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1. 发明申请

US20050045207A1 Chemical supply system 失效
标题翻译：化学供应系统
公开(公告)号：US20050045207A1
公开(公告)日：2005-03-03
申请号：US10849836
申请日：2004-05-21
申请人： Takahisa Nitta , Nobuhiro Miki , Yoshiaki Yamaguchi
发明人： Takahisa Nitta , Nobuhiro Miki , Yoshiaki Yamaguchi
IPC分类号： H01L21/304 , B01F5/04 , B01F5/12 , B01F15/02 , B01F15/04 , B01J4/02 , F04B13/02 , F04B43/00 , F04B43/02 , F04B43/04 , F04F7/00 , F16K7/12 , G05D11/13 , B08B3/02
CPC分类号： B01F15/042 , B01F5/0471 , B01F5/0475 , B01F15/0203 , B01F15/024 , B01F15/0244 , B01F2215/0096 , F04B43/0054 , F04B43/02 , F04B43/046 , F04F7/00 , F16K7/123 , G05D11/138 , H01L21/67051
摘要： A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.
摘要翻译：作为主要要素的化学品供给系统包括：化学品储罐，其中用于清洗的液体化学品以其配制的浓缩物的状态储存;化学品供应装置，连接到化学品储存罐用于积极地进行化学品供应;管道系统连接到化学物质供给装置，形成作为液体化学品混合的超纯水通道的供给流路，配置在管道系统的端部的一对排出喷嘴，以与晶片的表面相对设置在清洁室中以将清洁液体供应到表面上。因此，旨在使包含化学池的清洗液供给系统显着的小型化/简化，可以容易且快速地将化学浓度精确化合并提供清洁液，并且在清洁中产生和混合液体，被压制到肢体。

2. 发明授权

US06728745B1 Semiconductor circuit for arithmetic operation and method of arithmetic operation 失效
标题翻译：用于算术运算的半导体电路和算术运算方法
公开(公告)号：US06728745B1
公开(公告)日：2004-04-27
申请号：US09581729
申请日：2000-09-06
申请人： Tadahiro Ohmi , Makoto Imai , Toshiyuki Nozawa , Masanori Fujibayashi , Koji Kotani , Tadashi Shibata , Takahisa Nitta
发明人： Tadahiro Ohmi , Makoto Imai , Toshiyuki Nozawa , Masanori Fujibayashi , Koji Kotani , Tadashi Shibata , Takahisa Nitta
IPC分类号： G06F750
CPC分类号： G06F7/4824 , G06F7/506
摘要： There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders 1-3) for outputting carry data representing this carry, and delay means (memory 4) for delaying the computation result from the computation circuit by one computation time unit, are provided.
摘要翻译：提供了一种用于算术处理的半导体电路和运算处理方法，其可以通过抑制浪费处理来增加处理数据的速率并减小电路的面积。提供了一种用于在计算时间单元内计算输入数据的计算单元，并且输出表示通过计算得到的结果的计算结果，并且如果在计算中产生进位，则用于输出进位数据的计算电路（加法器1-3）并且提供用于将来自计算电路的计算结果延迟一个计算时间单位的延迟装置（存储器4）。

3. 发明授权

US06630031B1 Surface purification apparatus and surface purification method 失效
标题翻译：表面净化装置和表面净化方法
公开(公告)号：US06630031B1
公开(公告)日：2003-10-07
申请号：US09417009
申请日：1999-10-12
申请人： Nobuhiro Miki , Takahisa Nitta
发明人： Nobuhiro Miki , Takahisa Nitta
IPC分类号： B08B702
CPC分类号： H01L21/67051 , B08B3/00 , B08B7/0057 , B08B2230/01 , Y10S134/902 , Y10S438/906
摘要： By a simple apparatus construction and process, it is made possible to “clean precisely” a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012 molecules/cm2 or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 105 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.
摘要翻译：通过简单的装置结构和工艺，能够以分子/原子水平“精确地”清洁表面，并且精细加工的表面的净化度为10分/厘米2以下。蒸汽喷嘴被设置为使得线狭缝喷嘴处于直径方向，并且含雾蒸汽喷射到基板的表面上。由此，蒸气喷射表面中的颗粒（通过在10 5℃下将基材浸渍在含有聚苯乙烯（粒径0.6μm）或氧化铝（粒径为0.3μm〜0.5μm）的颗粒的溶液中而使颗粒粘附。颗粒/毫升）在喷雾十秒后除去约90％至95％，并且在二十秒喷雾之后除去99％或更多，即小于晶片检查装置的检测限。

