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1. 发明申请

US20070000287A1 Yarn feeding device of weft knitting machine 有权
标题翻译：纬编机喂纱装置
公开(公告)号：US20070000287A1
公开(公告)日：2007-01-04
申请号：US10576024
申请日：2004-10-15
申请人： Toshiaki Morita , Hirokazu Nishitani , Masanori Inumaki
发明人： Toshiaki Morita , Hirokazu Nishitani , Masanori Inumaki
IPC分类号： D04B7/04
CPC分类号： D04B7/34 , D04B1/28 , D04B15/48
摘要： A carriage which completes one course of knitting to the knitting end of a fabric is stopped. Knitting in a next course is performed when the carriage reverses its moving direction and re-starts its movement. Since the knitting yarn is not knitted to the fabric until a carrier brought by the carriage reaches a position of a knitting needle holding the stitch of the fabric at the knitting end, the knitting yarn existing in a feeding path between a yarn feeding mechanism and the carrier is excessively increased and a slack is generated. Since a distance between a yarn feeding port formed at a carrier's frontal end and the knitting needle at the fabric-knitting end is also reduced, the knitting yarn is further increased excessively. The further-excessively-increased knitting yarn is taken in by a yarn feeding means by reversing a servomotor, and further pulled in by a rewinding arm.
摘要翻译：停止向织物的编织端完成一个针织过程的托架。当滑架反转其移动方向并重新启动其移动时，执行下一个课程的编织。由于针织纱不是针织到织物上，直到由托架带到的托架到达针织端处的织物的针迹的针织针的位置时，存在于喂纱机构和喂纱机构之间的进给路径中的针织纱载体过度增加并产生松弛。由于形成在载体前端的喂纱口与织物编织端的织针之间的距离也减小，所以针织纱进一步增大。进一步过度增加的针织纱线由送纱装置通过反转伺服电动机而被再卷绕臂进一步拉入。

2. 发明授权

US07218988B2 Yarn feeding apparatus of weft knitting machine 有权
标题翻译：纬编机喂纱机
公开(公告)号：US07218988B2
公开(公告)日：2007-05-15
申请号：US10576024
申请日：2004-10-15
申请人： Toshiaki Morita , Hirokazu Nishitani , Masanori Inumaki
发明人： Toshiaki Morita , Hirokazu Nishitani , Masanori Inumaki
IPC分类号： D04B15/78
CPC分类号： D04B7/34 , D04B1/28 , D04B15/48
摘要： A carriage which completes one course of knitting to the knitting end of a fabric is stopped. Knitting in a next course is performed when the carriage reverses its moving direction and re-starts its movement. Since the knitting yarn is not knitted to the fabric until a carrier brought by the carriage reaches a position of a knitting needle holding the stitch of the fabric at the knitting end, the knitting yarn existing in a feeding path between a yarn feeding mechanism and the carrier is excessively increased and a slack is generated. Since a distance between a yarn feeding port formed at a carrier's frontal end and the knitting needle at the fabric-knitting end is also reduced, the knitting yarn is further increased excessively. The further-excessively-increased knitting yarn is taken in by a yarn feeding means by reversing a servomotor, and further pulled in by a rewinding arm.
摘要翻译：停止向织物的编织端完成一个针织过程的托架。当滑架反转其移动方向并重新启动其移动时，执行下一个课程的编织。由于针织纱线没有编织到织物上，直到由托架带到的托架到达编织端处的织物针迹的织针的位置时，存在于喂纱机构和喂纱机构之间的进给路径中的针织纱线载体过度增加并产生松弛。由于形成在载体前端的喂纱口与织物编织端的织针之间的距离也减小，所以针织纱进一步增大。进一步过度增加的针织纱线由送纱装置通过反转伺服电动机而被再卷绕臂进一步拉入。

