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1. 发明授权

US4877509A Semiconductor wafer treating apparatus utilizing a plasma 失效
标题翻译：利用等离子体的半导体晶片处理装置
公开(公告)号：US4877509A
公开(公告)日：1989-10-31
申请号：US269688
申请日：1988-11-10
申请人： Toshiaki Ogawa , Nobuo Fujiwara , Kenji Kawai , Teruo Shibano , Hiroshi Morita , Kyusaku Nishioka
发明人： Toshiaki Ogawa , Nobuo Fujiwara , Kenji Kawai , Teruo Shibano , Hiroshi Morita , Kyusaku Nishioka
IPC分类号： H01L21/302 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32293 , C23C16/511 , H01J37/32192 , H01J37/32678
摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.
摘要翻译：公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

2. 发明授权

US4915979A Semiconductor wafer treating device utilizing ECR plasma 失效
标题翻译：采用ECR等离子体的半导体晶片处理装置
公开(公告)号：US4915979A
公开(公告)日：1990-04-10
申请号：US279016
申请日：1988-12-02
申请人： Tomoaki Ishida , Nobuo Fujiwara , Kyusaku Nishioka , Moriaki Akazawa , Teruo Shibano , Kenji Kawai
发明人： Tomoaki Ishida , Nobuo Fujiwara , Kyusaku Nishioka , Moriaki Akazawa , Teruo Shibano , Kenji Kawai
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32357
摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.
摘要翻译：公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。因此，提高了晶片上的处理的均匀性。

3. 发明授权

US4982138A Semiconductor wafer treating device utilizing a plasma 失效
标题翻译：利用等离子体的半导体晶片处理装置
公开(公告)号：US4982138A
公开(公告)日：1991-01-01
申请号：US277640
申请日：1988-11-29
申请人： Nobuo Fujiwara , Kenji Kawai , Moriaki Akazawa , Teruo Shibano , Tomoaki Ishida , Kyusaku Nishioka
发明人： Nobuo Fujiwara , Kenji Kawai , Moriaki Akazawa , Teruo Shibano , Tomoaki Ishida , Kyusaku Nishioka
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32678
摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.
摘要翻译：利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕该等离子体产生室在其中产生最小的B场。通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。因此，提高等离子体发生室中的等离子体的密度和稳定性。等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

4. 发明授权

US5304775A Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element 失效
标题翻译：用含有卤素和惰性元素的等离子体气体蚀刻具有高各向异性的晶片的方法
公开(公告)号：US5304775A
公开(公告)日：1994-04-19
申请号：US710988
申请日：1991-06-06
申请人： Nobuo Fujiwara , Kyusaku Nishioka , Teruo Shibano
发明人： Nobuo Fujiwara , Kyusaku Nishioka , Teruo Shibano
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , B23K9/00
CPC分类号： H01L21/31111 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.
摘要翻译：通过使用含有卤素的气体，使得有助于蚀刻工艺的卤素离子和轻质元素的离子质量小于卤素离子的离子并且不与半导体晶片反应来进行精细加工存在于由于电子回旋共振而产生的等离子体中。由于等离子体中的能量与质量成反比，所以可以抑制具有大质量的卤素离子的无序运动。因此，卤素离子可以垂直入射在半导体晶片的表面上。因此，可以进行显示高各向异性的蚀刻工艺。

5. 发明授权

US6015989A Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen 失效
标题翻译：具有由虹膜或钌形成的电容器电极和一定量的氧的半导体器件
公开(公告)号：US6015989A
公开(公告)日：2000-01-18
申请号：US770510
申请日：1996-12-20
申请人： Tsuyosi Horikawa , Tetsuro Makita , Takeharu Kuroiwa , Noboru Mikami , Teruo Shibano
发明人： Tsuyosi Horikawa , Tetsuro Makita , Takeharu Kuroiwa , Noboru Mikami , Teruo Shibano
IPC分类号： H01L21/28 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L28/60
摘要： A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.
摘要翻译：半导体器件包括具有主表面的半导体衬底; 形成在所述半导体衬底上并具有限定在其中的开口以在所述半导体衬底的主表面上开口的第一层间绝缘膜; 以Si为主要成分并嵌入开口的连接件; 通过连接构件与半导体衬底的主表面电连接的下电容器电极; 形成在下电容器电极上的电容器电介质膜; 形成在电容器电介质膜上的上电容器电极; 以及形成在电容器上电极上的第二层间绝缘膜。上述下部电容器电极由选自钌和铱的主要成分制成，并且含有0.001至0.1原子％的氧和/或0.1至5的至少一种杂质元素按原子计。杂质元素选自钛，铬，钨，钴，钯和钼。

