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1. 发明专利

JP2002366495A Mutual situation notification system 审中-公开
标题翻译：相关情况通报制度
公开(公告)号：JP2002366495A
公开(公告)日：2002-12-20
申请号：JP2001175236
申请日：2001-06-11
申请人： Yuji Harada , 裕司原田
发明人： HARADA YUJI
IPC分类号： G06F13/00 , H04M11/00 , H04W4/12 , H04W8/20 , H04Q7/38
摘要： PROBLEM TO BE SOLVED: To provide a mutual information notification system capable of notifying the other user of the user's own present situation information in a real time, and grasping what the other user is doing at present or what situation the other user is actually facing in a real time.
SOLUTION: When the present situation information is transmitted to a management server 400 by using a transmission side portable terminal 100, the contents are mail- transmitted through the management server 400 to a reception side terminal 200, and displayed as a stand-by picture at the reception side terminal 200. When the present situation information is updated at the transmission side, the stand-by picture at the reception side is immediately updated. Therefore, the user of the transmission side portable terminal 100 is able to notify the user of the reception side terminal 200 of his or her own present situation information in a real time, and the user of the reception side terminal 200 is able to grasp what the user of the transmission side portable terminal 100 is doing and what situation the use is actually facing in a real time. Thus, it is possible for a plurality of users to notify the other parties of their own present situation information in a real time by using a plurality of portable communication terminals equipped with the functions of both the transmission side terminal 100 and the reception side terminal 200.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种互信息通知系统，其能够实时通知用户自己的当前状况信息，并且掌握目前其他用户正在做什么或其他用户实际面临的情况一个实时的解决方案：通过使用发送侧便携式终端100将当前情况信息发送到管理服务器400时，将内容通过管理服务器400发送到接收侧终端200，并作为备用图像显示在接收侧终端200.当在发送侧更新当前情况信息时，立即更新接收侧的待机图像。因此，发送侧便携式终端100的用户能够实时地向接收侧终端200的用户通知其本身的现状信息，并且接收侧终端200的用户能够掌握什么发送侧便携式终端100的用户正在做什么，实际上实际使用什么样的情况。因此，通过使用配备有发送侧终端100和接收侧终端200的功能的多个便携式通信终端，多个用户可以实时地通知其他方自己的当前情况信息。

2. 发明授权

US08916331B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08916331B2
公开(公告)日：2014-12-23
申请号：US13324123
申请日：2011-12-13
申请人： Koji Hasegawa , Takeshi Sasami , Yuji Harada , Taku Morisawa
发明人： Koji Hasegawa , Takeshi Sasami , Yuji Harada , Taku Morisawa
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/11
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A polymer having a partial structure —C(CF3)2OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.
摘要翻译：使用重复单元中具有部分结构-C（CF 3）2 OH的聚合物作为配制抗蚀剂组合物的添加剂。由抗蚀剂组合物形成的光致抗蚀剂膜对水具有足够的阻挡性能，以防止任何抗蚀剂组分在水中浸出，从而最小化图案轮廓的任何变化。

3. 发明申请

US20130065183A1 PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20130065183A1
公开(公告)日：2013-03-14
申请号：US13606297
申请日：2012-09-07
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Masashi Iio , Yuuki Suka , Koji Hasegawa , Yuji Harada
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.
摘要翻译：提供了抗蚀剂组合物，其包含聚合物，其包含具有被保护的羟基的重复单元，光致酸产生剂，有机溶剂和包含氟化重复单元的无羟基聚合物添加剂。通过涂覆抗蚀剂组合物，预烘烤以形成抗蚀剂膜，在有机溶剂基显影剂中曝光，烘烤和显影曝光的膜以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。

4. 发明申请

US20120249995A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：US20120249995A1
公开(公告)日：2012-10-04
申请号：US13494746
申请日：2012-06-12
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03B27/32
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要翻译：本发明是用于浸没式光刻的保护膜材料，其能够进行希望的浸渍光刻，可以与光致抗蚀剂层的显影同时除去，并且具有优异的工艺适应性。本发明还包括使用该材料形成图案的方法。更具体地说，本发明是一种保护膜材料，其包含（i）包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含具有无氟烷基和任选的碱可溶重复单元的重复单元，或（ii）含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元无氟烷基和任选的碱溶性重复单元。

