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    • 1. 发明授权
    • Fabricating T-gate MESFETS employing double exposure, double develop
techniques
    • 采用双重曝光,双重开发技术制造T栅极MESFETS
    • US4959326A
    • 1990-09-25
    • US289071
    • 1988-12-22
    • Bernard J. RomanRichard E. Muller
    • Bernard J. RomanRichard E. Muller
    • H01L21/285H01L21/338
    • H01L29/66863H01L21/28587
    • A method for forming a T-gate for a MESFET device comprises a double exposure, double develop process. In a first exposure employing lithography a layer of PMMA is applied first to a substrate and spun to a desired thickness and then baked for a predetermined period. The gate pattern was aligned to the ohmic level and either E-beam written or exposed to deep UV radiation through a quartz mask. The wafer as treated was then spray developed using a mixture of MIBK and alcohol. After coating with a Novolak resist, the same gate mask was either realigned to the Ohmic level and exposed to mid-range UV radiation in the 400 nm range or alternatively E-beam written with a modified gate pattern to eliminate the T at the gate pad. The wafer was then spray developed again, this time using LSI developer. The second photo was overexposed in order to form a large opening through the top of the T while the first photo was underexposed to make the stem of the T as narrow as possible. After an oxygen plasma descum, the wafer was spray etched with a suitable solution and then rinsed. The resultant wafer possessed a T-shaped recess for the gate configuration which then was conventionally metallized to form MESFETS.
    • 用于形成MESFET器件的T形栅极的方法包括双曝光,双重显影工艺。 在使用平版印刷术的第一曝光中,首先将一层PMMA施加到基底上并纺丝至所需厚度,然后烘烤预定时间。 栅极图案与欧姆级对准,电子束被写入或暴露于通过石英掩模的深紫外线辐射。 然后使用MIBK和醇的混合物将处理的晶片喷雾显影。 在用酚醛清漆抗蚀剂涂覆之后,将相同的栅极掩模重新对准欧姆水平并暴露于400nm范围内的中等范围的UV辐​​射,或者以修改的栅极图案写入电子束,以消除栅极焊盘处的T 。 然后将晶片再次喷涂,此时使用LSI开发商。 第二张照片曝光过度,以形成通过T顶部的大开口,而第一张照片曝光不足,使得T杆尽可能窄。 在氧等离子体除去之后,用合适的溶液喷涂晶片,然后冲洗。 所得到的晶片具有用于栅极配置的T形凹槽,然后通常将其金属化以形成MESFETS。
    • 6. 发明授权
    • Uncooled tunneling infrared sensor
    • 未冷却隧道红外传感器
    • US5436452A
    • 1995-07-25
    • US79507
    • 1993-06-21
    • Thomas W. KennyWilliam J. KaiserJudith A. PodosekErika C. VoteRichard E. MullerPaul D. Maker
    • Thomas W. KennyWilliam J. KaiserJudith A. PodosekErika C. VoteRichard E. MullerPaul D. Maker
    • G01J1/42G01J5/00G01J5/42G01Q10/00G01Q30/10G01Q60/16G01Q70/14G01Q70/18H01J37/00
    • G01J5/42B82Y35/00G01J2005/425
    • An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
    • 非制冷红外隧道传感器,其中唯一的移动部分是偏转成与通过新颖的光刻工艺制备的微机加工的硅尖端电极接触的膜片。 类似地制备的偏转电极采用静电力来控制氮化硅,平膜片的偏转。 振膜表现出高谐振频率,可降低传感器对振动的敏感度。 高带宽反馈电路通过调节偏转电压来控制隧穿电流,以保持膜的恒定偏转。 所得到的红外传感器可以小于100μm的像素尺寸。 使用波纹膜实现替代实施例,以允许大的偏转而不需要复杂的钳位和高偏转电压。 替代实施例还在膜中采用针孔以适应环境温度变化和密封室,以消除隧道电极的环境污染和对传感器的不合需要的声耦合。