6. 发明授权

US06239460B1 Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效
公开(公告)号：US06239460B1
公开(公告)日：2001-05-29
申请号：US08671632
申请日：1996-06-28
申请人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
发明人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
IPC分类号： H01L27108
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

7. 发明授权

US5882410A High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film 失效
公开(公告)号：US5882410A
公开(公告)日：1999-03-16
申请号：US115991
申请日：1998-07-15
申请人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
发明人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
IPC分类号： C23C16/40 , C23C16/448 , C23C16/52 , H01L21/02 , H01L21/314 , C23C16/00
CPC分类号： H01L28/56 , C23C16/409 , C23C16/4481 , C23C16/4485 , C23C16/52 , H01L21/02197 , H01L21/022 , H01L21/02271
摘要： There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

8. 发明授权

US06885726B2 Fluorescent X-ray analysis apparatus 失效
标题翻译：荧光X射线分析仪
公开(公告)号：US06885726B2
公开(公告)日：2005-04-26
申请号：US10419964
申请日：2003-04-22
申请人： Yasushi Uehara , Teruo Shibano
发明人： Yasushi Uehara , Teruo Shibano
IPC分类号： G01N23/223 , G21K1/06
CPC分类号： G01N23/223 , G01N2223/076 , G21K1/06
摘要： A fluorescent X-ray analysis apparatus includes: an X-ray generation source for radiating a beam of primary X-rays; spectroscopic elements circularly arranged so that their inner surfaces describe a circle centered on an optical axis of the beam of primary X-rays for monochromatizing the beam of primary X-rays and condensing the beam on a surface of an irradiation object; a spectroscopic element position adjuster for adjusting the positions of the spectroscopic elements; secondary X-rays detector for detecting secondary X-rays radiated from the surface of the irradiation object irradiated with the monochromatized beam of primary X-rays; a secondary X-ray detector position adjuster adjusting the position of the secondary X-ray detector; an irradiation object surface position detector detecting the position of the surface of the irradiation object; and a controller adjusting the positions of the spectroscopic elements through the spectroscopic element position adjuster to condense the monochromatized beam of primary X-rays on the surface of the irradiation object, on the basis of the position of the surface of the irradiation object detected by the irradiation object surface position detector.
摘要翻译：荧光X射线分析装置包括：用于照射初级X射线束的X射线产生源; 分光元件循环布置，使得它们的内表面描述以主X射线束的光轴为中心的圆，用于单色初级X射线束并将束聚焦在照射物体的表面上; 分光元件位置调节器，用于调节光谱元件的位置; 二次X射线检测器，用于检测从被照射的原始X射线的单色光束照射的照射物体的表面辐射的次级X射线; 辅助X射线检测器位置调节器，调节次X射线检测器的位置; 照射物体表面位置检测器，检测被照射物体的表面的位置; 以及控制器，其通过分光元件位置调整器调整分光元件的位置，以基于被照射物体的表面检测的照射物体的表面的位置，将照射物体的表面上的一次X射线的单色化光束聚集照射物体表面位置检测器。

9. 发明授权

US6165556A High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film 失效
公开(公告)号：US6165556A
公开(公告)日：2000-12-26
申请号：US435492
申请日：1999-11-08
申请人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
发明人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
IPC分类号： C23C16/40 , C23C16/44 , C23C16/448 , C23C16/52 , C23C16/56 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： H01L28/56 , C23C16/409 , C23C16/4481 , C23C16/4485 , C23C16/52 , C23C16/56 , H01L21/31691 , H01L28/55 , Y10S427/101
摘要： There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

10. 发明授权

US06420191B2 Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效
标题翻译：制造半导体器件的方法，其包括具有由铱或钌形成的下电极的电容器
公开(公告)号：US06420191B2
公开(公告)日：2002-07-16
申请号：US09768552
申请日：2001-01-25
申请人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
发明人： Takeharu Kuroiwa , Tsuyoshi Horikawa , Tetsuro Makita , Noboru Mikami , Teruo Shibano
IPC分类号： H01G706
CPC分类号： H01L28/60 , H01L27/10852 , H01L28/55
摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.
摘要翻译：诸如包括电容器的DRAM的半导体器件，其中电容器的下电极是金属电极，金属电极主要由钌或铱组成，并且通过没有氧化物层的材料直接连接到电容器电介质膜金属电极形成在金属电极的表面上。与使用铂形成电极的常规情况相比，由铱或钌制成的下电极可以容易地被处理，并且当形成电容器电介质膜时也不能被氧化，因此可以防止电容的减小。

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