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1. 发明授权

US08940208B2 Fabricating method of flexible display and flexible display 有权
标题翻译：灵活显示和灵活显示的制作方法
公开(公告)号：US08940208B2
公开(公告)日：2015-01-27
申请号：US13337289
申请日：2011-12-27
申请人： Chan-Jui Liu , Chih-Hung Tsai , Chun-Hsiang Fang
发明人： Chan-Jui Liu , Chih-Hung Tsai , Chun-Hsiang Fang
IPC分类号： B28B7/14 , G09F9/30 , B32B37/26
CPC分类号： G09F9/301 , B32B37/26 , B32B2037/268 , B32B2457/20 , Y10T428/261 , Y10T428/31721
摘要： A fabricating method of a flexible display is provided. A release layer is formed on a carrier substrate. The release layer is patterned to form a patterned release layer. A flexible substrate is formed on the patterned release layer, wherein the flexible substrate covers the patterned release layer and a portion of the flexible substrate contacts the carrier substrate. An adhesive force between the patterned release layer and the flexible substrate is larger than an adhesive force between the patterned release layer and the carrier substrate. A device layer is formed on the flexible substrate. A display layer is formed on the device layer. The flexible substrate and patterned release layer are cut simultaneously. The patterned release layer being cut is separated from the carrier substrate, wherein the flexible substrate, the device layer and the display layer which have been cut are sequentially disposed on the separated patterned release layer.
摘要翻译：提供了一种柔性显示器的制造方法。剥离层形成在载体基板上。图案化剥离层以形成图案化的剥离层。在图案化的剥离层上形成柔性基底，其中柔性基底覆盖图案化的释放层，柔性基底的一部分接触载体基底。图案化剥离层和柔性基底之间的粘合力大于图案化剥离层和载体基底之间的粘合力。在柔性基板上形成器件层。在器件层上形成显示层。柔性基板和图案化剥离层同时被切割。被切割的图案化剥离层与载体基板分离，其中已经被切割的柔性基板，器件层和显示层依次设置在分离的图案化释放层上。

2. 发明授权

US08710739B2 Flexible organic light emitting device and manufacturing method thereof 有权
标题翻译：柔性有机发光器件及其制造方法
公开(公告)号：US08710739B2
公开(公告)日：2014-04-29
申请号：US13352344
申请日：2012-01-18
申请人： Chih-Hung Tsai , Ting-Yi Cho , Chun-Jan Wang , Chun-Hsiang Fang
发明人： Chih-Hung Tsai , Ting-Yi Cho , Chun-Jan Wang , Chun-Hsiang Fang
IPC分类号： H05B33/14 , H01J9/00
CPC分类号： H01L51/0097 , H01L51/524 , H01L51/5253 , Y02E10/549 , Y02P70/521
摘要： A flexible organic light emitting device includes a flexible substrate, an organic light emitting unit and a covering substrate. The organic light emitting unit includes a first electrode layer, a second electrode layer opposing the first electrode, and a light emitting layer, which is disposed between the first and second electrode layers. The covering substrate includes a base film, an insulation layer and an adhesion layer. An inner surface of the base film is facing an inner surface of the flexible substrate, and space is formed there-between. The insulation layer is disposed on the inner surface of the base film, and an adhesive force between the insulation layer and the organic light emitting unit is less than 0.1 N/cm. The adhesion layer is disposed between the insulation layer and the inner surface of the base film, covers the insulation layer and the organic light emitting unit, and fills the space.
摘要翻译：柔性有机发光器件包括柔性衬底，有机发光单元和覆盖衬底。有机发光单元包括第一电极层，与第一电极相对的第二电极层和设置在第一和第二电极层之间的发光层。覆盖基板包括基膜，绝缘层和粘合层。基膜的内表面面向柔性基板的内表面，并且在其之间形成空间。绝缘层设置在基膜的内表面上，绝缘层和有机发光单元之间的粘合力小于0.1N / cm。粘合层设置在绝缘层和基膜的内表面之间，覆盖绝缘层和有机发光单元，并填充空间。

