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1. 发明申请

US20120135302A1 SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, AND POWER STORAGE DEVICE 有权
标题翻译：半导体膜，其制造方法和电力存储装置
公开(公告)号：US20120135302A1
公开(公告)日：2012-05-31
申请号：US13301020
申请日：2011-11-21
申请人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
发明人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
IPC分类号： H01M4/13 , H01L21/28 , H01M4/02 , H01L29/02
CPC分类号： H01L29/12 , H01M4/0428 , H01M4/134 , H01M4/366 , H01M4/386
摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.
摘要翻译：提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。此外，提供了具有改善的充放电容量的蓄电装置。使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。这样的半导体膜可以应用于蓄电装置的电极。

2. 发明授权

US08455044B2 Semiconductor film, method for manufacturing the same, and power storage device 有权
标题翻译：半导体膜及其制造方法以及蓄电装置
公开(公告)号：US08455044B2
公开(公告)日：2013-06-04
申请号：US13301020
申请日：2011-11-21
申请人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
发明人： Tomokazu Yokoi , Takayuki Inoue , Makoto Furuno
IPC分类号： B05D5/12
CPC分类号： H01L29/12 , H01M4/0428 , H01M4/134 , H01M4/366 , H01M4/386
摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof. Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.
摘要翻译：提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。此外，提供了具有改善的充放电容量的蓄电装置。使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。这样的半导体膜可以应用于蓄电装置的电极。

3. 发明授权

US09162594B2 Vehicle seat 有权
标题翻译：车座
公开(公告)号：US09162594B2
公开(公告)日：2015-10-20
申请号：US13811507
申请日：2011-07-21
申请人： Takamasa Adachi , Hiroyuki Kaku , Takayuki Inoue , Yutaka Kizawa , Akimitsu Kurihara
发明人： Takamasa Adachi , Hiroyuki Kaku , Takayuki Inoue , Yutaka Kizawa , Akimitsu Kurihara
IPC分类号： B60N2/42 , B60N2/427
CPC分类号： B60N2/4228 , B60N2/42745
摘要： Provided is a vehicle seat by which an impact of rear end collision is reduced and of which peripheral structure of a side frame is simplified. A vehicle seat includes: a seat back frame which includes side portions positioned at the sides thereof, a pressure receiving member which is jointed to the seat back frame through joint members and supports an occupant, and an impact reduction member which is disposed on at least one of the side portions to engage with the joint member and to move by a predetermined amount of impact load applied to the pressure receiving member so that the pressure receiving member is caused to move rearward; in which the side portion includes a convex portion protruding in the movement range of the impact reduction member, and the impact reduction member abuts against the convex portion so that the movement of the impact reduction member is prevented.
摘要翻译：提供了一种车辆座椅，通过该座椅，后端碰撞的冲击降低，并且侧框架的外围结构被简化。车辆座椅包括：座椅靠背框架，其包括位于其侧面的侧部;压力接收构件，其通过接合构件接合到座椅靠背框架并且支撑乘员;以及减震构件，其至少设置在至少与接合构件接合并以施加到压力接收构件的预定量的冲击载荷移动的侧部中的一个，使得压力接收构件向后移动; 其中所述侧部包括在所述冲击减少构件的移动范围内突出的凸部，并且所述冲击减小构件抵靠所述凸部，从而防止所述减震构件的移动。

4. 发明授权

US08625085B2 Defect evaluation method for semiconductor 有权
标题翻译：半导体缺陷评估方法
公开(公告)号：US08625085B2
公开(公告)日：2014-01-07
申请号：US13407943
申请日：2012-02-29
申请人： Ryosuke Watanabe , Masashi Tsubuku , Takayuki Inoue
发明人： Ryosuke Watanabe , Masashi Tsubuku , Takayuki Inoue
IPC分类号： G01N21/00
CPC分类号： H01L22/14 , H01L22/12
摘要： Even in the case of a sample exhibiting low photoresponse, such as a wide bandgap semiconductor, a measurement method which enables highly accurate CPM measurement is provided. When CPM measurement is performed, photoexcited carriers which are generated by light irradiation of a sample exhibiting low photoresponse such as a wide bandgap semiconductor are instantly removed by application of positive bias voltage to a third electrode which is provided in the sample in addition to two electrodes used for measurement. When the photoexcited carriers are removed, even in the case of the sample exhibiting low photoresponse, the controllability of a photocurrent value is improved and CPM measurement can be performed accurately.
摘要翻译：即使在具有低光响应的样品（例如宽带隙半导体）的情况下，也提供了能够进行高度精确的CPM测量的测量方法。当进行CPM测量时，通过向除了两个电极之外的样品中提供的第三电极施加正偏置电压，立即除去通过光照射出具有低光响应的样品（例如宽带隙半导体）产生的光激发载流子用于测量。当除去光激发载体时，即使在样品表现出较低的光响应的情况下，光电流值的可控性得到改善，也可以精确地进行CPM测量。

