专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050056838A1 Thin film transistor with self-aligned intra-gate electrode 失效
标题翻译：具有自对准栅极间电极的薄膜晶体管
公开(公告)号：US20050056838A1
公开(公告)日：2005-03-17
申请号：US10869210
申请日：2004-06-16
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang , Chen-Ting Huang , I-Wei Wu
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang , Chen-Ting Huang , I-Wei Wu
IPC分类号： H01L29/423 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78645 , H01L29/78675
摘要： A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.
摘要翻译：用于有源矩阵液晶显示器的薄膜晶体管包括衬底，源极和漏极区以及至少栅电极。衬底中包括多个本征区域，至少一个第一掺杂区域和两个第二掺杂区域。第一掺杂区域设置在多个固有区域之间。多个本征区域连接在一起，以经由第一掺杂区域形成连接结构，并且两个第二掺杂区域分别设置在连接结构的两端。源区和漏区分别耦合到设置在连接结构两端的两个第二掺杂区。栅电极设置在多个本征区域上，使得多个本征区域中的每一个的周边和相应的栅电极的周边基本上彼此对准。

2. 发明授权

US07800298B2 Light-emitting device having a planarized color filter 有权
标题翻译：具有平坦化滤色器的发光装置
公开(公告)号：US07800298B2
公开(公告)日：2010-09-21
申请号：US12008530
申请日：2008-01-11
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
IPC分类号： H01J1/62
CPC分类号： H01L27/322 , H01L27/3244 , H01L51/56
摘要： A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.
摘要翻译：发光元件及其制造方法。提供基板。在衬底上形成多个有源元件，限定多个像素区域。在像素区域上形成滤色器。将滤色器的表面平坦化以减少粗糙度。在滤色片上形成电极。在电极上形成发光层。在发光层上形成第二电极。

3. 发明申请

US20050253506A1 Light-emitting device and fabrication method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050253506A1
公开(公告)日：2005-11-17
申请号：US10995594
申请日：2004-11-22
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
IPC分类号： G09F9/00 , H01L27/32 , H01L51/56 , H05B33/00 , H05B33/10
CPC分类号： H01L27/322 , H01L27/3244 , H01L51/56
摘要： A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.
摘要翻译：发光元件及其制造方法。提供基板。在衬底上形成多个有源元件，限定多个像素区域。在像素区域上形成滤色器。将滤色器的表面平坦化以减少粗糙度。在滤色片上形成电极。在电极上形成发光层。在发光层上形成第二电极。

4. 发明申请

US20080129196A1 Light-emitting device having a planarized color filter 有权
标题翻译：具有平坦化滤色器的发光装置
公开(公告)号：US20080129196A1
公开(公告)日：2008-06-05
申请号：US12008530
申请日：2008-01-11
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
IPC分类号： H01L27/28 , H01L33/00 , H01L29/04
CPC分类号： H01L27/322 , H01L27/3244 , H01L51/56
摘要： A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.
摘要翻译：发光元件及其制造方法。提供基板。在衬底上形成多个有源元件，限定多个像素区域。在像素区域上形成滤色器。将滤色器的表面平坦化以减少粗糙度。在滤色片上形成电极。在电极上形成发光层。在发光层上形成第二电极。

