会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Apparatus and method for cleaning semiconductor wafers
    • 用于清洁半导体晶片的装置和方法
    • US5725753A
    • 1998-03-10
    • US638233
    • 1996-04-26
    • Yasuyuki HaradaShigeyoshi Netsu
    • Yasuyuki HaradaShigeyoshi Netsu
    • B08B3/10C02F1/36C02F1/461H01L21/00H01L21/304H01L21/306
    • H01L21/02052B08B3/10C02F1/4618H01L21/67057C02F1/36C02F2001/4619C02F2201/4611C02F2201/46115C02F2201/46195
    • An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity. The apparatus used therefor comprises a rectangular vessel divided into a central cathode compartment, in which the wafers are held in a vertical disposition within an up-flow of pure water, and a pair of anode compartments by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which a cathode plate and anode plate are bonded.
    • 在半导体硅晶片的清洗处理中提出了一种改进,其中用碱性水溶液进行清洁的常规步骤被用临时碱性纯水清洗处理代替,所述临时碱性纯水通过在 结合到氢离子交换膜的表面的阴极和阳极,使得碱性清洁处理可以在温和条件下进行,以消除由于形成常规方法中不可避免的COP的麻烦。 此外,在转移到后续的酸性清洁步骤之前,在晶片的碱清洗之后的纯水冲洗可以被省略,以极大地有助于提高生产率。 所使用的装置包括分成中央阴极室的矩形容器,其中晶片在纯水的上升流中保持垂直布置,并且一对阳极室通过用一对氢离子交换 膜,其两侧粘合阴极板和阳极板。