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    • 1. 发明授权
    • Cooling microfan arrangements and process
    • 冷却微管安排和工艺
    • US5296775A
    • 1994-03-22
    • US950621
    • 1992-09-24
    • John E. CroninRosemary A. Previti-KellyJames G. RyanTimothy D. Sullivan
    • John E. CroninRosemary A. Previti-KellyJames G. RyanTimothy D. Sullivan
    • F04D25/08H02N1/00
    • F04D25/08H02N1/004
    • A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade.Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.
    • 提供一种微静电冷却风扇装置,其包括具有平坦表面的热源,附接到热源的定子,附接到热源并与定子间隔开的轴;旋转元件,包括其中具有孔的旋转元件, 风扇叶片,通过轮毂的孔的轴和风扇叶片的主表面相对于热源的表面设置成一定角度并且在一端附接到轮毂,而另一端 风扇叶片与定子相邻但间隔开,并且施加到定子的电压源具有足够的电压以对风扇叶片充电。 此外,提供了一种制造微纤维的方法,其包括在热源的平坦表面上形成牺牲材料条,在绝热层上施加旋涂在热源和带上,用于产生从顶部延伸的倾斜表面 的条带朝向热源的平面表面,在倾斜表面上施加一层导电材料,并且从导电材料层划分并限定绝缘层上的自旋的倾斜表面上的风扇叶片和一个定子上的风扇叶片 风扇叶片的末端。
    • 4. 发明授权
    • Plural level chip masking
    • 多级芯片屏蔽
    • US5126006A
    • 1992-06-30
    • US708608
    • 1991-05-31
    • John E. CroninPaul A. Farrar, Sr.Robert M. GeffkenWilliam H. GuthrieCarter W. KaantaRosemary A. Previti-KellyJames G. RyanRonald R. UttechtAndrew J. Watts
    • John E. CroninPaul A. Farrar, Sr.Robert M. GeffkenWilliam H. GuthrieCarter W. KaantaRosemary A. Previti-KellyJames G. RyanRonald R. UttechtAndrew J. Watts
    • G03F1/00G03F7/00
    • G03F7/0035G03F1/50
    • A sequence of masking steps reduces the amount of transference of a workpiece among work stations and reduces certain tolerances required for mask alignment in the construction of integrated circuits, and a gray level mask suitable for photolithography. In the integrated circuit, masking layers are developed directly in a wafer for delineating vertical and horizontal portions of an electrically conductive path. The mask is constructed of a transparent glass substrate which supports plural levels of materials having different optical transmissivities. In the case of a mask employing only two of these levels, one level may be constructed of a glass made partially transmissive by substitution of silver ions in place of metal ions of alkali metal silicates employed in the construction of the glass. The second layer may be made opaque by construction of the layer of a metal such as chromium. Both the wafer and the mask are fabricated by a photoresist structure which is etched in specific regions by photolithographic masking to enable selective etching of exposed regions of the level of materials of differing optical transmissivities. Various etches are employed for selective etching of the photoresist and other ones of the layers. The etches include plasma etch with chloride ions to attack the chromium of the opaque layer, compounds of fluorine to attack the glass layer, and reactive ion etching with oxygen to attack the photoresist structure.
    • 一系列掩蔽步骤减少了工件之间工件的移动量,并降低了集成电路结构中掩模对准所需的某些公差以及适用于光刻的灰度级掩模。 在集成电路中,掩模层直接在晶片中显影,用于描绘导电路径的垂直和水平部分。 掩模由透明玻璃基板构成,其支撑具有不同透光率的多层材料。 在仅使用这些水平中的两个的掩模的情况下,一个层可以由通过取代银离子代替在玻璃的结构中使用的碱金属硅酸盐的金属离子而部分透射的玻璃构成。 第二层可以通过金属如铬的构造而变得不透明。 晶片和掩模都通过光致抗蚀剂结构制造,该光致抗蚀剂结构通过光刻掩模在特定区域中被蚀刻,以使得能够选择性地蚀刻具有不同光学透射率的材料层的暴露区域。 各种蚀刻用于选择性蚀刻光致抗蚀剂和其它层。 蚀刻包括用氯离子等离子体蚀刻以侵蚀不透明层的铬,氟的化合物侵蚀玻璃层,以及用氧反应离子蚀刻以侵蚀光致抗蚀剂结构。
    • 6. 发明授权
    • Method of making a gray level mask
    • 制作灰度掩码的方法
    • US5213916A
    • 1993-05-25
    • US605606
    • 1990-10-30
    • John E. CroninPaul A. Farrar, Sr.Carter W. KaantaJames G. RyanAndrew J. Watts
    • John E. CroninPaul A. Farrar, Sr.Carter W. KaantaJames G. RyanAndrew J. Watts
    • G03F1/00G03F7/00G03F9/00H01L21/027
    • G03F7/0035G03F1/50
    • A gray level mask suitable for photolithography is constructed of a transparent glass substrate which supports plural levels of materials having different optical transmissivities. In the case of a mask employing only two of these levels, one level may be constructed of a glass made partially transmissive by substitution of silver ions in place of metal ions of alkali metal silicates employed in the construction of the glass. The second layer may be made opaque by construction of the layer of a metal such as chromium. The mask is fabricated with the aid of a photoresist structure which is etched in specific regions by photolithographic masking to enable selective etching of exposed regions of the level of materials of differing optical transmissivities. Various etches are employed for selective etching of the photoresist, the metal of one of the layers, and the glass of the other of the layers. The etches include plasma etch with chloride ions to attack the chromium of the opaque layer, compounds of fluorine to attack the glass layer, and reactive ion etching with oxygen to attack the photoresist structure. Also, developer is employed for etching on hardened regions of resist in the photoresist structure.
