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    • 1. 发明授权
    • High pressure N2 RTA process for TiS2 formation
    • 用于TiS2形成的高压N2 RTA工艺
    • US06348413B1
    • 2002-02-19
    • US09157855
    • 1998-09-21
    • Timothy Z. HossainCharles E. May
    • Timothy Z. HossainCharles E. May
    • H01L2144
    • H01L29/665H01L21/28518H01L21/324
    • In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.
    • 在本发明的一个方面中,提供了在通过第二结构与第一结构分离的含硅结构表面的表面上形成硅化物层的方法。 该方法包括以下步骤:在含硅结构的表面上形成硅化物形成层,以及第一和第二结构。 硅化物形成材料层在含有含氮物质的环境中在大于约一个大气压的温度下退火,以在含硅结构的表面上形成硅化物层。 含氮物质与硅化物形成材料反应以阻止第三结构上的硅化物的形成。 该方法在硅化物接触形成期间降低例如晶体管的栅极和源极/漏极区域之间的硅化物桥接的可能性。