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1. 发明申请

US20120135357A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS 审中-公开
标题翻译：聚合物，阳性抗蚀剂组合物和方法
公开(公告)号：US20120135357A1
公开(公告)日：2012-05-31
申请号：US13303283
申请日：2011-11-23
申请人： Tomohiro KOBAYASHI , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Kenji Funatsu , Seiichiro Tachibana
发明人： Tomohiro KOBAYASHI , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Kenji Funatsu , Seiichiro Tachibana
IPC分类号： G03F7/20 , C08F214/18
CPC分类号： G03F7/2041 , C08K5/375 , C08K5/42 , C08L41/00 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含聚合物，其包含适于在暴露于高能量辐射时产生酸的特定结构的重复单元，含内酯环结构的重复单元和酸不稳定单元，所有重复单元不含羟基可以形成具有矩形轮廓和改进的抗倒塌性的精细尺寸图案。

2. 发明申请

US20120196228A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用它的耐腐蚀组合物和图案处理方法
公开(公告)号：US20120196228A1
公开(公告)日：2012-08-02
申请号：US13345355
申请日：2012-01-06
申请人： Takayuki NAGASAWA , Tomohiro KOBAYASHI , Ryosuke TANIGUCHI , Masaki OHASHI
发明人： Takayuki NAGASAWA , Tomohiro KOBAYASHI , Ryosuke TANIGUCHI , Masaki OHASHI
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
摘要翻译：公开了一种抗蚀剂组合物，其至少包含：（A）含有一个或多个具有下列通式（1）和/或（2）所示结构的重复单元的聚合物，该聚合物的碱溶性通过一种酸，（B）一种光酸反应器，其响应于高能束，产生由以下通式（3）表示的磺酸，和（C）由以下通式（4）表示的磺酸盐。可以存在不仅具有优异的LWR和图案轮廓的抗蚀剂组合物，而且还具有极好的抗倒伏性能，并且提供使用其的图案化工艺。

3. 发明申请

US20120164577A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：积极的组合和绘图过程
公开(公告)号：US20120164577A1
公开(公告)日：2012-06-28
申请号：US13309083
申请日：2011-12-01
申请人： Ryosuke TANIGUCHI , Tomohiro KOBAYASHI , Takayuki NAGASAWA , Masaki OHASHI
发明人： Ryosuke TANIGUCHI , Tomohiro KOBAYASHI , Takayuki NAGASAWA , Masaki OHASHI
IPC分类号： G03F7/20 , G03F7/004 , G03F7/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/11 , G03F7/2041
摘要： A positive resist composition includes at least: (A) a polymer containing a repeating unit (a1) and an acid labile repeating unit (a2), wherein the repeating unit (a1) generates an acid of a structure represented by general formula (1) as a result that the repeating unit (a1) is sensed to a high-energy radiation, the polymer being changed in solubility in alkali by the acid; and (B) an onium sulfonate represented by general formula (2). Also, a positive resist composition, which simultaneously establishes a lower acid diffusing characteristic and a higher dissolution contrast, and which suppresses volatilization of components originated from the resist composition such as a generated acid, a quencher, and the like, to suppress a chemical flare, thereby improving a DOF, a circularity, an LWR, and the like of a hole pattern, trench pattern, and the like; and a patterning process using the positive resist composition.
摘要翻译：正型抗蚀剂组合物至少包括：（A）含有重复单元（a1）和酸不稳定重复单元（a2）的聚合物，其中重复单元（a1）产生由通式（1）表示的结构的酸，结果，重复单元（a1）被感测为高能量辐射，聚合物通过酸改变在碱中的溶解度; 和（B）由通式（2）表示的鎓磺酸盐。而且，正极抗蚀剂组合物同时形成较低的酸扩散特性和较高的溶解对比度，并且抑制源自抗蚀剂组合物的组分如产生的酸，猝灭剂等的挥发，以抑制化学发光从而改善孔图案，沟槽图案等的DOF，圆形度，LWR等; 以及使用正性抗蚀剂组合物的图案化工艺。

4. 发明申请

US20120308932A1 POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS USING SAID CHEMICALLY AMPLIFIED RESIST COMPOSITION 有权
标题翻译：聚合物，化学放大电阻组合物和使用化学放大电阻组合物的图案处理
公开(公告)号：US20120308932A1
公开(公告)日：2012-12-06
申请号：US13476700
申请日：2012-05-21
申请人： Masayoshi SAGEHASHI , Youichi OHSAWA , Koji HASEGAWA , Tomohiro KOBAYASHI
发明人： Masayoshi SAGEHASHI , Youichi OHSAWA , Koji HASEGAWA , Tomohiro KOBAYASHI
IPC分类号： G03F7/20 , G03F7/004 , C08F228/02
CPC分类号： G03F7/2041 , C08F24/00 , C08F220/38 , G03F7/0045 , G03F7/0397 , G03F7/11 , G03F7/30 , Y10S430/111
摘要： There is disclosed a polymer having a repeating unit shown by the following general formula (1). There can be, in a photolithography using a high energy beam such as an ArF excimer laser beam and an EUV as a light source, (1) a polymer that gives a resist composition having an appropriate adhesion with a substrate and being capable of forming a pattern having excellent resolution, especially an excellent rectangular pattern profile, (2) a chemically amplified resist composition containing the said polymer, and (3) a patterning process using the said chemically amplified resist composition.
摘要翻译：公开了具有下述通式（1）所示的重复单元的聚合物。在使用诸如ArF准分子激光束和EUV作为光源的高能量光束的光刻中可以存在：（1）提供具有与基板的适当粘合性并且能够形成具有优异分辨率的图案，特别是优异的矩形图案，（2）含有所述聚合物的化学放大抗蚀剂组合物，和（3）使用所述化学放大抗蚀剂组合物的图案化工艺。

