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1. 发明授权

US06319783B1 Process to fabricate a novel source-drain extension 有权
标题翻译：制造新颖的源极 - 漏极扩展的过程
公开(公告)号：US06319783B1
公开(公告)日：2001-11-20
申请号：US09443425
申请日：1999-11-19
申请人： Ting Cheong Ang , Shyue Pong Quek , Jun Song , Xing Yu
发明人： Ting Cheong Ang , Shyue Pong Quek , Jun Song , Xing Yu
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： A process for fabricating a MOSFET device, featuring source/drain extension regions, formed after the utilization of high temperature processes, such as heavily doped source/drain regions, has been developed. Disposable insulator spacers are formed on the sides of doped, SEG silicon regions, followed formation of a gate insulator layer, and an overlying gate structure, on a region of the semiconductor substrate located between the doped SEG silicon regions. The temperature experienced during these process steps result in the formation of the heavily doped source/drain, underlying the SEG silicon regions. Selective removal of the disposable spacers, allows the source/drain extension regions to be placed in the space vacated by the disposable spacers, adjacent to the heavily doped source/drain region. Insulator spacers are then used to fill the spaces vacated by removal of the disposable spacers, directly overlying the source/drain extension regions. Additional iterations include the use of an L shaped spacer, overlying the source/drain extension region, as well as the formation of metal silicide, on the doped SEG silicon regions, and on the gate structures.
摘要翻译：已经开发了一种用于制造MOSFET器件的方法，其特征在于在利用高温工艺（例如重掺杂源极/漏极区域）之后形成的源极/漏极延伸区域。在掺杂的SEG硅区域的侧面上形成一次性绝缘体间隔物，随后在位于掺杂的SEG硅区域之间的半导体衬底的区域上形成栅极绝缘体层和覆盖栅极结构。在这些工艺步骤中经历的温度导致SEG硅区域下方的重掺杂源极/漏极的形成。选择性地去除一次性间隔件允许源极/漏极延伸区域被放置在与重掺杂的源极/漏极区域相邻的由一次性间隔物空出的空间中。然后使用绝缘体间隔物来填充通过去除一次性间隔件而空出的空间，直接覆盖源极/漏极延伸区域。另外的迭代包括在掺杂的SEG硅区域上以及栅极结构上使用覆盖源极/漏极延伸区域的L形间隔物以及金属硅化物的形成。

2. 发明授权

US06455384B2 Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers 有权
标题翻译：用于形成具有位于L形间隔物下方的源极/漏极延伸区域的MOSFET器件的方法
公开(公告)号：US06455384B2
公开(公告)日：2002-09-24
申请号：US09972645
申请日：2001-10-09
申请人： Ting Cheong Ang , Shyue Fong Quek , Jun Song , Xing Yu
发明人： Ting Cheong Ang , Shyue Fong Quek , Jun Song , Xing Yu
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： A process for fabricating a MOSFET device, featuring source/drain extension regions, formed after the utilization of high temperature processes, such as heavily doped source/drain regions, has been developed. Disposable insulator spacers are formed on the sides of doped, SEG silicon regions, followed formation of a gate insulator layer, and an overlying gate structure, on a region of the semiconductor substrate located between the doped SEG silicon regions. The temperature experienced during these process steps result in the formation of the heavily doped source/drain, underlying the SEG silicon regions. Selective removal of the disposable spacers, allows the source/drain extension regions to be placed in the space vacated by the disposable spacers, adjacent to the heavily doped source/drain region. Insulator spacers are then used to fill the spaces vacated by removal of the disposable spacers, directly overlying the source/drain extension regions. Additional iterations include the use of an L shaped spacer, overlying the source/drain extension region, as well as the formation of metal silicide, on the doped SEG silicon regions, and on the gate structures.
摘要翻译：已经开发了一种用于制造MOSFET器件的方法，其特征在于在利用高温工艺（例如重掺杂源极/漏极区域）之后形成的源极/漏极延伸区域。在掺杂的SEG硅区域的侧面上形成一次性绝缘体间隔物，随后在位于掺杂的SEG硅区域之间的半导体衬底的区域上形成栅极绝缘体层和覆盖栅极结构。在这些工艺步骤中经历的温度导致SEG硅区域下方的重掺杂源极/漏极的形成。选择性地去除一次性间隔件允许源极/漏极延伸区域被放置在与重掺杂的源极/漏极区域相邻的由一次性间隔物空出的空间中。然后使用绝缘体间隔物来填充通过去除一次性间隔件而空出的空间，直接覆盖源极/漏极延伸区域。另外的迭代包括在掺杂的SEG硅区域上以及栅极结构上使用覆盖源极/漏极延伸区域的L形间隔物以及金属硅化物的形成。

