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1. 发明申请

US20070236105A1 Oscillator and method of manufacture 有权
标题翻译：振荡器和制造方法
公开(公告)号：US20070236105A1
公开(公告)日：2007-10-11
申请号：US11225973
申请日：2005-09-13
申请人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
发明人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
IPC分类号： H01L41/00
CPC分类号： H01L43/08 , H03B15/006
摘要： An oscillator includes at least one of: (i) a parallel array of resistors (420, 421, 422, 701, 801, 901, 902) or magnetoresistive contacts to a magnetoresistive film (120, 320); and (ii) a series array of resistors (620, 621, 702, 902) or magnetoresistive contacts to individualized areas of at least one magnetoresistive film.
摘要翻译：振荡器包括以下至少一个：（i）电阻器（420,421,422,701,801,901,902）的并联阵列或磁阻膜（120,320）的磁阻触点; 和（ii）至少一个磁阻膜的个体化区域的一系列电阻器（620,621,702,902）或磁阻触点。

2. 发明申请

US20060087880A1 Spin-transfer based MRAM using angular-dependent selectivity 有权
标题翻译：基于旋转转移的MRAM使用角度依赖选择性
公开(公告)号：US20060087880A1
公开(公告)日：2006-04-27
申请号：US10971741
申请日：2004-10-22
申请人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
发明人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.
摘要翻译：可以使用自旋转移反射模式技术来选择性地写入磁性随机存取存储器（“MRAM”）器件。 MRAM阵列内的指定MRAM单元的选择性通过自旋转移开关电流与偏振器元件的磁化与MRAM单元中的自由磁性元件之间的相对角度的相关性来实现。偏振器元件具有可变响应于可应用电流例如数字线电流而改变的磁化强度。当偏振器元件的磁化处于自然默认方向时，MRAM单元格中的数据将被保留。当偏振器元件的磁化被切换时，可以响应于相对低的写入电流的应用来写入MRAM单元中的数据。

3. 发明申请

US20140217528A1 SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME 有权
标题翻译：旋转磁阻记忆元件及其制造方法
公开(公告)号：US20140217528A1
公开(公告)日：2014-08-07
申请号：US14219532
申请日：2014-03-19
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

4. 发明授权

US08686484B2 Spin-torque magnetoresistive memory element and method of fabricating same 有权
标题翻译：自旋扭矩磁阻存储元件及其制造方法
公开(公告)号：US08686484B2
公开(公告)日：2014-04-01
申请号：US13158171
申请日：2011-06-10
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

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