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1. 发明授权

US07745247B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US07745247B2
公开(公告)日：2010-06-29
申请号：US12250282
申请日：2008-10-13
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

2. 发明申请

US20090104729A1 SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20090104729A1
公开(公告)日：2009-04-23
申请号：US12250282
申请日：2008-10-13
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L21/02
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

3. 发明授权

US07453109B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US07453109B2
公开(公告)日：2008-11-18
申请号：US11219007
申请日：2005-09-01
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/062
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

4. 发明申请

US20120288979A1 SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM 审中-公开
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20120288979A1
公开(公告)日：2012-11-15
申请号：US13555355
申请日：2012-07-23
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

5. 发明申请

US20060049476A1 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20060049476A1
公开(公告)日：2006-03-09
申请号：US11219007
申请日：2005-09-01
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/0232 , H01L31/00
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

6. 发明申请

US20100221864A1 SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20100221864A1
公开(公告)日：2010-09-02
申请号：US12780811
申请日：2010-05-14
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

7. 发明授权

US08252614B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器及成像系统
公开(公告)号：US08252614B2
公开(公告)日：2012-08-28
申请号：US12780811
申请日：2010-05-14
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L21/00 , H01L21/4763
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

8. 发明申请

US20070205439A1 IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM 审中-公开
标题翻译：图像拾取装置和图像拾取系统
公开(公告)号：US20070205439A1
公开(公告)日：2007-09-06
申请号：US11680742
申请日：2007-03-01
申请人： Akira Okita , Hiroki Hiyama , Ryuichi Mishima , Asako Ura
发明人： Akira Okita , Hiroki Hiyama , Ryuichi Mishima , Asako Ura
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14645
摘要： An image pickup apparatus of the present invention includes a plurality of photoelectric conversion elements disposed on a semiconductor substrate, a multi-layer wiring structure including a plurality of interlayer insulation films disposed above the semiconductor substrate, and a passiation layer disposed above the multi-layer wiring structure. A first insulation layer is disposed below the under surface of the passiation layer; a second insulation layer is disposed above the top surface of the passiation layer; and the refractive indices of the passiation layer and the first insulation layer differ from each other, and the refractive indices of the passiation layer and the second insulation layer differ from each other. Moreover, planarization processing is performed to at least one layer of the interlayer insulation films and the first insulation layer. Furthermore, a first anti-reflection film is disposed between the passiation layer and the first insulation layer, and a second anti-reflection film is disposed between the passiation layer and the second insulation layer.
摘要翻译：本发明的图像拾取装置包括设置在半导体衬底上的多个光电转换元件，包括设置在半导体衬底之上的多个层间绝缘膜的多层布线结构，以及设置在多层上方的钝化层接线结构。第一绝缘层设置在被钝化层的下表面下方; 第二绝缘层设置在被钝化层的顶表面之上; 并且被照射层和第一绝缘层的折射率彼此不同，并且被照射层和第二绝缘层的折射率彼此不同。此外，对层间绝缘膜和第一绝缘层的至少一层进行平坦化处理。此外，第一防反射膜设置在被照射层和第一绝缘层之间，第二防反射膜设置在被照射层和第二绝缘层之间。

9. 发明授权

US08304278B2 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus 有权
标题翻译：光电转换装置和使用光电转换装置的摄像系统
公开(公告)号：US08304278B2
公开(公告)日：2012-11-06
申请号：US12904269
申请日：2010-10-14
申请人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
发明人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译：光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及电连接到第二插头的布线形成双镶嵌结构的一部分。通过这样的结构，可以提高光到光电转换元件的入射效率。

10. 发明授权

US07977760B2 Photoelectric conversion device, its manufacturing method, and image pickup device 有权
标题翻译：光电转换装置及其制造方法以及摄像装置
公开(公告)号：US07977760B2
公开(公告)日：2011-07-12
申请号：US12435756
申请日：2009-05-05
申请人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
发明人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
IPC分类号： H01L31/101
CPC分类号： H01L27/14689 , H01L27/14603
摘要： A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle θ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译：提供了一种其中不产生平面沟道的光电转换装置的制造方法。光电转换装置在硅基板的一个主平面上形成硅基板和光电转换元件，其形成偏角度; 其中至少两个平面垂直于参考（10）平面的平面在3.5°和11“之间;而且用于形成构成光电转换元件的半导体区域的离子注入方向形成角度; 在0°<＆phgr;＆lt; nlE; 45°的范围内垂直于主平面的方向，并且离子注入方向相对于主平面的突出方向进一步与两个平面方向成一角度α 0°<α<90°。

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