5. 发明申请

US20120214100A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 审中-公开
标题翻译：使用它的耐腐蚀组合物和图案处理方法
公开(公告)号：US20120214100A1
公开(公告)日：2012-08-23
申请号：US13396081
申请日：2012-02-14
申请人： Tomohiro Kobayashi , Youichi Ohsawa , Yuji Harada , Yuki Suka
发明人： Tomohiro Kobayashi , Youichi Ohsawa , Yuji Harada , Yuki Suka
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： There is disclosed a resist composition, wherein the composition is used in a lithography and comprises at least: a polymer (A) that becomes a base resin whose alkaline-solubility changes by an acid, a photo acid generator (B) generating a sulfonic acid represented by the following general formula (1) by responding to a high energy beam, and a polymer additive (C) represented by the following general formula (2). There can be provided a resist composition showing not only excellent lithography properties but also a high receding contact angle, and in addition, being capable of suppressing a blob defect in both the immersion exposures using and not using a top coat; and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂组合物，其中该组合物用于光刻，并且至少包括：成为其酸溶性变化的碱性树脂的聚合物（A），产生磺酸的光酸产生剂（B）由高能束响应的以下通式（1）表示，和由以下通式（2）表示的聚合物添加剂（C）。可以提供抗蚀剂组合物，其不仅显示出优异的光刻性能，而且还具有高的后退接触角，此外，还能够使用并不使用顶涂层来抑制浸没曝光中的斑点缺陷; 以及使用其的图案化处理。

6. 发明申请

US20110305979A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：耐腐顶层组合物和图案处理方法
公开(公告)号：US20110305979A1
公开(公告)日：2011-12-15
申请号：US13116853
申请日：2011-05-26
申请人： Yuji HARADA , Taku MORISAWA , Takeru WATANABE , Yuki SUKA
发明人： Yuji HARADA , Taku MORISAWA , Takeru WATANABE , Yuki SUKA
IPC分类号： G03F1/00 , C09D127/12 , C08K5/06 , G03F7/20
CPC分类号： G03F7/2041 , C08F220/20 , C08F220/22 , C08K5/05 , C08K5/06 , G03F7/11 , C08F222/1006 , C08F228/02
摘要： The invention provides a resist top coat composition wherein the composition contains polymer (P1-1) with a weight-average molecular weight of 1,000 to 500,000, having at least repeating units represented by the following general formulae (1a), (1b-1), and (1c). There can be a resist top coat composition having excellent water repellent and water sliding properties with fewer development defects and with a good resist pattern profile after development, and a patterning process using this composition.
摘要翻译：本发明提供一种抗蚀剂面漆组合物，其中组合物含有重均分子量为1,000至500,000的聚合物（P1-1），至少具有由以下通式（1a），（1b-1）表示的重复单元，，（1c）。可以使用具有优异的防水性和水滑动性的抗蚀剂面漆组合物，具有较少的显影缺陷和显影后的良好抗蚀剂图案轮廓，以及使用该组合物的图案化工艺。

7. 发明授权

US07759711B2 Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same 失效
标题翻译：具有由于晶格缺陷引起的电阻增加的基板的半导体器件及其制造方法
公开(公告)号：US07759711B2
公开(公告)日：2010-07-20
申请号：US12255933
申请日：2008-10-22
申请人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
发明人： Kazuyuki Sawada , Yuji Harada , Masahiko Niwayama , Saichirou Kaneko , Yoshimi Shimizu
IPC分类号： H01L29/32 , H01L21/26
CPC分类号： H01L29/7393 , H01L29/063 , H01L29/66325
摘要： Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.
摘要翻译：公开了一种半导体器件，包括：形成在P型半导体衬底中的N型RESURF区; 形成在半导体衬底的上部以与RESURF区相邻的P型基极区; 形成在所述基底区域中以与所述RESURF区域分离的N型发射极/源极区域; 形成在所述基极区域中以与所述发射极/源极区域相邻的P型基极连接区域; 栅极绝缘膜和覆盖发射极/源极区域，基极区域和RESURF区域的栅电极; 以及形成在RESURF区域中以与基底区域分离的P型集电极区域。在半导体衬底中产生晶格缺陷，使得半导体衬底的电阻值是取决于注入在半导体衬底中的杂质的浓度的半导体衬底的电阻值的两倍或更多。

