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1. 发明申请

US20090208865A1 PHOTOLITHOGRAPHY FOCUS IMPROVEMENT BY REDUCTION OF AUTOFOCUS RADIATION TRANSMISSION INTO SUBSTRATE 审中-公开
标题翻译：通过减少自适应辐射传输到基板中的光刻技术改进
公开(公告)号：US20090208865A1
公开(公告)日：2009-08-20
申请号：US12033303
申请日：2008-02-19
申请人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

2. 发明申请

US20110256486A1 PHOTOLITHOGRAPHY FOCUS IMPROVEMENT BY REDUCTION OF AUTOFOCUS RADIATION TRANSMISSION INTO SUBSTRATE 有权
标题翻译：通过减少自适应辐射传输到基板中的光刻技术改进
公开(公告)号：US20110256486A1
公开(公告)日：2011-10-20
申请号：US13158901
申请日：2011-06-13
申请人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

3. 发明授权

US07439302B2 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
标题翻译：低折射率聚合物作为含硅光致抗蚀剂的底层
公开(公告)号：US07439302B2
公开(公告)日：2008-10-21
申请号：US11195566
申请日：2005-08-02
申请人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
IPC分类号： G03F7/11 , C08F8/14 , C08F8/32
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。本发明的聚合物的实例包括：其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机部分; R 2是氢或甲基; X，Y，Z为0〜7的整数，Y + Z为7以下。上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

4. 发明授权

US07326523B2 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
标题翻译：低折射率聚合物作为含硅光致抗蚀剂的底层
公开(公告)号：US07326523B2
公开(公告)日：2008-02-05
申请号：US11013971
申请日：2004-12-16
申请人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean D. Burns , Mahmoud Khojasteh
IPC分类号： G03F7/20 , G03F7/30 , G03F7/36 , G03C1/835 , G03C1/825
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

5. 发明授权

US08916337B2 Dual hard mask lithography process 有权
标题翻译：双硬掩模光刻工艺
公开(公告)号：US08916337B2
公开(公告)日：2014-12-23
申请号：US13402068
申请日：2012-02-22
申请人： John C. Arnold , Sean D. Burns , Steven J. Holmes , David V. Horak , Muthumanickam Sankarapandian , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Steven J. Holmes , David V. Horak , Muthumanickam Sankarapandian , Yunpeng Yin
IPC分类号： G03F7/26
CPC分类号： H01L23/5226 , G03F7/0035 , G03F7/091 , G03F7/094 , H01L21/0332 , H01L21/0338 , H01L21/3081 , H01L21/3088 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L2924/0002 , Y10T428/24355 , H01L2924/00
摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.
摘要翻译：在互连级介质层上的第一金属硬掩模层用线图案图案化。在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

6. 发明授权

US08652762B2 Organic graded spin on BARC compositions for high NA lithography 有权
标题翻译：用于高NA光刻的BARC组合物上的有机分级纺丝
公开(公告)号：US08652762B2
公开(公告)日：2014-02-18
申请号：US13423838
申请日：2012-03-19
申请人： Dario L. Goldfarb , Libor Vyklicky , Sean D. Burns , David R. Medeiros , Daniel P. Sanders , Robert D. Allen
发明人： Dario L. Goldfarb , Libor Vyklicky , Sean D. Burns , David R. Medeiros , Daniel P. Sanders , Robert D. Allen
IPC分类号： H01L21/312 , H01L29/02 , G03F7/38
CPC分类号： G03F7/091
摘要： An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
摘要翻译：提供了包含至少两种聚合物组分并且包含发色团部分和透明部分的抗反射涂层。抗反射涂层可用于提供在光致抗蚀剂层下形成的单层复合渐变抗反射涂层。

7. 发明授权

US08470711B2 Tone inversion with partial underlayer etch for semiconductor device formation 失效
标题翻译：用于半导体器件形成的部分底层蚀刻的色调反演
公开(公告)号：US08470711B2
公开(公告)日：2013-06-25
申请号：US12952248
申请日：2010-11-23
申请人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
IPC分类号： H01L21/44
CPC分类号： H01L23/00 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
摘要翻译：用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

8. 发明申请

US20120244711A1 SIDEWALL IMAGE TRANSFER PROCESS 有权
标题翻译：边框图像传输过程
公开(公告)号：US20120244711A1
公开(公告)日：2012-09-27
申请号：US13069536
申请日：2011-03-23
申请人： Yunpeng Yin , John C. Arnold , Matthew E. Colburn , Sean D. Burns
发明人： Yunpeng Yin , John C. Arnold , Matthew E. Colburn , Sean D. Burns
IPC分类号： H01L21/31
CPC分类号： H01L21/0337 , H01L21/3086 , H01L21/31144 , H01L21/32139
摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.
摘要翻译：提出了一种执行侧壁间隔成像器传输的改进方法。该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

9. 发明授权

US08084185B2 Substrate planarization with imprint materials and processes 有权
标题翻译：基板平面化与压印材料和工艺
公开(公告)号：US08084185B2
公开(公告)日：2011-12-27
申请号：US12350250
申请日：2009-01-08
申请人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
发明人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/027 , G03F7/094 , G03F7/168
摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking. The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.
摘要翻译：本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。在基板上形成平坦化组合物的平坦化层。平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。基本平坦的表面与平坦化层接触。平坦化层通过暴露于第一辐射或通过烘烤而固化。然后去除基本平坦的表面。在平坦化层上形成光致抗蚀剂层。将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。然后将浮雕图像转移到基底中。

10. 发明授权

US07816069B2 Graded spin-on organic antireflective coating for photolithography 有权
标题翻译：梯度旋涂有机抗反射涂层用于光刻
公开(公告)号：US07816069B2
公开(公告)日：2010-10-19
申请号：US11473338
申请日：2006-06-23
申请人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
发明人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
IPC分类号： G03F7/11 , G03C1/00 , C08L29/04 , C08L27/12
CPC分类号： G03F7/091 , Y10S438/952
摘要： An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
摘要翻译：提供了包含至少两种聚合物组分并且包含发色团部分和透明部分的抗反射涂层。抗反射涂层可用于提供在光致抗蚀剂层下形成的单层复合渐变抗反射涂层。

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