5. 发明申请

US20060197441A1 Array substrates for electroluminescent displays and methods of forming the same 审中-公开
标题翻译：用于电致发光显示器的阵列基板及其形成方法
公开(公告)号：US20060197441A1
公开(公告)日：2006-09-07
申请号：US11071746
申请日：2005-03-03
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3258 , H01L27/3246 , H01L51/5206
摘要： Array substrates for electroluminescent (EL) devices and methods of forming the same are disclosed. The array substrates for electroluminescent (EL) devices include a substrate with at least one thin film transistor formed thereon, covered by a planarization layer. A first dielectric passivation layer with a contact hole therein covers parts of the planarization layer and exposes a source/drain electrode of the thin film transistor. A transparent electrode covers a portion of the first electric passivation layer and fills the contact hole, and is partly exposed by a patterned second dielectric passivation formed thereon. A plurality of spacers covers a portion of the second dielectric passivation layer to define an organic electroluminescent area with an exposed transparent electrode. An organic electroluminescent layer covers the exposed transparent electrode, and an electrode covers the organic electroluminescent layer.
摘要翻译：公开了用于电致发光（EL）器件的阵列衬底及其形成方法。用于电致发光（EL）器件的阵列衬底包括其上形成有由平坦化层覆盖的至少一个薄膜晶体管的衬底。具有接触孔的第一介电钝化层覆盖平坦化层的部分并且暴露薄膜晶体管的源极/漏极。透明电极覆盖第一电钝化层的一部分并填充接触孔，并且通过形成在其上的图案化的第二介电钝化部分地露出。多个间隔物覆盖第二电介质钝化层的一部分以限定具有暴露的透明电极的有机电致发光区域。有机电致发光层覆盖暴露的透明电极，电极覆盖有机电致发光层。

6. 发明申请

US20050158981A1 METHOD OF FABRICATING DISPLAY PANEL 审中-公开
标题翻译：制作显示面板的方法
公开(公告)号：US20050158981A1
公开(公告)日：2005-07-21
申请号：US10710200
申请日：2004-06-25
申请人： Shih-Chang Chang , Hsiu-Chun Hsieh , Yaw-Ming Tsai
发明人： Shih-Chang Chang , Hsiu-Chun Hsieh , Yaw-Ming Tsai
IPC分类号： G02F1/1362 , H01L21/00 , H01L21/44 , H01L21/77 , H01L21/84
CPC分类号： G02F1/136227 , H01L27/124 , H01L27/1244 , H01L27/1248
摘要： First, a substrate with at least one thin film transistor is provided. A protection layer and a planarization layer are sequentially formed on the substrate. Then, the planarization layer is patterned and an opening is formed in the planarization above the thin film transistor. An etching process is performed by using the planarization layer as a hard mask to form a first contact hole, which is extending through to the thin film transistor, in the protection layer. Then, the planarization layer surrounding the opening is partially removed to form a second contact hole in the planarization layer above the first contact hole. After that, a transparent conductive layer is formed on the surface of the planarization layer, the second contact hole, the first contact hole, partial contact plug and electrically connected to the thin film transistor via the first contact hole and the second contact hole.
摘要翻译：首先，提供具有至少一个薄膜晶体管的衬底。在基板上依次形成保护层和平坦化层。然后，对平坦化层进行图案化，并且在薄膜晶体管上方的平坦化中形成开口。通过使用平坦化层作为硬掩模来进行蚀刻工艺，以在保护层中形成延伸到薄膜晶体管的第一接触孔。然后，围绕开口的平坦化层被部分去除，以在第一接触孔上方的平坦化层中形成第二接触孔。之后，在平坦化层，第二接触孔，第一接触孔，部分接触插塞的表面上形成透明导电层，经由第一接触孔和第二接触孔与薄膜晶体管电连接。

7. 发明授权

US07338338B2 Method of fabricating a light-emitting device having a planarized color filter 有权
标题翻译：制造具有平坦化滤色器的发光装置的方法
公开(公告)号：US07338338B2
公开(公告)日：2008-03-04
申请号：US10995594
申请日：2004-11-22
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang
IPC分类号： H01J9/00
CPC分类号： H01L27/322 , H01L27/3244 , H01L51/56
摘要： A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.
摘要翻译：发光元件及其制造方法。提供基板。在衬底上形成多个有源元件，限定多个像素区域。在像素区域上形成滤色器。将滤色器的表面平坦化以减少粗糙度。在滤色片上形成电极。在电极上形成发光层。在发光层上形成第二电极。

