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1. 发明专利

JP2010092600A Illumination device 审中-公开
标题翻译：照明装置
公开(公告)号：JP2010092600A
公开(公告)日：2010-04-22
申请号：JP2008258315
申请日：2008-10-03
申请人： Tomohiro Watanabe , 智洋渡邉
发明人： WATANABE TOMOHIRO
IPC分类号： F21S2/00 , F21Y101/02
摘要： PROBLEM TO BE SOLVED: To provide an illumination device improved in workability and flexibility of design, while not exposing wiring.
SOLUTION: The illumination device 2 includes light-emitting units 3, joints 4 and a power supply device 5. Each of the light-emitting units 3 includes light-emitting diodes 12a to 12c on a surface of a substrate 10, and circuits 13a and 13b electrically connected to the light-emitting diodes 12a to 12c within the substrate 10. Recessed portions 14 are formed on sides of the light-emitting unit 3, and terminals 17 and 19 are provided in the recessed portions 14 to lead electric power to the circuits 13a and 13b from outside. The joints 4 make the light-emitting units 3 and 3 detachable and connect electrically the terminals 17 and 19 of the light-emitting units 3 and 3. The power supply device 5 is connected to the light-emitting units 3 to supply electric power to the light-emitting units 3 from the power source. The light-emitting unit and the joints 4 are connected by engaging flange portions 21 and 22 of the joints 4 with the recessed portions 14.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高可加工性和设计灵活性的照明装置，同时不暴露布线。解决方案：照明装置2包括发光单元3，接头4和电源装置5.每个发光单元3包括在基板10的表面上的发光二极管12a至12c，以及电路13a和13b与基板10内的发光二极管12a〜12c电连接。凹部14形成在发光单元3的侧面，端子17和19设置在凹部14中以引导电从外部向电路13a和13b供电。接头4使得发光单元3和3可拆卸并且电连接到发光单元3和3的端子17和19.电源装置5连接到发光单元3以将电力提供给来自电源的发光单元3。发光单元和接头4通过将接头4的凸缘部分21和22与凹部14接合而连接。版权所有（C）2010，JPO＆INPIT

2. 发明授权

US09101514B2 Method of ejecting faulty absorbent article 有权
标题翻译：弹出吸收性物品的方法
公开(公告)号：US09101514B2
公开(公告)日：2015-08-11
申请号：US14130155
申请日：2012-06-29
申请人： Kazuhiko Takahashi , Tomohiro Watanabe , Masanobu Miyaki
发明人： Kazuhiko Takahashi , Tomohiro Watanabe , Masanobu Miyaki
IPC分类号： B07C5/342 , A61F13/15
CPC分类号： A61F13/15764 , A61F13/15772 , B07C5/342
摘要： A method of ejecting a faulty absorbent article which includes a step of detecting a failure region of an absorbent article in which a failure location of the absorbent article exists, and a type of a failure in the failure region, by identifying a shape of the absorbent article in the course of the manufacturing line, a step of deciding the absorbent article to be ejected based on the detection result of the failure region and the type of failure in the step of detecting, and a step of disengaging, from the manufacturing line, the absorbent article decided in the step of deciding, and then ejecting the absorbent article in the course of the manufacturing line. In the step of deciding, the number of absorbent articles to be ejected in the step of ejecting is decided according to the failure region and the type of the failure.
摘要翻译：一种排出有缺陷的吸收性物品的方法，其包括检测存在吸收性物品的故障位置的吸收性物品的失效区域的步骤，以及破坏区域的失效类型，通过识别吸收性物品的形状在制造过程中的制品，基于故障区域的检测结果和检测步骤中的故障类型来决定要排出的吸收性物品的步骤，以及从生产线脱离的步骤，所述吸收性物品在制造过程中决定，然后喷射吸收性物品的步骤中决定。在决定步骤中，根据故障区域和故障类型来决定喷射步骤中要喷射的吸收性物品的数量。

