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1. 发明授权

US4585479A Welding material of ferrite-austenite two-phase stainless steel and method of application 失效
标题翻译：铁素体 - 奥氏体两相不锈钢焊接材料及其应用
公开(公告)号：US4585479A
公开(公告)日：1986-04-29
申请号：US580667
申请日：1984-02-16
申请人： Masahiro Aoki , Kiichi Saito , Takeshi Yoshida , Noriyasu Ikeda , Masanori Takahashi , Masao Okubo , Masaaki Nagayama
发明人： Masahiro Aoki , Kiichi Saito , Takeshi Yoshida , Noriyasu Ikeda , Masanori Takahashi , Masao Okubo , Masaaki Nagayama
IPC分类号： B23K35/12 , B23K35/30 , C22C38/40
CPC分类号： B23K35/3086
摘要： This invention relates to a welding material of ferrite-austenite two-phase stainless steel capable of producing a weld metal having a high resistance to corrosion, particularly in an environment containing nitric acid, and the method of application therefor. The welding material consists essentially of not more than 0.03% of C, not more than 2.0% of Si, not more than 2.0% of Mn, 25 to 30% of Cr, 7 to 12% of Ni, not more than 0.35% of N, and the balance Fe and inevitable impurities. The Ni balance value given by the following formula ranges between -11.7 and -6.7:Ni balance value=Ni%+0.5.times.Mn%+30.times.(C+N)%-1.1 (Cr%+1.5.times.Si%)+8.2.
摘要翻译：本发明涉及能够生产具有高抗腐蚀性的焊接金属的铁素体 - 奥氏体两相不锈钢的焊接材料，特别是在含有硝酸的环境中，以及其应用方法。焊接材料基本上由不超过0.03％的C，不超过2.0％的Si，不超过2.0％的Mn，25至30％的Cr，7至12％的Ni，不超过0.35％的 N，余量为Fe和不可避免的杂质。由以下公式给出的Ni平衡值在-11.7和-6之间。

2. 发明授权

US4659397A Manufacturing process for plate or forging of ferrite-austenite two-phase stainless steel 失效
标题翻译：铁素体 - 奥氏体两相不锈钢板或锻造的制造工艺
公开(公告)号：US4659397A
公开(公告)日：1987-04-21
申请号：US646896
申请日：1984-08-31
申请人： Mineo Kobayashi , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masaaki Nagayama
发明人： Mineo Kobayashi , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masaaki Nagayama
IPC分类号： C22C38/00 , C21D8/00 , C21D9/46 , C22C38/40 , C22C38/54 , C21D7/13
CPC分类号： C21D8/005 , C22C38/40
摘要： This invention relates to a manufacturing process for plate or forging (bar, stamp work or the like) of ferrite-austenite two-phase stainless steel, containing C at 0.03% or below, Si at 2.0% or below, Mn at 2.0% or below, Cr at 25 to 35%, Ni at 6 to 15%, N at 0.35% or below, and Fe and inevitable impurity for the remainder with or without adding B at 0.001 to 0.030% with the following nickel balance value specified at -3 to -9 and comprising an average crystal grain size at 0.015 mm or below from heating an ingot of the above mentioned ferrite-austenite two-phase stainless steel at 1,200.degree. C. or below and keeping a forging ratio by hot working at 5 or over.Ni balance value=Ni %+0.5 Mn %+30.times.(C+N) %-1.1(Cr %+1.5 Si %)+8.2
摘要翻译：本发明涉及含有0.03％以下的C，2.0％以下的Si，2.0％以下的Mn的铁素体 - 奥氏体相两相不锈钢的板或锻造（钢筋，冲压加工等）的制造方法， 25％〜35％的Cr，6〜15％的Ni，0.35％以下的N，Fe和不可避免的杂质，其余有或没有添加B为0.001〜0.030％，以下的镍平衡值规定为：在上述铁素体 - 奥氏体相两相不锈钢锭的1200℃或更低温度下加热锭子的平均晶粒尺寸为0.015mm或更小，并且通过热加工保持锻压比为5或过度。 Ni平衡值= Ni％+ 0.5 Mn％+ 30x（C + N）％-1.1（Cr％+ 1.5Si％）+ 8.2