    • 适用于光刻的灰度级掩模由透明玻璃基板构成,该透明玻璃基板支持具有不同透光率的多层材料。 在仅使用这些水平中的两个的掩模的情况下,一个层可以由通过取代银离子代替在玻璃的结构中使用的碱金属硅酸盐的金属离子而部分透射的玻璃构成。 第二层可以通过金属如铬的构造而变得不透明。 借助于光致抗蚀剂结构制造掩模,该光致抗蚀剂结构通过光刻掩模在特定区域中被蚀刻,以使得能够选择性地蚀刻具有不同光学透射率的材料层的暴露区域。 各种蚀刻用于选择性蚀刻光致抗蚀剂,其中一层的金属和另一层的玻璃。 蚀刻包括用氯离子等离子体蚀刻以侵蚀不透明层的铬,氟的化合物侵蚀玻璃层,以及用氧反应离子蚀刻以侵蚀光致抗蚀剂结构。 此外,显影剂用于蚀刻光致抗蚀剂结构中的抗蚀剂的硬化区域。
    • 7. 发明授权
    • Gray level mask
    • 灰度级面罩
    • US5334467A
    • 1994-08-02
    • US22516
    • 1993-02-25
    • John E. CroninPaul A. Farrar, Sr.Carter W. KaantaJames G. RyanAndrew J. Watts
    • John E. CroninPaul A. Farrar, Sr.Carter W. KaantaJames G. RyanAndrew J. Watts
    • G03F1/00G03F7/00G03F9/00H01L21/027
    • G03F7/0035G03F1/50
    • A gray level mask suitable for photolithography is constructed of a transparent glass substrate which supports plural levels of materials having different optical transmissivities. In the case of a mask employing only two of these levels, one level may be constructed of a glass made partially transmissive by substitution of silver ions in place of metal ions of alkali metal silicates employed in the construction of the glass. The second layer may be made opaque by construction of the layer of a metal such as chromium. The mask is fabricated with the aid of a photoresist structure which is etched in specific regions by photolithographic masking to enable selective etching of exposed regions of the level of materials of differing optical transmissivities. Various etches are employed for selective etching of the photoresist, the metal of one of the layers, and the glass of the other of the layers. The etches include plasma etch with chloride ions to attack the chromium of the opaque layer, compounds of fluorine to attack the glass layer, and reactive ion etching with oxygen to attack the photoresist structure. Also, developer is employed for etching on hardened regions of resist in the photoresist structure.
    • 适用于光刻的灰度级掩模由透明玻璃基板构成,该透明玻璃基板支持具有不同透光率的多层材料。 在仅使用这些水平中的两个的掩模的情况下,一个层可以由通过取代银离子代替在玻璃的结构中使用的碱金属硅酸盐的金属离子而部分透射的玻璃构成。 第二层可以通过金属如铬的构造而变得不透明。 借助于光致抗蚀剂结构制造掩模,该光致抗蚀剂结构通过光刻掩模在特定区域中被蚀刻,以使得能够选择性地蚀刻具有不同光学透射率的材料层的暴露区域。 各种蚀刻用于选择性蚀刻光致抗蚀剂,其中一层的金属和另一层的玻璃。 蚀刻包括用氯离子等离子体蚀刻以侵蚀不透明层的铬,氟的化合物侵蚀玻璃层,以及用氧反应离子蚀刻以侵蚀光致抗蚀剂结构。 此外,显影剂用于蚀刻光致抗蚀剂结构中的抗蚀剂的硬化区域。
    • 10. 发明授权
    • Digital hearing aid system
    • 数字助听器系统
    • US07433481B2
    • 2008-10-07
    • US11150896
    • 2005-06-13
    • Stephen W. ArmstrongFrederick E. SykesDavid R. BrownJames G. Ryan
    • Stephen W. ArmstrongFrederick E. SykesDavid R. BrownJames G. Ryan
    • H04R25/00
    • H04R25/407H04R25/356H04R25/453H04R25/505H04R2225/43H04R2460/05
    • A digital hearing aid is provided that includes front and rear microphones, a sound processor, and a speaker. Embodiments of the digital hearing aid include an occlusion subsystem, and a directional processor and headroom expander. The front microphone receives a front microphone acoustical signal and generates a front microphone analog signal. The rear microphone receives a rear microphone acoustical signal and generates a rear microphone analog signal. The front and rear microphone analog signals are converted into the digital domain, and at least the front microphone signal is coupled to the sound processor. The sound processor selectively modifies the signal characteristics and generates a processed signal. The processed signal is coupled to the speaker which converts the signal to an acoustical hearing aid output signal that is directed into the ear canal of the digital hearing aid user. The occlusion sub-system compensates for the amplification of the digital hearing aid user's own voice within the ear canal. The directional processor and headroom expander optimizes the gain applied to the acoustical signals received by the digital hearing aid and combine the amplified signals into a directionally-sensitive response.
    • 提供了一种数字助听器,包括前置和后置麦克风,声音处理器和扬声器。 数字助听器的实施例包括遮挡子系统以及定向处理器和净空扩展器。 前麦克风接收前麦克风声信号并产生前麦克风模拟信号。 后麦克风接收后麦克风声音信号并产生后麦克风模拟信号。 前和后麦克风模拟信号被转换成数字域,并且至少前麦克风信号耦合到声音处理器。 声音处理器选择性地修改信号特性并产生处理的信号。 经处理的信号耦合到扬声器,扬声器将该信号转换成被引导到数字助听器用户的耳道中的声学助听器输出信号。 闭塞子系统补偿耳道内数字助听器用户自己的声音的放大。 定向处理器和净空扩展器优化了应用于由数字助听器接收的声学信号的增益,并将放大的信号组合成方向敏感的响应。