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1. 发明授权

US08984379B2 MRAM field disturb detection and recovery 有权
标题翻译： MRAM场干扰检测和恢复
公开(公告)号：US08984379B2
公开(公告)日：2015-03-17
申请号：US13484509
申请日：2012-05-31
申请人： Thomas Andre , Syed M. Alam , Bradley Engel , Brian Butcher
发明人： Thomas Andre , Syed M. Alam , Bradley Engel , Brian Butcher
IPC分类号： H03M13/00 , G06F11/00 , G06F11/10 , G11C29/44 , H03M13/11
CPC分类号： G06F11/1048 , G11C29/44 , H03M13/11
摘要： A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.
摘要翻译：提供一种方法和存储装置，用于从与多个存储器件位相关联的多个参考位的ECC字中读取数据，并确定是否存在ECC字中的双位错误。 ECC字可以首先切换两次，并且在检测到双位错误时参考位复位。

2. 发明申请

US20120311396A1 MRAM FIELD DISTURB DETECTION AND RECOVERY 有权
标题翻译： MRAM场干扰检测和恢复
公开(公告)号：US20120311396A1
公开(公告)日：2012-12-06
申请号：US13484509
申请日：2012-05-31
申请人： Thomas Andre , Syed M. Alam , Bradley Engel , Brian Butcher
发明人： Thomas Andre , Syed M. Alam , Bradley Engel , Brian Butcher
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G06F11/1048 , G11C29/44 , H03M13/11
摘要： A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.
摘要翻译：提供一种方法和存储装置，用于从与多个存储器件位相关联的多个参考位的ECC字中读取数据，并确定是否存在ECC字中的双位错误。 ECC字可以首先切换两次，并且在检测到双位错误时参考位复位。

3. 发明申请

US20070159735A1 Magnetic tunnel junction sensor with moveable cladding 失效
标题翻译：具有可移动包层的磁隧道结传感器
公开(公告)号：US20070159735A1
公开(公告)日：2007-07-12
申请号：US11584473
申请日：2006-10-19
申请人： Brian Butcher , Kenneth Smith , Bradley Engel
发明人： Brian Butcher , Kenneth Smith , Bradley Engel
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/06
摘要： Methods (300, 400) and apparatus (46, 416, 470) are provided for sensing physical parameters. The apparatus (46, 416, 470) comprises a magnetic tunnel junction (MTJ) (32, 432), a magnetic field source (MFS) (34, 445, 476) whose magnetic field (35) overlaps the MTJ (32, 432) and a moveable magnetic cladding element (33, 448, 478) whose proximity (43, 462, 479, 479′) to the MFS (34, 445, 476) varies in response to an input to the sensor. The MFS (34, 445, 476) is located between the cladding element (33, 448, 478) and the MTJ (32, 432). Motion (41, 41′, 41-1, 464, 477) of the cladding element (33, 448, 478) relative to the MFS (34, 445, 476) in response to sensor input causes the magnetic field (35) at the MTJ (32, 432) to change, thereby changing the electrical properties of the MTJ (32, 432). A one-to-one correspondence (54) between the sensor input and the electrical properties of the MTJ (32, 432) is obtained.
摘要翻译：提供方法（300,400）和装置（46,416,470）用于感测物理参数。所述装置（46,416,470）包括磁性隧道结（MTJ）（32,432），磁场源（MFS）（34,45,476），其磁场（35）与MTJ（32,432）重叠）和与MFS（34,445,476）的接近度（43,46,479,479）响应于传感器的输入而变化的可移动磁性包覆元件（33,448,478）。 MFS（34,445,476）位于包层元件（33,448,478）和MTJ（32,432）之间。响应于传感器输入，包层元件（33,448,478）相对于MFS（34,445,476）的运动（41,41'，41-1,446,477）使磁场（35）在 MTJ（32,432）改变，从而改变MTJ（32,432）的电性能。获得传感器输入和MTJ（32,432）的电气特性之间的一一对应（54）。

4. 发明申请

US20150061663A1 APPARATUS AND METHOD FOR SEQUENTIALLY RESETTING ELEMENTS OF A MAGNETIC SENSOR ARRAY 有权
标题翻译：用于顺序重置磁传感器阵列元件的装置和方法
公开(公告)号：US20150061663A1
公开(公告)日：2015-03-05
申请号：US14532857
申请日：2014-11-04
申请人： Bradley Engel , PHillip MATHER
发明人： Bradley Engel , PHillip MATHER
IPC分类号： G01R33/09
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/0023 , G01R33/09 , G01R33/093
摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.
摘要翻译：半导体工艺和设备提供具有三个差分传感器配置的高性能磁场传感器，其仅需要两个不同的钉扎轴，其中每个差分传感器由具有四个非屏蔽磁隧道结传感器阵列的惠斯登电桥结构形成，每个包括磁场脉冲发生器，用于选择性地施加场脉冲以稳定或恢复感测层的易轴磁化，以在小磁场测量之前以正确的配置定向磁化。场脉冲顺序地施加到惠斯登电桥结构的感测层的组，从而允许更高的电流脉冲或更大的传感器阵列尺寸以获得最大的信噪比。

