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1. 发明授权

US06395447B1 Resist material and fabrication method thereof 有权
标题翻译：抗蚀材料及其制造方法
公开(公告)号：US06395447B1
公开(公告)日：2002-05-28
申请号：US09627786
申请日：2000-07-27
申请人： Tetsuyoshi Ishii , Toshiaki Tamamura , Hiroshi Nozawa , Kenji Kurihara
发明人： Tetsuyoshi Ishii , Toshiaki Tamamura , Hiroshi Nozawa , Kenji Kurihara
IPC分类号： G03F7023
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0085 , G03F7/0226 , G03F7/039 , G03F7/09 , Y10S427/102 , Y10S428/913 , Y10S430/143 , Y10S524/905 , Y10T428/25 , Y10T428/31511 , Y10T428/31855
摘要： A resist material having a resist and particles mixed into the resist, a major component of the particles being a cluster of carbon atoms, is provided. A method for fabricating a resist material is also provided, the method repeatedly performing: a first step of coating a substrate with a resist film; and a second step of depositing particles whose major component is a cluster of carbon atoms on the resist film. Accordingly, a resist film with high etching resistance can be obtained, and it is possible to realize a reduction in the thickness of the resist film, improvements of contrast of resist patterns; resist sensitivity; heat resistance of resist films; mechanical strength of resist patterns; and further, stabilization of resist sensitivity. Therefore, highly precise fine pattern fabrication can be realized.
摘要翻译：提供了具有抗蚀剂的抗蚀剂材料和混入抗蚀剂中的颗粒，颗粒的主要成分是碳原子簇。还提供了制造抗蚀剂材料的方法，该方法重复地进行：第一步骤，用抗蚀剂膜涂覆基底; 以及将主要成分为碳原子簇的粒子沉积在抗蚀剂膜上的第二步骤。因此，可以获得具有高耐腐蚀性的抗蚀剂膜，并且可以实现抗蚀剂膜的厚度的减小，抗蚀剂图案的对比度的改善; 抗敏性; 抗蚀剂膜的耐热性; 抗蚀剂图案的机械强度; 并进一步提高抗光敏度的稳定性。因此，可以实现高精度的精细图案制造。

2. 发明授权

US06177231B1 Resist material and fabrication method thereof 失效
标题翻译：抗蚀材料及其制造方法
公开(公告)号：US06177231B1
公开(公告)日：2001-01-23
申请号：US08870273
申请日：1997-06-06
申请人： Tetsuyoshi Ishii , Toshiaki Tamamura , Hiroshi Nozawa , Kenji Kurihara
发明人： Tetsuyoshi Ishii , Toshiaki Tamamura , Hiroshi Nozawa , Kenji Kurihara
IPC分类号： B32B2714
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0085 , G03F7/0226 , G03F7/039 , G03F7/09 , Y10S427/102 , Y10S428/913 , Y10S430/143 , Y10S524/905 , Y10T428/25 , Y10T428/31511 , Y10T428/31855
摘要： A resist material having a resist and particles mixed into the resist, a major component of the particles being a cluster of carbon atoms, is provided. A method for fabricating a resist material is also provided, the method repeatedly performing: a first step of coating a substrate with a resist film; and a second step of depositing particles whose major component is a cluster of carbon atoms on the resist film. Accordingly, a resist film with high etching resistance can be obtained, and it is possible to realize a reduction in the thickness of the resist film, improvements of contrast of resist patterns; resist sensitivity; heat resistance of resist films; mechanical strength of resist patterns; and further, stabilization of resist sensitivity. Therefore, highly precise fine pattern fabrication can be realized.
摘要翻译：提供了具有抗蚀剂的抗蚀剂材料和混入抗蚀剂中的颗粒，颗粒的主要成分是碳原子簇。还提供了制造抗蚀剂材料的方法，该方法重复地进行：第一步骤，用抗蚀剂膜涂覆基底; 以及将主要成分为碳原子簇的粒子沉积在抗蚀剂膜上的第二步骤。因此，可以获得具有高耐腐蚀性的抗蚀剂膜，并且可以实现抗蚀剂膜的厚度的减小，抗蚀剂图案的对比度的改善; 抗敏性; 抗蚀剂膜的耐热性; 抗蚀剂图案的机械强度; 并进一步提高抗光敏度的稳定性。因此，可以实现高精度的精细图案制造。