3. 发明授权

US4279648A High silicon chromium nickel steel for strong nitric acid 失效
标题翻译：高硅铬镍钢用于强硝酸
公开(公告)号：US4279648A
公开(公告)日：1981-07-21
申请号：US103922
申请日：1979-12-17
申请人： Naoya Ito , Kiichi Saito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
发明人： Naoya Ito , Kiichi Saito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
IPC分类号： C22C38/00 , B23K35/30 , C22C38/40 , C22C38/48 , C22C38/50 , C22C38/58 , F16J3/04 , C22C38/02
CPC分类号： C22C38/48 , C22C38/40 , C22C38/50 , C22C38/58
摘要： A high-silicon-nickel-chromium steel resistant to concentrated nitric acid with a good workability and a good weldability, comprisingcarbon in an amount of not more than 0.03% (C.ltoreq.0.03%),silicon in an amount of from more than 5% to not more than 7% (5%
摘要翻译：耐高浓度硝酸的高硅镍铬钢，具有良好的可加工性和良好的可焊性，其中碳含量不超过0.03％（C≤0.03％），硅量较多 5％〜7％以下（5％

4. 发明授权

US4381941A Method for improving surface defect of specific steel resistant to concentrated nitric acid 失效
标题翻译：改善耐硝酸浓度的钢的表面缺陷的方法
公开(公告)号：US4381941A
公开(公告)日：1983-05-03
申请号：US246859
申请日：1981-03-23
申请人： Naoya Ito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
发明人： Naoya Ito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
IPC分类号： C21C7/04 , C21C7/00 , C22C38/48 , C22C38/50 , C22C38/58 , C22C33/00
CPC分类号： C22C38/50 , C21C7/0006 , C22C38/48 , C22C38/58
摘要： A method for improving surface defect of specific steel resistant to concentrated nitric acid, wherein the specific steel in a molten state, either a stainless steel comprising C.ltoreq.0.1 wt %, 2.5.ltoreq.Si.ltoreq.5 wt %, Mn.ltoreq.2 wt %,15.ltoreq.Cr.ltoreq.20 wt %, 10.ltoreq.Ni.ltoreq.22 wt %,C.times.10.ltoreq. at least one of Nb, Ta and Zr.ltoreq.2.5 wt %,the balance being iron and inevitable impurities,or a high-silicon-nickel-chromium steel comprisingC.ltoreq.0.03 wt %, 5.ltoreq.Si.ltoreq.7 wt %, Mn.ltoreq.10 wt %,7.ltoreq.Cr.ltoreq.16 wt %, 10.ltoreq.Ni.ltoreq.19 wt %,C.times.4.ltoreq. at least one of Nb, Ta and Zr.ltoreq.2 wt %,the balance being iron and inevitable impurities,is admixed with titanium (0.05.ltoreq.Ti.ltoreq.0.2 wt %) when producing said steel.
摘要翻译：一种改善对浓硝酸耐腐蚀的特种钢的表面缺陷的方法，其中熔融状态的特定钢，包括C≤0.1重量％，2.5≤Si≤5重量％的不锈钢，Mn Nb，Ta和Zr中的至少一种2.5重量％，25重量％，15重量％，20重量％，10重量％，余量为铁和不可避免的杂质，或包含C <0.03重量％，5≤Si≤7重量％，Mn <10重量％，7重量％ / = Cr <16wt％，10≤Ni≤19wt％，Cx4 = Nb，Ta和Zr中的至少一种2wt％，余量为铁和不可避免的杂质，在制造所述钢时与钛（0.05≤Ti≤0.2wt％）混合。

5. 发明授权

US08930069B2 In-vehicle system removing a freeze state of car navigation equipment 有权
标题翻译：车载系统清除汽车导航设备的冻结状态
公开(公告)号：US08930069B2
公开(公告)日：2015-01-06
申请号：US13443451
申请日：2012-04-10
申请人： Yuu Nagata , Takeshi Yoshida , Yuu Funakura , Yuichi Ochiai
发明人： Yuu Nagata , Takeshi Yoshida , Yuu Funakura , Yuichi Ochiai
IPC分类号： G06F19/00 , G06F1/24 , G01C21/26
CPC分类号： G06F1/24 , G01C21/265
摘要： An in-vehicle system according to an embodiment includes a detection unit, a reception unit, and a recovery unit. The detection unit detects a freeze state of a navigation apparatus. The reception unit receives a recovery operation from a user demanding recovery of the navigation apparatus. The recovery unit performs a recovery process for the navigation apparatus upon detection of the freeze state of the navigation apparatus by the detection unit and upon reception of the recovery operation by the reception unit.
摘要翻译：根据实施例的车载系统包括检测单元，接收单元和恢复单元。检测单元检测导航装置的冻结状态。接收单元从要求恢复导航装置的用户接收恢复操作。检测单元检测出导航装置的冻结状态，接收单元接收到恢复动作后，恢复单元对导航装置进行恢复处理。