3. 发明授权

US06376319B2 Process to fabricate a source-drain extension 失效
标题翻译：制造源极 - 漏极扩展的过程
公开(公告)号：US06376319B2
公开(公告)日：2002-04-23
申请号：US09972629
申请日：2001-10-09
申请人： Ting Cheong Ang , Shyue Fong Quek , Jun Song , Xing Yu
发明人： Ting Cheong Ang , Shyue Fong Quek , Jun Song , Xing Yu
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： A process for fabricating a MOSFET device, featuring source/drain extension regions, formed after the utilization of high temperature processes, such as heavily doped source/drain regions, has been developed. Disposable insulator spacers are formed on the sides of doped, SEG silicon regions, followed formation of a gate insulator layer, and an overlying gate structure, on a region of the semiconductor substrate located between the doped SEG silicon regions. The temperature experienced during these process steps result in the formation of the heavily doped source/drain, underlying the SEG silicon regions. Selective removal of the disposable spacers, allows the source/drain extension regions to be placed in the space vacated by the disposable spacers, adjacent to the heavily doped source/drain region. Insulator spacers are then used to fill the spaces vacated by removal of the disposable spacers, directly overlying the source/drain extension regions. Additional iterations include the use of an L shaped spacer, overlying the source/drain extension region, as well as the formation of metal silicide, on the doped SEG silicon regions, and on the gate structures.
摘要翻译：已经开发了一种用于制造MOSFET器件的方法，其特征在于在利用高温工艺（例如重掺杂源极/漏极区域）之后形成的源极/漏极延伸区域。在掺杂的SEG硅区域的侧面上形成一次性绝缘体间隔物，随后在位于掺杂的SEG硅区域之间的半导体衬底的区域上形成栅极绝缘体层和覆盖栅极结构。在这些工艺步骤中经历的温度导致SEG硅区域下方的重掺杂源极/漏极的形成。选择性地去除一次性间隔件允许源极/漏极延伸区域被放置在与重掺杂的源极/漏极区域相邻的由一次性间隔物空出的空间中。然后使用绝缘体间隔物来填充通过去除一次性间隔件而空出的空间，直接覆盖源极/漏极延伸区域。另外的迭代包括在掺杂的SEG硅区域上以及栅极结构上使用覆盖源极/漏极延伸区域的L形间隔物以及金属硅化物的形成。