3. 发明授权

US4610078A Method of making high density dielectric isolated gate MOS transistor 失效
标题翻译：制造高密度介质隔离栅MOS晶体管的方法
公开(公告)号：US4610078A
公开(公告)日：1986-09-09
申请号：US684750
申请日：1984-12-21
申请人： Naohiro Matsukawa , Hiroshi Nozawa
发明人： Naohiro Matsukawa , Hiroshi Nozawa
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L21/308 , H01L21/265
CPC分类号： H01L29/66575 , H01L21/28 , Y10S148/082
摘要： There is disclosed a method of manufacturing a semiconductor device comprising a step of forming an isolation film having a patterned hole on a major surface of a semiconductor substrate of a P conductivity type, the wall of the isolation film defining the patterned hole having a large step, a step of forming a polysilicon layer on the major surface of the structure, a step of forming a first interlaid SiO.sub.2 layer on the polysilicon layer, a step of patterning the SiO.sub.2 layer and polysilicon layer using reactive ion etching process, thereby forming on the region of the substrate a gate electrode and a first SiO.sub.2 film superposed thereon, the continuous side wall of the gate electrode and first SiO.sub.2 film having a large step, a step of implanting an impurity ion into the substrate using the first SiO.sub.2 film as a mask, thereby forming an impurity diffused region of an N conductivity type in the substrate, a step of forming a second interlaid SiO.sub.2 layer on the major surface of the structure, and a step of applying reactive ion etching to the second SiO.sub.2 layer, thereby forming a contact hole in the second SiO.sub.2 layer leading to the impurity diffused region, while leaving part of the second SiO.sub.2 layer on the side walls of said isolation film, gate electrode and first SiO.sub.2 film.
摘要翻译：公开了一种制造半导体器件的方法，包括在P导电型半导体衬底的主表面上形成具有图案化孔的隔离膜的步骤，隔离膜的壁限定具有大步长的图案化孔在所述结构体的主表面上形成多晶硅层的工序，在所述多晶硅层上形成第一层叠SiO 2层的工序，使用反应离子蚀刻工序对所述SiO 2层和多晶硅层进行构图的工序，所述基板的区域是栅电极和叠置在其上的第一SiO 2膜，所述栅电极的连续侧壁和具有大台阶的第一SiO 2膜，使用所述第一SiO 2膜作为掩模将杂质离子注入所述基板的步骤，从而在衬底中形成N导电类型的杂质扩散区域，在该结构的主表面上形成第二层间SiO 2层的步骤，以及向第二SiO 2层施加反应离子蚀刻的步骤，从而在导致杂质扩散区域的第二SiO 2层中形成接触孔，同时在该隔离膜的侧壁上留下一部分第二SiO 2层，栅电极和第一个SiO 2膜。

4. 发明授权

US4441941A Method for manufacturing a semiconductor device employing element isolation using insulating materials 失效
标题翻译：使用绝缘材料制造使用元件隔离的半导体器件的方法
公开(公告)号：US4441941A
公开(公告)日：1984-04-10
申请号：US240300
申请日：1981-03-04
申请人： Hiroshi Nozawa
发明人： Hiroshi Nozawa
IPC分类号： H01L21/033 , H01L21/321 , H01L21/762 , H01L21/22
CPC分类号： H01L21/76227 , H01L21/033 , H01L21/32105 , Y10S438/911
摘要： A method for element isolation utilizing insulating materials on a semiconductor substrate in which an oxidizable material layer of polycrystalline silicon or the like is formed overlying the substrate surface, the oxidizable material layer disposed at the element-isolation-forming regions is oxidized using an oxidation mask, the oxidation mask is removed and, if necesary at least part of the unoxidized oxidizable material below the mask is removed. Predetermined processes such as oxidation and diffusion are performed thereafter to form semiconductor elements such as MOS transistors and bipolar transistors with high packaging density and reliability.
摘要翻译：使用半导体衬底上的绝缘材料进行元件隔离的方法，其中在衬底表面上形成多晶硅等的可氧化材料层，使用氧化掩模氧化设置在元件隔离形成区域处的可氧化材料层，除去氧化掩模，并且如果必要，去除掩模下面的至少部分未氧化的可氧化材料。之后进行氧化，扩散等预定处理，形成具有高封装密度和可靠性的MOS晶体管，双极晶体管等半导体元件。

