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1. 发明申请

US20080203450A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权
标题翻译：使用光电转换装置的光电转换装置和图像拾取系统
公开(公告)号：US20080203450A1
公开(公告)日：2008-08-28
申请号：US12026623
申请日：2008-02-06
申请人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
发明人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译：光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及电连接到第二插头的布线形成双镶嵌结构的一部分。通过这样的结构，可以提高光到光电转换元件的入射效率。

2. 发明授权

US08304278B2 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus 有权
标题翻译：光电转换装置和使用光电转换装置的摄像系统
公开(公告)号：US08304278B2
公开(公告)日：2012-11-06
申请号：US12904269
申请日：2010-10-14
申请人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
发明人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译：光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及电连接到第二插头的布线形成双镶嵌结构的一部分。通过这样的结构，可以提高光到光电转换元件的入射效率。

3. 发明授权

US07838918B2 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus 有权
标题翻译：光电转换装置和使用光电转换装置的摄像系统
公开(公告)号：US07838918B2
公开(公告)日：2010-11-23
申请号：US12026623
申请日：2008-02-06
申请人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
发明人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译：光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及电连接到第二插头的布线形成双镶嵌结构的一部分。通过这样的结构，可以提高光到光电转换元件的入射效率。

4. 发明申请

US20110027934A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权
标题翻译：使用光电转换装置的光电转换装置和图像拾取系统
公开(公告)号：US20110027934A1
公开(公告)日：2011-02-03
申请号：US12904269
申请日：2010-10-14
申请人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
发明人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译：光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及电连接到第二插头的布线形成双镶嵌结构的一部分。通过这样的结构，可以提高光到光电转换元件的入射效率。

5. 发明授权

US08546902B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08546902B2
公开(公告)日：2013-10-01
申请号：US12779471
申请日：2010-05-13
申请人： Seiichi Tamura , Hiroshi Yuzurihara , Takeshi Ichikawa , Ryuichi Mishima
发明人： Seiichi Tamura , Hiroshi Yuzurihara , Takeshi Ichikawa , Ryuichi Mishima
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L27/14609 , H04N5/335
摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
摘要翻译：本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素，相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

6. 发明申请

US20060141655A1 Photoelectric conversion device, its manufacturing method, and image pickup device 失效
标题翻译：光电转换装置及其制造方法以及摄像装置
公开(公告)号：US20060141655A1
公开(公告)日：2006-06-29
申请号：US11318930
申请日：2005-12-28
申请人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
发明人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14603
摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译：本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中主平面具有偏角，每个角度θ与至少两个垂直于基准的平面（100 ）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在垂直于主平面的方向上在0°< phi <= 45°，此外，离子注入方向的投影方向与主平面的方向在0°<α<90°的范围内与两个平面方向形成每个角度α。

7. 发明授权

US07977760B2 Photoelectric conversion device, its manufacturing method, and image pickup device 有权
标题翻译：光电转换装置及其制造方法以及摄像装置
公开(公告)号：US07977760B2
公开(公告)日：2011-07-12
申请号：US12435756
申请日：2009-05-05
申请人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
发明人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
IPC分类号： H01L31/101
CPC分类号： H01L27/14689 , H01L27/14603
摘要： A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle θ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译：提供了一种其中不产生平面沟道的光电转换装置的制造方法。光电转换装置在硅基板的一个主平面上形成硅基板和光电转换元件，其形成偏角度; 其中至少两个平面垂直于参考（10）平面的平面在3.5°和11“之间;而且用于形成构成光电转换元件的半导体区域的离子注入方向形成角度; 在0°<＆phgr;＆lt; nlE; 45°的范围内垂直于主平面的方向，并且离子注入方向相对于主平面的突出方向进一步与两个平面方向成一角度α 0°<α<90°。

8. 发明申请

US20050127415A1 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system 有权
标题翻译：光电转换装置，光电转换装置的制造方法以及摄像系统
公开(公告)号：US20050127415A1
公开(公告)日：2005-06-16
申请号：US11003444
申请日：2004-12-06
申请人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
发明人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
IPC分类号： H01L27/146 , H01L27/148 , H01L31/10 , H01L31/113 , H01L21/00
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2
摘要翻译：一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域底物。对应于第一杂质区域中的杂质浓度的峰值的浓度C 1，与第二杂质区域中的杂质浓度的峰值对应的浓度C 2和与第二杂质区域中的杂质浓度的峰值相对应的浓度C 3 第三杂质区满足以下关系：<？in-line-formula description =“In-line formula”end =“lead”？> C 2

9. 发明授权

US07541211B2 Photoelectric conversion device, its manufacturing method, and image pickup device 失效
标题翻译：光电转换装置及其制造方法以及摄像装置
公开(公告)号：US07541211B2
公开(公告)日：2009-06-02
申请号：US11318930
申请日：2005-12-28
申请人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
发明人： Seiichi Tamura , Hiroshi Yuzurihara , Shigeru Nishimura , Ryuichi Mishima , Yasushi Nakata
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14603
摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译：本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中所述主平面具有偏离角度，每个角度θ与垂直于基准的至少两个平面（1 0°）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在0°的范围内与主平面垂直的方向形成角度 °

10. 发明授权

US08309997B2 Photoelectric conversion device, method for manufacturing the same and image pickup system 有权
标题翻译：光电转换装置及其制造方法以及摄像系统
公开(公告)号：US08309997B2
公开(公告)日：2012-11-13
申请号：US13173007
申请日：2011-06-30
申请人： Hiroshi Yuzurihara , Seiichi Tamura , Ryuichi Mishima
发明人： Hiroshi Yuzurihara , Seiichi Tamura , Ryuichi Mishima
IPC分类号： H01L31/02
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14643 , H01L31/035281 , H01L31/03529
摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).
摘要翻译：本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

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