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1. 发明申请

US20130316139A1 METHOD FOR MANUFACTURING SILICON SUBSTRATE AND SILICON SUBSTRATE 有权
标题翻译：制造硅基板和硅基板的方法
公开(公告)号：US20130316139A1
公开(公告)日：2013-11-28
申请号：US13982584
申请日：2012-02-02
申请人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
发明人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
IPC分类号： H01L21/02
CPC分类号： H01L21/02027 , C30B29/06 , C30B33/02 , H01L21/3225 , Y10T428/24355
摘要： A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a mariner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y≦0.15X−4.5 when X
摘要翻译：一种硅基板的制造方法，其特征在于，包括：通过将所述硅基板保持在高于1300℃且不大于1300℃的温度，通过快速加热和快速冷却装置对硅基板进行快速热处理硅熔点为1〜60秒，硅基板由通过切克劳斯基法生长的硅单晶锭切片; 以5〜150℃/秒的降温速度进行600〜800℃的温度的第1降温处理。并且在这样的水手中执行第二降温过程，当X <100时，X秒的冷却时间和Y℃/秒的温度降低率达到Y@0.15X-4.5，当X> = 100。

2. 发明申请

US20130098888A1 METHOD FOR HEAT-TREATING WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS 审中-公开
标题翻译：用于加热处理的方法，用于生产硅波的方法，硅波和热处理装置
公开(公告)号：US20130098888A1
公开(公告)日：2013-04-25
申请号：US13807243
申请日：2011-07-15
申请人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
发明人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
IPC分类号： H05B1/00
CPC分类号： H05B1/00 , C30B29/06 , C30B33/02 , H01L21/324 , H01L21/67115
摘要： The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.
摘要翻译：本发明是一种对晶片进行热处理的方法，其特征在于，通过在主表面（第一晶片的主表面）由支撑构件支撑，其中通过控制加热源进行热处理的方法是这样一种方式，使得由支撑构件支撑的第一主表面的温度变为1至25 高于与晶片的第一主表面相对的主表面（第二主表面）的温度。结果，提供了一种用于对晶片进行热处理的方法，当对硅晶片进行热处理时，可以可靠地抑制从晶片支撑位置产生的滑移位错的方法。

3. 发明授权

US09390905B2 Method for manufacturing silicon substrate and silicon substrate 有权
标题翻译：硅衬底和硅衬底的制造方法
公开(公告)号：US09390905B2
公开(公告)日：2016-07-12
申请号：US13982584
申请日：2012-02-02
申请人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
发明人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
IPC分类号： H01L21/02 , H01L21/322 , C30B29/06 , C30B33/02
CPC分类号： H01L21/02027 , C30B29/06 , C30B33/02 , H01L21/3225 , Y10T428/24355
摘要： A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a manner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y≦0.15X-4.5 when X
摘要翻译：一种硅基板的制造方法，其特征在于，包括：通过将所述硅基板保持在高于1300℃且不大于1300℃的温度，通过快速加热和快速冷却装置对硅基板进行快速热处理硅熔点为1〜60秒，硅基板由通过切克劳斯基法生长的硅单晶锭切片; 以5〜150℃/秒的降温速度进行600〜800℃的温度的第1降温处理。进行第二降温处理，使X秒的冷却时间和Y℃/秒的温度降低率满足Y＆lt; ll;当X <100并满足Y＆NlE时为0.15X-4.5;X≥100时为10 。

