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1. 发明授权

US5480818A Method for forming a film and method for manufacturing a thin film transistor 失效
标题翻译：薄膜晶体管的制造方法和薄膜晶体管的制造方法
公开(公告)号：US5480818A
公开(公告)日：1996-01-02
申请号：US15512
申请日：1993-02-09
申请人： Tomotaka Matsumoto , Jun Inoue , Teruhiko Ichimura , Yuji Murata , Junichi Watanabe , Yoshio Nagahiro , Mari Hodate , Kenichi Oki , Masahiro Okabe
发明人： Tomotaka Matsumoto , Jun Inoue , Teruhiko Ichimura , Yuji Murata , Junichi Watanabe , Yoshio Nagahiro , Mari Hodate , Kenichi Oki , Masahiro Okabe
IPC分类号： H01L21/205 , H01L21/336 , H01L21/86 , H01L29/78 , H01L29/786
CPC分类号： C23C16/45525 , C23C16/403 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/86 , H01L29/66757 , H01L29/66765 , H01L29/7833 , H01L29/78621 , H01L29/78675 , H01L29/78678 , Y10S148/15 , Y10S148/169
摘要： A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.
摘要翻译：沉积在由二元系材料制成的绝缘膜上的晶体硅膜或通过原子层沉积法形成的二元系统半导体膜具有大至约200nm的晶粒。因此，载波的移动性增加。其晶体硅在250℃至400℃的温度范围内生长。因此，当使用形成的晶体硅形成平面型薄膜晶体管，反向交错型薄膜晶体管或交错型薄膜晶体管时在由二元系材料制成的这些膜上，其晶体管特性得到改善。此外，当通过化学气相沉积法在薄膜晶体管的源电极和漏电极与连接到这些电极的硅膜之间形成含硅膜的杂质时，调节含杂质气体的流量，使得随着接近源电极和漏电极的杂质密度变大，晶体管截止状态下的漏电流减小。由于在这种情况下通过化学气相沉积法生长含有杂质的硅膜，因此可以容易地控制其杂质浓度，并且还提高了控制精度。

2. 发明申请

US20230139673A1 RESIN PARTICLE, TONER, DEVELOPER, DEVELOPER STORAGE CONTAINER, RESIN PARTICLE PRODUCING METHOD, TONER PRODUCING METHOD, IMAGE FORMING APPARATUS, AND IMAGE FORMING METHOD 有权
公开(公告)号：US20230139673A1
公开(公告)日：2023-05-04
申请号：US18046436
申请日：2022-10-13
申请人： Kohsuke SATOH , Tsuneyasu Nagatomo , Junichi Watanabe
发明人： Kohsuke SATOH , Tsuneyasu Nagatomo , Junichi Watanabe
IPC分类号： C08L67/02 , C08G63/183 , G03G9/087 , G03G9/08
摘要： The present disclosure provides a resin particle including a binder resin, in which the binder resin contains a biomass-derived resin and a recycled resin, and a content (% by mass) of the biomass-derived resin and a content (% by mass) of the recycled resin in the binder resin satisfy the following relational equation (1): Content of recycled resin >Content of biomass-derived resin.