5. 发明授权

US3956790A Method of apparatus for removing dust from the surface of a moving web 失效
标题翻译：从移动网的表面除去灰尘的装置的方法
公开(公告)号：US3956790A
公开(公告)日：1976-05-18
申请号：US491009
申请日：1974-07-23
申请人： Mamoru Ishiwata , Katzutaka Yoshida , Hiroshi Nozawa
发明人： Mamoru Ishiwata , Katzutaka Yoshida , Hiroshi Nozawa
IPC分类号： G03C1/74 , A47L5/38
CPC分类号： G03C1/74 , G03C2001/7429
摘要： Dust is removed from a running web by a counterflow liquid bath and downstream application of one or more high velocity air jets to a localized convex curvature of the web, said application of high velocity air jets being accompanied by application of vacuum pressure to remove the mist created by the air jets.
摘要翻译：通过逆流液浴从运行的纸幅中除去灰尘，并将一个或多个高速空气喷嘴下游施加到纸幅的局部凸曲面，所述施加高速空气喷嘴伴随着施加真空压力以除去雾由空中飞机创造。

6. 发明授权

US07891079B2 Manufacturing apparatus of a head gimbal assembly and manufacturing method of a head gimbal assembly 有权
标题翻译：头万向架组件的制造装置和头万向架组件的制造方法
公开(公告)号：US07891079B2
公开(公告)日：2011-02-22
申请号：US12489616
申请日：2009-06-23
申请人： Hiroshi Nozawa , Yukio Kato
发明人： Hiroshi Nozawa , Yukio Kato
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/4826 , B21D5/04 , Y10T29/49025 , Y10T29/49027 , Y10T29/4903 , Y10T29/49032 , Y10T29/53122 , Y10T29/53165
摘要： A bending apparatus of a head gimbal assembly includes a suction unit configured to attract the head gimbal assembly, a movement unit configured to move a long tail connected to a terminal part, a stopper against which the moved long tail is butted, a transmission type optical sensor configured to detect that the long tail is positioned to the stopper, a tail holder configured to hold a part of the long tail on a work table, a roller configured to compress the terminal part against the tail holder and to bend the terminal part relative to the long tail at a right angle, and a controller configured to control, based on a detection result of the transmission type optical sensor, a movement of the tail holder to the work table and a movement of the roller to the tail holder.
摘要翻译：头万向架组件的弯曲装置包括：吸引单元，其构造成吸引头部万向架组件;移动单元，被配置为移动连接到端子部分的长尾端;移动的长尾巴对接的止动件;透射型光学传感器，被配置为检测长尾部位于止动件上，尾部保持器构造成将长尾巴的一部分保持在工作台上;辊子，其构造成压缩终端部件抵靠尾座并弯曲终端部件相对并且控制器被配置为基于透射型光学传感器的检测结果来控制尾座到工作台的移动以及辊到尾部保持器的移动。

