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1. 发明授权

US07687824B2 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device 有权
标题翻译：提高III族氮化物晶体的表面平坦度的方法，用于外延生长的衬底和半导体器件
公开(公告)号：US07687824B2
公开(公告)日：2010-03-30
申请号：US11167078
申请日：2005-06-24
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya
IPC分类号： H01L29/24
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/3245
摘要： A heating process is performed in a nitrogen atmosphere at a temperature of not less than 1650° C. upon an epitaxial substrate including a single crystal base and an upper layer made of a group-III nitride crystal and epitaxially formed on a main surface of the single crystal base. The result shows that the heating process reduces the number of pits in a top surface to produce the effect of improving the surface flatness of the group-III nitride crystal. The result also shows that the dislocation density in the group-III nitride crystal is reduced to not more than one-half the dislocation density obtained before the heat treatment.
摘要翻译：在氮气气氛中，在包含单晶基底和由III族氮化物晶体构成的上层的外延基板上，在不低于1650℃的温度下进行加热处理，外延形成在单晶底座。结果表明，加热过程减少顶表面中的凹坑的数量，以产生提高III族氮化物晶体的表面平坦度的效果。结果还表明，III族氮化物晶体中的位错密度降低到不超过热处理前获得的位错密度的一半。

2. 发明授权

US06770914B2 III nitride semiconductor substrate for ELO 有权
标题翻译： III型氮化物半导体衬底
公开(公告)号：US06770914B2
公开(公告)日：2004-08-03
申请号：US10163256
申请日：2002-06-05
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L2922
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least Al is directly formed on a base made of e.g. a sapphire single crystal, and not formed through a buffer layer formed at a low temperature. After that patterns made of e.g SiO2 are formed on the underlayer.
摘要翻译：提供了用于ELO的III族氮化物半导体衬底，用于形成其表面被独立于膜的厚度来控制的III族氮化物膜。至少包含Al的III族氮化物底层直接形成在由例如玻璃基材制成的基材上。蓝宝石单晶，并且不通过在低温下形成的缓冲层形成。之后，在底层上形成由例如SiO 2制成的图案。

3. 发明授权

US06703255B2 Method for fabricating a III nitride film 有权
标题翻译： III族氮化物膜的制造方法
公开(公告)号：US06703255B2
公开(公告)日：2004-03-09
申请号：US10102545
申请日：2002-03-20
申请人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/0075
摘要： Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third nitride epitaxially grown thereon. The island-shaped crystal portions function as nuclei during the growth of the third nitride-including film.
摘要翻译：多个岛状晶体部分形成在第一含Al氮化物基底上。岛状晶体部分由第二氮化物制成，并且具有包含外延生长在其上的第三氮化物的氮化物膜。岛状晶体部分在第三含氮化物膜的生长期间用作核。

4. 发明申请

US20050287774A1 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device 有权
标题翻译：提高III族氮化物晶体的表面平坦度的方法，用于外延生长的衬底和半导体器件
公开(公告)号：US20050287774A1
公开(公告)日：2005-12-29
申请号：US11167078
申请日：2005-06-24
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya
IPC分类号： C30B25/20 , C30B29/40 , H01L21/00 , H01L21/20 , H01L21/324 , H01L21/336
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/3245
摘要： A heating process is performed in a nitrogen atmosphere at a temperature of not less than 1650° C. upon an epitaxial substrate including a single crystal base and an upper layer made of a group-III nitride crystal and epitaxially formed on a main surface of the single crystal base. The result shows that the heating process reduces the number of pits in a top surface to produce the effect of improving the surface flatness of the group-III nitride crystal. The result also shows that the dislocation density in the group-III nitride crystal is reduced to not more than one-half the dislocation density obtained before the heat treatment.
摘要翻译：在氮气气氛中，在包含单晶基底和由III族氮化物晶体构成的上层的外延基板上，在不低于1650℃的温度下进行加热处理，外延形成在单晶底座。结果表明，加热过程减少顶表面中的凹坑的数量，以产生提高III族氮化物晶体的表面平坦度的效果。结果还表明，III族氮化物晶体中的位错密度降低到不超过热处理前获得的位错密度的一半。

5. 发明授权

US06844611B2 III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal 有权
标题翻译： III族氮化物外延衬底，用于III族氮化物元素的外延衬底和III族氮化物元件，其包括形成在蓝宝石单晶的主表面上的表面氮化物层
公开(公告)号：US06844611B2
公开(公告)日：2005-01-18
申请号：US10247366
申请日：2002-09-20
申请人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/16 , H01L33/32 , H01L31/0304
CPC分类号： C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： The crystal orientation of the main surface of a sapphire single crystal base material to constitute an epitaxial substrate is inclined from the orientation (c-axis) preferably for the orientation (m-axis) by a range within 0.02-0.3 degrees. Then, a surface nitride layer is formed at the main surface of the base material. Then, a III nitride underfilm is formed on the main surface of the base material via the surface nitride layer. The III nitride underfilm includes at least Al element, and the full width at half maximum at (101-2) reflection in X-ray rocking curve of the III nitride underfilm is 2000 seconds. The surface roughness Ra within 5 μm area is 3.5 Å.
摘要翻译：用于构成外延基板的蓝宝石单晶基材的主表面的晶体取向优选从<0001>取向（c轴）向<1-100>取向（m轴）倾斜一个范围内 0.02-0.3度。然后，在基材的主表面上形成表面氮化物层。然后，通过表面氮化物层在基材的主表面上形成III族氮化物底膜。 III族氮化物底膜至少包括Al元素，并且III族氮化物底膜的X射线摇摆曲线中（101-2）反射处的半峰全宽为2000秒。 5um范围内的表面粗糙度Ra为3.5Å。

