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1. 发明授权

US5480818A Method for forming a film and method for manufacturing a thin film transistor 失效
标题翻译：薄膜晶体管的制造方法和薄膜晶体管的制造方法
公开(公告)号：US5480818A
公开(公告)日：1996-01-02
申请号：US15512
申请日：1993-02-09
申请人： Tomotaka Matsumoto , Jun Inoue , Teruhiko Ichimura , Yuji Murata , Junichi Watanabe , Yoshio Nagahiro , Mari Hodate , Kenichi Oki , Masahiro Okabe
发明人： Tomotaka Matsumoto , Jun Inoue , Teruhiko Ichimura , Yuji Murata , Junichi Watanabe , Yoshio Nagahiro , Mari Hodate , Kenichi Oki , Masahiro Okabe
IPC分类号： H01L21/205 , H01L21/336 , H01L21/86 , H01L29/78 , H01L29/786
CPC分类号： C23C16/45525 , C23C16/403 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/86 , H01L29/66757 , H01L29/66765 , H01L29/7833 , H01L29/78621 , H01L29/78675 , H01L29/78678 , Y10S148/15 , Y10S148/169
摘要： A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.
摘要翻译：沉积在由二元系材料制成的绝缘膜上的晶体硅膜或通过原子层沉积法形成的二元系统半导体膜具有大至约200nm的晶粒。因此，载波的移动性增加。其晶体硅在250℃至400℃的温度范围内生长。因此，当使用形成的晶体硅形成平面型薄膜晶体管，反向交错型薄膜晶体管或交错型薄膜晶体管时在由二元系材料制成的这些膜上，其晶体管特性得到改善。此外，当通过化学气相沉积法在薄膜晶体管的源电极和漏电极与连接到这些电极的硅膜之间形成含硅膜的杂质时，调节含杂质气体的流量，使得随着接近源电极和漏电极的杂质密度变大，晶体管截止状态下的漏电流减小。由于在这种情况下通过化学气相沉积法生长含有杂质的硅膜，因此可以容易地控制其杂质浓度，并且还提高了控制精度。

2. 发明授权

US5518940A Method of manufacturing thin film transistors in a liquid crystal display 失效
标题翻译：在液晶显示器中制造薄膜晶体管的方法
公开(公告)号：US5518940A
公开(公告)日：1996-05-21
申请号：US368906
申请日：1995-01-05
申请人： Mari Hodate , Norihisa Matsumoto , Kohji Ohgata , Tamotsu Wada , Ken-iti Yanai , Ken-ichi Oki , Yasuyoshi Mishima , Michiko Takei , Tatsuya Kakehi , Masahiro Okabe
发明人： Mari Hodate , Norihisa Matsumoto , Kohji Ohgata , Tamotsu Wada , Ken-iti Yanai , Ken-ichi Oki , Yasuyoshi Mishima , Michiko Takei , Tatsuya Kakehi , Masahiro Okabe
IPC分类号： G02F1/1362 , H01L21/265 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/8232
CPC分类号： H01L29/66757 , G02F1/13454 , H01L29/66575 , H01L29/6659 , H01L29/7833 , H01L29/78621 , Y10S438/948
摘要： A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.
摘要翻译：根据本发明的制造半导体器件的方法包括在栅电极的顶部和侧面上形成抗蚀剂膜之后，将杂质引入到具有栅电极和抗蚀剂膜作为掩模的半导体层中的工艺，将栅极电极浸入含有抗蚀剂的电解质的半导体层上并向栅电极施加电压。

3. 发明授权

US5994173A Thin film transistor matrix device and method for fabricating the same 失效
标题翻译：制造薄膜晶体管矩阵器件的方法
公开(公告)号：US5994173A
公开(公告)日：1999-11-30
申请号：US941224
申请日：1997-09-26
申请人： Ken-ichi Oki , Ken-ichi Yanai , Tamotsu Wada , Koji Ohgata , Yutaka Takizawa , Masahiro Okabe , Tsutomu Tanaka
发明人： Ken-ichi Oki , Ken-ichi Yanai , Tamotsu Wada , Koji Ohgata , Yutaka Takizawa , Masahiro Okabe , Tsutomu Tanaka
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L31/0392 , H01L21/306 , H01L29/78
CPC分类号： H01L27/124 , G02F1/136286 , G02F1/1368 , G02F2001/136295 , H01L29/41733
摘要： A thin film transistor matrix device comprises an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate, source electrodes connected to the respective picture element electrodes, drain electrodes opposed to the respective source electrodes, operational semiconductor layers sandwiched by the source electrodes and the drain electrodes, and gate electrodes formed on the operational semiconductor layers through gate insulating films, each gate electrode being narrowed with respect to the associated gate insulating film so that side walls of the gate electrode forms a step with respect to side walls of the associated gate insulating film which is a substrate of the gate electrode. The gate electrode is made narrower with respect to the gate insulating film to form a step between the side walls of the gate electrode with respect to those of the gate insulating film, whereby leak currents from the source electrode or the drain electrode to the gate electrode along the mesa side surfaces of the TFT can be simply suppressed. Accordingly a TFT matrix device having little wasteful current consumption can be realized.
摘要翻译：薄膜晶体管矩阵器件包括绝缘衬底，在绝缘衬底上以矩阵形式布置的多个像素电极，连接到各个像素电极的源电极，与各个源电极相对的漏极电极，被源电极和漏极以及通过栅极绝缘膜形成在工作半导体层上的栅电极，每个栅电极相对于相关的栅极绝缘膜变窄，使得栅电极的侧壁相对于侧面形成一个台阶作为栅电极的基板的相关栅极绝缘膜的壁。使栅电极相对于栅极绝缘膜变窄，在栅电极的侧壁之间相对于栅极绝缘膜的侧壁形成台阶，由此从源电极或漏电极到栅电极的漏电流沿着TFT的台面侧表面可以简单地抑制。因此，可以实现具有少量浪费电流消耗的TFT矩阵装置。