4. 发明授权

US06787422B2 Method of body contact for SOI mosfet 有权
标题翻译： SOI mosfet的身体接触方法
公开(公告)号：US06787422B2
公开(公告)日：2004-09-07
申请号：US09755572
申请日：2001-01-08
申请人： Ting Cheong Ang , Sang Yee Loong , Shyue Fong Quek , Jun Song
发明人： Ting Cheong Ang , Sang Yee Loong , Shyue Fong Quek , Jun Song
IPC分类号： H01L21336
CPC分类号： H01L29/66772 , H01L29/78615
摘要： A new method for forming a silicon-on-insulator MOSFET while eliminating floating body effects is described. A silicon-on-insulator substrate is provided comprising a silicon semiconductor substrate underlying an oxide layer underlying a silicon layer. A first trench is etched partially through the silicon layer and not to the underlying oxide layer. Second trenches are etched fully through the silicon layer to the underlying oxide layer wherein the second trenches separate active areas of the semiconductor substrate and wherein one of the first trenches lies within each of the active areas. The first and second trenches are filled with an insulating layer. Gate electrodes and associated source and drain regions are formed in and on the silicon layer in each active area. An interlevel dielectric layer is deposited overlying the gate electrodes. First contacts are opened through the interlevel dielectric layer to the underlying source and drain regions. A second contact opening is made through the interlevel dielectric layer in each of the active regions wherein the second contact opening contacts both the first trench and one of the second trenches. The first and second contact openings are filled with a conducting layer to complete formation of a silicon-on-insulator device in the fabrication of integrated circuits.
摘要翻译：描述了一种在消除浮体效应的同时形成绝缘体上硅MOSFET的新方法。提供了一种绝缘体上硅衬底，其包括位于硅层下面的氧化物层下面的硅半导体衬底。第一沟槽部分地被蚀刻穿过硅层而不是蚀刻到下面的氧化物层。第二沟槽被完全蚀刻通过硅层到下面的氧化物层，其中第二沟槽分离半导体衬底的有源区域，并且其中第一沟槽中的一个位于每个有源区域内。第一和第二沟槽填充有绝缘层。栅极电极和相关的源极和漏极区域形成在每个有源区域中的硅层中和硅层上。沉积覆盖栅电极的层间电介质层。第一触点通过层间介质层开放到下面的源极和漏极区域。在每个有源区域中通过层间电介质层形成第二接触开口，其中第二接触开口接触第一沟槽和第二沟槽中的一个沟槽。第一和第二接触开口填充有导电层，以在集成电路的制造中完成绝缘体上硅器件的形成。

5. 发明授权

US06329253B1 Thick oxide MOS device used in ESD protection circuit 有权
标题翻译： ESD保护电路中使用的厚氧化物MOS器件
公开(公告)号：US06329253B1
公开(公告)日：2001-12-11
申请号：US09434922
申请日：1999-11-05
申请人： Jun Song , Yonqzang Zhang , Shyue Fong Quek , Ting Cheong Ang , Jun Cai , Puay Ing Ong
发明人： Jun Song , Yonqzang Zhang , Shyue Fong Quek , Ting Cheong Ang , Jun Cai , Puay Ing Ong
IPC分类号： H01L21336
CPC分类号： H01L29/66621 , H01L21/76224 , H01L27/0266 , H01L29/7834
摘要： A method for forming a novel thick oxide electrostatic discharge device using shallow trench isolation technology is described. A trench is etched into a semiconductor substrate. An oxide layer is deposited overlying the semiconductor substrate and filling the trench. The oxide within the trench is partially etched away leaving the oxide on the sidewalls and bottom of the trench. The oxide is polished away to the surface of the semiconductor substrate whereby oxide remains only on the sidewalls and bottom of the trench. A gate is formed within the trench whereby the gate is surrounded by the oxide. First ions are implanted into the semiconductor substrate adjacent to the trench to form N-wells. Second ions are implanted into the semiconductor substrate in a top portion of the N-wells to form source/drain regions. Third ions are implanted into the semiconductor substrate underlying the N-wells and underlying the trench to form electrostatic discharge trigger taps. This completes formation of an electrostatic discharge device in the fabrication of integrated circuits.
摘要翻译：描述了使用浅沟槽隔离技术形成新的厚氧化物静电放电装置的方法。将沟槽蚀刻到半导体衬底中。沉积在半导体衬底上并填充沟槽的氧化物层。部分地蚀刻沟槽内的氧化物，留下沟槽的侧壁和底部上的氧化物。氧化物被抛光到半导体衬底的表面，由此氧化物仅保留在沟槽的侧壁和底部上。在沟槽内形成栅极，由此栅极被氧化物包围。将第一离子注入到与沟槽相邻的半导体衬底中以形成N阱。在N阱的顶部将第二离子注入到半导体衬底中以形成源/漏区。将第三离子注入位于N阱下方并位于沟槽下方的半导体衬底中以形成静电放电触发抽头。这就形成了集成电路制造中的静电放电装置。