4. 发明申请

US20130093060A1 METHOD FOR PRODUCING SILICON WAFER AND SILICON WAFER 审中-公开
标题翻译：生产硅波和硅波的方法
公开(公告)号：US20130093060A1
公开(公告)日：2013-04-18
申请号：US13704905
申请日：2011-06-07
申请人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
发明人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
IPC分类号： H01L21/26 , H01L29/06
CPC分类号： H01L21/26 , C30B15/00 , C30B29/06 , C30B33/02 , H01L21/3225 , H01L29/0684
摘要： A silicon wafer and method for producing a silicon wafer, including at least: a first heat treatment process in which rapid heat treatment is performed on the wafer by using a rapid heating/cooling apparatus in an atmosphere containing at least one of nitride film formation atmospheric gas, rare gas, and oxidizing gas at a temperature higher than 1300° C. and lower than or equal to a silicon melting point for 1 to 60 seconds; and a second heat treatment process in which temperature and atmosphere are controlled to suppress generation of a defect caused by a vacancy in the wafer and rapid heat treatment is performed on the wafer. Therefore, RIE defects such as oxide precipitates, COPs, and OSFs are not present at a depth of at least 1 μm from the surface, which becomes a device fabrication region, and the lifetime is 500 μsec or longer.
摘要翻译：一种硅晶片和硅晶片的制造方法，其至少包括：第一热处理工序，其中在包含氮化膜形成大气中的至少一种的气氛中使用快速加热/冷却装置在晶片上进行快速热处理气体，稀有气体和氧化气体，温度高于1300℃，低于或等于硅熔点1〜60秒; 以及第二热处理工艺，其中控制温度和气氛以抑制由晶片空位引起的缺陷的产生，并且对晶片进行快速热处理。因此，RIE缺陷如氧化物沉淀物，COP和OSF在距离表面至少1um的深度处不存在，其成为器件制造区域，并且寿命为500μs或更长。

5. 发明申请

US20110001219A1 SILICON SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SILICON SINGLE CRYSTAL OR METHOD FOR PRODUCING SILICON SINGLE CRYSTAL WAFER, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：硅单晶，用于生产硅单晶的方法或用于生产硅单晶的方法和半导体器件
公开(公告)号：US20110001219A1
公开(公告)日：2011-01-06
申请号：US12918896
申请日：2009-02-19
申请人： Koji Ebara , Shizuo Igawa , Tetsuya Oka
发明人： Koji Ebara , Shizuo Igawa , Tetsuya Oka
IPC分类号： H01L29/04 , H01L21/20 , C30B15/20
CPC分类号： C30B15/00 , C30B29/06 , C30B33/005
摘要： The present invention is a silicon single crystal wafer grown by the Czochralski method, the silicon single crystal wafer in which an wafer entire plane is an N region located outside OSFs which are generated in the form of a ring when thermal oxidation treatment is performed and contains no defect region detected by the RIE process. As a result, a silicon single crystal wafer which belongs to none of a vacancy-rich V region, an OSF region, a Dn region in an Nv region, the Dn region in which a defect detected by the Cu deposition process is generated, and an interstitial silicon-rich I region and can improve the TDDB characteristic which is the time dependent breakdown characteristic of an oxide film more reliably than a known silicon single crystal wafer is provided, and the silicon single crystal wafer is provided under stable production conditions.
摘要翻译：本发明是通过切克劳斯基法生长的硅单晶晶片，其中晶片整面是位于OSF外部的N区域的硅单晶晶片，其在进行热氧化处理时以环形式生成并且包含没有RIE过程检测到缺陷区域。结果，不产生空穴浓度V区域，OSF区域，Nv区域中的Dn区域，产生由Cu沉积工艺检测到的缺陷的Dn区域的硅单晶晶片，以及间隙富硅I区域，并且可以提供比已知的硅单晶晶片更可靠地提高氧化膜的时间依赖性击穿特性的TDDB特性，并且在稳定的生产条件下提供硅单晶晶片。

