专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07632741B2 Method for forming AlGaN crystal layer 失效
标题翻译：形成AlGaN晶体层的方法
公开(公告)号：US07632741B2
公开(公告)日：2009-12-15
申请号：US12051138
申请日：2008-03-19
申请人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
发明人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254
摘要： There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.
摘要翻译：提供了具有优异的表面平坦度的制备AlGaN晶体层的方法。在具有表面层的模板基板上形成有效应力松弛的缓冲层，该表面层基本上是原子水平的平面并且施加面内的压缩应力，并且在缓冲层上形成AlGaN层， AlGaN层可以形成为基本上原子水平的平坦。特别是当模板衬底的表面层包括第一AlN层时，可以在600℃或更低的温度下在其上形成第二AlN层，而在TMG / TMA混合中提供TMA和TMG的混合气体比例为3/17以上至6/17以下，可以优选形成有效应力松弛的缓冲层。

2. 发明申请

US20080242060A1 METHOD FOR FORMING AlGaN CRYSTAL LAYER 有权
标题翻译：形成AlGaN晶体层的方法
公开(公告)号：US20080242060A1
公开(公告)日：2008-10-02
申请号：US12051168
申请日：2008-03-19
申请人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
发明人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254
摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.
摘要翻译：提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩获得了基本原子水平的表面层平坦的应力。通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括：沉积包含由组成式Al x x表示的III族氮化物的第一单元层的交替层，（0≤x≤1）的第一单元层和由组成式Al Y y表示的III族氮化物的第二单位层 1-y N（0 <= y <= 1和y

3. 发明申请

US20080233721A1 METHOD FOR FORMING AlGaN CRYSTAL LAYER 失效
标题翻译：形成AlGaN晶体层的方法
公开(公告)号：US20080233721A1
公开(公告)日：2008-09-25
申请号：US12051138
申请日：2008-03-19
申请人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
发明人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254
摘要： There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.
摘要翻译：提供了具有优异的表面平坦度的制备AlGaN晶体层的方法。在具有表面层的模板基板上形成有效应力松弛的缓冲层，该表面层基本上是原子水平的平面并且施加面内的压缩应力，并且在缓冲层上形成AlGaN层， AlGaN层可以形成为基本上原子水平的平坦。特别是当模板衬底的表面层包括第一AlN层时，可以在600℃或更低的温度下在其上形成第二AlN层，而在TMG / TMA混合中提供TMA和TMG的混合气体比例为3/17以上至6/17以下，可以优选形成有效应力松弛的缓冲层。

4. 发明授权

US07713847B2 Method for forming AlGaN crystal layer 有权
标题翻译：形成AlGaN晶体层的方法
公开(公告)号：US07713847B2
公开(公告)日：2010-05-11
申请号：US12051168
申请日：2008-03-19
申请人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
发明人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254
摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.
摘要翻译：提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩获得了基本原子水平的表面层平坦的应力。通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括沉积包含由组成式Al x Ga 1-x N（0＆nl E; x＆nlE）表示的III族氮化物的第一单元层的交替层 ; 1）和包含由组成式AlyGa1-yN（0＆amp; nlE; y＆nlE; 1和y≠x）表示的III族氮化物的第二单元层，使得AlGaN层具有超晶格结构。