8. 发明授权

US07023131B2 Active matrix organic light emitting display and method of forming the same 有权
标题翻译：有源矩阵有机发光显示器及其形成方法
公开(公告)号：US07023131B2
公开(公告)日：2006-04-04
申请号：US10762203
申请日：2004-01-20
申请人： Shih-Chang Chang , Hsiu-Chun Hsieh , Yaw-Ming Tsai
发明人： Shih-Chang Chang , Hsiu-Chun Hsieh , Yaw-Ming Tsai
IPC分类号： H01J63/04
CPC分类号： H01L27/3258 , H01L27/3246 , H01L51/5206
摘要： An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.
摘要翻译：一种有源矩阵有机发光显示器及其形成方法。 AM-OLED包括具有用作驱动电路的多个薄膜晶体管的衬底，在衬底上保形地形成的电介质层和薄膜晶体管，形成在电介质层的部分上以限定暴露表面的第一绝缘层所述介电层作为预定的透明电极区域，在所述预定透明电极区域上保形地形成的透明电极，形成在所述透明电极两侧的第二绝缘层，以暴露所述透明电极的表面的一部分，形成在所述透明电极区域上的有机电致发光层透明电极和形成在有机电致发光层上的金属电极。绝缘层平滑了透明电极表面，增强了AM-OLED的发光特性。

9. 发明授权

US07009204B2 Thin film transistor with self-aligned intra-gate electrode 失效
标题翻译：具有自对准栅极间电极的薄膜晶体管
公开(公告)号：US07009204B2
公开(公告)日：2006-03-07
申请号：US10869210
申请日：2004-06-16
申请人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang , Chen-Ting Huang , I-Wei Wu
发明人： Yaw-Ming Tsai , Hsiu-Chun Hsieh , Shih-Chang Chang , Chen-Ting Huang , I-Wei Wu
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/78645 , H01L29/78675
摘要： A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.
摘要翻译：用于有源矩阵液晶显示器的薄膜晶体管包括衬底，源极和漏极区以及至少栅电极。衬底中包括多个本征区域，至少一个第一掺杂区域和两个第二掺杂区域。第一掺杂区域设置在多个固有区域之间。多个本征区域连接在一起，以经由第一掺杂区域形成连接结构，并且两个第二掺杂区域分别设置在连接结构的两端。源区和漏区分别耦合到设置在连接结构两端的两个第二掺杂区。栅电极设置在多个本征区域上，使得多个本征区域中的每一个的周边和相应的栅电极的周边基本上彼此对准。

10. 发明授权

US08766270B2 Pixel structure and manufacturing method thereof 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US08766270B2
公开(公告)日：2014-07-01
申请号：US13004034
申请日：2011-01-11
申请人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
发明人： Hsiu-Chun Hsieh , Yi-Wei Chen , Ta-Wei Chiu , Chung-Tao Chen
IPC分类号： H01L27/14 , H01L29/04 , H01L29/10 , H01L21/00 , H01L27/12
CPC分类号： H01L27/1288 , H01L27/1237
摘要： A pixel structure is provided. A first insulating pattern is on the first polysilicon pattern. A second insulating pattern is on the second polysilicon pattern and separated from the first insulating pattern. An insulating layer covers the first and the second insulating patterns. A first gate and a second gate are on the insulating layer. A first covering layer covers the first and the second gates. A first source metal layer and a first drain metal layer are on the first covering layer and electrically connected to a first source region and a first drain region. A second source metal layer and a second drain metal layer are on the first covering layer and electrically connected to a second source region and a second drain region. A pixel electrode is electrically connected to the first drain metal layer.
摘要翻译：提供像素结构。第一绝缘图案在第一多晶硅图案上。第二绝缘图案在第二多晶硅图案上并且与第一绝缘图案分离。绝缘层覆盖第一和第二绝缘图案。第一栅极和第二栅极位于绝缘层上。第一覆盖层覆盖第一和第二栅极。第一源极金属层和第一漏极金属层在第一覆盖层上并且电连接到第一源极区域和第一漏极区域。第二源极金属层和第二漏极金属层在第一覆盖层上并且电连接到第二源极区域和第二漏极区域。像素电极电连接到第一漏极金属层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式