3. 发明授权

US08091387B2 Method of manufacturing glass articles, method of manufacturing glass gobs, and method of manufacturing optical elements 有权
标题翻译：制造玻璃制品的方法，制造玻璃料滴的方法以及制造光学元件的方法
公开(公告)号：US08091387B2
公开(公告)日：2012-01-10
申请号：US10802837
申请日：2004-03-18
申请人： Yoshinori Iguchi , Katsumi Utsugi , Atsushi Uezaki , Junichi Watanabe , Tetsuya Saito , Akira Murakami
发明人： Yoshinori Iguchi , Katsumi Utsugi , Atsushi Uezaki , Junichi Watanabe , Tetsuya Saito , Akira Murakami
IPC分类号： C03B7/10 , C03B7/12 , C03B7/14
CPC分类号： C03B7/12 , C03B7/14 , C03B40/04 , Y02P40/57
摘要： A method of manufacturing high-quality preforms from glass melt, manufacturing glass elements, such as lenses, by press molding these preforms and, manufacturing optical elements by reheating and press molding these glass gobs. In the method glass gobs are continuously separated from a glass melt flow continuously flowing out of a nozzle and the separated glass gobs are formed with glass forming members that are intermittently or continuously moving. A support member is made to approach the front end of the nozzle, the front end of the glass melt flow is received by the support member, and the support member is dropped more rapidly than the rate of flow of the glass melt flow to separate a glass gob from the glass melt flow. The separated glass gob is transferred from the support member to a stopped or moving glass forming member to mold a glass article.
摘要翻译：一种从玻璃熔体制造高品质预成型件的方法，通过对这些预型件进行压制成型制造玻璃元件，例如透镜，以及通过再加热和压制这些玻璃料滴来制造光学元件。在该方法中，玻璃料料从连续流出喷嘴的玻璃熔体流连续分离，并且分离的玻璃料滴形成为间歇或连续移动的玻璃形成部件。使支撑构件靠近喷嘴的前端，玻璃熔体流的前端被支撑构件接收，并且支撑构件比玻璃熔体流的流动速度更快地下落以分离玻璃料滴从玻璃熔体流出。分离的玻璃料滴从支撑构件转移到停止或移动的玻璃形成构件以模制玻璃制品。

4. 发明授权

US08049446B2 Motor control device and magnetic pole position estimation precision confirming method 有权
标题翻译：电机控制装置和磁极位置估算精度确认方法
公开(公告)号：US08049446B2
公开(公告)日：2011-11-01
申请号：US12499539
申请日：2009-07-08
申请人： Junichi Watanabe
发明人： Junichi Watanabe
IPC分类号： H02P21/00
CPC分类号： H02P21/14
摘要： A motor control device includes a dq-axis current control unit for generating a dq-axis voltage reference based on a dq-axis current reference and a dq-axis current signal, an initial magnetic pole position estimation unit for estimating a magnetic pole position of the motor upon power-on to generate a magnetic pole position signal, and a magnetic pole position estimation precision confirming unit for supplying a current in a d-axis direction after generation of the magnetic pole position signal with the initial magnetic pole position estimation unit, and checking an error of the magnetic pole position signal based on an angle of movement of the motor.
摘要翻译：电动机控制装置包括：dq轴电流控制单元，用于基于dq轴电流基准和dq轴电流信号生成dq轴电压基准;初始磁极位置估计单元，用于估计磁极位置的磁极位置电动机上产生磁极位置信号;以及磁极位置估计精度确认单元，用于在与初始磁极位置估计单元产生磁极位置信号之后在d轴方向上提供电流，并根据电动机的运动角检查磁极位置信号的误差。

5. 发明申请

US20110255709A1 Audio control device and audio output device 有权
标题翻译：音频控制装置和音频输出装置
公开(公告)号：US20110255709A1
公开(公告)日：2011-10-20
申请号：US13067682
申请日：2011-06-20
申请人： Hideki Nishimura , Junichi Watanabe
发明人： Hideki Nishimura , Junichi Watanabe
IPC分类号： H04R3/00 , G06F17/00
CPC分类号： H04S1/007 , H04R1/005 , H04R5/04
摘要： An audio output device includes two digital microphone units that, upon receiving sound, convert the sound to PDM digital audio signals in which a state is represented by 1 or 0 in each predetermined period. The audio output device generates half-period digital audio signals, which are signals of a half period of the predetermined period, by using first digital audio signals and second digital audio signals that are the digital audio signals converted by the two digital microphones, where the states of the first digital audio signals are each reflected in one of two half periods corresponding to the predetermined period and states of the second audio signals are each reflected in the other half period. The audio output device then converts the half-period digital audio signals, which are generated by the generator, to analog audio signals and outputs the analog audio signals.
摘要翻译：音频输出装置包括两个数字麦克风单元，其在接收到声音时，将声音转换成PDM数字音频信号，其中状态在每个预定周期中以1或0表示。音频输出装置通过使用作为由两个数字麦克风转换的数字音频信号的第一数字音频信号和第二数字音频信号，产生作为预定周期的半个周期的信号的半周期数字音频信号，其中第一数字音频信号的状态各自被反映在对应于预定周期的两个半周期中的一个中，并且第二音频信号的状态各自反映在另一个半周期中。然后，音频输出装置将由发生器产生的半周期数字音频信号转换为模拟音频信号并输出模拟音频信号。

