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1. 发明授权

US4982138A Semiconductor wafer treating device utilizing a plasma 失效
标题翻译：利用等离子体的半导体晶片处理装置
公开(公告)号：US4982138A
公开(公告)日：1991-01-01
申请号：US277640
申请日：1988-11-29
申请人： Nobuo Fujiwara , Kenji Kawai , Moriaki Akazawa , Teruo Shibano , Tomoaki Ishida , Kyusaku Nishioka
发明人： Nobuo Fujiwara , Kenji Kawai , Moriaki Akazawa , Teruo Shibano , Tomoaki Ishida , Kyusaku Nishioka
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32678
摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.
摘要翻译：利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕该等离子体产生室在其中产生最小的B场。通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。因此，提高等离子体发生室中的等离子体的密度和稳定性。等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

2. 发明授权

US4915979A Semiconductor wafer treating device utilizing ECR plasma 失效
标题翻译：采用ECR等离子体的半导体晶片处理装置
公开(公告)号：US4915979A
公开(公告)日：1990-04-10
申请号：US279016
申请日：1988-12-02
申请人： Tomoaki Ishida , Nobuo Fujiwara , Kyusaku Nishioka , Moriaki Akazawa , Teruo Shibano , Kenji Kawai
发明人： Tomoaki Ishida , Nobuo Fujiwara , Kyusaku Nishioka , Moriaki Akazawa , Teruo Shibano , Kenji Kawai
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32357
摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.
摘要翻译：公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。因此，提高了晶片上的处理的均匀性。

3. 发明授权

US5474615A Method for cleaning semiconductor devices 失效
标题翻译：半导体器件清洗方法
公开(公告)号：US5474615A
公开(公告)日：1995-12-12
申请号：US993514
申请日：1992-12-17
申请人： Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa
发明人： Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa
IPC分类号： H01L21/302 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3065 , C03C15/00
CPC分类号： H01L21/02046 , H01L21/02057 , H01L21/02071 , H01L21/67028 , Y10S438/963
摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.
摘要翻译：公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。在其上形成图案或沟槽的被处理基板位于处理容器中。与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

4. 发明授权

US5306671A Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method 失效
标题翻译：半导体衬底表面的处理方法及包括这种处理方法的半导体器件的制造方法
公开(公告)号：US5306671A
公开(公告)日：1994-04-26
申请号：US718674
申请日：1991-06-21
申请人： Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa
发明人： Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa
IPC分类号： H01L21/302 , H01L21/28 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/00 , H01L21/02
CPC分类号： H01L21/3065 , H01L21/02046 , H01L21/02057 , H01L21/0206 , H01L21/02063 , H01L21/28167 , Y10S438/906 , Y10S438/974
摘要： A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.
摘要翻译：本发明的主要特征是清洁半导体衬底的表面，而不会在其表面上提供损伤层。通过使用含氟气体的等离子体蚀刻在硅衬底的表面上形成的自然氧化膜。通过使用含氟气体以除去在上述等离子体蚀刻步骤中形成的表面损伤层和碳氟化合物层，再次对半导体衬底的表面进行等离子体蚀刻。半导体衬底表面在低压下用紫外线照射，以便在后一等离子体蚀刻时解离和去除化学吸附到半导体衬底表面上的氟原子。

5. 发明授权

US4891095A Method and apparatus for plasma treatment 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US4891095A
公开(公告)日：1990-01-02
申请号：US325917
申请日：1989-03-20
申请人： Tomoaki Ishida , Kyusaku Nishioka
发明人： Tomoaki Ishida , Kyusaku Nishioka
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32678 , H05H1/46
摘要： A mirror field which faces a surface of a specimen to be treated and which has its field axis parallel to the specimen surface is formed in an atmosphere in a reactive gas, and a plasma of the reactive gas is then generated by introducing microwave energy into a region where the mirror field is formed, the thus-formed plasma being confined by the mirror field. The specimen is then treated by activated neutral particles which are produced by the plasma to the surface of the specimen. Preferably, an electric field is formed in the direction along the field axis of the mirror field in a region where the plasma is generated.
摘要翻译：在反应气体的气氛中形成面向待处理试样的表面并且其场轴平行于试样表面的反射场，然后通过将微波能量引入到反应气体中来产生等离子体形成镜面场的区域，这样形成的等离子体被镜面场限制。然后将样品通过由等离子体产生的活性中性颗粒处理到样品的表面。优选地，在产生等离子体的区域中沿着镜面场的场轴的方向形成电场。

