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1. 发明申请

US20130316139A1 METHOD FOR MANUFACTURING SILICON SUBSTRATE AND SILICON SUBSTRATE 有权
标题翻译：制造硅基板和硅基板的方法
公开(公告)号：US20130316139A1
公开(公告)日：2013-11-28
申请号：US13982584
申请日：2012-02-02
申请人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
发明人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
IPC分类号： H01L21/02
CPC分类号： H01L21/02027 , C30B29/06 , C30B33/02 , H01L21/3225 , Y10T428/24355
摘要： A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a mariner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y≦0.15X−4.5 when X
摘要翻译：一种硅基板的制造方法，其特征在于，包括：通过将所述硅基板保持在高于1300℃且不大于1300℃的温度，通过快速加热和快速冷却装置对硅基板进行快速热处理硅熔点为1〜60秒，硅基板由通过切克劳斯基法生长的硅单晶锭切片; 以5〜150℃/秒的降温速度进行600〜800℃的温度的第1降温处理。并且在这样的水手中执行第二降温过程，当X <100时，X秒的冷却时间和Y℃/秒的温度降低率达到Y@0.15X-4.5，当X> = 100。

2. 发明授权

US4724210A Method for purification of influenza virus 失效
标题翻译：流感病毒纯化方法
公开(公告)号：US4724210A
公开(公告)日：1988-02-09
申请号：US764128
申请日：1985-08-09
申请人： Tetsuya Oka , Kunio Ohkuma , Tetsuo Kawahara , Mitsuo Sakoh
发明人： Tetsuya Oka , Kunio Ohkuma , Tetsuo Kawahara , Mitsuo Sakoh
IPC分类号： C12N15/09 , A61K39/145 , C12N7/00 , C12N7/02 , C12R1/91 , A61K39/12
CPC分类号： C12N7/00 , A61K39/12 , A61K39/145 , C12N2760/16134 , C12N2760/16151
摘要： Disclosed is a method for the purification of an influenza virus, which comprises subjecting a solution containing the influenza virus to column chromatography using, as a gel for chromatography, a sulfuric acid ester of cellulose or a crosslinked polysaccharide. The method can provide highly purified influenza virus which is useful for obtaining an effective vaccine against influenza.
摘要翻译：公开了一种用于纯化流感病毒的方法，其包括使用含有流感病毒的溶液进行柱色谱，使用色谱凝胶作为纤维素或交联多糖的硫酸酯。该方法可以提供高度纯化的流感病毒，其可用于获得针对流感的有效疫苗。

3. 发明申请

US20130098888A1 METHOD FOR HEAT-TREATING WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS 审中-公开
标题翻译：用于加热处理的方法，用于生产硅波的方法，硅波和热处理装置
公开(公告)号：US20130098888A1
公开(公告)日：2013-04-25
申请号：US13807243
申请日：2011-07-15
申请人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
发明人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
IPC分类号： H05B1/00
CPC分类号： H05B1/00 , C30B29/06 , C30B33/02 , H01L21/324 , H01L21/67115
摘要： The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.
摘要翻译：本发明是一种对晶片进行热处理的方法，其特征在于，通过在主表面（第一晶片的主表面）由支撑构件支撑，其中通过控制加热源进行热处理的方法是这样一种方式，使得由支撑构件支撑的第一主表面的温度变为1至25 高于与晶片的第一主表面相对的主表面（第二主表面）的温度。结果，提供了一种用于对晶片进行热处理的方法，当对硅晶片进行热处理时，可以可靠地抑制从晶片支撑位置产生的滑移位错的方法。

4. 发明申请

US20110214167A1 IMAGE PROCESSING APPARATUS, IMAGE PROCESSING SYSTEM, AND DISPLAY SCREEN CONTROLLING METHOD 审中-公开
标题翻译：图像处理设备，图像处理系统和显示屏幕控制方法
公开(公告)号：US20110214167A1
公开(公告)日：2011-09-01
申请号：US13033743
申请日：2011-02-24
申请人： Tetsuya OKA
发明人： Tetsuya OKA
IPC分类号： G06F21/20 , G06F21/00
CPC分类号： G06F21/608
摘要： An image processing apparatus comprises: a display part on which various information is displayed; an authentication information inputting part for receiving entry of authentication information made by a user; a setting information inputting part for receiving an operation to set made by the user, and inputting setting information; an authentication processing part for starting authentication processing to execute user authentication based on the authentication information in response to the entry of the authentication information; and a display controlling part for displaying an initial operation screen operable for the user to make setting on the display part in parallel with the authentication processing executed by the authentication processing part, and for reflecting the setting information received by the setting information inputting part before obtaining a result of the authentication processing to the initial operation screen. So, a waiting time of the user after the entry of the authentication information is reduced. Also, the user is allowed to start making operation relatively-early, and convenience of the image processing apparatus is enhanced.
摘要翻译：一种图像处理装置，包括：显示部，显示各种信息; 认证信息输入部，用于接收用户进行的认证信息的输入; 设置信息输入部分，用于接收由用户设置的操作并输入设置信息; 认证处理部件，用于响应于认证信息的输入，基于认证信息开始认证处理以执行用户认证; 以及显示控制部分，用于显示可操作的用户的初始操作屏幕，以便与由认证处理部分执行的认证处理并行地在显示部分上进行设置，并且用于在获得之前反映由设置信息输入部分接收的设置信息是对初始操作画面的认证处理的结果。因此，在进入认证信息之后，用户的等待时间减少。此外，允许用户相对早地开始操作，并且增强了图像处理装置的便利性。

