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1. 发明授权

US08932405B2 Apparatus for low-temperature epitaxy on a plurality semiconductor substrates 有权
标题翻译：用于在多个半导体衬底上进行低温外延的装置
公开(公告)号：US08932405B2
公开(公告)日：2015-01-13
申请号：US11579276
申请日：2005-05-10
申请人： Thomas Grabolla , George Ritter , Bernd Tillack
发明人： Thomas Grabolla , George Ritter , Bernd Tillack
IPC分类号： C23C16/00 , C23C16/54 , C30B25/08
CPC分类号： C23C16/54 , C30B25/08
摘要： A reactor arrangement for layer deposition on a plurality of substrates (hereafter substrates) comprising a first reactor chamber for simultaneous cleaning the substrates, at least one second reactor chamber for depositing at least one layer on each of the substrates, a first heating device for setting the substrate temperature of the substrates in the first reactor chamber, a second heating device for setting the substrate temperature of the substrates in the second reactor chamber, a device for producing a gas atmosphere of predetermined composition and predetermined pressure, a transport device for transporting the substrates simultaneously from the first to the second reactor chamber, and a control device for controlling the heating devices and device for producing the gas atmosphere in such a way that the substrates are moved or stored in an interruption-free manner in a reducing gas atmosphere as long as the substrate temperature is above critical temperature Tc.
摘要翻译：一种反应器装置，用于在多个基板（以下称为基板）上层压沉积，该基板包括用于同时清洁基板的第一反应器室，用于在每个基板上沉积至少一层的至少一个第二反应室，用于设定的第一加热装置第一反应器室中的基板的基板温度，用于设定第二反应器室中的基板的基板温度的第二加热装置，用于制造预定组成和预定压力的气体气氛的装置，用于输送基板同时从第一反应室到第二反应室，以及控制装置，用于控制加热装置和用于产生气体气氛的装置，使得基板在还原气体气氛中以无中断的方式移动或储存，如只要衬底温度高于临界温度Tc。

2. 发明申请

US20080050929A1 Method of and Apparatus for Low-Temperature Epitaxy on a Plurality of Semiconductor Substrates 有权
标题翻译：在多个半导体基板上的低温外延的方法和装置
公开(公告)号：US20080050929A1
公开(公告)日：2008-02-28
申请号：US11579276
申请日：2005-05-10
申请人： Thomas Grabolla , George Ritter , Bernd Tillack
发明人： Thomas Grabolla , George Ritter , Bernd Tillack
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： C23C16/54 , C30B25/08
摘要： A method of depositing layers on a plurality of semiconductor substrates simultaneously, comprising the steps: cleaning of at least one respective surface of the substrates in a first reactor at a first substrate temperature Tred, transport of the substrates from the first reactor into a second reactor, and subsequent deposition of at least one respective layer on the semiconductor substrates in the second reactor at a second substrate temperature Tdep, wherein the semiconductor substrates are moved or stored during the cleaning step and during transport from the first reactor into the second reactor in an interruption-free manner in a reducing gas atmosphere as long as the substrate temperature is above a critical temperature Tc which is dependent on the substrate material and the material of the at least one layer to be deposited.
摘要翻译：一种在多个半导体衬底上同时沉积层的方法，包括以下步骤：在第一衬底温度T T下，在第一反应器中清洗衬底的至少一个相应表面，输送衬底从第一反应器到第二反应器，以及随后在第二基板温度T T下在第二反应器中的半导体基板上沉积至少一个相应的层，其中半导体基板在清洁步骤以及在还原气体气氛中以无中断的方式从第一反应器输送到第二反应器中，只要基板温度高于临界温度T℃，这取决于衬底材料和待沉积的至少一层的材料。

3. 发明授权

US07244667B2 Method and device for the production of thin epitaxial semiconductor layers 有权
标题翻译：用于生产薄外延半导体层的方法和装置
公开(公告)号：US07244667B2
公开(公告)日：2007-07-17
申请号：US10484975
申请日：2002-07-25
申请人： Bernd Tillack , Dirk Wolansky , Georg Ritter , Thomas Grabolla
发明人： Bernd Tillack , Dirk Wolansky , Georg Ritter , Thomas Grabolla
IPC分类号： H01L21/205
CPC分类号： H01L21/02529 , C23C16/0218 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput.The surfaces of the semiconductor substrates to be coated are first cleaned, and the substrates are then heated in a low pressure batch reactor to a first temperature (prebake temperature). The surfaces to be coated are next subjected to a hydrogen prebake operation at a first reactor pressure. In the next step the semiconductor substrates are heated in a low pressure hot or warm wall batch reactor to a second temperature (deposition temperature) lower than the first temperature, and after a condition of thermodynamic equilibrium is reached the diffusion-inhibiting semiconductor layers are deposited on the surfaces to be coated in a chemical gaseous deposition process (CVD) at a second reactor pressure higher than, equal to or lower than the first reactor pressure.
摘要翻译：用于制造扩散抑制外延半导体层的系统，通过该系统，可以在大的半导体衬底上以高通量产生薄的扩散抑制性外延半导体层。首先清洁待涂覆的半导体衬底的表面，然后将衬底在低压间歇反应器中加热到第一温度（预烘烤温度）。待涂覆的表面接下来在第一反应器压力下进行氢预烘烤操作。在下一步骤中，将半导体衬底在低压热或温壁间歇反应器中加热到低于第一温度的第二温度（沉积温度），并且在达到热力学平衡条件之后，沉积扩散抑制半导体层在高于等于或低于第一反应器压力的第二反应器压力下在化学气相沉积工艺（CVD）中待涂覆的表面上。

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