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    • 1. 发明授权
    • TFT process with high transmittance
    • TFT工艺透光率高
    • US06291255B1
    • 2001-09-18
    • US09577358
    • 2000-05-22
    • Ting-Hui HuangI-Min LuShih-Chang Chang
    • Ting-Hui HuangI-Min LuShih-Chang Chang
    • H01L2184
    • H01L27/1259H01L27/1214
    • A method for manufacturing TFT (Thin Film Transistor) panel with high transmittance includes an intermediate-layer process. After the intermediate-layer process has been executed, the TFT panel is etched to remove the silicon nitride layer without coverage of the source conductive pattern and the drain conductive pattern. The transmittance of the portion of the TFT without shield of the source conductive pattern and the drain conductive pattern is thus higher than that of the portion of the TFT with the shield of the source conductive pattern and the drain conductive pattern. The intermediate-layer process in the preferred embodiment of the present invention has three aspects. In the first aspect, the first step is to bake the TFT panel. The second step is to form the contact hole in the insulating layer of the TFT panel. The third step is to form the source conductive pattern and the drain conductive pattern. In the second aspect, the first step is to form the contact hole in the insulating layer of the TFT panel, then form the source conductive pattern and the drain conductive pattern are formed, followed by the baking of the TFT panel including the source conductive pattern and the drain conductive pattern. In the third aspect, the first step is to form the contact hole in the insulating layer of the TFT panel, then sputtering a metallic layer on the TFT panel followed by a baking step.
    • 具有高透射率的TFT(薄膜晶体管)面板的制造方法包括中间层工艺。 在执行中间层处理之后,蚀刻TFT面板以去除氮化硅层而不覆盖源极导电图案和漏极导电图案。 因此,没有源极导体图案和漏极导电图案的屏蔽层的TFT的部分的透射率因此高于具有源极导电图案和漏极导电图案的屏蔽的TFT的部分的透射率。 本发明优选实施方案中的中间层方法具有三个方面。 在第一方面,第一步是烘烤TFT面板。 第二步是在TFT面板的绝缘层中形成接触孔。 第三步是形成源极导电图案和漏极导电图案。 在第二方面中,第一步骤是在TFT面板的绝缘层中形成接触孔,然后形成源极导电图案,形成漏极导电图案,然后烘烤包括源极导电图案的TFT面板 和漏极导电图案。 在第三方面中,第一步骤是在TFT面板的绝缘层中形成接触孔,然后在TFT面板上溅射金属层,随后进行烘烤步骤。
    • 2. 发明申请
    • Displays with Light-Curable Sealant
    • 带光固化密封胶的显示器
    • US20130154949A1
    • 2013-06-20
    • US13326713
    • 2011-12-15
    • Abbas Jamshidi RoudbariYoung-Bae ParkShih-Chang Chang
    • Abbas Jamshidi RoudbariYoung-Bae ParkShih-Chang Chang
    • G06F3/041G02F1/1335G02F1/1368G02F1/1339
    • G02F1/1339G02F2202/023G06F3/041G06F2203/04103G06F2203/04113
    • An electronic device may have a display such as a liquid crystal display. The display may include a layer of liquid crystal material interposed between a color filter layer and a thin-film transistor layer. The thin-film transistor layer may be provided with capacitive touch sensor electrodes. Wide metal lines on the thin-film transistor layer may be used to inhibit parasitic capacitances during touch sensor mode. The color filter layer may include a layer of black masking material that surrounds the active display area. A light-curable adhesive may used to attach the color filter layer to the thin-film transistor layer. Openings may be formed in the black masking material and in the metal lines on the thin-film transistor layer. The adhesive may be cured by applying ultraviolet light to the adhesive through the openings in the black masking material and through the openings in the metal lines.
    • 电子设备可以具有诸如液晶显示器的显示器。 显示器可以包括插在滤色器层和薄膜晶体管层之间的液晶材料层。 薄膜晶体管层可以设置有电容式触摸传感器电极。 薄膜晶体管层上的宽金属线可以用于抑制触摸传感器模式期间的寄生电容。 滤色器层可以包括围绕有源显示区域的黑色掩蔽材料层。 可以使用光固化粘合剂将滤色器层附着到薄膜晶体管层。 可以在黑色掩模材料和薄膜晶体管层上的金属线中形成开口。 通过将紫外光通过黑色掩蔽材料中的开口并通过金属线中的开口施加紫外光,粘合剂可以固化。
    • 8. 发明授权
    • Thin-film devices and method for fabricating the same on same substrate
    • 薄膜器件及其制造方法
    • US07180156B2
    • 2007-02-20
    • US10954674
    • 2004-09-30
    • Shih-Chang ChangYaw-Ming Tsai
    • Shih-Chang ChangYaw-Ming Tsai
    • H01L29/00
    • H01L27/1237H01L27/1214
    • To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.
    • 为了满足作为外围驱动电路和像素开关器件的TFT的不同要求,公开了具有各种厚度的栅极绝缘层的改进的TFT结构。 对于外围驱动电路,形成栅极绝缘层的厚度越薄,TFT的驱动能力越强。 然而,对于像素开关器件,形成栅极绝缘层的较厚的厚度,TFT具有更好的可靠性。 本发明提供一种第一TFT(外围驱动电路),包括第一栅极绝缘层和包括第一和第二栅极绝缘层的第二TFT(像素开关器件)。 因此,外围驱动电路的栅极绝缘层的厚度小于像素开关器件的厚度。
    • 10. 发明申请
    • Array substrates for electroluminescent displays and methods of forming the same
    • 用于电致发光显示器的阵列基板及其形成方法
    • US20060197441A1
    • 2006-09-07
    • US11071746
    • 2005-03-03
    • Yaw-Ming TsaiHsiu-Chun HsiehShih-Chang Chang
    • Yaw-Ming TsaiHsiu-Chun HsiehShih-Chang Chang
    • H01J1/62H01J63/04
    • H01L27/3258H01L27/3246H01L51/5206
    • Array substrates for electroluminescent (EL) devices and methods of forming the same are disclosed. The array substrates for electroluminescent (EL) devices include a substrate with at least one thin film transistor formed thereon, covered by a planarization layer. A first dielectric passivation layer with a contact hole therein covers parts of the planarization layer and exposes a source/drain electrode of the thin film transistor. A transparent electrode covers a portion of the first electric passivation layer and fills the contact hole, and is partly exposed by a patterned second dielectric passivation formed thereon. A plurality of spacers covers a portion of the second dielectric passivation layer to define an organic electroluminescent area with an exposed transparent electrode. An organic electroluminescent layer covers the exposed transparent electrode, and an electrode covers the organic electroluminescent layer.
    • 公开了用于电致发光(EL)器件的阵列衬底及其形成方法。 用于电致发光(EL)器件的阵列衬底包括其上形成有由平坦化层覆盖的至少一个薄膜晶体管的衬底。 具有接触孔的第一介电钝化层覆盖平坦化层的部分并且暴露薄膜晶体管的源极/漏极。 透明电极覆盖第一电钝化层的一部分并填充接触孔,并且通过形成在其上的图案化的第二介电钝化部分地露出。 多个间隔物覆盖第二电介质钝化层的一部分以限定具有暴露的透明电极的有机电致发光区域。 有机电致发光层覆盖暴露的透明电极,电极覆盖有机电致发光层。