5. 发明授权

US09390905B2 Method for manufacturing silicon substrate and silicon substrate 有权
标题翻译：硅衬底和硅衬底的制造方法
公开(公告)号：US09390905B2
公开(公告)日：2016-07-12
申请号：US13982584
申请日：2012-02-02
申请人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
发明人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
IPC分类号： H01L21/02 , H01L21/322 , C30B29/06 , C30B33/02
CPC分类号： H01L21/02027 , C30B29/06 , C30B33/02 , H01L21/3225 , Y10T428/24355
摘要： A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a manner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y≦0.15X-4.5 when X
摘要翻译：一种硅基板的制造方法，其特征在于，包括：通过将所述硅基板保持在高于1300℃且不大于1300℃的温度，通过快速加热和快速冷却装置对硅基板进行快速热处理硅熔点为1〜60秒，硅基板由通过切克劳斯基法生长的硅单晶锭切片; 以5〜150℃/秒的降温速度进行600〜800℃的温度的第1降温处理。进行第二降温处理，使X秒的冷却时间和Y℃/秒的温度降低率满足Y＆lt; ll;当X <100并满足Y＆NlE时为0.15X-4.5;X≥100时为10 。

6. 发明申请

US20130093060A1 METHOD FOR PRODUCING SILICON WAFER AND SILICON WAFER 审中-公开
标题翻译：生产硅波和硅波的方法
公开(公告)号：US20130093060A1
公开(公告)日：2013-04-18
申请号：US13704905
申请日：2011-06-07
申请人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
发明人： Tetsuya Oka , Koji Ebara , Shuji Takahashi
IPC分类号： H01L21/26 , H01L29/06
CPC分类号： H01L21/26 , C30B15/00 , C30B29/06 , C30B33/02 , H01L21/3225 , H01L29/0684
摘要： A silicon wafer and method for producing a silicon wafer, including at least: a first heat treatment process in which rapid heat treatment is performed on the wafer by using a rapid heating/cooling apparatus in an atmosphere containing at least one of nitride film formation atmospheric gas, rare gas, and oxidizing gas at a temperature higher than 1300° C. and lower than or equal to a silicon melting point for 1 to 60 seconds; and a second heat treatment process in which temperature and atmosphere are controlled to suppress generation of a defect caused by a vacancy in the wafer and rapid heat treatment is performed on the wafer. Therefore, RIE defects such as oxide precipitates, COPs, and OSFs are not present at a depth of at least 1 μm from the surface, which becomes a device fabrication region, and the lifetime is 500 μsec or longer.
摘要翻译：一种硅晶片和硅晶片的制造方法，其至少包括：第一热处理工序，其中在包含氮化膜形成大气中的至少一种的气氛中使用快速加热/冷却装置在晶片上进行快速热处理气体，稀有气体和氧化气体，温度高于1300℃，低于或等于硅熔点1〜60秒; 以及第二热处理工艺，其中控制温度和气氛以抑制由晶片空位引起的缺陷的产生，并且对晶片进行快速热处理。因此，RIE缺陷如氧化物沉淀物，COP和OSF在距离表面至少1um的深度处不存在，其成为器件制造区域，并且寿命为500μs或更长。

7. 发明申请

US20100067036A1 BILLING MANAGEMENT SYSTEM, IMAGE PROCESSING APPARATUS, BILLING CONTROL METHOD AND RECORDING MEDIUM 有权
标题翻译：账单管理系统，图像处理设备，账单控制方法和记录介质
公开(公告)号：US20100067036A1
公开(公告)日：2010-03-18
申请号：US12353079
申请日：2009-01-13
申请人： Tetsuya OKA
发明人： Tetsuya OKA
IPC分类号： G06K15/02 , G06Q10/00 , G06Q30/00 , G06Q50/00
CPC分类号： G06Q10/00 , G06Q30/0283 , G06Q30/04
摘要： Before executing a job, a printer performs an estimation of a billing amount with use of a simplified billing table, and if the estimated billing amount exceeds a balance, execution of the job is cancelled, and if within the balance, the job is executed. After the job is finished, the printer judges whether the estimated billing amount is correct according to detailed job information and a detailed billing table. If an error exists, the printer corrects the error and performs the correct billing.
摘要翻译：在执行作业之前，打印机使用简化的计费表来执行计费金额的估计，并且如果估计的计费金额超过余额，则该作业的执行被取消，并且如果在该余额内执行该作业。作业完成后，打印机根据详细的作业信息和详细的计费表来判断估计的计费金额是否正确。如果存在错误，打印机将更正错误并执行正确的计费。

