专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08410665B2 MEMS kinetic energy conversion 有权
标题翻译： MEMS动能转换
公开(公告)号：US08410665B2
公开(公告)日：2013-04-02
申请号：US12977304
申请日：2010-12-23
申请人： Tien-Kan Chung , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
发明人： Tien-Kan Chung , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
IPC分类号： H01L41/08
CPC分类号： H01L41/311 , B81B3/0021 , B81C1/00 , H01L41/113 , H01L41/1136 , H01L41/1138 , H01L41/22 , H01L41/312 , H02K35/04 , H02N2/186 , Y10T29/42 , Y10T29/49005 , Y10T29/49073 , Y10T29/49075 , Y10T29/49146
摘要： The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
摘要翻译：本公开提供了微型装置。该装置具有微电子机械系统（MEMS）可移动结构，MEMS可移动结构上的多个金属环以及MEMS可移动结构上方的压电元件。前侧和后侧封盖晶片被结合到MEMS结构，前侧和后侧封盖晶片封装MEMS可移动结构，多个金属环和压电元件。该装置还包括设置在多个金属环上的前侧封盖晶片上的磁体。

2. 发明申请

US20120161582A1 MEMS KINETIC ENERGY CONVERSION 有权
标题翻译： MEMS动力转换
公开(公告)号：US20120161582A1
公开(公告)日：2012-06-28
申请号：US12977304
申请日：2010-12-23
申请人： TIEN-KAN CHUNG , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
发明人： TIEN-KAN CHUNG , Chung-Hsien Lin , Yao-Te Huang , Chia-Hua Chu , Chia-Ming Hung , Wen-Chuan Tai , Chang-Yi Yang
IPC分类号： H02N2/18 , H01L41/22 , F03G7/08
CPC分类号： H01L41/311 , B81B3/0021 , B81C1/00 , H01L41/113 , H01L41/1136 , H01L41/1138 , H01L41/22 , H01L41/312 , H02K35/04 , H02N2/186 , Y10T29/42 , Y10T29/49005 , Y10T29/49073 , Y10T29/49075 , Y10T29/49146
摘要： The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
摘要翻译：本公开提供了微型装置。该装置具有微电子机械系统（MEMS）可移动结构，MEMS可移动结构上的多个金属环以及MEMS可移动结构上方的压电元件。前侧和后侧封盖晶片被结合到MEMS结构，前侧和后侧封盖晶片封装MEMS可移动结构，多个金属环和压电元件。该装置还包括设置在多个金属环上的前侧封盖晶片上的磁体。

3. 发明授权

US08723343B2 Sensor with energy-harvesting device 有权
标题翻译：带有能量收集装置的传感器
公开(公告)号：US08723343B2
公开(公告)日：2014-05-13
申请号：US13047502
申请日：2011-03-14
申请人： Tien-Kan Chung , Wen-Chuan Tai , Yao-Te Huang , Hsin-Ting Huang , Shang-Ying Tsai , Chang-Yi Yang , Chia-Ming Hung
发明人： Tien-Kan Chung , Wen-Chuan Tai , Yao-Te Huang , Hsin-Ting Huang , Shang-Ying Tsai , Chang-Yi Yang , Chia-Ming Hung
IPC分类号： H02P9/04
CPC分类号： H02K35/04 , B81B7/02 , G01P15/11 , H01F5/003 , H02K15/00 , H02M7/04 , H02N1/006 , Y10T29/49009
摘要： In some embodiments of the present disclosure, a sensor comprises a substrate, a sensor element and an energy-harvesting device. The sensor element comprises a plate, and the plate is moveable with respect to the substrate. The energy-harvesting device is formed on the plate of the sensor element.
摘要翻译：在本公开的一些实施例中，传感器包括基板，传感器元件和能量收集装置。传感器元件包括板，并且板可相对于基板移动。能量收集装置形成在传感器元件的板上。

4. 发明授权

US08232614B1 Package systems having a conductive element through a substrate thereof and manufacturing methods of the same 有权
标题翻译：具有通过其基材的导电元件的封装体系及其制造方法
公开(公告)号：US08232614B1
公开(公告)日：2012-07-31
申请号：US13042733
申请日：2011-03-08
申请人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin , Chia-Ming Hung , Jung-Huei Peng , Yi Heng Tsai , Jiou-Kang Lee
发明人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin , Chia-Ming Hung , Jung-Huei Peng , Yi Heng Tsai , Jiou-Kang Lee
IPC分类号： H01L21/52
CPC分类号： B81B7/007 , B81B2207/096
摘要： A package system includes a first substrate structure including at least one first conductive structure that is disposed over a first substrate. A second substrate structure includes a second substrate. The second substrate structure is bonded with the first substrate structure. The at least one first conductive structure is electrically coupled with the second substrate through at least one germanium-containing layer.
摘要翻译：封装系统包括第一衬底结构，其包括设置在第一衬底上的至少一个第一导电结构。第二衬底结构包括第二衬底。第二衬底结构与第一衬底结构结合。所述至少一个第一导电结构通过至少一个含锗层与所述第二衬底电耦合。

