专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5436452A Uncooled tunneling infrared sensor 失效
标题翻译：未冷却隧道红外传感器
公开(公告)号：US5436452A
公开(公告)日：1995-07-25
申请号：US79507
申请日：1993-06-21
申请人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Richard E. Muller , Paul D. Maker
发明人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Richard E. Muller , Paul D. Maker
IPC分类号： G01J1/42 , G01J5/00 , G01J5/42 , G01Q10/00 , G01Q30/10 , G01Q60/16 , G01Q70/14 , G01Q70/18 , H01J37/00
CPC分类号： G01J5/42 , B82Y35/00 , G01J2005/425
摘要： An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
摘要翻译：非制冷红外隧道传感器，其中唯一的移动部分是偏转成与通过新颖的光刻工艺制备的微机加工的硅尖端电极接触的膜片。类似地制备的偏转电极采用静电力来控制氮化硅，平膜片的偏转。振膜表现出高谐振频率，可降低传感器对振动的敏感度。高带宽反馈电路通过调节偏转电压来控制隧穿电流，以保持膜的恒定偏转。所得到的红外传感器可以小于100μm的像素尺寸。使用波纹膜实现替代实施例，以允许大的偏转而不需要复杂的钳位和高偏转电压。替代实施例还在膜中采用针孔以适应环境温度变化和密封室，以消除隧道电极的环境污染和对传感器的不合需要的声耦合。

2. 发明授权

US5298748A Uncooled tunneling infrared sensor 失效
标题翻译：未冷却隧道红外传感器
公开(公告)号：US5298748A
公开(公告)日：1994-03-29
申请号：US898682
申请日：1992-06-15
申请人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Howard K. Rockstad , Joseph K. Reynolds
发明人： Thomas W. Kenny , William J. Kaiser , Judith A. Podosek , Erika C. Vote , Howard K. Rockstad , Joseph K. Reynolds
IPC分类号： G01J1/42 , G01J5/00 , G01J5/42 , G01Q10/00 , G01Q30/10 , G01Q60/16 , G01Q70/14 , G01Q70/18 , H01J37/00
CPC分类号： G01J5/42 , B82Y15/00 , G01J2005/425
摘要： An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane which would otherwise change deflection depending upon incident infrared radiation. The resulting infrared sensor will meet or exceed the performance of all other broadband, uncooled, infrared sensors and can be miniaturized to pixel dimensions smaller than 100 .mu.m. The technology is readily implemented as a small-format linear array suitable for commercial and spacecraft applications.
摘要翻译：非制冷红外隧道传感器，其中唯一的移动部分是偏转成与通过新颖的光刻工艺制备的微机加工的硅尖端电极接触的膜片。类似地制备的偏转电极采用静电力来控制氮化硅，平膜片的偏转。振膜表现出高谐振频率，可降低传感器对振动的敏感度。高带宽反馈电路通过调节偏转电压来控制隧道电流，以保持膜的恒定偏转，否则将根据入射的红外辐射而改变偏转。所产生的红外传感器将达到或超过所有其他宽带，非制冷红外传感器的性能，并且可以小于小于100（我）m的像素尺寸。该技术很容易实现为适用于商业和航天器应用的小格式线性阵列。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式