4. 发明授权

US06612898B1 Method for forming oxidation-passive layer, fluid-contacting part, and fluid feed/discharge system 失效
标题翻译：用于形成氧化钝化层，流体接触部分和流体进给/排出系统的方法
公开(公告)号：US06612898B1
公开(公告)日：2003-09-02
申请号：US09202105
申请日：1999-05-14
申请人： Tadahiro Ohmi , Takahisa Nitta
发明人： Tadahiro Ohmi , Takahisa Nitta
IPC分类号： C23C810
CPC分类号： C23C8/16 , C23C8/12 , C23C8/14 , C23C8/18 , Y10T428/1259
摘要： A method for forming an oxidation-passive layer having high corrosion resistance to highly oxidizing materials such as ozone; a stainless steel and a titanium base alloy having corrosion resistance to an ozone containing fluid; and a fluid containing part, a process apparatus, and a fluid feed/discharge system made by using the same. The method comprises the steps of heat-treating the surface of a stainless steel or titanium-base alloy having an Al content of 0.5 percent by weight to 7 percent by weight either at 300° C. to 700° C. in a mixed gas atmosphere composed of an inert gas and 500 ppb to 1 percent H2O gas or 1 ppm to 500 ppm oxygen gas, or alternatively at 20° C. to 300° C. in a mixed gas atmosphere composed of an oxygen gas and at least 100 ppm ozone gas to form an oxidation-passive layer containing an aluminum oxide or a titanium oxide.
摘要翻译：一种形成对氧化物质如臭氧具有高耐腐蚀性的氧化钝化层的方法; 对含有臭氧的流体具有耐腐蚀性的不锈钢和钛基合金; 流体容纳部，处理装置以及使用该液体的流体供给/排出系统。该方法包括以下步骤：在混合气体气氛中在300℃至700℃下对Al含量为0.5重量％至7重量％的不锈钢或钛基合金的表面进行热处理由惰性气体和500ppb至1％H 2 O气体或1ppm至500ppm氧气组成，或者在由氧气和至少100ppm臭氧组成的混合气体气氛中在20℃至300℃ 气体形成含有氧化铝或氧化钛的氧化钝化层。

5. 发明授权

US06610168B1 Resist film removal apparatus and resist film removal method 有权
标题翻译：抗蚀膜去除装置和抗蚀膜去除方法
公开(公告)号：US06610168B1
公开(公告)日：2003-08-26
申请号：US09636821
申请日：2000-08-14
申请人： Nobuhiro Miki , Takahisa Nitta
发明人： Nobuhiro Miki , Takahisa Nitta
IPC分类号： B08B500
CPC分类号： H01L21/6715 , B08B3/00 , B08B3/02 , B08B7/0057 , B08B2203/0288 , B08B2230/01 , G03F7/422 , G03F7/427 , Y10T156/11 , Y10T156/1116 , Y10T156/1121
摘要： A line slit nozzle for spraying steam is disposed along a diameter of a resist film. Steam containing a mist is sprayed onto a surface of the resist film. The film is thereby peeled off and removed. By using a change in physical properties (swelling, etc.) of the resist film by water, the film is easily and surely peeled off. Breakaway from much resources/energy consumption type techniques is realized. In other words, realized are environment-symbiosis type techniques by which resist films can be removed independently of the quantity of energy and kinds of chemical solvents.
摘要翻译：沿着抗蚀剂膜的直径设置用于喷射蒸汽的线狭缝喷嘴。含有雾的蒸汽喷涂在抗蚀膜的表面上。由此剥离和除去膜。通过使用水的抗蚀剂膜的物理性质（溶胀等）的变化，膜容易且可靠地剥离。实现了大量资源/能源消耗类型技术的分离。换句话说，实现了环境共生型技术，通过其可以独立于能量和化学溶剂的种类去除抗蚀剂膜。

