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1. 发明授权

US5712046A Titanium ring for an electrodeposition drum and a method for its manufacture 失效
标题翻译：用于电沉积鼓的钛环及其制造方法
公开(公告)号：US5712046A
公开(公告)日：1998-01-27
申请号：US675482
申请日：1996-07-03
申请人： Toru Kamidaira , Seishi Ishiyama , Noriyasu Ikeda , Daiharu Doi
发明人： Toru Kamidaira , Seishi Ishiyama , Noriyasu Ikeda , Daiharu Doi
IPC分类号： C25D1/04 , C25D7/06 , C21D9/08
CPC分类号： C25D7/0657 , C25D1/04 , Y10T428/12292
摘要： A titanium ring for an electrodeposition drum has an attractive, uniform surface without patterns comprising bright and dark spots which are formed during surface polishing. The ring has a thickness of 4-30 mm and a surface hardness when it has been polished to an average surface roughness Ra of at most 0.3 .mu.m such that the difference between the maximum and minimum Vickers hardness measured with a load of at most 1 kg at 10 or more points disposed at a pitch of 0.3-1 mm along a line in an arbitrary direction along the surface is at most 10. The ring can be manufactured by welding of a rolled plate or by ring rolling of a tube. When the temperature of the material forming the ring is heated to at least its .beta. transformation point, cooling past the .beta. transformation point is carried out at a rate of at least 1000.degree. C. per hour. Subsequent working or heat treatment is carried out below the .beta. transformation point.
摘要翻译：用于电沉积鼓的钛环具有吸引力的均匀表面，没有包含在表面抛光期间形成的亮点和暗点的图案。该环的厚度为4-30mm，当其被抛光至平均表面粗糙度Ra至多0.3μm时的表面硬度，使得最大和最小维氏硬度之间的差异以至多1 kg，在沿表面任意方向的线以0.3-1mm的间距设置的10个以上的点最多为10.该环可以通过轧制板的焊接或通过管的滚压来制造。当形成环的材料的温度被加热到至少其β相变点时，经过β相变点的冷却是以至少1000℃/小时的速率进行的。随后的工作或热处理在β变换点以下进行。

2. 发明授权

US4653684A Welding material for austenite stainless steel having high Si content and method of application 失效
标题翻译：具有高Si含量的奥氏体不锈钢焊接材料和应用方法
公开(公告)号：US4653684A
公开(公告)日：1987-03-31
申请号：US650763
申请日：1984-09-12
申请人： Kiichi Saito , Masahiro Aoki , Noriyasu Ikeda , Masayoshi Miki , Masaaki Nagayama
发明人： Kiichi Saito , Masahiro Aoki , Noriyasu Ikeda , Masayoshi Miki , Masaaki Nagayama
IPC分类号： B23K35/30 , C22C38/34 , B23K35/22 , C22C38/40
CPC分类号： B23K35/3086
摘要： This invention relates to a welding material for welding a high-Si austenite stainless steel, capable of ensuring a high corrosion resistance of the weld metal in hot nitric acid of high concentration, while maintaining a toughness of the weld metal not smaller than 2 Kg-m/cm.sup.2, and the method of application therefor. The welding material has a composition containing not greater than 0.015% of C, 5 to 7% of Si, not greater than 2% of Mn, 15 to 20% of Cr, 10 to 22% of Ni, not greater than 0.02% of N, not greater than 0.45% of one or both of Nb and Ta, and the balance substantially Fe and inevitable impurities the sum of C and N contents is selected to be not greater than 0.03% and the sum of Nb and Ta contents is selected to be not smaller than 15.times.(C+N)%. The Ni-balance value given by the following formula ranges between -4 and -2.Ni balance value=% Ni+30(%C+%N)+0.5(%Mn)-1.1(%Cr+1.5.times.%Si)+8.2
摘要翻译：本发明涉及一种用于焊接高Si奥氏体不锈钢的焊接材料，其能够确保焊接金属在高浓度热硝酸中的高耐蚀性，同时保持焊接金属的韧性不小于2Kg- m / cm 2及其应用方法。该焊接材料的组成为：C：不大于0.015％，Si：5〜7％，Mn：2％以下，Cr：15〜20％，Ni：10〜22％，Ni： N，不大于Nb和Ta中的一种或两种的0.45％，余量基本上为Fe和不可避免的杂质，C和N含量的总和被选择为不大于0.03％，并且选择Nb和Ta的总和不小于15x（C + N）％。由以下公式给出的Ni平衡值范围介于-4和-2之间。 Ni平衡值=％Ni + 30（％C +％N）+0.5（％Mn）-1.1（％Cr + 1.5x％Si）+8.2

