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    • 1. 发明授权
    • Cleaning solution and cleaning method
    • 清洗液和清洗方法
    • US5985811A
    • 1999-11-16
    • US780502
    • 1997-01-08
    • Toda MasayukiTadahiro OhmiYasuyuki Harada
    • Toda MasayukiTadahiro OhmiYasuyuki Harada
    • B08B3/10A61B19/00B08B3/12C11D3/39C11D7/00C11D11/00H01L21/304B08B3/04
    • C11D3/3947B08B3/12C11D11/0047C11D11/007A61B90/70
    • A cleaning solution and cleaning method are provided which: (1) make treatment at room temperature possible, and do not require heating, (2) use little chemicals and water, (3) do not require specialized apparatuses, and moreover, (4) do not require the use of specialized chemicals. The cleaning solution of the present invention comprises pure water containing 20 ppb-100 ppb of oxygen and 2 ppb or more of nitrogen. Furthermore, the cleaning solution may comprise electrolytically ionized water containing OH.sup.- and containing 20 ppb-100 ppb of oxygen. In the cleaning method of the present invention, the cleaning of a material to be cleaned is conducted in a cleaning solution comprising pure water containing 20 ppb-100 ppb of oxygen and 2 ppb-15 ppm of nitrogen, while applying ultrasound having a frequency of 30 kHz or more. Furthermore, in the cleaning method of the present invention, the cleaning of a material to be cleaned may be conducted in a cleaning solution comprising electrolytically ionized water containing OH.sup.- and containing 20 ppb-100 ppb of oxygen, while applying ultrasound having a frequency of 30 kHz or more.
    • 提供清洗方法和清洗方法:(1)在室温下进行处理,不需要加热,(2)少量使用化学品和水,(3)不需要专门的设备,而且(4) 不需要使用专门的化学品。 本发明的清洗液含有20ppb-100ppb的氧和2ppb以上的氮的纯水。 此外,清洁溶液可以包含含有OH-并且含有20ppb-100ppb氧的电解电离水。 在本发明的清洗方法中,要清洗的材料在包含20ppb-100ppb氧气和2ppb-15ppm氮气的纯水的清洁溶液中进行,同时施加频率为 30 kHz以上。 此外,在本发明的清洗方法中,清洗材料可以在含有OH-并含有20ppb-100ppb的氧的电解离子水的清洗溶液中进行,同时施加频率为 30 kHz以上。
    • 2. 发明授权
    • Washing apparatus and washing method
    • 洗衣机和洗涤方法
    • US06325081B1
    • 2001-12-04
    • US09214240
    • 1999-05-17
    • Nobuhiro MikiTakahisa NittaYasuyuki HaradaTadahiro Ohmi
    • Nobuhiro MikiTakahisa NittaYasuyuki HaradaTadahiro Ohmi
    • B08B302
    • H01L21/02052B08B3/02B08B2203/0288H01L21/67051
    • A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.5 MHz or more on the substrate through the cleaning liquid, and means for rotating the substrate or means for moving either of the substrate and the cleaning liquid supplying means in one direction, whereby injection of the undiluted solution or undiluted gas into the ultrapure water channel is controlled to continuously perform washing of the substrate by the cleaning liquid and washing by the ultrapure water.