5. 发明授权

US08878312B2 Electrical bypass structure for MEMS device 有权
标题翻译： MEMS器件的电气旁路结构
公开(公告)号：US08878312B2
公开(公告)日：2014-11-04
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H01L29/84 , B81C1/00
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译：公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

6. 发明授权

US09365416B2 Structure and method for motion sensor 有权
标题翻译：运动传感器的结构和方法
公开(公告)号：US09365416B2
公开(公告)日：2016-06-14
申请号：US13433906
申请日：2012-03-29
申请人： Chia-Pao Shu , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen
发明人： Chia-Pao Shu , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen
IPC分类号： H01L29/84 , B81C1/00
CPC分类号： B81C1/00269 , B81C2203/036
摘要： The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.
摘要翻译：本公开提供了运动传感器结构的一个实施例。运动传感器结构包括其上形成有集成电路的第一基板; 第二基板，其从第一表面接合到第一基板，其中第二基板包括形成在其上的运动传感器; 以及第三基板，其接合到所述第二基板的第二表面，其中所述第三基板包括与所述运动传感器对准的凹陷区域。

7. 发明申请

US20130043510A1 STRUCTURE AND METHOD FOR MOTION SENSOR 有权
标题翻译：运动传感器的结构和方法
公开(公告)号：US20130043510A1
公开(公告)日：2013-02-21
申请号：US13433906
申请日：2012-03-29
申请人： Chia-Pao Shu , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen
发明人： Chia-Pao Shu , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： B81C1/00269 , B81C2203/036
摘要： The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.
摘要翻译：本公开提供了运动传感器结构的一个实施例。运动传感器结构包括其上形成有集成电路的第一基板; 第二基板，其从第一表面接合到第一基板，其中第二基板包括形成在其上的运动传感器; 以及第三基板，其接合到所述第二基板的第二表面，其中所述第三基板包括与所述运动传感器对准的凹陷区域。

8. 发明授权

US08716852B2 Micro-electro mechanical systems (MEMS) having outgasing prevention structures and methods of forming the same 有权
标题翻译：具有防止结构的微机电系统（MEMS）及其形成方法
公开(公告)号：US08716852B2
公开(公告)日：2014-05-06
申请号：US13399903
申请日：2012-02-17
申请人： Chia-Pao Shu , Chia-Ming Hung , Wen-Chuan Tai , Hung-Sen Wang , Hsiang-Fu Chen , Alex Kalnitsky
发明人： Chia-Pao Shu , Chia-Ming Hung , Wen-Chuan Tai , Hung-Sen Wang , Hsiang-Fu Chen , Alex Kalnitsky
IPC分类号： H01L23/26 , H01L21/54
CPC分类号： B81B7/0032 , B81B7/0038 , B81C1/00261 , H01L2924/0002 , H01L2924/00
摘要： A device includes a capping substrate bonded with a substrate structure. The substrate structure includes an integrated circuit structure. The integrated circuit structure includes a top metallic layer disposed on an outgasing prevention structure. At least one micro-electro mechanical system (MEMS) device is disposed over the top metallic layer and the outgasing prevention structure.
摘要翻译：一种器件包括与衬底结构接合的封盖衬底。衬底结构包括集成电路结构。集成电路结构包括设置在防止结构上的顶部金属层。至少一个微电子机械系统（MEMS）装置设置在顶部金属层和防止外部结构上。

9. 发明申请

US20120223613A1 ELECTRICAL BYPASS STRUCTURE FOR MEMS DEVICE 有权
标题翻译：用于MEMS器件的电子旁路结构
公开(公告)号：US20120223613A1
公开(公告)日：2012-09-06
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H02N11/00 , H05K3/36
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译：公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

10. 发明授权

US08723280B2 Hybrid MEMS bump design to prevent in-process and in-use stiction 有权
标题翻译：混合MEMS凸块设计，以防止在进程和使用中的粘滞
公开(公告)号：US08723280B2
公开(公告)日：2014-05-13
申请号：US13563935
申请日：2012-08-01
申请人： Chia-Pao Shu , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen
发明人： Chia-Pao Shu , Wen-Chuan Tai , Chia-Ming Hung , Hsiang-Fu Chen
IPC分类号： H01L29/82
CPC分类号： B81C1/00015 , B81B3/00 , B81B3/001 , B81B7/02 , B81C99/00 , H01L29/84
摘要： A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.
摘要翻译：提供了一种用于形成MEMS器件的微电子机械系统（MEMS）器件和方法。通过支点将检测质量悬挂在基板的表面上方的距离处。一对感测板位于支撑体的相对侧上的基板上。金属凸块与每个感测板相关联并且定位在检验质量块的相应远端附近。每个金属凸起从衬底的表面延伸，并且通常抑制与校准质量相关联的电荷诱导的静电。氧化物凸块与一对感测板中的每一个相关联并且位于相应的感测板和支点之间。每个氧化物凸块从衬底的第一表面延伸出比金属凸块更大的距离，并且通过在冲击载荷期间防止校准质量块的远端接触金属凸块而用作减震器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式