5. 发明授权

US08931875B2 Inkjet printing apparatus and inkjet printing method 有权
标题翻译：喷墨打印设备和喷墨打印方法
公开(公告)号：US08931875B2
公开(公告)日：2015-01-13
申请号：US13618467
申请日：2012-09-14
申请人： Kei Kosaka , Minoru Teshigawara , Atsushi Sakamoto , Takeshi Murase , Yoshiyuki Honda
发明人： Kei Kosaka , Minoru Teshigawara , Atsushi Sakamoto , Takeshi Murase , Yoshiyuki Honda
IPC分类号： B41J2/05
CPC分类号： B41J2/04528 , B41J2/0454 , B41J2/04563 , B41J2/0458 , B41J2/04588 , B41J2/04591 , B41J2/04598 , B41J11/002
摘要： There is provided an inkjet printing apparatus which can output a stable image without density unevenness by performing appropriate drive control to print elements based upon an appropriate representative temperature of a chip whatever image data is printed on a print medium. For this purpose, detection temperatures of a plurality of temperature sensors are lined up in high temperature order, and coefficients by which the respective detection temperatures are multiplied, are determined to be associated with that order at the lining-up, determining a representative temperature by the weighted average method. The common drive pulse associated with to the individual chip based upon the representative temperature thus obtained, to be applied thereto. Thereby even if temperature variations of print elements on the chip exist, it is possible to appropriately control the entire chip in temperature.
摘要翻译：提供了一种喷墨打印设备，其可以通过基于芯片的适当的代表性温度执行适当的驱动控制来输出稳定的图像而不产生浓度不均匀，而不管图像数据被打印在打印介质上。为此，多个温度传感器的检测温度以高温顺序排列，并且相应检测温度相乘的系数被确定为与排列相关的那个顺序相关联，通过以下方式确定代表温度：加权平均法。基于由此获得的代表性温度与单个芯片相关联的公共驱动脉冲，以应用于该芯片。因此，即使存在芯片上的打印元件的温度变化，也可以适当地控制整个芯片的温度。

6. 发明申请

US20110283775A1 GAS CONCENTRATION DETECTION SENSOR 有权
标题翻译：气体浓度检测传感器
公开(公告)号：US20110283775A1
公开(公告)日：2011-11-24
申请号：US13109352
申请日：2011-05-17
申请人： Takayuki Sekiya , Kei Kosaka , Shodai Hirata
发明人： Takayuki Sekiya , Kei Kosaka , Shodai Hirata
IPC分类号： G01N33/00
CPC分类号： G01N27/4077
摘要： First outer gas apertures 144a are arranged in a first corner 144b such that the outer opening plane of each first outer gas aperture 144a forms an angle of 45 degrees with a bottom face of a step element 145 and the outer opening plane forms an angle of 90 degrees with an inner circumferential face of the first outer gas aperture 144a. Second outer gas apertures are arranged in a second corner 146b such that the outer opening plane of each second outer gas aperture 146a forms an angle of 45 degrees with a bottom face of an edge section 146 and the outer opening plane forms an angle of 90 degrees with an inner circumferential face of the second outer gas aperture 146a. This structure prevents water from adhering to a sensor element 110 and thereby enhances the response of a gas sensor 110.
摘要翻译：第一外部气体孔144a布置在第一角144b中，使得每个第一外部气体孔144a的外部开口面与台阶元件145的底面形成45度的角度，并且外部开口平面形成90度的角度具有第一外部气体孔径144a的内圆周面。第二外部气体孔布置在第二角部146b中，使得每个第二外部气体孔146a的外部开口平面与边缘部分146的底面形成45度的角度，并且外部开口平面形成90度的角度具有第二外部气体孔146a的内周面。这种结构防止水粘附到传感器元件110，从而增强气体传感器110的响应。

7. 发明申请

US20110126610A1 Gas concentration detection sensor 有权
标题翻译：气体浓度检测传感器
公开(公告)号：US20110126610A1
公开(公告)日：2011-06-02
申请号：US12927886
申请日：2010-11-29
申请人： Takayuki Sekiya , Kei Kosaka , Sang Jae Lee
发明人： Takayuki Sekiya , Kei Kosaka , Sang Jae Lee
IPC分类号： G01N25/00
CPC分类号： G01N27/4077
摘要： A flow path from outer gas introduction apertures 144a to inner gas introduction apertures 134a has a narrower-width flow passage formed by an inner wall member 150. This structure effectively lowers the probability that a liquid, such as water, entering from the outer gas introduction apertures 144a passes through a gas inflow chamber 122 and reaches a sensor element 110, compared with a structure without the inner wall member 150. The inner wall member 150 is formed as a solid member that is capable of storing the surrounding heat. Even if there is a certain event that has the potential of causing a temperature decrease of the sensor element 110, for example, an abrupt change in flow rate of an object gas, the heat stored in the inner wall member 150 effectively prevents a temperature decrease of the sensor element 110. This structure prevents the occurrence of cracking in the sensor element 110, compared with a conventional sensor structure having a double-layered protective cover.
摘要翻译：从外部气体引入孔144a到内部气体导入孔134a的流路具有由内壁构件150形成的较窄宽度的流路。该结构有效地降低了从外部气体导入口与没有内壁构件150的结构相比，孔144a穿过气体流入室122并到达传感器元件110.内壁构件150形成为能够存储周围热量的实心构件。即使存在导致传感器元件110的温度降低的可能性的某些事件，例如，目标气体的流量的突然变化，存储在内壁部件150中的热也有效地防止了温度降低与具有双层保护罩的常规传感器结构相比，该结构防止了传感器元件110中的裂纹的发生。

