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1. 发明申请

US20130306885A1 SOFT ERROR RESISTANT CIRCUITRY 有权
标题翻译：软错误电路
公开(公告)号：US20130306885A1
公开(公告)日：2013-11-21
申请号：US13471854
申请日：2012-05-15
申请人： Richard C. Blish , Timothy Z. Hossain
发明人： Richard C. Blish , Timothy Z. Hossain
IPC分类号： G21F3/00 , H05K13/04 , B05D5/00
CPC分类号： G21F1/10 , G21F1/085 , H01L23/3192 , H01L23/556 , H01L2924/0002 , H05K3/28 , H05K2201/017 , H01L2924/00
摘要： An assembly includes an integrated circuit, a film layer disposed over the integrated circuit and having a thickness of at least 50 microns, and a thermal neutron absorber layer comprising at least 0.5% thermal neutron absorber. The thermal neutron absorber layer can be a glass layer or can include a molding compound.
摘要翻译：组件包括集成电路，设置在集成电路上并具有至少50微米厚度的薄膜层和包含至少0.5％的热中子吸收体的热中子吸收层。热中子吸收剂层可以是玻璃层，也可以包括模塑料。

2. 发明授权

US08946663B2 Soft error resistant circuitry 有权
标题翻译：软电阻电路
公开(公告)号：US08946663B2
公开(公告)日：2015-02-03
申请号：US13471854
申请日：2012-05-15
申请人： Richard C. Blish , Timothy Z. Hossain
发明人： Richard C. Blish , Timothy Z. Hossain
IPC分类号： H01L23/552
CPC分类号： G21F1/10 , G21F1/085 , H01L23/3192 , H01L23/556 , H01L2924/0002 , H05K3/28 , H05K2201/017 , H01L2924/00
摘要： An assembly includes an integrated circuit, a film layer disposed over the integrated circuit and having a thickness of at least 50 microns, and a thermal neutron absorber layer comprising at least 0.5% thermal neutron absorber. The thermal neutron absorber layer can be a glass layer or can include a molding compound.
摘要翻译：组件包括集成电路，设置在集成电路上并具有至少50微米厚度的薄膜层和包含至少0.5％的热中子吸收体的热中子吸收层。热中子吸收剂层可以是玻璃层，也可以包括模塑料。

3. 发明授权

US08232515B2 Imaging device having a radiation detecting structure disposed at a semiconductor substrate with a thermalizing material and a first radiation-reactive material sensitive to neutron radiation 有权
标题翻译：具有放射线检测结构的成像装置，其设置在具有热化材料的半导体衬底和对中子辐射敏感的第一辐射反应性材料
公开(公告)号：US08232515B2
公开(公告)日：2012-07-31
申请号：US12472735
申请日：2009-05-27
申请人： Timothy Z. Hossain , Patrick Mark Clopton , Clayton Fullwood , Dan E. Posey
发明人： Timothy Z. Hossain , Patrick Mark Clopton , Clayton Fullwood , Dan E. Posey
IPC分类号： H01L31/00
CPC分类号： H01L27/14676 , H01L27/14609 , H01L27/1462
摘要： An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.
摘要翻译：适合于检测某些成像粒子并记录成像粒子的检测的成像装置，因此可以包括某些记录装置，例如电荷存储结构。

4. 发明授权

US5523597A Electronic device achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10 失效
标题翻译：实现基本上不含硼-10的硼基化合物的α粒子排放降低的电子装置
公开(公告)号：US5523597A
公开(公告)日：1996-06-04
申请号：US342521
申请日：1994-11-21
申请人： Robert C. Baumann , Timothy Z. Hossain
发明人： Robert C. Baumann , Timothy Z. Hossain
IPC分类号： H01L21/316 , H01L21/8242 , H01L23/29 , H01L23/31 , H01L23/556 , H01L27/10 , H01L27/108 , H01L27/148
CPC分类号： H01L23/556 , H01L2924/0002 , Y10S257/921 , Y10S438/953
摘要： Reduced soft errors in charge-sensitive circuit elements such as volatile memory cells 200 occur by using boron-11 to the exclusion of boron-10 or essentially free of boron-10 in borosilicate glass 230, 240 deposited on the substrate 206 directly over the arrays of memory cells. Boron-10 exhibits a high likelihood of fission to release a 1.47 MeV alpha particle upon capture of a naturally occurring cosmic ray neutron. This capture occurs frequently in boron-10 because of its high neutron capture cross-section. Boron-11 does not fission.
摘要翻译：电荷敏感电路元件如易失性存储单元200中的软误差降低是通过使用硼-11来排除在基板206上直接沉积在阵列上的硼硅玻璃230,240中的硼-10或基本上不含硼-10的。的记忆细胞。 Boron-10在捕获天然存在的宇宙射线中子时表现出很高的裂变可能性释放1.47MeVα粒子。这种捕获在硼-10中频繁发生，因为其具有高中子俘获截面。硼11不裂变。