8. 发明授权

US09830560B2 Billing management system, image processing apparatus, billing control method and recording medium 有权
公开(公告)号：US09830560B2
公开(公告)日：2017-11-28
申请号：US12353079
申请日：2009-01-13
申请人： Tetsuya Oka
发明人： Tetsuya Oka
IPC分类号： G06Q10/00 , G06Q30/02 , G06Q30/04
CPC分类号： G06Q10/00 , G06Q30/0283 , G06Q30/04
摘要： Before executing a job, a printer performs an estimation of a billing amount with use of a simplified billing table, and if the estimated billing amount exceeds a balance, execution of the job is cancelled, and if within the balance, the job is executed. After the job is finished, the printer judges whether the estimated billing amount is correct according to detailed job information and a detailed billing table. If an error exists, the printer corrects the error and performs the correct billing.

9. 发明申请

US20110001219A1 SILICON SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SILICON SINGLE CRYSTAL OR METHOD FOR PRODUCING SILICON SINGLE CRYSTAL WAFER, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：硅单晶，用于生产硅单晶的方法或用于生产硅单晶的方法和半导体器件
公开(公告)号：US20110001219A1
公开(公告)日：2011-01-06
申请号：US12918896
申请日：2009-02-19
申请人： Koji Ebara , Shizuo Igawa , Tetsuya Oka
发明人： Koji Ebara , Shizuo Igawa , Tetsuya Oka
IPC分类号： H01L29/04 , H01L21/20 , C30B15/20
CPC分类号： C30B15/00 , C30B29/06 , C30B33/005
摘要： The present invention is a silicon single crystal wafer grown by the Czochralski method, the silicon single crystal wafer in which an wafer entire plane is an N region located outside OSFs which are generated in the form of a ring when thermal oxidation treatment is performed and contains no defect region detected by the RIE process. As a result, a silicon single crystal wafer which belongs to none of a vacancy-rich V region, an OSF region, a Dn region in an Nv region, the Dn region in which a defect detected by the Cu deposition process is generated, and an interstitial silicon-rich I region and can improve the TDDB characteristic which is the time dependent breakdown characteristic of an oxide film more reliably than a known silicon single crystal wafer is provided, and the silicon single crystal wafer is provided under stable production conditions.
摘要翻译：本发明是通过切克劳斯基法生长的硅单晶晶片，其中晶片整面是位于OSF外部的N区域的硅单晶晶片，其在进行热氧化处理时以环形式生成并且包含没有RIE过程检测到缺陷区域。结果，不产生空穴浓度V区域，OSF区域，Nv区域中的Dn区域，产生由Cu沉积工艺检测到的缺陷的Dn区域的硅单晶晶片，以及间隙富硅I区域，并且可以提供比已知的硅单晶晶片更可靠地提高氧化膜的时间依赖性击穿特性的TDDB特性，并且在稳定的生产条件下提供硅单晶晶片。

10. 发明授权

US5292506A Muramyldipeptide derivatives and influenza vaccine comprising the derivatives 失效
标题翻译：包含衍生物的胞间二肽衍生物和流感疫苗
公开(公告)号：US5292506A
公开(公告)日：1994-03-08
申请号：US783148
申请日：1991-10-28
申请人： Masaharu Oki , Hideya Tsuge , Kunio Ohkuma , Tetsuya Oka
发明人： Masaharu Oki , Hideya Tsuge , Kunio Ohkuma , Tetsuya Oka
IPC分类号： A61K38/00 , A61K38/14 , A61K39/00 , A61K39/145 , C07K9/00 , A61K39/12 , A61K37/00 , A61K37/10
CPC分类号： A61K39/145 , A61K39/12 , A61K39/39 , C07K9/005 , A61K2039/5555 , A61K38/00 , A61K39/00 , C12N2760/16134 , Y10S424/812
摘要： Novel muramyldipeptide derivatives such as [6-0-(2-tetradecylhexadecanoyl)-N-acetylmuramoyl]-L-alanyl-D-glutamamide and [6-0-(2-tetradecylhexadecanoyl)-N-acetylmuramoyl]-L-alanyl-N -methyl-D-glutamamide are provided. The muramyldipeptide derivatives are excellent compound as an adjuvant or a constituting component of virosome vaccine. An influenza vaccine comprises a complex of the muramyldipeptide derivative and an influenza virus antigen. The influenza vaccine has excellent antibody-producing capacity and safety.
摘要翻译：新的胞壁酰二肽衍生物如（6-0-（2-十四烷基十六烷酰基）-N-乙酰基氨基甲酰基）-L-丙氨酰-D-谷氨酰胺和（6-0-（2-十四烷基十六烷酰基）-N-乙酰基甲酰基）-L-丙氨酰-N 甲基-D-谷氨酰胺。胞壁酰二肽衍生物是作为病毒颗粒疫苗的佐剂或构成成分的优异化合物。流感疫苗包含胞壁酰二肽衍生物和流感病毒抗原的复合物。流感疫苗具有优异的抗体生产能力和安全性。

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