8. 发明授权

US08727477B2 Ink-jet printing apparatus and ink stain detection method in the same 有权
标题翻译：喷墨打印设备和墨渍检测方法相同
公开(公告)号：US08727477B2
公开(公告)日：2014-05-20
申请号：US13524214
申请日：2012-06-15
申请人： Kei Kosaka , Yoshiaki Murayama , Satoshi Azuma , Makoto Torigoe
发明人： Kei Kosaka , Yoshiaki Murayama , Satoshi Azuma , Makoto Torigoe
IPC分类号： B41J29/393
CPC分类号： B41J11/0095 , B41J29/17
摘要： An apparatus includes a printing unit configured to eject ink from a print head onto a sheet conveyed in a direction to perform printing on the sheet; a conveying unit configured to be provided on a downstream side of the print head in the direction, and configured to include a rotating member in contact with the sheet; and a reading unit configured to read a surface of the sheet on a downstream side of the rotating member in the direction, in which information on ink adhesion to the rotating member is obtained based on a result read by the reading unit.
摘要翻译：一种设备包括：打印单元，其被配置为将墨从打印头喷射到在纸张上执行打印方向传送的纸张上; 输送单元，其构造成沿所述方向设置在所述打印头的下游侧，并且构造成包括与所述片材接触的旋转构件; 以及读取单元，被配置为基于由读取单元读取的结果，沿着旋转构件的油墨粘附的信息的方向读取旋转构件的下游侧的薄片的表面。

9. 发明申请

US20110316910A1 IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD 有权
标题翻译：图像处理装置和图像处理方法
公开(公告)号：US20110316910A1
公开(公告)日：2011-12-29
申请号：US12960425
申请日：2010-12-03
申请人： Satoshi Azuma , Yoshiaki Murayama , Kei Kosaka
发明人： Satoshi Azuma , Yoshiaki Murayama , Kei Kosaka
IPC分类号： B41J29/38
CPC分类号： B41J29/393 , B41J2/2146 , B41J29/38 , G06K15/107 , G06K15/1898 , G06K2215/111 , H04N1/12 , H04N1/1903 , H04N1/1934
摘要： When distributing image data of a plurality of planes to a first chip and a second chip that constitute the same overlapped portion of a connected head, a distribution method is changed for at least a part of the plurality of planes.
摘要翻译：当将多个平面的图像数据分配到构成连接头的相同重叠部分的第一芯片和第二芯片时，对于多个平面的至少一部分改变分布方法。

10. 发明申请

US20110283774A1 GAS CONCENTRATION DETECTION SENSOR 有权
标题翻译：气体浓度检测传感器
公开(公告)号：US20110283774A1
公开(公告)日：2011-11-24
申请号：US13109374
申请日：2011-05-17
申请人： Takayuki SEKIYA , Kei Kosaka , Shodai Hirata
发明人： Takayuki SEKIYA , Kei Kosaka , Shodai Hirata
IPC分类号： G01N9/00
CPC分类号： G01N27/4077
摘要： The sensor element 110, which can detect the concentration of a specified gas, is held with a housing 102 with a front end thereof exposed. A protective cover 120 includes an inner cover 130 and an outer cover 140, and secured to the housing 102. A ratio φ1/φ2 is set to a range from 0.6 to 0.9, where φ1 represents an outer diameter of a portion where an inner gas aperture 134a is formed in the inner cover 130, and φ2 represents an inner diameter of a portion where an outer gas aperture 144a is formed in the outer cover 140.
摘要翻译：可以检测到特定气体的浓度的传感器元件110与其前端暴露的壳体102一起保持。保护盖120包括内盖130和外盖140，并且固定到壳体102上。比例1和2被设定在0.6到0.9的范围内，其中＆lt; 1＆在内盖130中形成有内部气体孔134a的部分，而表示在外盖140中形成有外部气体孔144a的部分的内径。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式