    • 一种洗涤装置和洗涤方法,其进一步改善洗涤效果并且能够用少量化学品进行高度清洁的洗涤。 另外,本发明的目的是提供一种高产量的洗涤装置,涉及快速切换各种高度责任的化学品,能够高速地进行一系列洗涤操作。洗涤装置包括未稀释的清洗液注入装置, 将未稀释的溶液或清洁液体的未稀释气体输送到超纯水通道中以制备所需浓度的清洗液体,连接到超级软化水通道的清洗液供应装置,用于同时向基材的前表面和后表面提供清洁液体 调节到期望浓度或超纯水的装置,用于通过清洁液体在衬底上叠加超声波或0.5MHz以上的高频声波的装置,以及用于旋转衬底或用于移动衬底和清洁装置的装置的装置 液体供应装置在一个方向上,由此注射未稀释的 控制溶液或未稀释气体进入超纯水通道,以通过清洗液体连续地进行基材清洗,并通过超纯水进行洗涤。
    • 3. 发明授权
    • Apparatus and method for cleaning a precision substrate
    • 用于清洁精密基板的装置和方法
    • US6050276A
    • 2000-04-18
    • US22432
    • 1998-02-12
    • Yasuyuki HaradaMitsuru NakadaTadahiro Ohmi
    • Yasuyuki HaradaMitsuru NakadaTadahiro Ohmi
    • B08B3/02B08B3/10B08B3/12G11B23/50H01L21/00H01L21/304B08B3/00
    • H01L21/67051B08B3/02G11B23/505B08B2203/0288
    • There are disclosed an apparatus and method for cleaning a precision substrate through use of high-frequency- or ultrasonic-applied cleaning liquid. An object substrate is horizontally held and rotated. High-frequency- or ultrasonic-applied cleaning liquid is jetted toward the surface of the object substrate from first cleaning liquid jetting unit disposed above the object substrate, and the nozzle of the first cleaning liquid jetting unit is moved in parallel with the surface of the object substrate. Cleaning liquid is also fed toward the central portion of the surface of the object substrate from cleaning liquid feed-to-center unit during cleaning. In the cleaning apparatus and method, a sufficiently high cleaning speed is attained. Further, there is not involved the problem that the film of cleaning liquid becomes thin on the central portion of a substrate during cleaning due to the effect of a centrifugal force with a resultant difficulty in transmission of high frequency or ultrasonic vibration to the central portion and the problem that during cleaning, due to the effect of a centrifugal force, no liquid film is present on the central portion, which thus becomes dry and contaminated. The cleaning apparatus and method also proves a cost advantage.
    • 公开了一种通过使用高频或超声波清洗液来清洁精密基板的装置和方法。 物体基板水平保持旋转。 从设置在物体基板上方的第一清洗液喷射单元向对象基板的表面喷射高频或超声波清洗液,第一清洗液喷射单元的喷嘴平行于 物体衬底。 在清洁期间,清洁液体也从清洁液体供给到中心单元朝向物体基板的表面的中心部分供给。 在清洁装置和方法中,达到足够高的清洁速度。 此外,不存在由于离心力的影响而导致的清洗液的中​​心部位的清洗液的薄膜变薄的问题,导致难以将高频或超声波振动传递到中心部分, 在清洗过程中,由于离心力的作用,在中心部分没有液膜存在,因此变得干燥和污染。 清洁装置和方法也证明了成本优势。
    • 5. 发明授权
    • Apparatus and method for cleaning semiconductor wafers
    • 用于清洁半导体晶片的装置和方法
    • US5725753A
    • 1998-03-10
    • US638233
    • 1996-04-26
    • Yasuyuki HaradaShigeyoshi Netsu
    • Yasuyuki HaradaShigeyoshi Netsu
    • B08B3/10C02F1/36C02F1/461H01L21/00H01L21/304H01L21/306
    • H01L21/02052B08B3/10C02F1/4618H01L21/67057C02F1/36C02F2001/4619C02F2201/4611C02F2201/46115C02F2201/46195
    • An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity. The apparatus used therefor comprises a rectangular vessel divided into a central cathode compartment, in which the wafers are held in a vertical disposition within an up-flow of pure water, and a pair of anode compartments by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which a cathode plate and anode plate are bonded.
    • 在半导体硅晶片的清洗处理中提出了一种改进,其中用碱性水溶液进行清洁的常规步骤被用临时碱性纯水清洗处理代替,所述临时碱性纯水通过在 结合到氢离子交换膜的表面的阴极和阳极,使得碱性清洁处理可以在温和条件下进行,以消除由于形成常规方法中不可避免的COP的麻烦。 此外,在转移到后续的酸性清洁步骤之前,在晶片的碱清洗之后的纯水冲洗可以被省略,以极大地有助于提高生产率。 所使用的装置包括分成中央阴极室的矩形容器,其中晶片在纯水的上升流中保持垂直布置,并且一对阳极室通过用一对氢离子交换 膜,其两侧粘合阴极板和阳极板。