3. 发明授权

US07055349B2 Yarn feeding device for flat knitting machine 失效
标题翻译：横机喂纱机
公开(公告)号：US07055349B2
公开(公告)日：2006-06-06
申请号：US10522172
申请日：2003-07-22
申请人： Toshiaki Morita , Hirokazu Nishitani
发明人： Toshiaki Morita , Hirokazu Nishitani
IPC分类号： D04B15/48
CPC分类号： D04B15/44 , D04B15/48
摘要： An object of the invention is to be provide a yarn feeding apparatus of a flat knitting machine capable of accurately predicting a required amount of a knitting yarn and knitting a fabric while supplying knitting yarn necessary for knitting. The knitting yarn is fed out based on an idea shown in a solid line in consideration of a yarn speed corresponding to the requirement for knitting yarn produced according to the movement of a yarn feeding member as shown by chain lines in FIG. 6(b). A knitting yarn is stored on a buffer rod at a start of knitting because the speed of a motor such as a servo motor for feeding a knitting yarn lags behind the yarn speed. A knitting yarn that runs short at the time of deceleration at an end of knitting is also fed out in advance.
摘要翻译：本发明的目的是提供一种横编机的喂纱装置，其能够准确地预测编织纱需要量并编织织物，同时提供编织所需的针织纱线。考虑到与图3中的点划线所示的喂纱构件的移动所生成的针织纱的要求相对应的纱线速度，基于实线所示的想法，针织纱被送出。 6（b）。针织纱在开始编织时存储在缓冲杆上，因为诸如用于喂入针织纱的伺服电动机之类的电动机的速度滞后于纱线速度。编织结束时的减速时间短的针织纱也预先送出。

4. 发明申请

US20060090520A1 YARN FEEDING DEVICE FOR FLAT KNITTING MACHINE 失效
标题翻译：用于平缝机的纱线送料装置
公开(公告)号：US20060090520A1
公开(公告)日：2006-05-04
申请号：US10522172
申请日：2003-07-22
申请人： Toshiaki Morita , Hirokazu Nishitani
发明人： Toshiaki Morita , Hirokazu Nishitani
IPC分类号： D04B15/48
CPC分类号： D04B15/44 , D04B15/48
摘要： An object of the invention is to be provide a yarn feeding apparatus of a flat knitting machine capable of accurately predicting a required amount of a knitting yarn and knitting a fabric while supplying knitting yarn necessary for knitting. The knitting yarn is fed out based on an idea shown in a solid line in consideration of a yarn speed corresponding to the requirement for knitting yarn produced according to the movement of a yarn feeding member as shown by chain lines in FIG. 6(b). A knitting yarn is stored on a buffer rod at a start of knitting because the speed of a motor such as a servo motor for feeding a knitting yarn lags behind the yarn speed. A knitting yarn that runs short at the time of deceleration at an end of knitting is also fed out in advance.
摘要翻译：本发明的目的是提供一种横编机的喂纱装置，其能够准确地预测编织纱需要量并编织织物，同时提供编织所需的针织纱线。考虑到与图3中的点划线所示的喂纱构件的移动所生成的针织纱的要求相对应的纱线速度，基于实线所示的想法，针织纱被送出。 6（b）。针织纱在开始编织时存储在缓冲杆上，因为诸如用于喂入针织纱的伺服电动机之类的电动机的速度滞后于纱线速度。编织结束时的减速时间短的针织纱也预先送出。

5. 发明授权

US5369966A Method and apparatus for yarn processing position control of flat knitting machine 失效
标题翻译：横机纱线加工位置控制方法及装置
公开(公告)号：US5369966A
公开(公告)日：1994-12-06
申请号：US76624
申请日：1993-06-15
申请人： Toshiaki Morita , Hirokazu Nishitani
发明人： Toshiaki Morita , Hirokazu Nishitani
IPC分类号： D04B15/56 , D04B7/26 , D04B15/16 , D04B15/58 , D04B15/60
CPC分类号： D04B7/26 , D04B1/126
摘要： In order to process yarn preliminarily, and to change over yarn precisely at a desired knitting position, the yarn fed to a flat knitting machine is processed by a yarn processing device. To change over the yarn at a changeover position of knitted fabric, it is necessary to actuate the yarn processing device preliminarily at an actuating position C. A controller calculates the actuating position from a set value in a setting circuit and pattern information from a memory. When an encoder detects that a position of feeding the yarn to a knitting needle has reached the actuating position, the yarn processing device is actuated. The length of the yarn from a yarn processing position to the actuating position is nearly equal to the sum of a knitting loop length from the actuating position to the changeover position.
摘要翻译：为了预先处理纱线，并且在期望的编织位置精确地切换纱线，通过纱线处理装置对供给到横机的纱线进行加工。为了在针织物的切换位置切换纱线，需要预先在致动位置C致动纱线处理装置。控制器根据设定电路中的设定值和来自存储器的图案信息计算起动位置。当编码器检测到纱线馈送到织针的位置已经到达致动位置时，纱线处理装置被致动。从纱线处理位置到致动位置的纱线长度几乎等于从致动位置到切换位置的编织线圈长度的总和。