6. 发明授权

US06303414B1 Method of forming PID protection diode for SOI wafer 有权
标题翻译：形成SOI晶圆的PID保护二极管的方法
公开(公告)号：US06303414B1
公开(公告)日：2001-10-16
申请号：US09614558
申请日：2000-07-12
申请人： Ting Cheong Ang , Shyue Fong Quek , Sang Yee Loong , Jun Song
发明人： Ting Cheong Ang , Shyue Fong Quek , Sang Yee Loong , Jun Song
IPC分类号： H01L2100
CPC分类号： H01L21/84 , H01L27/1203
摘要： An integrated microelectronics semiconductor circuit fabricated on a silicon-on-insulator (SOI) type substrate can be protected from unwanted current surges and excessive heat buildup during fabrication by means of a heat-dissipating, protective plasma-induced-damage (PID) diode. The present invention fabricates such a protective diode as a part of the overall scheme in which the transistor devices are formed.
摘要翻译：在绝缘体上硅（SOI）型衬底上制造的集成微电子半导体电路可以通过散热，保护等离子体诱导损伤（PID）二极管在制造期间免受不必要的电流浪涌和过度积累热量。本发明制造这样的保护二极管作为其中形成晶体管器件的整体方案的一部分。

7. 发明授权

US06611024B2 Method of forming PID protection diode for SOI wafer 有权
公开(公告)号：US06611024B2
公开(公告)日：2003-08-26
申请号：US09946981
申请日：2001-09-06
申请人： Ting Cheong Ang , Shyue Fong Quek , Sang Yee Loong , Jun Song
发明人： Ting Cheong Ang , Shyue Fong Quek , Sang Yee Loong , Jun Song
IPC分类号： H01L2701
CPC分类号： H01L21/84 , H01L27/1203
摘要： An integrated microelectronics semiconductor circuit fabricated on a silicon-on-insulator (SOI) type substrate can be protected from unwanted current surges and excessive heat buildup during fabrication by means of a heat-dissipating, protective plasma-induced-damage (PID) diode. The present invention fabricates such a protective diode as a part of the overall scheme in which the transistor devices are formed.

8. 发明授权

US06963113B2 Method of body contact for SOI MOSFET 有权
标题翻译： SOI MOSFET的体接触方法
公开(公告)号：US06963113B2
公开(公告)日：2005-11-08
申请号：US10915670
申请日：2004-08-10
申请人： Ting Cheong Ang , Sang Yee Loong , Shyue Fong Quek , Jun Song
发明人： Ting Cheong Ang , Sang Yee Loong , Shyue Fong Quek , Jun Song
IPC分类号： H01L21/336 , H01L29/786 , H01L29/76
CPC分类号： H01L29/66772 , H01L29/78615
摘要： A new method for forming a silicon-on-insulator MOSFET while eliminating floating body effects is described. A silicon-on-insulator substrate is provided comprising a silicon semiconductor substrate underlying an oxide layer underlying a silicon layer. A first trench is etched partially through the silicon layer and not to the underlying oxide layer. Second trenches are etched fully through the silicon layer to the underlying oxide layer wherein the second trenches separate active areas of the semiconductor substrate and wherein one of the first trenches lies within each of the active areas. The first and second trenches are filled with an insulating layer. Gate electrodes and associated source and drain regions are formed in and on the silicon layer in each active area. An interlevel dielectric layer is deposited overlying the gate electrodes. First contacts are opened through the interlevel dielectric layer to the underlying source and drain regions. A second contact opening is made through the interlevel dielectric layer in each of the active regions wherein the second contact opening contacts both the first trench and one of the second trenches. The first and second contact openings are filled with a conducting layer to complete formation of a silicon-on-insulator device in the fabrication of integrated circuits.
摘要翻译：描述了一种在消除浮体效应的同时形成绝缘体上硅MOSFET的新方法。提供了一种绝缘体上硅衬底，其包括位于硅层下面的氧化物层下面的硅半导体衬底。第一沟槽部分地被蚀刻穿过硅层而不是蚀刻到下面的氧化物层。第二沟槽被完全蚀刻通过硅层到下面的氧化物层，其中第二沟槽分离半导体衬底的有源区域，并且其中第一沟槽中的一个位于每个有源区域内。第一和第二沟槽填充有绝缘层。栅极电极和相关的源极和漏极区域形成在每个有源区域中的硅层中和硅层上。沉积覆盖栅电极的层间电介质层。第一触点通过层间介质层开放到下面的源极和漏极区域。在每个有源区域中通过层间电介质层形成第二接触开口，其中第二接触开口接触第一沟槽和第二沟槽中的一个沟槽。第一和第二接触开口填充有导电层，以在集成电路的制造中完成绝缘体上硅器件的形成。