6. 发明授权

US07948075B2 Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and semiconductor module using the same 有权
标题翻译：氮化硅衬底及其制造方法以及使用该氮化硅衬底的氮化硅电路板和半导体模块
公开(公告)号：US07948075B2
公开(公告)日：2011-05-24
申请号：US12379868
申请日：2009-03-03
申请人： Youichirou Kaga , Junichi Watanabe
发明人： Youichirou Kaga , Junichi Watanabe
IPC分类号： H01L23/00
CPC分类号： C04B35/5935 , C04B2235/3206 , C04B2235/3224 , C04B2235/3225 , C04B2235/662 , C04B2235/787 , C04B2235/963 , C04B2235/9638 , H01L23/15 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H05K1/0306 , H05K3/0011 , H05K2203/025 , H05K2203/1105 , H05K2203/1536 , Y10T428/24926 , H01L2924/00
摘要： A silicon nitride substrate having appropriately adjusted warpage and surface roughness can be obtained by mixing magnesium oxide of 3 to 4 wt % and at least one kind of rare-earth element oxide of 2 to 5 wt % with silicon nitride source material powder to form a sheet-molded body, sintering the sheet-molded body, and performing a heat treatment at a temperature of 1,550 to 1,700 degree C. with a pressure of 0.5 to 6.0 kPa with a plurality of substrates being stacked. Also, a silicon nitride circuit board and a semiconductor module using the same are provided.
摘要翻译：通过将3〜4重量％的氧化镁和2〜5重量％的至少一种稀土元素氧化物与氮化硅源材料粉末混合，可以得到适当调整的翘曲和表面粗糙度的氮化硅衬底，以形成片状成型体，烧结片状成型体，并且在0.5〜6.0kPa的压力下在1550〜1700℃的温度下进行热处理，堆叠多个基板。此外，提供了氮化硅电路板和使用其的半导体模块。

7. 发明申请

US20090101392A1 CIRCUIT BOARD AND SEMICONDUCTOR MODULE USING THIS, PRODUCTION METHOD FOR CIRCUIT BOARD 有权
标题翻译：使用此电路板和半导体模块，电路板的生产方法
公开(公告)号：US20090101392A1
公开(公告)日：2009-04-23
申请号：US12065009
申请日：2006-08-17
申请人： Youichirou Kaga , Hisayuki Imamura , Junichi Watanabe
发明人： Youichirou Kaga , Hisayuki Imamura , Junichi Watanabe
IPC分类号： H05K1/00 , B23K31/02 , H05K1/16
CPC分类号： H01L23/3735 , H01L23/15 , H01L23/3731 , H01L2224/291 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H05K1/0271 , H05K1/0306 , H05K2201/0352 , H05K2201/0355 , H05K2201/09736 , Y10T29/49117 , Y10T29/49124 , Y10T29/49155 , H01L2924/014 , H01L2924/00
摘要： An object of this invention is to get a circuit board and a semiconductor module with high endurance against thermal cycles, and which is hard to be broken under thermal cycles, even if thick metal circuit board and thick metal heat sink are used, corresponding to high power operation of semiconductor chip. This circuit board comprises, an insulating-ceramic substrate, a metal circuit plate bonded to one face of the insulating-ceramic substrate, a metal heat sink bonded to another face of the insulating-ceramic substrate, wherein (t12−t22)/tc2/K
摘要翻译：本发明的一个目的是获得具有高热循环耐久性的电路板和半导体模块，并且即使使用厚金属电路板和厚金属散热器，对应于高的热循环也难以在热循环下断裂半导体芯片的功率运行。该电路板包括绝缘陶瓷基板，与绝缘陶瓷基板的一面接合的金属电路板，与绝缘陶瓷基板的另一面接合的金属散热器，其中（t12-t22）/ tc2 / K <1.5，绝缘陶瓷基板的厚度为tc，金属电路板的厚度为t1，金属散热片的厚度为t2，绝缘陶瓷基板的内部断裂韧性值为K.