5. 发明授权

US08535405B2 Honeycomb structure 有权
标题翻译：蜂窝结构
公开(公告)号：US08535405B2
公开(公告)日：2013-09-17
申请号：US13591494
申请日：2012-08-22
申请人： Yasushi Noguchi , Atsushi Kaneda , Takayuki Inoue
发明人： Yasushi Noguchi , Atsushi Kaneda , Takayuki Inoue
IPC分类号： B01D39/14 , B01D39/06 , B01D24/00 , B01D50/00 , F01N3/00
CPC分类号： C04B38/0006 , B01D46/2425 , B01D46/247 , B01D2046/2433 , B01D2046/2437 , C04B35/565 , C04B35/6263 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/0081 , C04B2235/3826 , C04B2235/40 , C04B2235/402 , C04B2235/404 , C04B2235/428 , C04B2235/5436 , C04B2235/663 , C04B2235/786 , C04B2235/80 , F01N3/2026 , F01N3/2828 , Y02T10/26 , C04B38/0009 , C04B38/0054 , C04B38/0074 , C04B35/573 , C04B41/4572 , C04B41/5059 , C04B41/5096 , C04B41/526
摘要： The honeycomb structure is provided with a honeycomb structural section, a pair of lateral electrodes on the side face of the honeycomb structural section, and at least one intermediate layer between the honeycomb structural section and the lateral electrodes. The honeycomb structural section has silicon carbide particles having an average particle diameter of 3 to 40 μm and silicon, and the ratio (Si/SiC) of silicon (Si) to silicon carbide (SiC) is 10/90 to 40/60. The lateral electrodes have an average particle diameter of the silicon carbide particles of 10 to 70 μm and a Si/SiC ratio of 20/80 to 50/50. The intermediate layer has an average particle diameter of silicon carbide particles and Si/SiC between those of the honeycomb structural section and those of the lateral electrodes. The electric resistance between the lateral electrodes of the honeycomb structural section is 2 to 100Ω.
摘要翻译：蜂窝结构体在蜂窝结构部的侧面设置蜂窝结构部，一对侧面电极以及蜂窝结构部和侧面电极之间的至少一个中间层。蜂窝结构部具有平均粒径为3〜40μm的碳化硅颗粒和硅，硅（Si）与碳化硅（SiC）的比（Si / SiC）为10/90〜40/60。横向电极的碳化硅粒子的平均粒径为10〜70μm，Si / SiC比为20/80〜50/50。中间层具有碳化硅颗粒的平均粒径和蜂窝结构部分和侧面电极之间的Si / SiC的平均粒径。蜂窝结构部分的侧面电极之间的电阻为2〜100Om。

6. 发明授权

US08140045B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08140045B2
公开(公告)日：2012-03-20
申请号：US12003697
申请日：2007-12-31
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
IPC分类号： H04B1/28
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/0716 , G06K2017/0045
摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.
摘要翻译：半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路由无线信号产生。这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

7. 发明授权

US07737389B2 Image pickup device including photodetection surface and transfer control arrangement 有权
标题翻译：摄像装置，包括光电检测面和转印控制装置
公开(公告)号：US07737389B2
公开(公告)日：2010-06-15
申请号：US12000732
申请日：2007-12-17
申请人： Takayuki Inoue , Tadashi Maruno , Fumio Iwase
发明人： Takayuki Inoue , Tadashi Maruno , Fumio Iwase
IPC分类号： H01L27/00
CPC分类号： G01N21/6456 , G01J3/2803 , G01J3/2823 , G01J3/2889 , G01J3/4406 , G01J2003/2813 , G01J2003/282 , G01N21/645 , G01N2021/6417 , G01N2021/6423 , H04N5/3454 , H04N5/372
摘要： A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal. The data analyzer 16 inputs the detection signals based on the charges generated at the pixels, and computes autocorrelation functions of the input detection signals according to each pixel.
摘要翻译：荧光相关光谱分析仪1配备有激发光照明光学系统21，荧光成像光学系统22，CCD照相机15和数据分析器16.激发光照射光学系统21将激发光照射到测量样品S.荧光成像光学系统22将在测量样品S处产生的荧光图像成像到CCD照相机15的光电检测表面上。CCD照相机15根据照相机15对入射到光电检测表面上的荧光进行光电转换并输出由光电转换产生的电荷作为来自输出端的检测信号。数据分析器16基于在像素处产生的电荷输入检测信号，并根据每个像素计算输入检测信号的自相关函数。