4. 发明授权

US5728592A Method for fabricating a thin film transistor matrix device 失效
标题翻译：制造薄膜晶体管矩阵器件的方法
公开(公告)号：US5728592A
公开(公告)日：1998-03-17
申请号：US499000
申请日：1995-07-06
申请人： Ken-ichi Oki , Ken-ichi Yanai , Tamotsu Wada , Koji Ohgata , Yutaka Takizawa , Masahiro Okabe , Tsutomu Tanaka
发明人： Ken-ichi Oki , Ken-ichi Yanai , Tamotsu Wada , Koji Ohgata , Yutaka Takizawa , Masahiro Okabe , Tsutomu Tanaka
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L21/288 , H01L21/31
CPC分类号： H01L27/124 , G02F1/136286 , G02F1/1368 , G02F2001/136295 , H01L29/41733
摘要： A thin film transistor matrix device is fabricated by forming a transparent conductor film and a metal film on an insulating substrate in this order. The metal film and the transparent conductor film are together patterned to form picture element electrodes, and drain bus lines or gate bus lines. Source electrodes and drain electrodes may also be formed from the transparent conductor film and metal film. A semiconductor layer, an insulating film and a conductor film may be formed on the entire surface in this order. In this case, the conductor film, the insulator film and the semiconductor layer are patterned to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and gate electrodes and gate bus lines from the conductor film. By patterning the conductor film, the insulating film and the semiconductor layer, the metal film of the picture element electrodes and drain bus lines is exposed. Alternatively, the metal film may be patterned with the semiconductor layer, insulating film and conductor film to expose the transparent conductor film. A current is applied to the drain bus lines or gate bus lines in an electrolyte solution to selectively form a film on the drain bus lines or gate bus lines. The film may be a protecting film serving as a mask to allow the metal film on the picture element electrodes to be etched.
摘要翻译：通过在绝缘基板上依次形成透明导体膜和金属膜来制造薄膜晶体管矩阵器件。金属膜和透明导体膜一起构图以形成像素电极，以及漏极总线或栅极总线。源电极和漏电极也可以由透明导体膜和金属膜形成。可以依次在整个表面上形成半导体层，绝缘膜和导体膜。在这种情况下，对导体膜，绝缘体膜和半导体层进行构图，从半导体层形成有源层，从绝缘膜形成栅极绝缘膜，从导体膜形成栅极电极和栅极总线。通过图案化导体膜，绝缘膜和半导体层，使像素电极和漏极总线的金属膜露出。或者，可以用半导体层，绝缘膜和导体膜对金属膜进行图案化以使透明导体膜露出。在电解质溶液中的漏极总线或栅极总线上施加电流以在漏极总线或栅极总线上选择性地形成膜。该膜可以是用作掩模的保护膜，以允许蚀刻图像元件电极上的金属膜。

5. 发明授权

US6130456A Thin film transistor matrix device 失效
标题翻译：薄膜晶体管矩阵器件
公开(公告)号：US6130456A
公开(公告)日：2000-10-10
申请号：US956772
申请日：1997-10-22
申请人： Ken-ichi Oki , Ken-ichi Yanai , Tamotsu Wada , Koji Ohgata , Yutaka Takizawa , Masahiro Okabe , Tsutomu Tanaka
发明人： Ken-ichi Oki , Ken-ichi Yanai , Tamotsu Wada , Koji Ohgata , Yutaka Takizawa , Masahiro Okabe , Tsutomu Tanaka
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84
CPC分类号： H01L27/124 , G02F1/136286 , G02F1/1368 , G02F2001/136295 , H01L29/41733
摘要： A thin film transistor matrix device comprises an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate, source electrodes connected to the respective picture element electrodes, drain electrodes opposed to the respective source electrodes, operational semiconductor layers sandwiched by the source electrodes and the drain electrodes, and gate electrodes formed on the operational semiconductor layers through gate insulating films, each gate electrode being narrowed with respect to the associated gate insulating film so that side walls of the gate electrode forms a step with respect to side walls of the associated gate insulating film which is a substrate of the gate electrode. The gate electrode is made narrower with respect to the gate insulating film to form a step between the side walls of the gate electrode with respect to those of the gate insulating film, whereby leak currents from the source electrode or the drain electrode to the gate electrode along the mesa side surfaces of the TFT can be simply suppressed. Accordingly a TFT matrix device having little wasteful current consumption can be realized.
摘要翻译：薄膜晶体管矩阵器件包括绝缘衬底，在绝缘衬底上以矩阵形式布置的多个像素电极，连接到各个像素电极的源电极，与各个源电极相对的漏极电极，被源电极和漏极以及通过栅极绝缘膜形成在工作半导体层上的栅电极，每个栅电极相对于相关的栅极绝缘膜变窄，使得栅电极的侧壁相对于侧面形成一个台阶作为栅电极的基板的相关栅极绝缘膜的壁。使栅电极相对于栅极绝缘膜变窄，在栅电极的侧壁之间相对于栅极绝缘膜的侧壁形成台阶，由此从源电极或漏电极到栅电极的漏电流沿着TFT的台面侧表面可以简单地抑制。因此，可以实现具有少量浪费电流消耗的TFT矩阵装置。

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