6. 发明授权

US06563072B1 Welding technique for forming passive chromium oxide film in weld and gas feed system for welding 有权
标题翻译：焊接和焊接进气系统中形成无源氧化铬膜的焊接技术
公开(公告)号：US06563072B1
公开(公告)日：2003-05-13
申请号：US09509707
申请日：2000-06-08
申请人： Tadahiro Ohmi , Takahisa Nitta , Yasuyuki Shirai , Osamu Nakamura
发明人： Tadahiro Ohmi , Takahisa Nitta , Yasuyuki Shirai , Osamu Nakamura
IPC分类号： B23K3538
CPC分类号： B23K35/38 , B23K9/0026 , B23K9/16 , B23K35/383 , C23C8/10
摘要： Welding of material such as a piping using ferrite system stainless steel, in which a back sealed gas used for conventional welding is switched from argon gas (or a hydrogen gas/argon gas mix) to an argon gas to which an oxidizing gas is doped at the time of forming a chromium oxide passivation film. Welding conditions are set at the temperature in which the inner surface of the piping does not melt at the time of forming the chromium oxide passivation film. The temperature of the welding piping is set uniformly between welding conditions in conventional welding and welding conditions at the time of forming the chromium oxide passivation film, and in order to replace gases used with conventional welding with gases used at the time of forming the chromium oxide passivation film. A cycle of one round or more is performed under the welding conditions for forming a chromium oxide passivation film, thereby, to form the chromium oxide passivation film on a weld in concurrence with welding.
摘要翻译：将用于常规焊接的背面密封气体从氩气（或氢气/氩气混合物）切换到掺杂有氧化气体的氩气的铁氧体系不锈钢的管道的材料的焊接形成氧化铬钝化膜的时间。焊接条件设定为在形成氧化铬钝化膜时管道的内表面不熔化的温度。在形成氧化铬钝化膜时，焊接管道的温度在常规焊接和焊接条件的焊接条件之间均匀地设置，并且为了代替在形成氧化铬时使用的气体的常规焊接中使用的气体钝化膜。在形成氧化铬钝化膜的焊接条件下进行一圈以上的循环，由此在焊接上形成与焊接同时的氧化铬钝化膜。

7. 发明授权

US06533902B1 Ultraviolet processing apparatus and ultraviolet processing method 失效
公开(公告)号：US06533902B1
公开(公告)日：2003-03-18
申请号：US09817158
申请日：2001-03-27
申请人： Nobuhiro Miki , Takahisa Nitta
发明人： Nobuhiro Miki , Takahisa Nitta
IPC分类号： B08B300
CPC分类号： H01L21/67028 , A61L2/10 , A61L9/20 , B01J19/123 , C02F1/325 , C02F2103/04 , C02F2201/3228
摘要： An ultraviolet light reaction system is constructed for surface cleaning/surface processing, a processing speed and an apparatus size that can not be attained by any conventional chemical reaction system, are realized, and realization of a time-sharing performance/a high-throughput performance/a compact size is intended. Using an excimer ultraviolet lamp whose light source is excimer ultraviolet rays of a wavelength that transmissive distances to air, gas, and water are 2 mm or more, respectively, surface processing (such as a surface cleaning process) of a substrate disposed in a one-by-one substrate chamber is preformed.

8. 发明授权

US06436353B1 Gas recovering apparatus 失效
标题翻译：气体回收装置
公开(公告)号：US06436353B1
公开(公告)日：2002-08-20
申请号：US09096986
申请日：1998-06-12
申请人： Tadahiro Ohmi , Takahisa Nitta , Yasuyuki Shirai , Taiji Hashimoto , Kazuhide Ino
发明人： Tadahiro Ohmi , Takahisa Nitta , Yasuyuki Shirai , Taiji Hashimoto , Kazuhide Ino
IPC分类号： B01D5302
CPC分类号： B01D53/70 , B01D53/002 , B01D53/04 , B01D53/68 , B01D2257/502
摘要： The present invention makes possible the recycling of exhaust has components in a manufacturing process by cooling, liquefaction, and recovery, and to use toxic or useful gases without disposal, and to dramatically reduce the frequency of exhaust system maintenance by combining such a recovery method with a vacuum exhaust system.
摘要翻译：本发明使废气的再循环成为可以通过冷却，液化和回收的制造过程中的组分，并且不经处置地使用有毒或有用的气体，并且通过将这种回收方法与真空排气系统。

