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1. 发明授权

US5124561A Process for X-ray mask warpage reduction 失效
标题翻译： X射线掩模翘曲降低的过程
公开(公告)号：US5124561A
公开(公告)日：1992-06-23
申请号：US680216
申请日：1991-04-04
申请人： Thomas B. Faure , Kurt R. Kimmel , James G. Ryan , Timothy D. Sullivan
发明人： Thomas B. Faure , Kurt R. Kimmel , James G. Ryan , Timothy D. Sullivan
IPC分类号： G03F1/22 , H01L21/027 , H01L21/30
CPC分类号： G03F1/22
摘要： An X-ray mask substrate includes a silicon wafer having a square, central region etched to a thin, tensile membrane and a highly tensile film deposited on the bottom surface of the substrate to reduce substrate warpage. The square, central region of the substrate is adapted to support X-ray absorbing material during the lithography process. A layer of highly tensile film such as tungsten is deposited on the lower side of the substrate to induce a bending moment on the substrate opposite that induced during the substrate fabrication process. The thickness of the film layer is directly proportional to the amount of warpage induced in the substrate during the fabrication process. A support ring is bonded to the peripheral region of the substrate to provide integrity and support.
摘要翻译： X射线掩模基板包括具有蚀刻到薄的拉伸膜的正方形中心区域和沉积在基板的底表面上的高拉伸膜的硅晶片，以减少基板翘曲。衬底的正方形中心区域适于在光刻工艺期间支撑X射线吸收材料。在基板的下侧沉积有诸如钨的高强度拉伸膜层，以在基板制造过程中引起与基板相反的弯矩。膜层的厚度与在制造过程中在衬底中引起的翘曲量成正比。支撑环结合到基板的周边区域以提供完整性和支撑。

2. 发明授权

US5296775A Cooling microfan arrangements and process 失效
标题翻译：冷却微管安排和工艺
公开(公告)号：US5296775A
公开(公告)日：1994-03-22
申请号：US950621
申请日：1992-09-24
申请人： John E. Cronin , Rosemary A. Previti-Kelly , James G. Ryan , Timothy D. Sullivan
发明人： John E. Cronin , Rosemary A. Previti-Kelly , James G. Ryan , Timothy D. Sullivan
IPC分类号： F04D25/08 , H02N1/00
CPC分类号： F04D25/08 , H02N1/004
摘要： A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade.Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.
摘要翻译：提供一种微静电冷却风扇装置，其包括具有平坦表面的热源，附接到热源的定子，附接到热源并与定子间隔开的轴;旋转元件，包括其中具有孔的旋转元件，风扇叶片，通过轮毂的孔的轴和风扇叶片的主表面相对于热源的表面设置成一定角度并且在一端附接到轮毂，而另一端风扇叶片与定子相邻但间隔开，并且施加到定子的电压源具有足够的电压以对风扇叶片充电。此外，提供了一种制造微纤维的方法，其包括在热源的平坦表面上形成牺牲材料条，在绝热层上施加旋涂在热源和带上，用于产生从顶部延伸的倾斜表面的条带朝向热源的平面表面，在倾斜表面上施加一层导电材料，并且从导电材料层划分并限定绝缘层上的自旋的倾斜表面上的风扇叶片和一个定子上的风扇叶片风扇叶片的末端。

3. 发明授权

US5326430A Cooling microfan arrangements and process 失效
公开(公告)号：US5326430A
公开(公告)日：1994-07-05
申请号：US164494
申请日：1993-12-07
申请人： John E. Cronin , Rosemary A. Previti-Kelly , James G. Ryan , Timothy D. Sullivan
发明人： John E. Cronin , Rosemary A. Previti-Kelly , James G. Ryan , Timothy D. Sullivan
IPC分类号： F04D25/08 , H02N1/00 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： F04D25/08 , H02N1/004
摘要： A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade. Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.