5. 发明授权

US08436289B1 System and method for detecting particles with a semiconductor device 有权
标题翻译：用半导体器件检测粒子的系统和方法
公开(公告)号：US08436289B1
公开(公告)日：2013-05-07
申请号：US12844888
申请日：2010-07-28
申请人： Timothy Z. Hossain , Patrick Mark Clopton , Christopher Michael Foster , Christopher F. Lyons , Clayton Fullwood , Greg Alan Goodwin , Dan E. Posey
发明人： Timothy Z. Hossain , Patrick Mark Clopton , Christopher Michael Foster , Christopher F. Lyons , Clayton Fullwood , Greg Alan Goodwin , Dan E. Posey
IPC分类号： H01L31/00
CPC分类号： H01L31/118 , H01L27/14609 , H01L27/1462 , H01L27/14676
摘要： Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle.
摘要翻译：本文描述了用于检测核材料发射的颗粒的系统和方法。该系统包括用于检测从核材料发射的颗粒的一个或多个半导体器件。半导体器件可以包括包含多个层的电荷存储元件。通过电介质层包封在顶部和底部的非导电电荷存储层安装在基底上。至少一个顶部半导体层可以放置在顶部介电层的顶部上。与颗粒（例如从核材料发射的中子）反应的反应性材料可以结合到顶部半导体层中。当反应性材料与从核材料发射的颗粒反应时，产生可以改变电荷存储层并能够检测颗粒的离子。

6. 发明申请

US20130032725A1 IMAGING DEVICE 有权
公开(公告)号：US20130032725A1
公开(公告)日：2013-02-07
申请号：US13556819
申请日：2012-07-24
申请人： Timothy Z. Hossain , Patrick Mark Clopton , Clayton Fullwood , Dan E. Posey
发明人： Timothy Z. Hossain , Patrick Mark Clopton , Clayton Fullwood , Dan E. Posey
IPC分类号： G01T3/08
CPC分类号： H01L27/14676 , H01L27/14609 , H01L27/1462
摘要： An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

7. 发明授权

US5707603A Pyridine complexing agents and targeting immunoreagents useful in therapeutic and diagnostic compositions 失效
标题翻译：吡啶络合剂和靶向免疫反应剂可用于治疗和诊断组合物
公开(公告)号：US5707603A
公开(公告)日：1998-01-13
申请号：US375276
申请日：1995-01-19
申请人： John L. Toner , David A. Hilborn , Bruce J. Murray , Timothy Z. Hossain , Robert A. Snow , Ashis K. Saha , Richard Philion , Clyde W. Shearman , Chandra Shah
发明人： John L. Toner , David A. Hilborn , Bruce J. Murray , Timothy Z. Hossain , Robert A. Snow , Ashis K. Saha , Richard Philion , Clyde W. Shearman , Chandra Shah
IPC分类号： A61K47/48 , A61K49/00 , A61K51/00 , A61K51/10 , C07D213/38 , C07D213/53 , C07D213/61 , C07D213/74 , C07D213/77 , C07D401/14 , C07D403/10 , C07D471/04 , C07D471/14 , C07D471/18 , C07D487/22 , G01N33/534 , A61K51/04 , C07D213/22 , C07F13/00
CPC分类号： C07D213/53 , A61K47/48169 , A61K47/48707 , A61K51/1054 , A61K51/1063 , A61K51/1093 , C07D213/61 , C07D213/77 , C07D471/04
摘要： The invention provides targeting radioactive immunoreagents comprising a metal radionuclide ion, a complexing agent having structure A-I, as defined in the specification, and an immunoreactive group covalently bonded to the complexing agent. The present invention also provides novel complexing agents having the structure A-I, as defined in the specification. The targeting radioactive immunoreagents are particularly useful in therapeutic and diagnostic imaging compositions and methods.
摘要翻译：本发明提供靶向的放射免疫试剂，其包含金属放射性核素离子，如说明书中所定义的具有结构A-1的络合剂和共价键合到络合剂上的免疫反应性基团。本发明还提供具有本说明书中定义的结构A-1的新型络合剂。靶向放射免疫试剂在治疗和诊断成像组合物和方法中特别有用。