9. 发明授权

US06582856B1 Simplified method of fabricating a rim phase shift mask 失效
标题翻译：制造轮辋相移掩模的简化方法
公开(公告)号：US06582856B1
公开(公告)日：2003-06-24
申请号：US09513872
申请日：2000-02-28
申请人： Shyue Fong Quek , Ting Cheong Ang , Jun Song , Sang Yee Loong
发明人： Shyue Fong Quek , Ting Cheong Ang , Jun Song , Sang Yee Loong
IPC分类号： G03F900
CPC分类号： G03F1/29
摘要： A new method of fabricating a rim phase shifting mask is achieved. An opaque layer is provided overlying a transparent substrate. A resist layer is deposited overlying the opaque layer. The resist layer is patterned. The opaque layer and the transparent substrate are etched. The resist layer masks this etching. The opaque layer is etched through during this etching. Notches are thereby etched into the transparent substrate at the edges of the opaque layer. These notches will cause a phase shift in incident light relative to incident light passing through regions in the transparent substrate adjacent to the notches. During this etching, an overetch is performed to remove any mask defects in the transparent substrate. Optionally, the notches may be etched into a phase shifting layer overlying the transparent substrate. An etch stopping layer may also be used in the phase shifting layer embodiment.
摘要翻译：实现了制作边缘相移掩模的新方法。在透明基底上方设置不透明层。将抗蚀剂层沉积在不透明层上。抗蚀剂层被图案化。蚀刻不透明层和透明基板。抗蚀剂层掩盖该蚀刻。在该蚀刻期间蚀刻不透明层。因此，在不透明层的边缘处，凹口被蚀刻到透明基板中。这些凹口将引起入射光相对于穿过透明衬底中与凹口相邻的区域的入射光的相移。在该蚀刻期间，执行过蚀刻以去除透明基板中的任何掩模缺陷。可选地，凹口可被蚀刻到覆盖透明衬底的相移层中。在相移层实施例中也可以使用蚀刻停止层。

10. 发明授权

US06492242B1 Method of forming of high K metallic dielectric layer 失效
标题翻译：形成高K金属介电层的方法
公开(公告)号：US06492242B1
公开(公告)日：2002-12-10
申请号：US09609447
申请日：2000-07-03
申请人： Alex See , Cher Liang Randall Cha , Shyuz Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
发明人： Alex See , Cher Liang Randall Cha , Shyuz Fong Quek , Ting Cheong Ang , Wye Boon Loh , Sang Yee Loong , Jun Song , Chua Chee Tee
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/31683
摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.
摘要翻译：在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化，已经开发该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度。第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域，通过覆盖光刻板中的透明区域。该过程还导致在下面的金属层的顶部上形成高K层。

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