3. 发明授权

US08921246B2 Glass composition and optical device 有权
标题翻译：玻璃组成和光学装置
公开(公告)号：US08921246B2
公开(公告)日：2014-12-30
申请号：US13580603
申请日：2011-02-23
申请人： Tomohiro Watanabe , Taihei Mukaide
发明人： Tomohiro Watanabe , Taihei Mukaide
IPC分类号： C03C3/062 , C03C3/095 , C03C4/00
CPC分类号： C03C3/062 , C03C4/0085
摘要： There is provided a glass composition containing an oxide containing Lu, Si, and Al, in which the composition of the glass composition lies within a compositional region of a ternary composition diagram of Lu, Si, and Al in terms of cation percent, the compositional region being defined by the following six points: (32.3% LuO3/2, 30.0% SiO2, 37.7% AlO3/2), (32.3% LuO3/2, 37.7% SiO2, 30.0% AlO3/2), (20.8% LuO3/2, 55.0% SiO2, 24.2% AlO3/2), (10.0% LuO3/2, 45.0% SiO2, 45.0% AlO3/2), (20.8% LuO3/2, 24.2% SiO2, 55.0% AlO3/2), and (30.0% LuO3/2, 25.0% SiO2, 45.0% AlO3/2). For the glass composition, a glassy state having low or no intrinsic birefringence in the ultraviolet region is stably obtained.
摘要翻译：提供了含有Lu，Si和Al的氧化物的玻璃组合物，其中玻璃组合物的组成位于Lu，Si和Al的三元组成图的组成范围内，以阳离子百分比计，组成（32.3％LuO3 / 2,30.0％SiO2，37.7％AlO3 / 2），（32.3％LuO3 / 2,37.7％SiO2，30.0％AlO3 / 2）（20.8％LuO3 / 2％，55.0％SiO 2，24.2％AlO 3/2）（10.0％LuO 3/2，45.0％SiO 2，45.0％AlO 3/2）（20.8％LuO 3/2，24.2％SiO 2，55.0％AlO 3/2）（30.0％LuO 3/2，25.0％SiO 2，45.0％AlO 3/2）。对于玻璃组合物，稳定地获得在紫外区域中具有低或没有固有双折射的玻璃状态。

4. 发明授权

US08785240B2 Light-emitting apparatus and production method thereof 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08785240B2
公开(公告)日：2014-07-22
申请号：US12530638
申请日：2008-04-03
申请人： Tomohiro Watanabe
发明人： Tomohiro Watanabe
IPC分类号： H01L29/786 , H01L21/30 , H01L33/00 , H01L29/66 , H01L27/12 , H01L51/00 , H01L51/52 , H01L27/32
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L27/3262 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L51/0026 , H01L51/0037 , H01L51/5237
摘要： Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is less than 10−5 g/m2.
摘要翻译：提供一种制造具有驱动有机EL器件的场效应晶体管的发光装置的方法，所述场效应晶体管包括含有选自In和Zn中的至少一种元素的氧化物半导体，所述方法包括以下步骤：形成在衬底上的场效应晶体管; 形成绝缘层; 在绝缘层上形成下电极; 在下电极上形成用于构成有机EL器件的有机层; 在有机层上形成上电极; 并且在形成场效应晶体管的半导体层的步骤之后，并且在形成有机层的步骤之前，进行热处理，使得在形成所述有机层的步骤期间，来自场效应晶体管的作为H 2 O可解吸的成分的量有机层小于10-5g / m2。

5. 发明授权

US08354326B2 Precision trench formation through oxide region formation for a semiconductor device 有权
标题翻译：通过半导体器件的氧化物区形成形成精密沟槽
公开(公告)号：US08354326B2
公开(公告)日：2013-01-15
申请号：US12961352
申请日：2010-12-06
申请人： Fumihiko Inoue , Takayuki Maruyama , Tomohiro Watanabe
发明人： Fumihiko Inoue , Takayuki Maruyama , Tomohiro Watanabe
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/785
摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
摘要翻译：公开了用于精密沟槽形成的结构和方法。在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