8. 发明授权

US07666967B2 Ester compound, polymer, resist composition, and patterning process 有权
标题翻译：酯化合物，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07666967B2
公开(公告)日：2010-02-23
申请号：US11606069
申请日：2006-11-30
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Kazuhiko Maeda , Haruhiko Komoriya , Michitaka Ootani
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Kazuhiko Maeda , Haruhiko Komoriya , Michitaka Ootani
IPC分类号： C08F214/18
CPC分类号： C07D307/93 , C07D409/12 , G03F7/0046 , G03F7/0397
摘要： A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
摘要翻译：使用包含通过聚合式（1）的酯化合物获得的重复单元（2）的聚合物来形成抗蚀剂组合物。 R 1是F或C 1 -C 6氟代烷基，R 2是H或C 1 -C 8烷基，R 3是O或C 1 -C 6亚烷基，R 4和R 5各自是H或C 1 -C 10烷基或氟代烷基，R 6是H或酸不稳定基团。当通过ArF光刻处理时，抗蚀剂组合物具有改进的分辨率，透明度，最小的线边缘粗糙度和耐蚀刻性的优点。当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时，抗蚀剂组合物表现出更好的性能。

9. 发明授权

US07642034B2 Polymer, resist protective coating material, and patterning process 有权
标题翻译：聚合物，抗蚀剂保护涂层材料和图案化工艺
公开(公告)号：US07642034B2
公开(公告)日：2010-01-05
申请号：US11699485
申请日：2007-01-30
申请人： Jun Hatakeyama , Koji Hasegawa , Yuji Harada
发明人： Jun Hatakeyama , Koji Hasegawa , Yuji Harada
IPC分类号： G03F7/00 , G03F7/004 , C08F218/00
CPC分类号： G03F7/11 , C08F220/18 , C08F220/24 , C08F220/26 , C08F220/28 , C08F232/08 , G03F7/0046 , G03F7/2041
摘要： A polymer comprising repeat units having formula (1) wherein R1 and R2 are hydrogen or C1-C12 alkyl, or R1 and R2 may bond together to form a ring, and R30 is hydrogen or methyl is used to formulate a resist protective coating material. A protective coating formed therefrom on a resist film is water-insoluble, dissolvable in alkali aqueous solution or alkaline developer, and immiscible with the resist film so that the immersion lithography can be conducted in a satisfactory manner. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.
摘要翻译：包含具有式（1）的重复单元的聚合物，其中R 1和R 2是氢或C 1 -C 12烷基，或者R 1和R 2可以键合在一起形成环，并且R 30是氢或甲基来配制抗蚀剂保护涂层材料。在抗蚀剂膜上形成的保护涂层是水不溶性的，可溶于碱性水溶液或碱性显影剂中，与抗蚀剂膜不混溶，使浸渍光刻可以以令人满意的方式进行。在碱显影过程中，可以同时实现抗蚀剂膜的开发和保护涂层的去除。

10. 发明申请

US20090280434A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20090280434A1
公开(公告)日：2009-11-12
申请号：US12463751
申请日：2009-05-11
申请人： Yuji HARADA , Jun Hatakeyama , Kazunori Maeda , Koji Hasegawa , Satoshi Shinachi
发明人： Yuji HARADA , Jun Hatakeyama , Kazunori Maeda , Koji Hasegawa , Satoshi Shinachi
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A copolymer of an alkali-soluble (α-trifluoromethyl)-acrylate and a norbornene derivative is useful as an additive to a resist composition. When processed by immersion lithography, the resist composition exhibits excellent water repellency and water slip and forms a pattern with few development defects.
摘要翻译：碱溶性（α-三氟甲基）丙烯酸酯和降冰片烯衍生物的共聚物可用作抗蚀剂组合物的添加剂。当通过浸渍光刻处理时，抗蚀剂组合物表现出优异的防水性和水滑动性并且形成几乎没有显影缺陷的图案。

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