8. 发明申请

US20080176014A1 Mat-shaped inorganic fiber thermal insulator, package thereof and thermal insulation structure thereof 审中-公开
标题翻译：垫状无机纤维绝热体及其绝热结构
公开(公告)号：US20080176014A1
公开(公告)日：2008-07-24
申请号：US12073956
申请日：2008-03-12
申请人： Keiji Otaki , Yuji Mita , Tomohiro Watanabe , Junichi Watanabe
发明人： Keiji Otaki , Yuji Mita , Tomohiro Watanabe , Junichi Watanabe
IPC分类号： B32B5/12
CPC分类号： D04H13/00 , E04B1/7662 , E04B1/78 , E04B2001/7683 , E04B2001/7695 , F16L59/026 , Y10T428/13 , Y10T428/237 , Y10T428/24124 , Y10T428/24314
摘要： A mat-shaped thermal insulator made of inorganic fiber, wherein at least a part of inorganic fibers is built-up in a direction parallel to lateral surfaces of the insulator, and said insulator is formed by cutting a fibrous built-up article formed by building-up inorganic fibers, to form cut built-up articles, rotating at least one of the cut articles by an angle of 90 degrees in a direction perpendicular to a longitudinal direction, to form a rotated built-up article in which the inorganic fibers are built-up in a direction parallel to lateral sides of the cut article, and integrating the cut articles and/or the rotated article transversally in a direction perpendicular to cutting direction. Preferably, the lateral surfaces of the insulator are inclined. Still preferably, longitudinal cuts are formed on the lateral surfaces of the insulator so as to make the insulator partially compressible.
摘要翻译：由无机纤维制成的垫状绝热体，其中至少一部分无机纤维在与绝缘子的侧面平行的方向上积聚，所述绝缘体通过切割由建筑物形成的纤维组合物形成 - 无机纤维，以形成切割的组合物，使至少一个切割制品在垂直于纵向方向的方向上旋转90度的角度，以形成旋转的组合物，其中无机纤维是在与切割物品的横向平行的方向上积聚，并且在垂直于切割方向的方向上将切割的物品和/或旋转的物品横向整合。优选地，绝缘体的侧表面是倾斜的。更优选地，在绝缘体的侧表面上形成纵向切口，以使得绝缘体部分地可压缩。