4. 发明授权

US08512458B2 Chemical and particulate filters containing chemically modified carbon nanotube structures 失效
标题翻译：包含化学改性碳纳米管结构的化学和微粒过滤器
公开(公告)号：US08512458B2
公开(公告)日：2013-08-20
申请号：US12166865
申请日：2008-07-02
申请人： Steven J. Holmes , Mark C. Hakey , David V. Horak , James G. Ryan
发明人： Steven J. Holmes , Mark C. Hakey , David V. Horak , James G. Ryan
IPC分类号： B01D53/02 , B01D59/26 , B01D24/00 , B01D39/14 , D01C5/00 , D01F9/12
CPC分类号： B01D53/02 , B01D2253/102 , B01D2253/304 , B01J20/20 , B01J20/205 , B01J20/3242 , B82Y30/00 , Y10S55/05 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/75 , Y10S977/752
摘要： A carbon nanotube filter, a use for a carbon nanotube filter and a method of forming a carbon nanotube filter. The method including (a) providing a carbon source and a carbon nanotube catalyst; (b) growing carbon nanotubes by reacting the carbon source with the nanotube catalyst; (c) forming chemically active carbon nanotubes by forming a chemically active layer on the carbon nanotubes or forming chemically reactive groups on sidewalls of the carbon nanotubes; and (d) placing the chemically active nanotubes in a filter housing.
摘要翻译：碳纳米管过滤器，碳纳米管过滤器的用途和形成碳纳米管过滤器的方法。该方法包括（a）提供碳源和碳纳米管催化剂; （b）使碳源与纳米管催化剂反应生长碳纳米管; （c）通过在碳纳米管上形成化学活性层或在碳纳米管的侧壁上形成化学反应性基团形成化学活性碳纳米管; 和（d）将化学活性纳米管放置在过滤器壳体中。

5. 发明授权

US07433481B2 Digital hearing aid system 有权
标题翻译：数字助听器系统
公开(公告)号：US07433481B2
公开(公告)日：2008-10-07
申请号：US11150896
申请日：2005-06-13
申请人： Stephen W. Armstrong , Frederick E. Sykes , David R. Brown , James G. Ryan
发明人： Stephen W. Armstrong , Frederick E. Sykes , David R. Brown , James G. Ryan
IPC分类号： H04R25/00
CPC分类号： H04R25/407 , H04R25/356 , H04R25/453 , H04R25/505 , H04R2225/43 , H04R2460/05
摘要： A digital hearing aid is provided that includes front and rear microphones, a sound processor, and a speaker. Embodiments of the digital hearing aid include an occlusion subsystem, and a directional processor and headroom expander. The front microphone receives a front microphone acoustical signal and generates a front microphone analog signal. The rear microphone receives a rear microphone acoustical signal and generates a rear microphone analog signal. The front and rear microphone analog signals are converted into the digital domain, and at least the front microphone signal is coupled to the sound processor. The sound processor selectively modifies the signal characteristics and generates a processed signal. The processed signal is coupled to the speaker which converts the signal to an acoustical hearing aid output signal that is directed into the ear canal of the digital hearing aid user. The occlusion sub-system compensates for the amplification of the digital hearing aid user's own voice within the ear canal. The directional processor and headroom expander optimizes the gain applied to the acoustical signals received by the digital hearing aid and combine the amplified signals into a directionally-sensitive response.
摘要翻译：提供了一种数字助听器，包括前置和后置麦克风，声音处理器和扬声器。数字助听器的实施例包括遮挡子系统以及定向处理器和净空扩展器。前麦克风接收前麦克风声信号并产生前麦克风模拟信号。后麦克风接收后麦克风声音信号并产生后麦克风模拟信号。前和后麦克风模拟信号被转换成数字域，并且至少前麦克风信号耦合到声音处理器。声音处理器选择性地修改信号特性并产生处理的信号。经处理的信号耦合到扬声器，扬声器将该信号转换成被引导到数字助听器用户的耳道中的声学助听器输出信号。闭塞子系统补偿耳道内数字助听器用户自己的声音的放大。定向处理器和净空扩展器优化了应用于由数字助听器接收的声学信号的增益，并将放大的信号组合成方向敏感的响应。