9. 发明授权

US06199092B1 Semiconductor arithmetic circuit 失效
标题翻译：半导体运算电路
公开(公告)号：US06199092B1
公开(公告)日：2001-03-06
申请号：US09158244
申请日：1998-09-22
申请人： Tadashi Shibata , Akira Nakada , Masahiro Konnda , Tadahiro Ohmi , Takahisa Nitta
发明人： Tadashi Shibata , Akira Nakada , Masahiro Konnda , Tadahiro Ohmi , Takahisa Nitta
IPC分类号： G06G700
CPC分类号： G06G7/14
摘要： A semiconductor arithmetic circuit including 2 MOS (Metal Oxide Semiconductor) type transistors, the source electrodes of which are connected to one another and having gate electrodes connected to a signal line having a predetermined potential via switching elements, and having at least two input electrodes capacitively coupled with the gate electrodes, wherein a first voltage and second voltage are applied to, respectively, a first and second input electrode of a first MOS transistor. An input signal voltage is applied to both a first and second input electrode of a second MOS transistor, and then a second switching element is caused to conduct, and the gate electrodes are set to the signal line potential, then the second switching element is isolated and the gate electrodes are placed in an electrically floating state. The first voltage and the second voltage are inputted into, respectively, the first and second input electrodes of the second MOS type transistor, and the input signal voltage is inputted into the first and second input electrodes of the first MOS transistor, and thereby, the absolute value of the difference between a voltage determined in accordance with the first voltage and the second voltage and a coupling capacity ratio between the first and the second input electrodes with respect to the gate electrode, and a voltage determined by the input signal voltage and the coupling capacity ratio is calculated.
摘要翻译：一种半导体运算电路，包括2个MOS（金属氧化物半导体）型晶体管，其源极彼此连接并且具有通过开关元件连接到具有预定电位的信号线的栅电极，并且具有至少两个输入电极电容与栅电极耦合，其中第一电压和第二电压分别施加到第一MOS晶体管的第一和第二输入电极。输入信号电压施加到第二MOS晶体管的第一和第二输入电极，然后使第二开关元件导通，并且将栅电极设置为信号线电位，然后隔离第二开关元件并且栅电极被置于电浮动状态。第一电压和第二电压分别输入到第二MOS型晶体管的第一和第二输入电极，并且输入信号电压被输入到第一MOS晶体管的第一和第二输入电极中，从而，根据第一电压和第二电压确定的电压与第一和第二输入电极之间的相对于栅电极的耦合容量比的差的绝对值，以及由输入信号电压和计算耦合容量比。

10. 发明授权

US06129098A Apparatus for injecting constant quantitative chemicals and a method thereof 有权
标题翻译：用于注射恒定定量化学品的装置及其方法
公开(公告)号：US06129098A
公开(公告)日：2000-10-10
申请号：US139500
申请日：1998-08-25
申请人： Nobuhiro Miki , Takahisa Nitta , Tadahiro Ohmi , Nobukazu Ikeda , Naofumi Yasumoto
发明人： Nobuhiro Miki , Takahisa Nitta , Tadahiro Ohmi , Nobukazu Ikeda , Naofumi Yasumoto
IPC分类号： B01J4/02 , B01F3/08 , C02F1/68 , F04B13/00 , F04B53/14 , H01L21/00 , H01L21/304 , B08B3/02
CPC分类号： H01L21/67051 , B01F15/00357 , B01F3/0865 , B01F3/088 , C02F1/686 , F04B13/00 , F04B53/141 , C02F2103/04
摘要： An apparatus for injecting constant quantitative chemicals which is capable of injecting a chemical solution into ultra pure water without generating particulate contamination, and furthermore, the injection interval of the chemical solution to the cleaning nozzle is controlled in units of seconds within a range of a few seconds to 10 or more seconds, and the switching of the type of chemical solution and the changeover to ultra pure water cleaning can be conducted in a short period of time of approximately 1 second.The apparatus includes a chemical solution injection system having a chemical solution retaining part for retaining the chemical solution, a control system for pressurization and depressurization for controlling the pressure of the chemical solution in the chemical solution retaining part at regular intervals, an injection control system which operates in concert with the control of the pressure of the chemical solution, and is structured so as to conduct the intermittent injection and instantaneous mixing function of the chemical solution from the chemical solution injection system to the ultra pure water flow path, and the injection stoppage function, and a chemical solution replenishment system which is structured so as to operate in concert with the control of the chemical solution and to be capable of replenishing the chemical solution in the chemical solution retaining part from a chemical solution source.
摘要翻译：一种用于注入恒定的定量化学品的装置，其能够将化学溶液注入超纯水中而不产生颗粒污染，此外，化学溶液到清洁喷嘴的注射间隔以几秒为单位进行控制秒至10秒以上，化学溶液的种类和切换为超纯水清洗的时间可以在1秒钟的短时间内进行。该装置包括具有用于保持化学溶液的化学溶液保留部分的化学溶液注入系统，用于加压和减压的控制系统，用于以规则的间隔控制化学溶液保留部分中的化学溶液的压力;注射控制系统，与控制化学溶液的压力一致地进行操作，并且构成为将化学溶液从化学溶液注入系统到超纯水流路的间歇注入和瞬时混合功能进行，并且注射停止功能和化学溶液补充系统，其结构化以便与化学溶液的控制协同工作，并且能够从化学溶液源补充化学溶液保留部分中的化学溶液。

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