6. 发明授权

US08635710B2 Scanning probe microscope and method of observing sample using the same 有权
标题翻译：扫描探针显微镜及使用其的观察样品的方法
公开(公告)号：US08635710B2
公开(公告)日：2014-01-21
申请号：US13446279
申请日：2012-04-13
申请人： Toshihiko Nakata , Masahiro Watanabe , Takashi Inoue , Kishio Hidaka , Makoto Okai , Toshiaki Morita , Motoyuki Hirooka
发明人： Toshihiko Nakata , Masahiro Watanabe , Takashi Inoue , Kishio Hidaka , Makoto Okai , Toshiaki Morita , Motoyuki Hirooka
IPC分类号： G01B11/14 , G01Q60/06
CPC分类号： G01Q60/06 , G01N21/648 , G01Q60/22 , G01Q70/12
摘要： Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force.
摘要翻译：以纳米级分辨率和高重现性测量样品表面的光学信息和地形信息，而不损害探针和样品，通过将纳米级圆柱结构与纳米级微结构组合以形成等离子体激元附近具有纳米级光学分辨率并且以低接触力重复将样品上的每个测量点的探针接近/退回。

7. 发明授权

US08592996B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08592996B2
公开(公告)日：2013-11-26
申请号：US12825783
申请日：2010-06-29
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H01L23/48
CPC分类号： H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/05624 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/325 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48624 , H01L2224/73265 , H01L2224/8384 , H01L2224/92 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/10272 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/01026
摘要： A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element.
摘要翻译：一种半导体器件，其中安装在衬底上的由Si或Si基团材料制成的半导体元件，所述半导体元件安装在所述衬底上，并且所述半导体元件经由形成在所述半导体元件上的氧化物膜结合到银接合材料。使用包含平均粒径为1nm〜50nm的氧化银粒子和有机还原剂的接合材料在空气中接合，这对半导体元件上的氧化物具有高的接合强度。

8. 发明授权

US08513534B2 Semiconductor device and bonding material 失效
公开(公告)号：US08513534B2
公开(公告)日：2013-08-20
申请号：US12379644
申请日：2009-02-26
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H05K1/03
CPC分类号： H01L23/488 , C04B37/026 , C04B2237/06 , C04B2237/124 , C04B2237/125 , C04B2237/368 , H01L23/047 , H01L23/24 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/73 , H01L24/83 , H01L24/84 , H01L25/072 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/29347 , H01L2224/32225 , H01L2224/325 , H01L2224/371 , H01L2224/37147 , H01L2224/37599 , H01L2224/40091 , H01L2224/40225 , H01L2224/45124 , H01L2224/48227 , H01L2224/49113 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83205 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H05K1/09 , H05K3/321 , H05K2203/1131 , H01L2924/00 , H01L2924/00012
摘要： The present invention is directed to enhancing the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. In the semiconductor device, a semiconductor element and an Al electrode are connected to each other with a bonding layer made of Ag or Cu interposed therebetween, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including a metal oxide particle with an average diameter of 1 nm to 50 μm, an acetic acid- or formic acid-based compound, and a reducing agent made of an organic material.

9. 发明申请

US20120217556A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120217556A1
公开(公告)日：2012-08-30
申请号：US13459839
申请日：2012-04-30
申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号： H01L29/78
CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要： A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.
摘要翻译：一种具有半导体芯片的半导体器件，具有第一主表面和第二相对的主表面，并且包括形成在第一主表面上的源极和栅电极的MOSFET，以及形成在第二主表面上的漏电极，第一和第二导电作为源电极和栅电极的引线端子的部件分别设置在第一主表面上，第一和第二导电部件中的每一个在平面图中与芯片重叠，密封体密封芯片和部件的第一和第二导电构件，使得第一导电构件的一部分从密封体的第一侧表面向外突出，并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出在平面图中。

10. 发明授权

US08008772B2 Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法，复合金属体及其制造方法
公开(公告)号：US08008772B2
公开(公告)日：2011-08-30
申请号：US12019789
申请日：2008-01-25
申请人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
发明人： Toshiaki Morita , Yusuke Yasuda , Eiichi Ide
IPC分类号： H01L23/48
CPC分类号： H01L24/33 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/29347 , H01L2224/32225 , H01L2224/325 , H01L2224/371 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
摘要翻译：具有通过包含Cu的接合层连接半导体元件和Cu或Ni电极的结构的半导体器件，并且Cu键合层和Cu或Ni电极彼此扩散接合。通过使用含有平均粒径为1nm〜50μm的Cu氧化物的颗粒的接合材料和包含有机材料的还原剂，通过在还原气氛中导电接合而形成接合层，从而对Ni或铜电极。

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