3. 发明授权

US4585479A Welding material of ferrite-austenite two-phase stainless steel and method of application 失效
标题翻译：铁素体 - 奥氏体两相不锈钢焊接材料及其应用
公开(公告)号：US4585479A
公开(公告)日：1986-04-29
申请号：US580667
申请日：1984-02-16
申请人： Masahiro Aoki , Kiichi Saito , Takeshi Yoshida , Noriyasu Ikeda , Masanori Takahashi , Masao Okubo , Masaaki Nagayama
发明人： Masahiro Aoki , Kiichi Saito , Takeshi Yoshida , Noriyasu Ikeda , Masanori Takahashi , Masao Okubo , Masaaki Nagayama
IPC分类号： B23K35/12 , B23K35/30 , C22C38/40
CPC分类号： B23K35/3086
摘要： This invention relates to a welding material of ferrite-austenite two-phase stainless steel capable of producing a weld metal having a high resistance to corrosion, particularly in an environment containing nitric acid, and the method of application therefor. The welding material consists essentially of not more than 0.03% of C, not more than 2.0% of Si, not more than 2.0% of Mn, 25 to 30% of Cr, 7 to 12% of Ni, not more than 0.35% of N, and the balance Fe and inevitable impurities. The Ni balance value given by the following formula ranges between -11.7 and -6.7:Ni balance value=Ni%+0.5.times.Mn%+30.times.(C+N)%-1.1 (Cr%+1.5.times.Si%)+8.2.
摘要翻译：本发明涉及能够生产具有高抗腐蚀性的焊接金属的铁素体 - 奥氏体两相不锈钢的焊接材料，特别是在含有硝酸的环境中，以及其应用方法。焊接材料基本上由不超过0.03％的C，不超过2.0％的Si，不超过2.0％的Mn，25至30％的Cr，7至12％的Ni，不超过0.35％的 N，余量为Fe和不可避免的杂质。由以下公式给出的Ni平衡值在-11.7和-6之间。

4. 发明授权

US08604522B2 Field effect type semiconductor device and method for manufacturing the same 有权
标题翻译：场效应型半导体器件及其制造方法
公开(公告)号：US08604522B2
公开(公告)日：2013-12-10
申请号：US13007904
申请日：2011-01-17
申请人： Masataka Takebuchi , Kazuhiro Utsunomiya , Noriyasu Ikeda
发明人： Masataka Takebuchi , Kazuhiro Utsunomiya , Noriyasu Ikeda
IPC分类号： H01L29/00
CPC分类号： H01L21/823814 , H01L21/2652 , H01L21/26586 , H01L21/823892 , H01L29/105 , H01L29/6659
摘要： In one embodiment, a semiconductor device includes a well region of a second conductivity type, a control electrode, a first main electrode and a second main electrode. The well region has a source region and a drain region of a first conductivity type selectively formed in a surface of the well region. The control electrode is configured to control a current path between the source region connected to the first main electrode and the drain region connected to the second main electrode. With respect to a reference defined as a position of the well region at an identical depth to a portion of the source region or the drain region with maximum curvature, a peak of impurity concentration distribution of the second conductivity type is in a range of 0.15 micrometers on a side of the surface of the well region and on a side opposite to the surface.
摘要翻译：在一个实施例中，半导体器件包括第二导电类型的阱区，控制电极，第一主电极和第二主电极。阱区具有选择性地形成在阱区的表面中的第一导电类型的源极区域和漏极区域。控制电极被配置为控制连接到第一主电极的源极区域和与第二主电极连接的漏极区域之间的电流路径。对于定义为与具有最大曲率的源极区域或漏极区域的一部分相同深度处的阱区域的位置的参考，第二导电类型的杂质浓度分布的峰值在0.15微米的范围内在井区域的表面的一侧和与表面相对的一侧上。

5. 发明申请

US20110175173A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110175173A1
公开(公告)日：2011-07-21
申请号：US13007904
申请日：2011-01-17
申请人： MASATAKA TAKEBUCHI , Kazuhiro Utsunomiya , Noriyasu Ikeda
发明人： MASATAKA TAKEBUCHI , Kazuhiro Utsunomiya , Noriyasu Ikeda
IPC分类号： H01L27/092 , H01L21/336
CPC分类号： H01L21/823814 , H01L21/2652 , H01L21/26586 , H01L21/823892 , H01L29/105 , H01L29/6659
摘要： In one embodiment, a semiconductor device includes a well region of a second conductivity type, a control electrode, a first main electrode and a second main electrode. The well region has a source region and a drain region of a first conductivity type selectively formed in a surface of the well region. The control electrode is configured to control a current path between the source region connected to the first main electrode and the drain region connected to the second main electrode. With respect to a reference defined as a position of the well region at an identical depth to a portion of the source region or the drain region with maximum curvature, a peak of impurity concentration distribution of the second conductivity type is in a range of 0.15 micrometers on a side of the surface of the well region and on a side opposite to the surface.
摘要翻译：在一个实施例中，半导体器件包括第二导电类型的阱区，控制电极，第一主电极和第二主电极。阱区具有选择性地形成在阱区的表面中的第一导电类型的源极区域和漏极区域。控制电极被配置为控制连接到第一主电极的源极区域和与第二主电极连接的漏极区域之间的电流路径。对于定义为与具有最大曲率的源极区域或漏极区域的一部分相同深度处的阱区域的位置的参考，第二导电类型的杂质浓度分布的峰值在0.15微米的范围内在井区域的表面的一侧和与表面相对的一侧上。

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