9. 发明申请

US20050136554A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050136554A1
公开(公告)日：2005-06-23
申请号：US10835311
申请日：2004-04-30
申请人： Yoichi Okita , Junichi Watanabe , Naoya Sashida
发明人： Yoichi Okita , Junichi Watanabe , Naoya Sashida
IPC分类号： H01L27/105 , H01L21/00 , H01L21/02 , H01L21/326 , H01L21/479 , H01L21/82 , H01L21/8246
CPC分类号： H01L28/57 , H01L27/11507
摘要： An Al2O3 film for covering a ferroelectric capacitor is formed by a sputtering process. The thickness of the Al2O3 film is preferably optimized according to amount of remanent polarization and fatigue tolerance required for the ferroelectric capacitor, for example, 10 nm to 100 nm. Next, oxygen is supplied to a PZT film via the Al203 film by executing a heat treatment in an oxygen atmosphere. As a result, an oxygen deficit in the PZT film is made up for. At this time, evaporation of Pb in the PZT film is suppressed because of the Al2O3 film, and deterioration of the fatigue tolerance responsive to decrease of Pb amount is suppressed. Subsequently, another Al2O3 film is formed as a second protective film by the sputtering process for opposing the deterioration factor in later process. The thickness of the Al2O3 film is preferably the thickness which sufficiently protects the ferroelectric capacitor from the deterioration factor in later wiring process.
摘要翻译：通过溅射法形成用于覆盖铁电电容器的Al 2 O 3 N 3膜。 Al 2 O 3膜的厚度优选根据强电介质电容器所需的剩余极化和耐疲劳性的量优化，例如10nm至100nm。接着，通过在氧气氛中进行热处理，通过Al 2 O 3膜将氧气供给到PZT膜。结果，PZT膜中的氧气缺乏。此时，由于Al 2 O 3 O 3膜，PZT膜中的Pb的蒸发被抑制，并且抑制了响应于Pb量降低的疲劳强度的劣化。随后，通过溅射工艺形成另一个Al 2 O 3 3膜作为第二保护膜，用于与稍后的工艺中的劣化因子相反。 Al 2 O 3膜的厚度优选是在稍后的布线工艺中充分保护铁电电容器免受劣化因素的厚度。

10. 发明授权

US06350748B1 Sulfamoyl compounds and agricultural and horticultural fungicides 有权
标题翻译：氨磺酰化合物和农业和园艺杀真菌剂
公开(公告)号：US06350748B1
公开(公告)日：2002-02-26
申请号：US09529817
申请日：2000-06-02
申请人： Toshiaki Takeyama , Toshimasa Hamada , Hiroaki Takahashi , Junichi Watanabe , Kazuhiro Yamagishi , Masanori Nishioka , Hiroyuki Suzuki
发明人： Toshiaki Takeyama , Toshimasa Hamada , Hiroaki Takahashi , Junichi Watanabe , Kazuhiro Yamagishi , Masanori Nishioka , Hiroyuki Suzuki
IPC分类号： C07D40306
CPC分类号： C07D249/08 , A01N43/653 , A01N43/84 , A01N43/90 , C07D249/12 , C07D403/12 , C07D471/04
摘要： A sulfamoyl compound of the general formulae (1): wherein R1 and R2 are each independently C1-4 alkyl, or R1 and R2 together are C4-6 alkylene or C4-6 alkyleneoxy, Y is H, halogen, C1-8 alkyl, C1-8 alkoxy, C1-8 alkylthio, C1-8 haloalkyl, C1-8 haloalkoxy or C1-8 haloalkylthio, A is a predetermined heterocyclic group, B is a predetermined heterocyclic group which is identical with or different from A, W is a chemical bond or O, V is O or S, D, E, F and G are each independently N, CR7, CR8, CR9 or CR10, and R3, R4, R5, R6, R7, R8, R9, R10 and R11 are each independently predetermined group such as H, or an unsubstituted or substituted aliphatic, aromatic or heterocyclic group. The sulfamoyl compound is useful as an agricultural and horticultural fungicide.
摘要翻译：通式（1）的氨磺酰基化合物：其中R 1和R 2各自独立地为C 1-4烷基，或者R 1和R 2一起为C 4-6亚烷基或C 4-6亚烷氧基，Y为H，卤素，C 1-8烷基，C 1 烷氧基，C 1-8烷硫基，C 1-8卤代烷基，C 1-8卤代烷氧基或C 1-8卤代烷硫基，A是预定的杂环基，B是与A相同或不同的预定杂环基，W是化学键或O，V为O或S，D，E，F和G各自独立地为N，CR7，CR8，CR9或CR10，R3，R4，R5，R6，R7，R8，R9，R10和R11各自独立地为预定基团如H，或未取代或取代的脂族，芳族或杂环基团。氨磺酰化合物可用作农业和园艺杀真菌剂。

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