6. 发明授权

US08852769B2 Nonaqueous electrolyte secondary battery and method for manufacturing the same 有权
标题翻译：非水电解质二次电池及其制造方法
公开(公告)号：US08852769B2
公开(公告)日：2014-10-07
申请号：US13279452
申请日：2011-10-24
申请人： Masahiro Iyori , Hirofusa Tanaka , Naoki Terada , Seiji Omura , Yasuhiro Yamauchi , Toshiyuki Nohma , Masahide Miyake , Yasuyuki Kusumoto , Shigeki Matsuta , Toyoki Fujihara , Takeshi Yoshida
发明人： Masahiro Iyori , Hirofusa Tanaka , Naoki Terada , Seiji Omura , Yasuhiro Yamauchi , Toshiyuki Nohma , Masahide Miyake , Yasuyuki Kusumoto , Shigeki Matsuta , Toyoki Fujihara , Takeshi Yoshida
IPC分类号： H01M2/00 , H01M2/26 , H01M10/42 , H01M10/04 , H01M2/34 , H01M10/052 , H01M10/0587
CPC分类号： H01M2/263 , H01M2/345 , H01M10/0431 , H01M10/052 , H01M10/0587 , H01M10/4235 , H01M2200/20 , Y02E60/12 , Y02T10/7011 , Y10T29/49108 , Y10T29/49115
摘要： A nonaqueous secondary battery includes a current cutoff mechanism that cuts off a current in a short period of time in response to a rise in pressure inside a battery outer body in at least one of a conductive path through which a current is taken out from a positive electrode plate to outside of the battery and a conductive path through which a current is taken out from a negative electrode plate to outside of the battery. At least one type selected from an oligomer containing a cyclohexyl group and a phenyl group, a modified product of the oligomer containing a cyclohexyl group and a phenyl group, a polymer containing a cyclohexyl group and a phenyl group, and a modified product of the polymer containing a cyclohexyl group and a phenyl group is present on the surface of the positive electrode plate.
摘要翻译：非水二次电池包括电流切断机构，该电流切断机构响应于电池外体中的至少一个导电路径中的压力升高而在短时间内截止电流，电流从正极电极板到电池外部，以及导电路径，电流从负极板取出到电池外部。选自包含环己基和苯基的低聚物中的至少一种，包含环己基和苯基的低聚物的改性产物，含有环己基和苯基的聚合物，以及聚合物的改性产物含有环己基和苯基存在于正极板的表面上。

7. 发明授权

US08545668B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08545668B2
公开(公告)日：2013-10-01
申请号：US13545685
申请日：2012-07-10
申请人： Takeshi Yoshida
发明人： Takeshi Yoshida
IPC分类号： H01L21/304 , B08B3/04
CPC分类号： H01L21/67051
摘要： A substrate processing apparatus comprises a substrate holding mechanism, a process liquid supplying mechanism supplying a process liquid, a first guide portion around the substrate holding mechanism having an upper edge portion extending toward the rotation axis for guiding scattered process to flow down, a second guide portion provided around the substrate holding mechanism outside the first guide portion and having an upper edge portion extending toward the rotation axis as vertically overlapping with the upper edge portion of the first guide portion for further guiding the scattered process liquid to flow down, a recovery channel provided outside and integrally with the first guide portion for recovering the process liquid guided by the second guide portion, and a driving mechanism for moving up and down the first guide portion and the second guide portion independently of each other.
摘要翻译：一种基板处理装置，包括基板保持机构，供给处理液的处理液供给机构，具有朝向旋转轴延伸的上边缘部的基板保持机构周围的第一引导部，用于引导分散处理向下流动;第二引导件在所述第一引导部的外侧设置在所述基板保持机构周围的部分，具有与所述第一引导部的所述上缘部垂直重叠的朝向所述旋转轴延伸的上边缘部，用于进一步引导所述散射处理液体向下流动，设置在与第一引导部分的外部并整体上，用于回收由第二引导部分引导的处理液体;以及驱动机构，用于彼此独立地上下移动第一引导部分和第二引导部分。