8. 发明申请

US20090270376A1 HETEROCYCLIC JANUS KINASE 3 INHIBITORS 有权
标题翻译：杂交种JANUS KINASE 3抑制剂
公开(公告)号：US20090270376A1
公开(公告)日：2009-10-29
申请号：US12065234
申请日：2006-12-25
申请人： Takayuki Inoue , Akira Tanaka , Kazuo Nakai , Hiroshi Sasaki , Fumie Takahashi , Shohei Shirakami , Keiko Hatanaka , Yutaka Nakajima , Koichiro Mukoyoshi , Hisao Hamaguchi , Shigeki Kunikawa , Yasuyuki Higashi
发明人： Takayuki Inoue , Akira Tanaka , Kazuo Nakai , Hiroshi Sasaki , Fumie Takahashi , Shohei Shirakami , Keiko Hatanaka , Yutaka Nakajima , Koichiro Mukoyoshi , Hisao Hamaguchi , Shigeki Kunikawa , Yasuyuki Higashi
IPC分类号： A61K31/437 , C07D471/04 , C07D471/14 , A61K31/496 , A61K31/5377 , A61K31/541 , A61P37/00 , A61P25/28 , A61P35/00
CPC分类号： C07D451/04 , C07D471/04 , C07D471/14 , C07D519/00
摘要： The present invention provides a compound of formula (I) having an excellent JAK3 inhibition activity and being useful as an active ingredient of an agent for treating and/or preventing various immune diseases including autoimmune diseases inflammatory diseases, and allergic diseases. The compound according to the present invention has an inhibition activity against JAK3 and is thus useful as an active ingredient of an agent for treating or preventing diseases caused by undesirable cytokine signal transmission (e.g., rejection during organ/tissue transplantation, autoimmune diseases, multiple sclerosis, rheumatoid arthritis, psoriasis, asthma, atopic dermatitis, Alzheimer's disease, and atherosclerotic disease), or diseases caused by abnormal cytokine signal transmission (e.g., cancer and leukemia).
摘要翻译：本发明提供了具有优异的JAK3抑制活性的式（I）化合物，并且可用作治疗和/或预防各种免疫疾病，包括自身免疫性疾病炎性疾病和过敏性疾病的药剂的活性成分。根据本发明的化合物对JAK3具有抑制活性，因此可用作治疗或预防由不良细胞因子信号传导引起的疾病（例如器官/组织移植期间的排斥，自身免疫性疾病，多发性硬化症）的活性成分，类风湿性关节炎，牛皮癣，哮喘，特应性皮炎，阿尔茨海默病和动脉粥样硬化疾病）或由异常细胞因子信号传导引起的疾病（例如癌症和白血病）。

9. 发明授权

US07400396B2 Fluorescent correalated spectrometric analysis device 有权
标题翻译：荧光相关光谱分析装置
公开(公告)号：US07400396B2
公开(公告)日：2008-07-15
申请号：US10545393
申请日：2004-02-13
申请人： Hirohiko Watanabe , Motoyuki Watanabe , Takayuki Inoue , Tadashi Maruno , Fumio Iwase
发明人： Hirohiko Watanabe , Motoyuki Watanabe , Takayuki Inoue , Tadashi Maruno , Fumio Iwase
IPC分类号： G01J3/30
CPC分类号： G01N21/6456 , G01J3/2803 , G01J3/2823 , G01J3/2889 , G01J3/4406 , G01J2003/2813 , G01J2003/282 , G01N21/645 , G01N2021/6417 , G01N2021/6423 , H04N5/3454 , H04N5/372
摘要： A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal. The data analyzer 16 inputs the detection signals based on the charges generated at the pixels, and computes autocorrelation functions of the input detection signals according to each pixel.
摘要翻译：荧光相关光谱分析仪1配备有激发光照明光学系统21，荧光成像光学系统22，CCD照相机15和数据分析器16。激发光照射光学系统21将激发光照射到测量样品S的预定区域上。荧光成像光学系统22将在测量样品S处产生的荧光图像到CCD照相机15的光电检测表面上。 CCD摄像机15根据各像素对入射到光检测面上的荧光进行光电转换，并将从光电转换产生的电荷作为检测信号从输出端子输出。数据分析器16基于在像素处产生的电荷输入检测信号，并根据每个像素计算输入检测信号的自相关函数。

10. 发明申请

US20080165023A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080165023A1
公开(公告)日：2008-07-10
申请号：US12003697
申请日：2007-12-31
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Masami Endo , Hiroki Dembo , Daisuke Kawae , Takayuki Inoue , Munehiro Kozuma
IPC分类号： G08B21/00
CPC分类号： G06K19/07749 , G06K7/0008 , G06K19/0716 , G06K2017/0045
摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.
摘要翻译：半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路由无线信号产生。这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

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