6. 发明授权

US08344373B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08344373B2
公开(公告)日：2013-01-01
申请号：US12891704
申请日：2010-09-27
申请人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
发明人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L29/7869
摘要： To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.
摘要翻译：为了在氧化物半导体薄层晶体管中实现阈值电压对电应力的稳定性和抑制传输特性中阈值电压变化的两者。薄膜晶体管包括氧化物半导体层和设置成与氧化物半导体层接触的栅极绝缘层，其中氧化物半导体层包含氢原子，并且包括至少两个用作氧化物半导体的有源层的区域并且在层厚度方向上具有不同的平均氢浓度; 并且当用作氧化物半导体的有源层的区域依次定义为从栅极绝缘层的侧面开始第一区域和第二区域时，第一区域的平均氢浓度低于平均氢浓度的第二个地区。

7. 发明授权

US07989432B2 Micelles 有权
标题翻译：胶束
公开(公告)号：US07989432B2
公开(公告)日：2011-08-02
申请号：US12142608
申请日：2008-06-19
申请人： James McShane , Tori Arens , Kazuhiro Kaneko , Tomohiro Watanabe , Kazuhide Ashizawa
发明人： James McShane , Tori Arens , Kazuhiro Kaneko , Tomohiro Watanabe , Kazuhide Ashizawa
IPC分类号： A61K31/70
CPC分类号： A61K31/7024 , A61K9/107 , A61K9/1075 , A61K9/19 , A61K31/665 , A61K31/70
摘要： The present invention provides micelles, solutions comprising micelles, methods for preparing micelles, and methods for delivering micelles to patients. The micelles have fixed, preselected hydrodynamic diameters and are formed from basic or acidic amphiphilic compounds.
摘要翻译：本发明提供胶束，包含胶束的溶液，制备胶束的方法以及将胶束递送给患者的方法。胶束具有固定的，预选的流体动力学直径，并由碱性或酸性两亲性化合物形成。

8. 发明申请

US20110081767A1 PRECISION TRENCH FORMATION THROUGH OXIDE REGION FORMATION FOR A SEMICONDUCTOR DEVICE 有权
标题翻译：通过半导体器件的氧化物形成形成的精密铁素体形成
公开(公告)号：US20110081767A1
公开(公告)日：2011-04-07
申请号：US12961352
申请日：2010-12-06
申请人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
发明人： Fumihiko INOUE , Takayuki MARUYAMA , Tomohiro WATANABE
IPC分类号： H01L21/762
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/785
摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
摘要翻译：公开了用于精密沟槽形成的结构和方法。在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

9. 发明申请

US20100078633A1 INSULATED GATE TYPE TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：绝缘栅型晶体管和显示器件
公开(公告)号：US20100078633A1
公开(公告)日：2010-04-01
申请号：US12597219
申请日：2008-04-30
申请人： Tomohiro Watanabe
发明人： Tomohiro Watanabe
IPC分类号： H01L33/00 , H01L21/20 , H01L29/02
CPC分类号： H01L29/7869
摘要： A transistor comprises an active layer of an oxide containing at least one element selected from In, Ga and Zn. The active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nm3 or less.
摘要翻译：晶体管包括含有选自In，Ga和Zn中的至少一种元素的氧化物的活性层。形成有源层，使得通过温度程序解吸分析监测为水分子的解吸气体为1.4 / nm 3以下。

10. 发明授权

US07390793B2 Micelles 有权
标题翻译：胶束
公开(公告)号：US07390793B2
公开(公告)日：2008-06-24
申请号：US11106654
申请日：2005-04-15
申请人： James McShane , Tori Arens , Kazuhiro Kaneko , Tomohiro Watanabe , Kazuhide Ashizawa
发明人： James McShane , Tori Arens , Kazuhiro Kaneko , Tomohiro Watanabe , Kazuhide Ashizawa
IPC分类号： A61K31/70
CPC分类号： A61K31/7024 , A61K9/107 , A61K9/1075 , A61K9/19 , A61K31/665 , A61K31/70
摘要： The present invention provides micelles, solutions comprising micelles, methods for preparing micelles, and methods for delivering micelles to patients. The micelles have fixed, preselected hydrodynamic diameters and are formed from basic or acidic amphiphilic compounds.
摘要翻译：本发明提供胶束，包含胶束的溶液，制备胶束的方法以及将胶束递送给患者的方法。胶束具有固定的，预选的流体动力学直径，并由碱性或酸性两亲性化合物形成。

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