8. 发明授权

US08519499B2 Solid-state image sensor and method of manufacturing the same 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US08519499B2
公开(公告)日：2013-08-27
申请号：US12845194
申请日：2010-07-28
申请人： Mariko Saito , Ikuko Inoue , Takeshi Yoshida
发明人： Mariko Saito , Ikuko Inoue , Takeshi Yoshida
IPC分类号： H01L29/00
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14636 , H01L27/14645
摘要： According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.
摘要翻译：根据一个实施例，固态图像传感器包括：半导体衬底，包括光入射的第一表面和与第一表面相对的第二表面;形成在半导体衬底中的像素区域，并且包括光电转换元件，将入射光转换为电信号，形成在半导体衬底中的周边区域，并且包括控制像素区域中的元件的操作的电路;多个互连，其形成在堆叠在多个层间绝缘膜第二表面，并且连接到电路，以及形成在层叠的层间绝缘膜和互连件上的支撑衬底。形成在最上层的层间绝缘膜中的最上层的一个互连掩埋在最上层的层间绝缘膜中形成的第一沟槽中。

9. 发明申请

US20120242035A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20120242035A1
公开(公告)日：2012-09-27
申请号：US13425291
申请日：2012-03-20
申请人： Takeshi Yoshida
发明人： Takeshi Yoshida
IPC分类号： B65H31/26
CPC分类号： B65H31/20 , B65H31/02 , B65H31/26 , B65H2301/4212 , B65H2405/1111 , B65H2405/1112 , B65H2405/1114 , B65H2801/06
摘要： An image forming apparatus includes a housing, an image forming unit disposed inside the housing, a discharging portion, a stacking unit and a pressing member. The discharging portion is configured to discharge a sheet medium on which an image is formed by the image forming unit. The stacking unit is configured to stack the sheet medium discharged from the discharging portion. The stacking unit includes a stacking surface portion on which the sheet medium is stacked. The stacking surface portion includes a planar portion formed flat and a protruding portion configured to protrude upwardly from the planar portion. The pressing member is disposed in contact with an upper surface of the sheet medium stacked on the stacking surface portion.
摘要翻译：图像形成装置包括壳体，设置在壳体内部的图像形成单元，排出部，堆叠单元和按压构件。排出部被配置为对由图像形成单元在其上形成有图像的片材介质进行排出。堆叠单元构造成堆叠从排出部排出的片材介质。堆叠单元包括堆叠表面部分，片材介质堆叠在该堆叠表面部分上。堆叠表面部分包括平坦部分的平面部分和从平面部分向上突出的突出部分。按压构件设置成与堆叠在堆叠表面部分上的片介质的上表面接触。

10. 发明授权

US08272911B2 Method for manufacturing image display element 有权
标题翻译：图像显示元件制造方法
公开(公告)号：US08272911B2
公开(公告)日：2012-09-25
申请号：US12700047
申请日：2010-02-04
申请人： Zenichiro Hara , Satoru Kiridoshi , Suguru Nagae , Takanori Okumura , Yoshiyuki Suehiro , Nobuo Terazaki , Yutaka Saito , Yuji Saito , Toshinao Yuki , Ryota Oki , Takeshi Yoshida , Jun Sugahara , Hiroyuki Sato , Yoshinori Fukuda , Yosuke Sato , Masami Kimura
发明人： Zenichiro Hara , Satoru Kiridoshi , Suguru Nagae , Takanori Okumura , Yoshiyuki Suehiro , Nobuo Terazaki , Yutaka Saito , Yuji Saito , Toshinao Yuki , Ryota Oki , Takeshi Yoshida , Jun Sugahara , Hiroyuki Sato , Yoshinori Fukuda , Yosuke Sato , Masami Kimura
IPC分类号： H01J9/00 , B32B38/04
CPC分类号： H01L27/3276 , G02F1/1303 , G02F1/133351 , H01L27/3288 , H01L27/3297 , H01L2251/566
摘要： A method for manufacturing an image display element including: a front panel; a back panel facing the front panel; plural pixels arranged in a matrix between the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels, the panels being bonded with the pixels and the electrodes interposed therebetween, and the electrodes being connected to a driving control circuit via metal wires, includes a first step of performing dicing from the back side of the opposing surface from the front panel, and forming a groove part such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, with the back panel bonded thereto, and a second step of forming the metal wires so as to be connected to the electrode terminals exposed at the groove part.
摘要翻译：一种用于制造图像显示元件的方法，包括：前面板; 面向前面板的后面板; 多个像素布置在面板之间的矩阵中，并被选择为处于显示状态或非显示状态; 以及用于控制像素的多个电极，与像素连接的面板和插入其间的电极，并且通过金属线连接到驱动控制电路的电极包括从相对表面的背面进行切割的第一步骤并且形成沟槽部分，使得连接到电极的电极端子在相邻的多个像素线之间暴露，后面板接合到其上，并且第二步骤形成金属线以便连接到电极端子暴露在凹槽部分。

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