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1. 发明授权

US07244667B2 Method and device for the production of thin epitaxial semiconductor layers 有权
标题翻译：用于生产薄外延半导体层的方法和装置
公开(公告)号：US07244667B2
公开(公告)日：2007-07-17
申请号：US10484975
申请日：2002-07-25
申请人： Bernd Tillack , Dirk Wolansky , Georg Ritter , Thomas Grabolla
发明人： Bernd Tillack , Dirk Wolansky , Georg Ritter , Thomas Grabolla
IPC分类号： H01L21/205
CPC分类号： H01L21/02529 , C23C16/0218 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput.The surfaces of the semiconductor substrates to be coated are first cleaned, and the substrates are then heated in a low pressure batch reactor to a first temperature (prebake temperature). The surfaces to be coated are next subjected to a hydrogen prebake operation at a first reactor pressure. In the next step the semiconductor substrates are heated in a low pressure hot or warm wall batch reactor to a second temperature (deposition temperature) lower than the first temperature, and after a condition of thermodynamic equilibrium is reached the diffusion-inhibiting semiconductor layers are deposited on the surfaces to be coated in a chemical gaseous deposition process (CVD) at a second reactor pressure higher than, equal to or lower than the first reactor pressure.
摘要翻译：用于制造扩散抑制外延半导体层的系统，通过该系统，可以在大的半导体衬底上以高通量产生薄的扩散抑制性外延半导体层。首先清洁待涂覆的半导体衬底的表面，然后将衬底在低压间歇反应器中加热到第一温度（预烘烤温度）。待涂覆的表面接下来在第一反应器压力下进行氢预烘烤操作。在下一步骤中，将半导体衬底在低压热或温壁间歇反应器中加热到低于第一温度的第二温度（沉积温度），并且在达到热力学平衡条件之后，沉积扩散抑制半导体层在高于等于或低于第一反应器压力的第二反应器压力下在化学气相沉积工艺（CVD）中待涂覆的表面上。

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