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1. 发明授权

US08232614B1 Package systems having a conductive element through a substrate thereof and manufacturing methods of the same 有权
标题翻译：具有通过其基材的导电元件的封装体系及其制造方法
公开(公告)号：US08232614B1
公开(公告)日：2012-07-31
申请号：US13042733
申请日：2011-03-08
申请人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin , Chia-Ming Hung , Jung-Huei Peng , Yi Heng Tsai , Jiou-Kang Lee
发明人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin , Chia-Ming Hung , Jung-Huei Peng , Yi Heng Tsai , Jiou-Kang Lee
IPC分类号： H01L21/52
CPC分类号： B81B7/007 , B81B2207/096
摘要： A package system includes a first substrate structure including at least one first conductive structure that is disposed over a first substrate. A second substrate structure includes a second substrate. The second substrate structure is bonded with the first substrate structure. The at least one first conductive structure is electrically coupled with the second substrate through at least one germanium-containing layer.
摘要翻译：封装系统包括第一衬底结构，其包括设置在第一衬底上的至少一个第一导电结构。第二衬底结构包括第二衬底。第二衬底结构与第一衬底结构结合。所述至少一个第一导电结构通过至少一个含锗层与所述第二衬底电耦合。

2. 发明授权

US08368152B2 MEMS device etch stop 有权
标题翻译： MEMS器件蚀刻停止
公开(公告)号：US08368152B2
公开(公告)日：2013-02-05
申请号：US13089027
申请日：2011-04-18
申请人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
IPC分类号： H01L29/84 , H01L27/14 , H01L21/00 , G01P15/08
CPC分类号： H01L29/84 , B81B2203/0307 , B81C1/00039 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
摘要翻译：本公开提供了一种微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括衬底，在衬底上方的电介质层，在电介质层上方的蚀刻停止层，以及在电介质层上方的两个锚栓，两个锚栓每个接触蚀刻停止层或顶部金属层，设置在电介质层的上方。该装置还包括一个MEMS结构层，该MEMS结构层设置在形成在两个锚栓之间的空腔之上，并且位于蚀刻停止层上方，从牺牲层释放出来。

3. 发明申请

US20120261830A1 MEMS DEVICE ETCH STOP 有权
标题翻译： MEMS器件ETCH STOP
公开(公告)号：US20120261830A1
公开(公告)日：2012-10-18
申请号：US13089027
申请日：2011-04-18
申请人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L29/84 , B81B2203/0307 , B81C1/00039 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
摘要翻译：本公开提供了一种微机电系统（MEMS）装置及其制造方法。在一个实施例中，MEMS器件包括衬底，在衬底上方的电介质层，在电介质层上方的蚀刻停止层，以及在电介质层上方的两个锚栓，两个锚栓每个接触蚀刻停止层或顶部金属层，设置在电介质层的上方。该器件还包括一个MEMS结构层，该MEMS结构层设置在形成在两个锚栓之间的空腔之上，并且位于蚀刻停止层上方，从牺牲层释放出来。

4. 发明授权

US09065358B2 MEMS structure and method of forming same 有权
标题翻译： MEMS结构及其形成方法
公开(公告)号：US09065358B2
公开(公告)日：2015-06-23
申请号：US13219927
申请日：2011-08-29
申请人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： G01P15/125 , H02N1/00 , G01P15/08
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces.
摘要翻译：减少或消除静摩擦的微机电系统（MEMS）装置包括至少部分地悬挂在衬底上并具有至少一个自由度的衬底和可移动元件。突起从衬底延伸并且构造成当移动元件以至少一个自由度移动时接触可移动元件。突起包括相对于氧化硅表面具有低表面能的表面。突起可以耦合到电压电位节点以避免或抵消静电力。

5. 发明申请

US20130015743A1 MEMS Structure And Method Of Forming Same 有权
标题翻译： MEMS结构及其形成方法
公开(公告)号：US20130015743A1
公开(公告)日：2013-01-17
申请号：US13219927
申请日：2011-08-29
申请人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： H02N1/00 , H01S4/00
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces.
摘要翻译：减少或消除静摩擦的微机电系统（MEMS）装置包括至少部分地悬挂在衬底上并具有至少一个自由度的衬底和可移动元件。突起从衬底延伸并且构造成当移动元件以至少一个自由度移动时接触可移动元件。突起包括相对于氧化硅表面具有低表面能的表面。突起可以耦合到电压电位节点以避免或抵消静电力。

6. 发明授权

US08343789B2 Microstructure device with an improved anchor 有权
标题翻译：具有改进锚的微结构装置
公开(公告)号：US08343789B2
公开(公告)日：2013-01-01
申请号：US12858202
申请日：2010-08-17
申请人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
发明人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
IPC分类号： H01L21/02
CPC分类号： H01L29/84 , B81B2203/0109 , B81B2203/0118 , B81B2203/0307 , B81C1/00571
摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
摘要翻译：本公开提供了一种制造具有改进的锚的微结构装置的系统。利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。然后将微结构器件层与空腔上的氧化物层结合。形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。在一个实施例中，外部边界基本上在空腔的侧壁的外侧。然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

7. 发明申请

US20120043626A1 MICROSTRUCTURE DEVICE WITH AN IMPROVED ANCHOR 有权
标题翻译：具有改进锚杆的微结构装置
公开(公告)号：US20120043626A1
公开(公告)日：2012-02-23
申请号：US12858202
申请日：2010-08-17
申请人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
发明人： Chung-Hsien Lin , Chun-Wen Cheng , Chia-Hua Chu , Yi Heng Tsai
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： H01L29/84 , B81B2203/0109 , B81B2203/0118 , B81B2203/0307 , B81C1/00571
摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
摘要翻译：本公开提供了一种制造具有改进的锚的微结构装置的系统。利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。然后将微结构器件层与空腔上的氧化物层结合。形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。在一个实施例中，外部边界基本上在空腔的侧壁的外侧。然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

8. 发明申请

US20120223613A1 ELECTRICAL BYPASS STRUCTURE FOR MEMS DEVICE 有权
标题翻译：用于MEMS器件的电子旁路结构
公开(公告)号：US20120223613A1
公开(公告)日：2012-09-06
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H02N11/00 , H05K3/36
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译：公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

9. 发明授权

US08878312B2 Electrical bypass structure for MEMS device 有权
标题翻译： MEMS器件的电气旁路结构
公开(公告)号：US08878312B2
公开(公告)日：2014-11-04
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H01L29/84 , B81C1/00
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译：公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

10. 发明授权

US09085456B2 Support structure for TSV in MEMS structure 有权
标题翻译：支持结构的TSV在MEMS结构
公开(公告)号：US09085456B2
公开(公告)日：2015-07-21
申请号：US13471229
申请日：2012-05-14
申请人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
发明人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
IPC分类号： H01L29/82 , H01L29/84 , H01L23/10 , B81C1/00
CPC分类号： B81B7/007 , B81C1/0023 , B81C1/00238 , B81C1/00301 , B81C2203/0792
摘要： An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.
摘要翻译：一个实施例是用于形成微机电系统（MEMS）装置的方法。该方法包括在第一衬底上形成MEMS结构，其中MEMS结构包括可移动元件; 在所述第一基板上形成接合结构; 以及在所述第一基板上形成支撑结构，其中所述支撑结构从所述接合结构突出。该方法还包括将MEMS结构接合到第二衬底; 以及在所述第二基板的背面上形成通过（TSV）的贯穿基板，其中所述上覆的TSV与所述接合结构和所述支撑结构对准。

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