6. 发明授权

US06589336B1 Production method for silicon epitaxial wafer and silicon epitaxial wafer 失效
标题翻译：硅外延晶片和硅外延晶片的生产方法
公开(公告)号：US06589336B1
公开(公告)日：2003-07-08
申请号：US09889020
申请日：2001-07-10
申请人： Koji Ebara , Hiroki Ose , Yasuo Kasahara
发明人： Koji Ebara , Hiroki Ose , Yasuo Kasahara
IPC分类号： C30B2522
CPC分类号： H01L21/26513 , H01L21/324 , H01L21/3247 , H01L21/743 , H01L29/0821 , H01L29/66272 , H01L29/66712 , H01L29/732 , H01L29/7809
摘要： Performing the post-implantation annealing for recovering crystallinity in a hydrogen atmosphere can successfully suppress the surface roughening on the ion-implanted layers without pre-implantation oxidation. This allows omission of the pre-implantation oxidation and allows ion implantation using only a photoresist film as a mask in a method for producing an epitaxial wafer having buried ion-implanted layers. Since an intentional formation of an oxide film, including such pre-implantation oxidation, on an epitaxial layer is omitted, the number of repetition of the thermal history exerted to the buried ion-implanted layers can be reduced, which effectively suppresses lateral diffusion of implanted ions. Since the formation and removal of the oxide film is thus no more necessary, the number of process steps in the production of the epitaxial wafer can dramatically be reduced.
摘要翻译：在氢气氛中进行回收结晶度的注入后退火可以成功地抑制离子注入层上的表面粗糙化而无需预植入氧化。这允许省略预植入氧化，并且允许在用于制造具有埋入的离子注入层的外延晶片的方法中仅使用光致抗蚀剂膜作为掩模的离子注入。由于省略了在外延层上有意形成包括这种预植入氧化的氧化膜，所以能够减少施加到掩埋离子注入层的热历程重复次数，这有效地抑制了植入物的横向扩散离子。由于不需要氧化膜的形成和去除，因此可以显着地减少外延晶片生产中的工艺步骤数量。

7. 发明授权

US08377202B2 Method for manufacturing silicon wafer and silicon wafer manufactured by this method 有权
标题翻译：通过该方法制造硅晶片和硅晶片的方法
公开(公告)号：US08377202B2
公开(公告)日：2013-02-19
申请号：US12227907
申请日：2007-05-17
申请人： Koji Ebara
发明人： Koji Ebara
IPC分类号： C30B15/14
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02 , H01L21/268 , H01L21/76229
摘要： A method for manufacturing a silicon wafer having a defect-free region in a surface layer, in which at least only a surface layer region to a predetermined depth from a front surface of a silicon wafer to be processed is subjected to heat treatment at a temperature of not less than 1100 degrees C. for not less than 0.01 msec to not more than 1 sec, to thereby make the surface layer defect-free. As a result of this, there is provided a method for manufacturing a silicon wafer, in which a DZ layer without generation of crystal defects from the front surface to a constant depth can be uniformly formed, and oxide precipitates having a steep profile inside the wafer can be secured and controlled with a high degree of accuracy.
摘要翻译：一种用于制造具有表层的无缺陷区域的硅晶片的方法，其中至少只有从待处理的硅晶片的前表面到预定深度的表面层区域在温度不低于1100℃，不小于0.01毫秒至不超过1秒，从而使表面层无缺陷。作为其结果，提供了一种制造硅晶片的方法，其中可以均匀地形成从前表面到恒定深度而不产生晶体缺陷的DZ层，并且在晶片内部具有陡峭轮廓的氧化物沉淀可以高精度地固定和控制。

8. 发明申请

US20120001301A1 ANNEALED WAFER, METHOD FOR PRODUCING ANNEALED WAFER AND METHOD FOR FABRICATING DEVICE 审中-公开
标题翻译：抛光轮，生产抛光轮的方法和制造装置的方法
公开(公告)号：US20120001301A1
公开(公告)日：2012-01-05
申请号：US13255182
申请日：2010-03-17
申请人： Koji Ebara , Yoshinori Hayamizu , Hiroyasu Kikuchi
发明人： Koji Ebara , Yoshinori Hayamizu , Hiroyasu Kikuchi
IPC分类号： H01L29/30 , H01L21/322
CPC分类号： C30B29/06 , C30B33/02 , H01L21/3225
摘要： An annealed wafer obtained by performing rapid thermal annealing on a silicon single crystal wafer sliced from a silicon single crystal ingot in which an entire plane is an OSF region, an N region outside an OSF region, or a mixed region thereof, the silicon single crystal ingot being grown by the Czochralski method, in which RIE defects do not exist in a region having at least a depth of 1 μm from a surface, a good chip yield of a TDDB characteristic is 80% or more, and a depth of a region where an oxygen concentration is decreased due to outward diffusion is within 3 μm from the surface, and a method for producing an annealed wafer.
摘要翻译：通过对从其中整个平面是OSF区域，OSF区域外部的N区域或其混合区域的硅单晶锭切片的硅单晶晶片进行快速热退火而获得的退火晶片，所述硅单晶铸锭通过Czochralski法生长，其中在距离表面至少具有1μm深度的区域中不存在RIE缺陷，TDDB特性的良好的切屑产率为80％以上，区域的深度其中由于向外扩散而导致的氧浓度降低在距表面3微米以内，以及退火晶片的制造方法。

