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    • 6. 发明授权
    • Voltage controlled oscillator
    • 压控振荡器
    • US06710669B2
    • 2004-03-23
    • US10134897
    • 2002-04-29
    • Eiichi HasegawaKazuhisa Oyama
    • Eiichi HasegawaKazuhisa Oyama
    • H03B100
    • H03B5/06H03B2201/0208H03B2201/025
    • To provide a voltage controlled oscillator having a large variable width of oscillation frequency while ensuring oscillation starting performance, a P-channel MOS transistor Tr is made ON by detecting that an oscillation signal is provided with a predetermined amplitude value and oscillating operation is shifted from an initial state to a steady state by a detecting circuit OPC and a capacitor CA is connected in series with a series circuit constituted by a crystal resonator XL and a varicap diode CV. In the initial state, a load capacitance is reduced to thereby cancel an amount of reducing conductance gm of an oscillation amplifying portion to correspond to operation of the crystal resonator by a low amplitude and negative resistance necessary for maintaining excellent oscillation starting performance is provided and in the steady state, a width of changing the oscillation frequency is enlarged by enhancing an effect of the varicap diode CV.
    • 为了提供振荡频率可变宽度大的压控振荡器,同时确保振荡起动性能,通过检测到振荡信号被设置有预定的振幅值,使P沟道MOS晶体管Tr成为导通,并且振荡操作从 由检测电路OPC和电容器CA的初始状态稳定状态与由晶体谐振器XL和变容二极管CV构成的串联电路串联连接。 在初始状态下,减小负载电容从而抵消振荡放大部分的电导率gm的减小量,以便与振荡放电部分的运行相对应,并且保持优异的振荡开始性能所需的低振幅和负电阻,并且在 通过增加变容二极管CV的影响,稳定状态,改变振荡频率的宽度被扩大。
    • 7. 发明授权
    • Oscillation control circuit
    • 振荡控制电路
    • US06690245B2
    • 2004-02-10
    • US09997709
    • 2001-11-29
    • Eiichi HasegawaKazuhisa OyamaMasahisa Kimura
    • Eiichi HasegawaKazuhisa OyamaMasahisa Kimura
    • H03B532
    • H03K3/0307H03B5/36H03K3/014
    • An oscillation control circuit is offered which can improve the startability of an oscillator circuit operating at high frequencies and at a low power-supply voltage. When the oscillation potential of the oscillation signal is between the inversion potential (1.2 volts) of a CMOS inverter IV1 and the inversion potential (1.8 volts) of a CMOS inverter IV2, the logical output value of a CMOS Schmitt inverter SI1 is 1. The output of a CMOS inverter formed by MOS transistors T32 and T33 is shorted out via a MOS transistor T34. Its logical output value is kept at 1. When the inversion potential of the CMOS inverter IV1 or the inversion potential of the CMOS inverter IV2 is exceeded, if the input voltage to the CMOS Schmitt trigger SI1 increases above its inversion potential (1.8 volts), the logical output value assumes a value of 0. The CMOS inverter formed by the MOS transistors T12 and T13 is first set into operation. The oscillation signal is inverted, setting a circuit LA at a later stage into operation.
    • 提供了一种可以提高在高频和低电源电压下工作的振荡电路的启动性的振荡控制电路。 当振荡信号的振荡电位在CMOS反相器IV1的反转电位(1.2伏特)和CMOS反相器IV2的反相电位(1.8伏特)之间时,CMOS施密特反相器SI1的逻辑输出值为1. 由MOS晶体管T32和T33形成的CMOS反相器的输出通过MOS晶体管T34短路。 其逻辑输出值保持为1.当CMOS反相器IV1的反相电位或CMOS反相器IV2的反相电位超过时,如果CMOS施密特触发器SI1的输入电压高于其反转电位(1.8伏), 逻辑输出值为0.由MOS晶体管T12,T13构成的CMOS反相器首先被设定为工作。 振荡信号反转,将电路LA置于后期。