6. 发明授权

US06656369B2 Method for fabricating a scanning probe microscope probe 失效
标题翻译：扫描探针显微镜探针的制造方法
公开(公告)号：US06656369B2
公开(公告)日：2003-12-02
申请号：US10053314
申请日：2002-01-17
申请人： Mahadevaiyer Krishnan , Mark E. Lagus , Kevin S. Petrarca , James G. Ryan , Richard P. Volant
发明人： Mahadevaiyer Krishnan , Mark E. Lagus , Kevin S. Petrarca , James G. Ryan , Richard P. Volant
IPC分类号： B44C122
CPC分类号： G01Q70/16
摘要： A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.
摘要翻译：扫描探针显微镜探针通过将探针材料沉积在具有正在制造的扫描探针显微镜探针的所需形状和尺寸的空腔的模具中而形成。在优选实施例中，通过在模具主体中光刻地限定所需扫描探针显微镜探针的形状和尺寸并蚀刻模具主体以形成空腔而形成空腔。在将探针材料沉积在模具中的空腔中之前，空腔内衬有释放层，其在探针已经形成之后激活，允许去除探针。

7. 发明授权

US06426544B1 Flexible interconnections with dual-metal dual-stud structure 失效
标题翻译：双金属双螺柱结构的柔性互连
公开(公告)号：US06426544B1
公开(公告)日：2002-07-30
申请号：US09351440
申请日：1999-07-12
申请人： James G. Ryan , Badih El-Kareh
发明人： James G. Ryan , Badih El-Kareh
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L21/76838 , H01L23/5223 , H01L23/53223 , H01L23/53228 , H01L2924/0002 , Y10S438/957 , H01L2924/00
摘要： A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.
摘要翻译：具有高导电性和高金属迁移破坏性的金属互连由两层金属或合金（例如TI / CuAlSi）形成，其中介电介质介于两者之间，并且通过导电材料形成在该层之间的连接，优选在在互连的端部形成在层间电介质的孔中的插头或螺柱的形式。通过与每个层形成单独的连接，可以从相同的层形成高精度的金属 - 金属电容器。互连（和电容器）的形状具有降低的严重性，并且有助于覆盖层间电介质的平坦化。

8. 发明授权

US6140217A Technique for extending the limits of photolithography 失效
公开(公告)号：US6140217A
公开(公告)日：2000-10-31
申请号：US116791
申请日：1998-07-16
申请人： Harris C. Jones , James G. Ryan
发明人： Harris C. Jones , James G. Ryan
IPC分类号： H01L21/027 , H01L21/768 , H01L23/528 , H01L21/44
CPC分类号： H01L21/76816 , H01L21/76834 , H01L21/76877 , H01L21/76885 , H01L23/5283 , H01L21/76844 , H01L2924/0002
摘要： A method of forming a wiring pattern in a device comprises forming an array of grooves in a mask, forming first spacers adjacent vertical walls of the grooves, removing the mask, forming second spacers adjacent the first spacers, and filling areas between the first spacers and areas between the second spacers with a material to form the wiring pattern.