6. 发明授权

US5038013A Plasma processing apparatus including an electromagnet with a bird cage core 失效
标题翻译：等离子体处理装置，包括具有鸟笼芯的电磁体
公开(公告)号：US5038013A
公开(公告)日：1991-08-06
申请号：US562669
申请日：1990-08-03
申请人： Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida
发明人： Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.
摘要翻译：等离子体蚀刻装置包括：腔室，用于保持腔室中待蚀刻的半导体衬底等样品的保持台，用于在腔室内产生等离子体的等离子体产生装置;以及磁场形成装置，形成垂直于放置在保持台上并平行于室的内壁的样品表面的磁场。

7. 发明授权

US5147465A Method of cleaning a surface 失效
标题翻译：清洁表面的方法
公开(公告)号：US5147465A
公开(公告)日：1992-09-15
申请号：US605427
申请日：1990-10-30
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.
摘要翻译：一种清洁表面的方法，包括通过激发氦气产生氦离子，电子和亚稳态氦，将所述亚稳态氦与氦离子和电子分离，并将待处理物质暴露于其外部物质的表面上从氦离子和电子分离的亚稳态氦从物质中除去异物。

8. 发明授权

US5318654A Apparatus for cleaning a substrate with metastable helium 失效
标题翻译：用亚稳态氦气清洗底物的装置
公开(公告)号：US5318654A
公开(公告)日：1994-06-07
申请号：US893832
申请日：1992-06-04
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.
摘要翻译：一种用于清洁表面的设备包括第一和第二反应容器，用于在第二反应容器中保持在其表面存在异物的待处理物质的保持装置，用于向第一反应中供应氦气的装置容器，用于通过在第一反应容器中激发氦气产生氦离子，电子和亚稳态氦的装置，以及用于分离在第一反应容器中产生的亚稳态氦并将亚稳态氦引入第二反应容器的装置。

9. 发明申请

US20060282055A1 Absorbing pad for male 审中-公开
标题翻译：吸收垫为男性
公开(公告)号：US20060282055A1
公开(公告)日：2006-12-14
申请号：US10551827
申请日：2004-03-29
申请人： Takeyuki Shiomi , Tomoaki Ishida
发明人： Takeyuki Shiomi , Tomoaki Ishida
IPC分类号： A61F13/15
CPC分类号： A61F13/471 , A61F13/4915
摘要： This invention provides a leakage-free absorbent pad for men. The absorbent pad for men of this invention includes a liquid permeable top sheet 1, a back sheet 2, an absorbent member 3 arranged between the both sheets, and a pair of liquid impermeable gather sheets facing each other on the top sheet 1, wherein a liquid permeable auxiliary sheet 10 is provided to extend from a side of one gather sheet 5 toward the other gather sheet 4 between the top sheet 1 and the gather sheets 4 and 5, and an opening 6 for inserting male genitals is formed by the auxiliary sheet and the other gather sheet 4.
摘要翻译：本发明提供了一种无泄漏的男性吸收垫。本发明的男士用吸收垫包括透液性顶片1，底片2，布置在两片之间的吸收体3和在顶片1上彼此面对的一对液体不可渗透的褶皱片，其中，透液性辅助片10设置成从顶片1和褶皱片4和5之间的一个褶皱片5的一侧延伸到另一个褶皱片4，并且用辅助片形成插入阳性生殖器的开口6 另一个收集表4。

10. 发明授权

US5246532A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5246532A
公开(公告)日：1993-09-21
申请号：US990797
申请日：1992-12-10
申请人： Tomoaki Ishida
发明人： Tomoaki Ishida
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32697 , Y10S156/915
摘要： In a plasma processing method and a plasma processing apparatus, a substrate is processed in a plasma with a surrounding focus ring levitated by the repulsion between a magnet mounted in the focus ring and an electromagnet. The height of the focus ring relative to the substrate support is adjusted to an optimal height by adjusting the current flowing to the electromagnet. Therefore, it is possible to achieve an optimal height of the focus ring for the etching of each layer in a laminated film to enhance the uniformity of laminated film etching and to achieve precise etching.
摘要翻译：在等离子体处理方法和等离子体处理装置中，在等离子体中处理基板，其中通过在安装在聚焦环的磁体和电磁体之间的排斥而悬浮的周围聚焦环。通过调节流向电磁体的电流将聚焦环相对于基底支架的高度调整到最佳高度。因此，可以实现层叠膜中各层的蚀刻的聚焦环的最佳高度，以提高层压膜蚀刻的均匀性并实现精确的蚀刻。

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