5. 发明申请

US20070264727A1 HIGH SENSITIVITY SENSOR FOR TAGGED MAGNETIC BEAD BIOASSAYS 审中-公开
标题翻译：高灵敏度传感器，用于标记磁珠生物传感器
公开(公告)号：US20070264727A1
公开(公告)日：2007-11-15
申请号：US11616142
申请日：2006-12-26
申请人： Bradley Engel , Michael Ward
发明人： Bradley Engel , Michael Ward
IPC分类号： G01N33/553 , C12M3/00
CPC分类号： B82Y30/00 , B82Y15/00 , G01N33/54326
摘要： The preferred embodiments of the present invention use MRAM technology to detect a shift in the magnetic switching field of a sensor. The shift in the magnetic switching field is caused by the presence of magnetic tagged beads. By measuring the magnitude of the shift in the magnetic field and correlating the magnitude of the shift to the presence of the target molecules, accurate measurements regarding the presence of the target molecules can be made.
摘要翻译：本发明的优选实施例使用MRAM技术来检测传感器的磁切换场的偏移。磁开关场的移动是由磁性标记珠的存在引起的。通过测量磁场中的偏移的大小并将移位的大小与目标分子的存在相关联，可以进行关于目标分子的存在的精确测量。

6. 发明申请

US20060273418A1 3-D inductor and transformer devices in MRAM embedded integrated circuits 失效
标题翻译： 3-D电感和变压器装置在MRAM嵌入式集成电路中
公开(公告)号：US20060273418A1
公开(公告)日：2006-12-07
申请号：US11147599
申请日：2005-06-07
申请人： Young Chung , Robert Baird , Mark Durlam , Bradley Engel
发明人： Young Chung , Robert Baird , Mark Durlam , Bradley Engel
IPC分类号： H01L43/00
CPC分类号： H01L27/222 , G11C11/16 , H01F17/0006 , H01F19/04 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal layer (or layers) as the program lines of the MRAM architecture. Any available metal layer in addition to the program line layers can be added to the inductance element to enhance its efficiency. The concurrent fabrication of the MRAM architecture and the inductance element facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
摘要翻译：集成电路器件包括磁性随机存取存储器（“MRAM”）结构以及使用相同的制造工艺技术在同一衬底上形成的至少一个电感元件。可以是电感器或变压器的电感元件形成在与MRAM架构的程序行相同的金属层（或多层）上。除了编程线层之外，可以将任何可用的金属层添加到电感元件以提高其效率。 MRAM架构和电感元件的并发制造有助于在衬底的有源电路块上可用的物理空间的有效和成本有效的使用，从而导致三维集成。

7. 发明授权

US08901924B2 Apparatus and method for sequentially resetting elements of a magnetic sensor array 有权
标题翻译：用于顺序复位磁传感器阵列的元件的装置和方法
公开(公告)号：US08901924B2
公开(公告)日：2014-12-02
申请号：US13031558
申请日：2011-02-21
申请人： Bradley Engel , Phillip Mather
发明人： Bradley Engel , Phillip Mather
IPC分类号： G01R33/02 , G01R33/09 , B82Y25/00
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/0023 , G01R33/09 , G01R33/093
摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.
摘要翻译：半导体工艺和设备提供具有三个差分传感器配置的高性能磁场传感器，其仅需要两个不同的钉扎轴，其中每个差分传感器由具有四个非屏蔽磁隧道结传感器阵列的惠斯登电桥结构形成，每个包括磁场脉冲发生器，用于选择性地施加场脉冲以稳定或恢复感测层的易轴磁化，以在小磁场测量之前以正确的配置定向磁化。场脉冲顺序地施加到惠斯登电桥结构的感测层的组，从而允许更高的电流脉冲或更大的传感器阵列尺寸以获得最大的信噪比。

8. 发明申请

US20070236105A1 Oscillator and method of manufacture 有权
标题翻译：振荡器和制造方法
公开(公告)号：US20070236105A1
公开(公告)日：2007-10-11
申请号：US11225973
申请日：2005-09-13
申请人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
发明人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
IPC分类号： H01L41/00
CPC分类号： H01L43/08 , H03B15/006
摘要： An oscillator includes at least one of: (i) a parallel array of resistors (420, 421, 422, 701, 801, 901, 902) or magnetoresistive contacts to a magnetoresistive film (120, 320); and (ii) a series array of resistors (620, 621, 702, 902) or magnetoresistive contacts to individualized areas of at least one magnetoresistive film.
摘要翻译：振荡器包括以下至少一个：（i）电阻器（420,421,422,701,801,901,902）的并联阵列或磁阻膜（120,320）的磁阻触点; 和（ii）至少一个磁阻膜的个体化区域的一系列电阻器（620,621,702,902）或磁阻触点。

9. 发明申请

US20060108620A1 Reduced power magnetoresistive random access memory elements 有权
公开(公告)号：US20060108620A1
公开(公告)日：2006-05-25
申请号：US10997118
申请日：2004-11-24
申请人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
发明人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

10. 发明申请

US20130306272A1 HEAT EXCHANGER, AND METHOD FOR TRANSFERRING HEAT 有权
公开(公告)号：US20130306272A1
公开(公告)日：2013-11-21
申请号：US13585934
申请日：2012-08-15
申请人： Mark Johnson , Bradley Engel
发明人： Mark Johnson , Bradley Engel
IPC分类号： F28D15/00
CPC分类号： F28F1/10 , F25B13/00 , F25B39/00 , F25B2313/02741 , F28D1/0417 , F28D1/0435 , F28D1/05341 , F28F1/022 , F28F1/126
摘要： A heat exchanger is provided to efficiently transfer heat between air and a flow of refrigerant in a reversing air-sourced heat pump system. When the system is operating in heat pump mode, a flow of air is directed through the heat exchanger and is heated by the refrigerant. A portion of the flow of air is prevented from being heated by the refrigerant in a first section of the heat exchanger, and is used to sub-cool the refrigerant in another section of the heat exchanger after the remaining air has been heated by the refrigerant. The same heat exchanger can be used to cool a flow of air using expanded refrigerant when the system is operating in an air conditioning (cooling) mode.

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