7. 发明申请

US20080213519A1 Polypropylene Film and Laminated Material Thereof 有权
标题翻译：聚丙烯薄膜及其层压材料
公开(公告)号：US20080213519A1
公开(公告)日：2008-09-04
申请号：US11791866
申请日：2005-11-28
申请人： Yoichi Matsuura , Masanori Takeuchi , Kouji Kataoka , Hiroshi Nozawa
发明人： Yoichi Matsuura , Masanori Takeuchi , Kouji Kataoka , Hiroshi Nozawa
IPC分类号： B32B27/32 , C08L23/08 , C08L23/06 , B32B15/08 , A22C13/00 , C08L23/12 , C08L23/14
CPC分类号： B32B15/08 , B32B15/20 , B32B27/08 , B32B27/32 , B32B2270/00 , B32B2307/31 , B32B2307/412 , B32B2439/46 , B32B2439/70 , C08F297/08 , C08F297/083 , C08J5/18 , C08J2323/14 , C08L23/04 , C08L23/08 , C08L23/0815 , C08L23/10 , C08L23/142 , C08L23/16 , C08L53/00 , C08L2205/02 , C08L2666/02 , C08L2666/04 , C09J153/00 , Y10T428/1324 , Y10T428/1334 , Y10T428/1338 , Y10T428/1352 , Y10T428/31692 , Y10T428/31938 , C08L2666/06
摘要： A polypropylene film comprising 70-90 wt. % polymer (a), 2-10 wt. % polymer (b), 2-10 wt. % polymer (c) and 3-20 wt. % polymer (d) and having a haze of 8-30% (wherein the polymer (a) is a block copolymer prepared by producing a polymer part (component a1) by polymerizing in a first step monomers composed mainly of propylene in the absence of an inert solvent and producing an ethylene/propylene copolymer part (component a2) in a second step by polymerization subsequently carried out in a gas phase; the polymer (b) is an ethylene-based polymer having a density of 0.91-0.97 g/cm3 and a melt flow rate of 5-30 g/10 min; the polymer (c) is an ethylene/α-olefin random copolymer having a density of 0.86-0.90 g/cm3 and a melt flow rate of 0.3-5 g/10 min; and the polymer (d) comprises two or more propylene-based polymers different in molecular weight from each other).
摘要翻译：包含70-90重量％％聚合物（a），2-10重量％％聚合物（b），2-10重量％％聚合物（c）和3-20wt。％聚合物（d），雾度为8-30％（其中聚合物（a）是通过在第一步中聚合制备聚合物部分（组分a1）而制备的嵌段共聚物，其中主要由丙烯组成的单体在不存在惰性溶剂，并在第二步中通过在气相中进行聚合制备乙烯/丙烯共聚物部分（组分a2）;聚合物（b）是密度为0.91-0.97g / cm 3的乙烯类聚合物 3，熔体流动速率为5-30g / 10min;聚合物（c）是密度为0.86-0.90g / cm 3的乙烯/α-烯烃无规共聚物并且熔体流动速率为0.3-5g / 10min;聚合物（d）包含两种或更多种不同分子量的基于丙烯的聚合物）。

8. 发明授权

US07039847B2 Coding-decoding device and method for conversion of binary sequences 失效
标题翻译：用于转换二进制序列的编码解码装置和方法
公开(公告)号：US07039847B2
公开(公告)日：2006-05-02
申请号：US10238984
申请日：2002-09-09
申请人： Hiroshi Nozawa , Shinzo Koyama , Masao Takayama , Yoshikazu Fujimori
发明人： Hiroshi Nozawa , Shinzo Koyama , Masao Takayama , Yoshikazu Fujimori
IPC分类号： G11C29/00
CPC分类号： G11C7/1006
摘要： A coding-decoding device and a coding-decoding method that take less time for coding and decoding are provided while using less number of logic gates. A memory device 15 substantially stores b pieces of conversion logic equations produced with a conversion logic equation producing device 13. An operation device 17 has a programmable hardware logic circuit to constitute logics sequentially according to plural execution unit logic equations obtained by dividing b pieces of conversion logic equations stored in the memory device 15 into execution units for respective execution unit logic equations using the hardware logic circuit. Besides, the operation device 17 sequentially divides and calculates the second sentences from the first sentences according to the constituted logics. An output device 19 collects and outputs the second sentences calculated with the operation device 17.
摘要翻译：在使用较少数量的逻辑门的同时，提供了编码解码装置和编码解码方法，其中编码解码时间较短。存储器装置15基本上存储由转换逻辑方程产生装置13产生的b个转换逻辑方程式。操作装置17具有可编程硬件逻辑电路，以根据通过使用硬件逻辑电路将存储在存储器件15中的b个转换逻辑方程分成执行单元逻辑方程而获得的多个执行单元逻辑方程来顺序地构成逻辑。此外，操作装置17根据构成的逻辑顺序地分割和计算来自第一句子的第二句子。输出装置19收集并输出用操作装置17计算的第二句子。

