MQW有源层3相对于GaAs衬底1，使得槽状凹部6可以在它们之间插入。此后，通过热压接等将p-GaP基板10接合到InGaP粘合层5。版权所有（C）2009，JPO＆INPIT

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