9. 发明授权

US5356837A Method of making epitaxial cobalt silicide using a thin metal underlayer 失效
标题翻译：使用薄金属底层制造外延钴硅化物的方法
公开(公告)号：US5356837A
公开(公告)日：1994-10-18
申请号：US145429
申请日：1993-10-29
申请人： Peter J. Geiss , Thomas J. Licata , Herbert L. Ho , James G. Ryan
发明人： Peter J. Geiss , Thomas J. Licata , Herbert L. Ho , James G. Ryan
IPC分类号： H01L21/28 , C30B1/00 , H01L21/223 , H01L21/225 , H01L21/285 , H01L21/8238 , H01L27/092 , H01L21/44
CPC分类号： H01L21/28518 , C30B1/00 , C30B29/10 , H01L21/2257
摘要： An epitaxial cobalt silicide film is formed using a thin metal underlayer, which is placed underneath a cobalt layer prior to a heating step which forms the silicide film. More specifically, a refractory metal layer comprising tungsten, chromium, molybdenum, or a silicide thereof, is formed overlying a silicon substrate on a semiconductor wafer. A cobalt layer is formed overlying the refractory metal layer. Next, the wafer is annealed at a temperature sufficiently high to form an epitaxial cobalt silicide film overlying the silicon substrate. Following this annealing step, a cobalt-silicon-refractory metal alloy remains overlying the epitaxial cobalt silicide film. This silicide is then used to form a shallow P-N junction by dopant out-diffusion. First, either a P or N-type dopant is implanted into the silicide film so that substantially none of the dopant is implanted into the underlying silicon substrate. After implanting, the dopant is out-diffused from the silicide film into the underlying silicon substrate at a drive temperature sufficiently high to form the desired P-N junction.
摘要翻译：使用薄金属底层形成外延钴硅化物膜，该金属底层在形成硅化物膜的加热步骤之前放置在钴层下方。更具体地，在半导体晶片上的硅衬底上形成包含钨，铬，钼或其硅化物的难熔金属层。形成覆盖难熔金属层的钴层。接下来，将晶片在足够高的温度下退火以形成覆盖硅衬底的外延钴硅化物膜。在该退火步骤之后，钴 - 硅 - 难熔金属合金保留在外延钴硅化物膜上。然后将该硅化物用于通过掺杂剂外扩散形成浅P-N结。首先，将P或N型掺杂剂注入到硅化物膜中，使得基本上没有掺杂剂注入到下面的硅衬底中。在植入之后，掺杂剂在足够高的驱动温度下从硅化物薄膜扩散到下面的硅衬底中以形成所需的P-N结。

10. 发明授权

US5251806A Method of forming dual height solder interconnections 失效
标题翻译：形成双高度焊料互连的方法
公开(公告)号：US5251806A
公开(公告)日：1993-10-12
申请号：US870647
申请日：1992-04-16
申请人： Birendra N. Agarwala , Aziz M. Ahsan , Arthur Bross , Mark F. Chadurjian , Nicholas G. Koopman , Li-Chung Lee , Karl J. Puttlitz , Sudipta K. Ray , James G. Ryan , Joseph G. Schaefer , Kamalesh K. Srivastava , Paul A. Totta , Erick G. Walton , Adolf E. Wirsing
发明人： Birendra N. Agarwala , Aziz M. Ahsan , Arthur Bross , Mark F. Chadurjian , Nicholas G. Koopman , Li-Chung Lee , Karl J. Puttlitz , Sudipta K. Ray , James G. Ryan , Joseph G. Schaefer , Kamalesh K. Srivastava , Paul A. Totta , Erick G. Walton , Adolf E. Wirsing
IPC分类号： H01L21/60 , H01L23/485 , H05K3/34 , H01L21/283
CPC分类号： H01L24/12 , H01L24/11 , H01L2224/11901 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/1357 , H01L2224/13582 , H01L2224/13583 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/13664 , H01L2224/13666 , H01L2224/13669 , H01L2224/1367 , H01L2224/13671 , H01L2224/13672 , H01L2224/13676 , H01L2224/13679 , H01L2224/1368 , H01L2224/13681 , H01L2224/13684 , H01L24/16 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H05K3/3431 , H05K3/3457
摘要： The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
摘要翻译：本发明一般涉及新的互连及其制造方法，更具体地说，涉及一种细长的焊料互连及其制造方法。在电子载体上，形成焊盘，在其上沉积焊料块并用金属层封盖，从而形成细长的焊料互连。现在可以通过在已经被金属层覆盖的第一焊料块上形成第二焊料块来形成另外细长的焊料互连。可以通过用金属覆盖层封盖前述焊料块和/或最后的焊料块来形成附加的细长焊料互连。或者，封装层可以是形成在焊料块的侧壁上的侧壁间隔物的形式。

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