6. 发明授权

US06869702B2 Substrate for epitaxial growth 有权
标题翻译：用于外延生长的基板
公开(公告)号：US06869702B2
公开(公告)日：2005-03-22
申请号：US10738187
申请日：2003-12-17
申请人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： C30B25/02 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , B32B9/04
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , Y10T428/12528 , Y10T428/265
摘要： A substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is provided. A nitride film containing at least Al is formed on a 6H—SiC base by CVD at a temperature of at least 1100° C., for example. The substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is obtained by setting the dislocation density of the nitride film to not more than 1×1011/cm2, the full width at half maximum of an X-ray rocking curve for (002) plane to not more than 200 seconds and the full width at the half maximum of the X-ray rocking curve for (102) plane to not more than 1500 seconds.
摘要翻译：提供了用于外延生长的衬底，其能够形成具有高晶体质量的含Al的III族氮化物膜。至少含有Al的氮化物膜例如在至少1100℃的温度下通过CVD在6H-SiC基底上形成。通过将氮化物膜的位错密度设定为1×10 11 / cm 2以下，可以得到具有高结晶质量的含Al III族氮化物膜的外延生长用基板，全宽为半（002）平面的X射线摇摆曲线的最大值不大于200秒，（102）平面的X射线摇摆曲线半峰全宽不大于1500秒。

7. 发明授权

US06597023B2 Semiconductor light-detecting element 有权
公开(公告)号：US06597023B2
公开(公告)日：2003-07-22
申请号：US10147046
申请日：2002-05-17
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L31304
CPC分类号： H01L31/1852 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L31/0304 , H01L31/105 , H01L33/007 , Y02E10/544
摘要： A semiconductor light-detecting element includes a given substrate, an underlayer and a light-detecting element structure which are formed on said substrate in turn. The underlayer is made of a nitride semiconductor including Al element with a dislocation density of 1011/cm2 or below. The light-detecting element structure is made of a nitride semiconductor layer group including Al element at a larger content than the nitride semiconductor making the underlayer with a dislocation density of 1010/cm2 or below.

8. 发明授权

US06805982B2 Epitaxial substrates and semiconductor devices 有权
标题翻译：外延基板和半导体器件
公开(公告)号：US06805982B2
公开(公告)日：2004-10-19
申请号：US10425734
申请日：2003-04-30
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： B32B900
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/08 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L29/2003 , Y10T428/265
摘要： A group III nitride film is formed on an epitaxial substrate having an underlayer film containing Al. According to the present invention, the change of the properties of the II nitride film may be reduced The properties of the semiconductor device may be thus reduced and the production yield may be improved. An underlayer 2 made of a group III nitride containing at least Al is formed on a substrate 1 made of a single crystal. An oxide film 3 is formed on the underlayer film 2 to produce an epitaxial substrate 10. The oxygen content of the oxide film 3 at the surface is not lower than 3 atomic percent and the thickness is not larger than 50 angstrom.
摘要翻译：在具有含有Al的下层膜的外延基板上形成III族氮化物膜。根据本发明，可以降低II族氮化物膜的性能的变化。因此，可以降低半导体器件的性能，并且可以提高生产成品率。在由单晶构成的基板1上形成由至少含有Al的III族氮化物构成的底层2。在下层膜2上形成氧化膜3，制作外延衬底10.表面氧化膜3的氧含量不低于3原子％，厚度不大于50埃。

9. 发明授权

US06765244B2 III nitride film and a III nitride multilayer 有权
标题翻译： III族氮化物膜和III族氮化物多层膜
公开(公告)号：US06765244B2
公开(公告)日：2004-07-20
申请号：US10156595
申请日：2002-05-28
申请人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： H01L310328
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L31/1852 , H01L33/32 , Y02E10/544
摘要： A III nitride multilayer including a given substrate, a III nitride underfilm including an Al content of 50 atomic percent or more for all of the III elements present in the III nitride underfilm, and a III nitride film including a lower Al content than the Al content of the III nitride underfilm by 10 atomic percent or more. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 800 seconds or below at the (100) plane. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 200 seconds or below at the (002) plane.
摘要翻译：包含给定衬底的III族氮化物层，包含III族氮化物底膜中存在的所有III族元素的Al含量为50原子％以上的III族氮化物底膜，以及包含比Al含量低的Al含量的III族氮化物膜的III族氮化物底膜减少10原子％以上。 III型氮化物膜的半高X射线摇摆曲线的全宽在（100）平面处设定为800秒以下。 III族氮化物膜的半高X射线摇摆曲线值的全宽在（002）面设定为200秒以下。

10. 发明申请

US20080242060A1 METHOD FOR FORMING AlGaN CRYSTAL LAYER 有权
标题翻译：形成AlGaN晶体层的方法
公开(公告)号：US20080242060A1
公开(公告)日：2008-10-02
申请号：US12051168
申请日：2008-03-19
申请人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
发明人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254
摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.
摘要翻译：提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩获得了基本原子水平的表面层平坦的应力。通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括：沉积包含由组成式Al x x表示的III族氮化物的第一单元层的交替层，（0≤x≤1）的第一单元层和由组成式Al Y y表示的III族氮化物的第二单位层 1-y N（0 <= y <= 1和y

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