9. 发明授权

US07839426B2 Time recorder 有权
标题翻译：时间记录仪
公开(公告)号：US07839426B2
公开(公告)日：2010-11-23
申请号：US12341100
申请日：2008-12-22
申请人： Koji Ebara
发明人： Koji Ebara
IPC分类号： B41J2/32 , B41J2/235 , B41J32/00 , G01D15/20
CPC分类号： G07C1/08 , B41J35/16 , G07C3/06 , G07C5/06
摘要： A time recorder includes a print head, a ribbon cassette swingably supported and having an ink ribbon applied with a different colors in a width direction, and a cam for swinging the ribbon cassette to change a position of the ink ribbon against the print head in the width direction of the ink ribbon and to change a color to be printed on time card, further comprising a first stopper and a second stopper for limiting a rotational range of the cam.
摘要翻译：时间记录器包括打印头，可旋转地支撑并具有在宽度方向上施加不同颜色的墨带的色带盒，以及用于使色带盒摆动以使墨带位于打印头中的位置的凸轮并且更改要在时间卡上打印的颜色，还包括用于限制凸轮的旋转范围的第一止动件和第二止动件。

10. 发明申请

US20090000535A1 Method For Manufacturing Silicon Single Crystal Wafer 审中-公开
标题翻译：制造硅单晶硅片的方法
公开(公告)号：US20090000535A1
公开(公告)日：2009-01-01
申请号：US12087742
申请日：2006-12-21
申请人： Koji Ebara
发明人： Koji Ebara
IPC分类号： C30B15/14
CPC分类号： H01L21/3225 , C30B15/04 , C30B15/203 , C30B29/06 , C30B33/02
摘要： The present invention provides a method for manufacturing a silicon single crystal wafer by which a silicon single crystal ingot is pulled based on a Czochralski method and a rapid thermal annealing is performed with respect to a wafer that is sliced out from the silicon single crystal ingot and has a whole area in a radial direction formed of N region, wherein a heat treatment at 800 to 1100° C. as a heat treatment temperature for two hours or below as a hear treatment time is carried out after the rapid thermal annealing while adjusting the heat treatment temperature and the heat treatment time so that at least diffusion distances of vacancies as point defects injected by the rapid thermal annealing become longer than diffusion distances of the vacancies by a heat treatment performed at 800° C. for 30 minutes, thereby annihilating a vacancy type defect. As a result, there is provided the manufacturing method capable of inexpensively manufacturing a silicon wafer that can assure a DZ layer with a sufficient thickness in a wafer front surface layer region and can also assure a sufficient quantity of oxide precipitates functioning as gettering sites in a bulk region on an earlier stage of a heat treatment in a device process.
摘要翻译：本发明提供一种用于制造硅单晶晶片的方法，其中基于切克劳斯基法（Czochralski method）拉制硅单晶锭，并且相对于从硅单晶锭切片的晶片进行快速热退火，以及具有由N区形成的沿径向的整个面积，其中在快速热退火之后进行800℃至1100℃作为处理时间的2小时以上的热处理温度的热处理，同时调整热处理温度和热处理时间，使得至少通过快速热退火注入的点缺陷的空位的扩散距离比通过在800℃进行30分钟的热处理的空位的扩散距离变得更长，从而湮灭空缺型缺陷。结果，提供了能够廉价地制造硅晶片的制造方法，该硅晶片可以确保在晶片前表面层区域中具有足够厚度的DZ层，并且还可以确保足够量的作为吸收位置的氧化物沉淀物在在装置过程中的热处理的早期阶段的大块区域。

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