3. 发明授权

US08492967B2 Light emitting device and display panel 有权
标题翻译：发光装置和显示面板
公开(公告)号：US08492967B2
公开(公告)日：2013-07-23
申请号：US12835747
申请日：2010-07-14
申请人： Chun-Liang Lin , Chun-Hsiang Fang , Chen-Chi Lin , Chung-Wei Liu
发明人： Chun-Liang Lin , Chun-Hsiang Fang , Chen-Chi Lin , Chung-Wei Liu
IPC分类号： H01L51/00
CPC分类号： H01L51/5268
摘要： A light emitting device includes a substrate, a patterned light-scattering layer, and an electroluminescent device. The patterned light-scattering layer is disposed on a portion of the substrate. The patterned light-scattering layer has a bottom surface in contact with the substrate, a top surface opposite to the bottom surface, and a plurality of sidewalls connecting the bottom surface and the top surface. The electroluminescent device is at least disposed on the sidewalls.
摘要翻译：发光器件包括衬底，图案化光散射层和电致发光器件。图案化光散射层设置在基板的一部分上。图案化光散射层具有与基板接触的底表面，与底表面相对的顶表面和连接底表面和顶表面的多个侧壁。电致发光器件至少设置在侧壁上。

4. 发明授权

US08390188B2 Light emitting unit of electroluminescence device capable of increasing aperture rate manufacturing method thereof 有权
标题翻译：能够提高孔径率制造方法的电致发光元件的发光单元
公开(公告)号：US08390188B2
公开(公告)日：2013-03-05
申请号：US12961510
申请日：2010-12-07
申请人： Hui-Jun Wang , Chieh-Wei Chen , Chun-Hsiang Fang
发明人： Hui-Jun Wang , Chieh-Wei Chen , Chun-Hsiang Fang
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L51/5206 , H01L27/329 , H01L2251/5346 , H01L2251/5392 , H01L2251/55
摘要： A light emitting unit of an electroluminescence device and a manufacturing method thereof are provided. The light emitting unit of the electroluminescence device includes a power line, a first electrode layer, a light emitting layer and a second electrode layer. The power line is on a substrate. The first electrode layer is disposed on the substrate and is electrically connected to the power line. In particular, a top portion of the first electrode layer has an oxygen concentration higher than that of a bottom portion of the first electrode layer. The light emitting layer is disposed on the first electrode layer and the second electrode layer is disposed on the light emitting layer.
摘要翻译：提供了一种电致发光器件的发光单元及其制造方法。电致发光器件的发光单元包括电源线，第一电极层，发光层和第二电极层。电源线在基板上。第一电极层设置在基板上并电连接到电力线。特别地，第一电极层的顶部的氧浓度高于第一电极层的底部的氧浓度。发光层设置在第一电极层上，第二电极层设置在发光层上。

5. 发明授权

US08299471B2 Organic electroluminescent device and fabrication method thereof 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US08299471B2
公开(公告)日：2012-10-30
申请号：US12322039
申请日：2009-01-27
申请人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
发明人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
IPC分类号： H01L27/14 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , H01L27/3265 , H01L27/3269 , H01L29/04
摘要： The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.
摘要翻译：本发明公开了一种包括基板的有机电致发光器件。衬底包括第一控制区域和第二控制区域，设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。第一电介质层设置在用作第一栅介质层的多晶硅有源层上，第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上，其中第一栅极和第一导电类型源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层，设置在第二栅极上的微晶硅有源层。

6. 发明授权

US08183769B2 Organic electroluminescent display unit and method for fabricating the same 有权
标题翻译：有机电致发光显示单元及其制造方法
公开(公告)号：US08183769B2
公开(公告)日：2012-05-22
申请号：US12907033
申请日：2010-10-19
申请人： Ting-Kuo Chang , Chun-Hsiang Fang
发明人： Ting-Kuo Chang , Chun-Hsiang Fang
IPC分类号： G09G3/30 , H01J1/62
CPC分类号： H01L27/3269
摘要： An organic electroluminescent display unit suitable to be electrically connected to a scan line and a data line including at least one transistor, a first photo-sensor, a second photo-sensor, a conductive layer, an organic electroluminescent layer and a cathode layer is provided. The conductive layer entirely covers the second photo-sensitive layer. A method of fabricating an organic electroluminescent display unit with the integrating a fabrication of a photo-sensor into a fabrication of the organic electroluminescent display panel is further provided. The cost for fabricating the organic electroluminescent display unit of the invention can be further reduced.
摘要翻译：提供一种适于电连接到扫描线和包括至少一个晶体管，第一光传感器，第二光传感器，导电层，有机电致发光层和阴极层的数据线的有机电致发光显示单元。导电层完全覆盖第二感光层。还提供了一种制造有机电致发光显示单元的方法，其将光传感器的制造集成到有机电致发光显示面板的制造中。可以进一步降低制造本发明的有机电致发光显示单元的成本。

