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1. 发明授权

US5436452A Uncooled tunneling infrared sensor 失效
标题翻译：未冷却隧道红外传感器
公开(公告)号：US5436452A
公开(公告)日：1995-07-25
申请号：US79507
申请日：1993-06-21
申请人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Richard E. Muller , Paul D. Maker
发明人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Richard E. Muller , Paul D. Maker
IPC分类号： G01J1/42 , G01J5/00 , G01J5/42 , G01Q10/00 , G01Q30/10 , G01Q60/16 , G01Q70/14 , G01Q70/18 , H01J37/00
CPC分类号： G01J5/42 , B82Y35/00 , G01J2005/425
摘要： An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
摘要翻译：非制冷红外隧道传感器，其中唯一的移动部分是偏转成与通过新颖的光刻工艺制备的微机加工的硅尖端电极接触的膜片。类似地制备的偏转电极采用静电力来控制氮化硅，平膜片的偏转。振膜表现出高谐振频率，可降低传感器对振动的敏感度。高带宽反馈电路通过调节偏转电压来控制隧穿电流，以保持膜的恒定偏转。所得到的红外传感器可以小于100μm的像素尺寸。使用波纹膜实现替代实施例，以允许大的偏转而不需要复杂的钳位和高偏转电压。替代实施例还在膜中采用针孔以适应环境温度变化和密封室，以消除隧道电极的环境污染和对传感器的不合需要的声耦合。

2. 发明授权

US5393634A Continuous phase and amplitude holographic elements 失效
标题翻译：连续相位和幅度全息元件
公开(公告)号：US5393634A
公开(公告)日：1995-02-28
申请号：US71131
申请日：1993-05-27
申请人： Paul D. Maker , Richard E. Muller
发明人： Paul D. Maker , Richard E. Muller
IPC分类号： G03F7/00 , G03H1/02 , G03H1/04 , H01J37/22 , G03C5/00 , G03H5/00
CPC分类号： G03F7/001 , G03H1/08 , G03H1/0891 , G03H2001/0292 , G03H2001/0478 , G03H2001/2615 , G03H2224/04 , G03H2240/42 , G03H2240/43 , G03H2260/63 , H01J2237/3175 , Y10S430/143
摘要： A method for producing a phase hologram using e-beam lithography provides n-ary levels of phase and amplitude by first producing an amplitude hologram on a transparent substrate by e-beam exposure of a resist over a film of metal by exposing n.ltoreq.m.times.m spots of an array of spots for each pixel, where the spots are randomly selected in proportion to the amplitude assigned to each pixel, and then after developing and etching the metal film producing a phase hologram by e-beam lithography using a low contrast resist, such as PMMA, and n-ary levels of low doses less than approximately 200 .mu.C/cm.sup.2 and preferably in the range of 20-200 .mu.C/cm.sup.2, and aggressive development using pure acetone for an empirically determined time (about 6 sec.) controlled to within 1/10 sec. to produce partial development of each pixel in proportion to the n-ary level of dose assigned to it.
摘要翻译：使用电子束光刻产生相位全息图的方法通过首先通过在金属膜上曝光抗蚀剂而在透明衬底上产生振幅全息图，从而提供相位和幅度的n阶电平，每个像素的点阵列的m×m个点，其中斑点随分配给每个像素的幅度成比例地随机选择，然后在通过使用低对比度抗蚀剂的电子束光刻产生相位全息图的金属膜显影和蚀刻之后，例如PMMA，低剂量低于约200μC/ cm2，优选在20-200μC/ cm2范围内的n-ary水平，以及使用纯丙酮进行经验确定的时间（约6秒）。）控制在1/10秒内。以与分配给其的剂量的n-ary水平成比例地产生每个像素的部分发育。

3. 发明授权

US06522403B2 Computed tomography imaging spectrometer (CTIS) with 2D reflective grating for ultraviolet to long-wave infrared detection especially useful for surveying transient events 失效
公开(公告)号：US06522403B2
公开(公告)日：2003-02-18
申请号：US09734242
申请日：2000-12-04
申请人： Daniel W. Wilson , Paul D. Maker , Richard E. Muller , Pantazis Z. Mouroulis
发明人： Daniel W. Wilson , Paul D. Maker , Richard E. Muller , Pantazis Z. Mouroulis
IPC分类号： G01J318
CPC分类号： G01J3/02 , G01J3/0208 , G01J3/18 , G01J3/2823 , G02B5/1861
摘要： The optical system of this invention is an unique type of imaging spectrometer, i.e. an instrument that can determine the spectra of all points in a two-dimensional scene. The general type of imaging spectrometer under which this invention falls has been termed a computed-tomography imaging spectrometer (CTIS). CTIS's have the ability to perform spectral imaging of scenes containing rapidly moving objects or evolving features, hereafter referred to as transient scenes. This invention, a reflective CTIS with an unique two-dimensional reflective grating, can operate in any wavelength band from the ultraviolet through long-wave infrared. Although this spectrometer is especially useful for rapidly occurring events it is also useful for investigation of some slow moving phenomena as in the life sciences.