5. 发明申请

US20120045724A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：硫酸盐，耐腐蚀组合物和方法
公开(公告)号：US20120045724A1
公开(公告)日：2012-02-23
申请号：US13214295
申请日：2011-08-22
申请人： Youichi OHSAWA , Masayoshi SAGEHASHI , Tomohiro KOBAYASHI
发明人： Youichi OHSAWA , Masayoshi SAGEHASHI , Tomohiro KOBAYASHI
IPC分类号： G03F7/20 , C07D333/46
CPC分类号： C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0048 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference.
摘要翻译：提供具有亲水性酚羟基或具有特定阴离子的乙二醇链的萘基锍阳离子的锍盐。锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解的优点和较少的图案依赖性或暗亮度差异。

6. 发明申请

US20080008959A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
标题翻译：积极的组合物和绘图过程
公开(公告)号：US20080008959A1
公开(公告)日：2008-01-10
申请号：US11773656
申请日：2007-07-05
申请人： Ryosuke TANIGUCHI , Tsunehiro NISHI , Tomohiro KOBAYASHI
发明人： Ryosuke TANIGUCHI , Tsunehiro NISHI , Tomohiro KOBAYASHI
IPC分类号： G03C1/10 , G03C5/38
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译：在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H，甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X O，S或CH 2 CH 2，X 2是O，S，CH 2， 2或CH 2 CH 2，n为1或2，a和b各自为0.01至小于1，c，d1和d2各自为从0到小于1，a + b + c + d1 + d2 = 1。当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

7. 发明申请

US20080008960A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
标题翻译：积极的组合物和绘图过程
公开(公告)号：US20080008960A1
公开(公告)日：2008-01-10
申请号：US11773706
申请日：2007-07-05
申请人： Ryosuke TANIGUCHI , Tsunehiro NISHI , Tomohiro KOBAYASHI
发明人： Ryosuke TANIGUCHI , Tsunehiro NISHI , Tomohiro KOBAYASHI
IPC分类号： G03C1/10 , G03C5/38
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译：在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H，甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X O，S或CH 2 CH 2，X 2是O，S，CH 2， 2或CH 2 CH 2，n为1或2，a1，a2，c，d1和d2各自为0至小于1，b 为0.01〜小于1，a1 + a2 + b + c + d1 + d2 = 1。当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

8. 发明申请

US20120196227A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, PATTERNING PROCESS, AND ACID-DECOMPOSABLE KETO ESTER COMPOUND 有权
标题翻译：化学放大正电阻组合物，花纹过程和酸分解酮酸酯化合物
公开(公告)号：US20120196227A1
公开(公告)日：2012-08-02
申请号：US13362445
申请日：2012-01-31
申请人： Takeru WATANABE , Tomohiro KOBAYASHI , Katsuya TAKEMURA , Jun HATAKEYAMA
发明人： Takeru WATANABE , Tomohiro KOBAYASHI , Katsuya TAKEMURA , Jun HATAKEYAMA
IPC分类号： G03F7/20 , C07J9/00 , G03F7/004
CPC分类号： G03F7/0397 , C07J9/005 , G03F7/0045 , G03F7/0392
摘要： A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of steroid skeleton which is insoluble in alkaline developer, but turns soluble in alkaline developer under the action of acid. The composition is exposed to EB, deep-UV or EUV and developed to form a pattern with a high resolution and improved LER.
摘要翻译：化学放大阳性抗蚀剂组合物包含不溶于碱性显影剂的类固醇骨架的酸可分解的酮酯化合物，但在酸的作用下可溶于碱性显影剂。将组合物暴露于EB，深UV或EUV并开发以形成具有高分辨率和改进的LER的图案。

9. 发明申请

US20090186307A1 HYDROGENATED RING-OPENING METATHESIS POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：氢化环开环聚合物，耐腐蚀组合物和图案处理
公开(公告)号：US20090186307A1
公开(公告)日：2009-07-23
申请号：US12252123
申请日：2008-10-15
申请人： Tomohiro KOBAYASHI , Takashi Kinsho , Takeru Watanabe , Tadahiro Sunaga , Yuichi Okawa
发明人： Tomohiro KOBAYASHI , Takashi Kinsho , Takeru Watanabe , Tadahiro Sunaga , Yuichi Okawa
IPC分类号： G03F7/20 , C08F224/00
CPC分类号： G03F7/0395 , C08G61/08 , Y10S430/106
摘要： Resist compositions comprising a hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone and comprising structural units having an oxygen atom incorporated as part of the cyclic structure exhibit a high resolution and minimal proximity bias upon ArF excimer laser lithography and have high etching resistance.
摘要翻译：包含在其主链上带有脂环结构的氢化开环复分解聚合物的抗蚀剂组合物并且包括具有作为环状结构的一部分结合的氧原子的结构单元在ArF准分子激光平版印刷法上表现出高分辨率和最小的邻近偏压，并具有高耐蚀刻性。

10. 发明申请

US20090011365A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20090011365A1
公开(公告)日：2009-01-08
申请号：US12167151
申请日：2008-07-02
申请人： Tomohiro KOBAYASHI , Jun Hatakeyama , Yuji Harada
发明人： Tomohiro KOBAYASHI , Jun Hatakeyama , Yuji Harada
IPC分类号： G03F7/20 , G03C1/00
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0392 , G03F7/11 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing α-trifluoromethylhydroxy as an additive. The composition is suited for immersion lithography.
摘要翻译：对于包含在酸作为基础树脂的作用下改变其碱溶解性的聚合物的抗蚀剂组合物，加入含有氨基的重复单元和含有α-三氟甲基羟基作为添加剂的重复单元的共聚物。该组合物适用于浸没光刻。

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