7. 发明申请

US20120068593A1 LIGHT EMITTING UNIT OF ELECTROLUMINESCENCE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电致发光器件的发光单元及其制造方法
公开(公告)号：US20120068593A1
公开(公告)日：2012-03-22
申请号：US12961510
申请日：2010-12-07
申请人： Hui-Jun Wang , Chieh-Wei Chen , Chun-Hsiang Fang
发明人： Hui-Jun Wang , Chieh-Wei Chen , Chun-Hsiang Fang
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L51/5206 , H01L27/329 , H01L2251/5346 , H01L2251/5392 , H01L2251/55
摘要： A light emitting unit of an electroluminescence device and a manufacturing method thereof are provided. The light emitting unit of the electroluminescence device includes a power line, a first electrode layer, a light emitting layer and a second electrode layer. The power line is on a substrate. The first electrode layer is disposed on the substrate and is electrically connected to the power line. In particular, a top portion of the first electrode layer has an oxygen concentration higher than that of a bottom portion of the first electrode layer. The light emitting layer is disposed on the first electrode layer and the second electrode layer is disposed on the light emitting layer.
摘要翻译：提供了一种电致发光器件的发光单元及其制造方法。电致发光器件的发光单元包括电源线，第一电极层，发光层和第二电极层。电源线在基板上。第一电极层设置在基板上并电连接到电力线。特别地，第一电极层的顶部的氧浓度高于第一电极层的底部的氧浓度。发光层设置在第一电极层上，第二电极层设置在发光层上。

8. 发明授权

US07411430B2 Analog output buffer circuit for flat panel display 有权
标题翻译：用于平板显示的模拟输出缓冲电路
公开(公告)号：US07411430B2
公开(公告)日：2008-08-12
申请号：US11306813
申请日：2006-01-12
申请人： Huang-Chung Cheng , Ya-Hsiang Tai , Bo-Ting Chen , Chun-Hsiang Fang
发明人： Huang-Chung Cheng , Ya-Hsiang Tai , Bo-Ting Chen , Chun-Hsiang Fang
IPC分类号： H03K3/00
CPC分类号： G09G3/3685 , G09G3/20 , G09G2310/0291 , G09G2310/08 , G09G2320/02
摘要： An analog output buffer circuit for a flat panel display is provided for improving an output signal distortion. The circuit includes a transistor, a current source, an input capacitor, an upper switch, a lower switch, a first switch, a second switch and a third switch. In which, the transistor and the current source are electrically connected in series between a first power supply and a second power supply. The current source provides a compensatory current for the transistor when a leakage current occurs. The upper switch and the first switch are turned on during the first period, and the lower switch and the second switch are turn on during the second period, in which the second period is after the first period. Those switches eliminate the drawback of different voltage levels between the input signal and the output signal obtained from the output buffer circuit inputted by the input signal.
摘要翻译：提供了一种用于平板显示器的模拟输出缓冲电路，用于改善输出信号失真。电路包括晶体管，电流源，输入电容器，上开关，下开关，第一开关，第二开关和第三开关。其中，晶体管和电流源串联电连接在第一电源和第二电源之间。当发生漏电流时，电流源为晶体管提供补偿电流。上部开关和第一开关在第一时段期间导通，并且下部开关和第二开关在第二时段期间接通，其中第二周期在第一周期之后。这些开关消除了输入信号和从输入信号输入的输出缓冲电路获得的输出信号之间的不同电压电平的缺点。

9. 发明授权

US07145209B2 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07145209B2
公开(公告)日：2006-12-05
申请号：US10850980
申请日：2004-05-20
申请人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L29/94 , H01L31/062
CPC分类号： H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
摘要翻译：具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。屏蔽区域比扩展区域厚。形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

10. 发明申请

US20070057332A1 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070057332A1
公开(公告)日：2007-03-15
申请号：US11598844
申请日：2006-11-13
申请人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L29/76
CPC分类号： H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
摘要翻译：具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。屏蔽区域比扩展区域厚。形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

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