4. 发明授权

US06480333B1 Diffractive optical elements on non-flat substrates using electron beam lithography 有权
$Diffractive optical elements on non-flat substrates using electron beam lithography$
标题翻译：使用电子束光刻的非平坦基板上的衍射光学元件
公开(公告)号：US06480333B1
公开(公告)日：2002-11-12
申请号：US09196612
申请日：1998-11-18
申请人： Paul D. Maker , Richard E. Muller , Daniel W. Wilson
发明人： Paul D. Maker , Richard E. Muller , Daniel W. Wilson
IPC分类号： G02B518
CPC分类号： G02B5/1857
摘要： The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.
摘要翻译：本公开描述了一种用电子束光刻在曲面上产生衍射光栅的技术。曲面可以作为光学元件在成像光谱仪中产生平坦且无像差的图像。此外，制造技术可以改变光栅级的功率结构，使得在一阶中存在比对于典型光栅更多的能量。发明人注意到，通过使用电子束光刻技术，可以制造出非常适合成像光谱仪要求的各种凸形光栅。

5. 发明授权

US06717172B2 Diffractive optical fluid shear stress sensor 失效
$Diffractive optical fluid shear stress sensor$
标题翻译：衍射光学流体剪切应力传感器
公开(公告)号：US06717172B2
公开(公告)日：2004-04-06
申请号：US10025218
申请日：2001-12-18
申请人： Morteza Gharib , Daniel W. Wilson , Siamak Forouhar , Richard E. Muller , Dominique Fourguette , Darius Modarress , Frederic Taugwalder
发明人： Morteza Gharib , Daniel W. Wilson , Siamak Forouhar , Richard E. Muller , Dominique Fourguette , Darius Modarress , Frederic Taugwalder
IPC分类号： G01N2149
CPC分类号： G01N21/47
摘要： A diffractive optic sheer stress sensor operates by forming diverging fringes over a linear area of measurement. A diode laser focuses light onto a diffractive lens which focuses the light to respective slits. The slits form diverging fringes, and scattered light from the fringes is collected by a window and focused by another diffractive lens to a receiver.
摘要翻译：衍射光学透镜应力传感器通过在线性测量区域上形成发散条纹来进行操作。二极管激光器将光聚焦到将光聚焦到各个狭缝的衍射透镜上。狭缝形成发散条纹，并且来自边缘的散射光被窗口收集并且被另一个衍射透镜聚焦到接收器。

6. 发明授权

US4959326A Fabricating T-gate MESFETS employing double exposure, double develop techniques 失效
标题翻译：采用双重曝光，双重开发技术制造T栅极MESFETS
公开(公告)号：US4959326A
公开(公告)日：1990-09-25
申请号：US289071
申请日：1988-12-22
申请人： Bernard J. Roman , Richard E. Muller
发明人： Bernard J. Roman , Richard E. Muller
IPC分类号： H01L21/285 , H01L21/338
CPC分类号： H01L29/66863 , H01L21/28587
摘要： A method for forming a T-gate for a MESFET device comprises a double exposure, double develop process. In a first exposure employing lithography a layer of PMMA is applied first to a substrate and spun to a desired thickness and then baked for a predetermined period. The gate pattern was aligned to the ohmic level and either E-beam written or exposed to deep UV radiation through a quartz mask. The wafer as treated was then spray developed using a mixture of MIBK and alcohol. After coating with a Novolak resist, the same gate mask was either realigned to the Ohmic level and exposed to mid-range UV radiation in the 400 nm range or alternatively E-beam written with a modified gate pattern to eliminate the T at the gate pad. The wafer was then spray developed again, this time using LSI developer. The second photo was overexposed in order to form a large opening through the top of the T while the first photo was underexposed to make the stem of the T as narrow as possible. After an oxygen plasma descum, the wafer was spray etched with a suitable solution and then rinsed. The resultant wafer possessed a T-shaped recess for the gate configuration which then was conventionally metallized to form MESFETS.
摘要翻译：用于形成MESFET器件的T形栅极的方法包括双曝光，双重显影工艺。在使用平版印刷术的第一曝光中，首先将一层PMMA施加到基底上并纺丝至所需厚度，然后烘烤预定时间。栅极图案与欧姆级对准，电子束被写入或暴露于通过石英掩模的深紫外线辐射。然后使用MIBK和醇的混合物将处理的晶片喷雾显影。在用酚醛清漆抗蚀剂涂覆之后，将相同的栅极掩模重新对准欧姆水平并暴露于400nm范围内的中等范围的UV辐射，或者以修改的栅极图案写入电子束，以消除栅极焊盘处的T 。然后将晶片再次喷涂，此时使用LSI开发商。第二张照片曝光过度，以形成通过T顶部的大开口，而第一张照片曝光不足，使得T杆尽可能窄。在氧等离子体除去之后，用合适的溶液喷涂晶片，然后冲洗。所得到的晶片具有用于栅极配置的T形凹槽，然后通常将其金属化以形成MESFETS。

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