8. 发明授权

US5367080A Complexing agents and targeting radioactive immunoreagents useful in therapeutic and diagnostic imaging compositions and methods 失效
标题翻译：复合剂和靶向用于治疗和诊断成像组合物和方法的放射免疫试剂
公开(公告)号：US5367080A
公开(公告)日：1994-11-22
申请号：US784333
申请日：1991-10-29
申请人： John L. Toner , David A. Hilborn , Bruce J. Murray , Timothy Z. Hossain
发明人： John L. Toner , David A. Hilborn , Bruce J. Murray , Timothy Z. Hossain
IPC分类号： A61K47/48 , A61K49/00 , A61K51/00 , A61K51/10 , C07D213/38 , C07D213/53 , C07D213/61 , C07D213/74 , C07D213/77 , C07D401/14 , C07D403/10 , C07D471/04 , C07D471/14 , C07D471/18 , C07D487/22 , G01N33/534 , C07D213/22
CPC分类号： C07D213/53 , A61K47/48169 , A61K47/48707 , A61K51/1054 , A61K51/1063 , A61K51/1093 , C07D213/61 , C07D213/77 , C07D471/04
摘要： A targeting radioactive immunoreagent comprising a compound having the structure ##STR1##
摘要翻译：靶向放射免疫试剂，其包含具有结构的化合物

9. 发明授权

US07902520B2 Radiation detecting electronic device and methods of operating 有权
标题翻译：辐射检测电子设备及其操作方法
公开(公告)号：US07902520B2
公开(公告)日：2011-03-08
申请号：US12340288
申请日：2008-12-19
申请人： Timothy Z. Hossain , Patrick Mark Clopton , Clayton Fullwood , Dan E. Posey
发明人： Timothy Z. Hossain , Patrick Mark Clopton , Clayton Fullwood , Dan E. Posey
IPC分类号： G01T1/00
CPC分类号： G01T1/00
摘要： A method of operating an electronic device including determining an initial charge level at a non-volatile charge storage structure of a radiation-sensitive device including a radiation-reactive material and determining if a first radiation event has occurred based upon the non-volatile charge storage device having a different charge level than the initial charge level. The method further includes identifying the first radiation event as associated with either a first type of radiation or a second type of radiation based upon the different charge level.
摘要翻译：一种操作电子设备的方法，包括在包括辐射反应性材料的辐射敏感设备的非易失性电荷存储结构中确定初始电荷水平，并且基于非易失性电荷存储确定是否已经发生第一辐射事件具有与初始充电电平不同的充电电平的装置。该方法还包括基于不同的充电水平来识别与第一类型的辐射或第二类型的辐射相关联的第一辐射事件。

10. 发明授权

US06348413B1 High pressure N2 RTA process for TiS2 formation 有权
标题翻译：用于TiS2形成的高压N2 RTA工艺
公开(公告)号：US06348413B1
公开(公告)日：2002-02-19
申请号：US09157855
申请日：1998-09-21
申请人： Timothy Z. Hossain , Charles E. May
发明人： Timothy Z. Hossain , Charles E. May
IPC分类号： H01L2144
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/324
摘要： In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.
摘要翻译：在本发明的一个方面中，提供了在通过第二结构与第一结构分离的含硅结构表面的表面上形成硅化物层的方法。该方法包括以下步骤：在含硅结构的表面上形成硅化物形成层，以及第一和第二结构。硅化物形成材料层在含有含氮物质的环境中在大于约一个大气压的温度下退火，以在含硅结构的表面上形成硅化物层。含氮物质与硅化物形成材料反应以阻止第三结构上的硅化物的形成。该方法在硅化物接触形成期间降低例如晶体管的栅极和源极/漏极区域之间的硅化物桥接的可能性。

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