9. 发明授权

US6055176A Memory device with processing function 有权
标题翻译：具有处理功能的内存设备
公开(公告)号：US6055176A
公开(公告)日：2000-04-25
申请号：US268972
申请日：1999-03-16
申请人： Keikichi Tamaru , Hiroshi Nozawa , Yoshiro Fujii , Akira Kamisawa
发明人： Keikichi Tamaru , Hiroshi Nozawa , Yoshiro Fujii , Akira Kamisawa
IPC分类号： G11C14/00 , G11C7/00 , G11C7/10 , G11C11/22
CPC分类号： G11C7/1006 , G11C11/22
摘要： It is an object of the present invention to provide a memory device with processing function using less transistors, and capable of operating with simple operation and allows its operation with less trouble. Each of W cells 34 includes a ferroelectric capacitor CF. One end 40 of the ferroelectric capacitor CF is connected to one of data lines D through a transistor T1. The one end 40 of the ferroelectric capacitor CF is connected to an inner data line MW through a transistor T2. The structure of the Q cells 36 is almost the same as that of the W cells 34. Both readout/writing operations of data from the outside of the device are performed by using the data line D. Data read out from both the W cell 34 and the Q cell 36 is sent to the adder 28 and added thereby, and the resultant data of the addition is written to the Q cell 36 through a buffer circuit 32. The memory device with processing function can be realized with a simple structure by using ferroelectric capacitors CF.
摘要翻译：本发明的目的是提供一种具有使用较少晶体管的处理功能的存储器件，并且能够以简单的操作进行操作并允许其操作更少的麻烦。 W单元34中的每一个包括铁电电容器CF。铁电电容器CF的一端40通过晶体管T1连接到数据线D之一。铁电电容器CF的一端40通过晶体管T2连接到内部数据线MW。 Q单元36的结构与W单元34的结构几乎相同。通过使用数据线D来执行来自设备外部的数据的读/写操作。从W单元34读出的数据并且Q单元36被发送到加法器28并由此相加，并且所得到的相加数据通过缓冲电路32写入Q单元36.具有处理功能的存储器件可以通过使用简单的结构来实现铁电电容器CF

10. 发明授权

US5264374A Method of manufacturing a solid state image sensing device 失效
标题翻译：制造固体摄像装置的方法
公开(公告)号：US5264374A
公开(公告)日：1993-11-23
申请号：US694768
申请日：1991-05-02
申请人： Kazunari Watanabe , Hiroshi Nozawa
发明人： Kazunari Watanabe , Hiroshi Nozawa
IPC分类号： H01L27/148 , H01L21/339
CPC分类号： H01L27/14831
摘要： In a solid state image sensing device comprising: a semiconductor substrate; a photosensitive pixel area disposed on the semiconductor substrate for generating signal charges in response to incident light and storing the signal charges; a charge transfer area disposed adjacent to the photosensitive pixel area for transferring the signal charges stored in the photosensitive pixel area; and a transfer electrode provided above the charge transfer area, the solid state image sensing device comprises: a high melting temperature metal layer composed of molybdenum silicide MoSi formed above the transfer electrode and an insulating layer having ample thickness formed between the high melting temperature metal layer and the transfer electrode. The light shielding efficiency can be improved and occurrence of a smear phenomenon can be prevented in the resulting device.
摘要翻译：一种固体摄像装置，包括：半导体衬底; 设置在所述半导体衬底上的光敏像素区域，用于响应于入射光产生信号电荷并存储所述信号电荷; 与光敏像素区域相邻设置的用于传送存储在感光像素区域中的信号电荷的电荷转移区域; 以及设置在所述电荷转移区域之上的转移电极，所述固态图像感测装置包括：形成在所述转移电极上方的由硅化钼MoSi构成的高熔点金属层和在所述高熔点金属层之间形成的具有足够厚度的绝缘层和转印电极。可以提高遮光效率，并且可以防止在所得到的装置中产生污迹现象。

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