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1. 发明申请

US20130003769A1 GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：基于氮化镓的半导体激光器件，以及用于制造基于氮化镓的半导体激光器件的方法
公开(公告)号：US20130003769A1
公开(公告)日：2013-01-03
申请号：US13431043
申请日：2012-03-27
申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/34 , H01L21/18
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.
摘要翻译：具有降低的阈值电流的氮化镓基半导体激光器件。氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚第23层。

2. 发明授权

US08477818B2 Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device 有权
标题翻译：氮化镓系半导体激光器件及其制造方法
公开(公告)号：US08477818B2
公开(公告)日：2013-07-02
申请号：US13431043
申请日：2012-03-27
申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.
摘要翻译：具有降低的阈值电流的氮化镓基半导体激光器件。氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚层。

3. 发明授权

US08718110B2 Nitride semiconductor laser and epitaxial substrate 有权
标题翻译：氮化物半导体激光器和外延衬底
公开(公告)号：US08718110B2
公开(公告)日：2014-05-06
申请号：US13366636
申请日：2012-02-06
申请人： Takashi Kyono , Yohei Enya , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Takashi Kyono , Yohei Enya , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/00
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要翻译：氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。第一p型半导体层包括包括内置各向异性应变的InAlGaN层。第二p型半导体层包括与InAlGaN层的材料不同的半导体。第一氮化物半导体层设置在第二p型半导体层和有源层之间。第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

4. 发明授权

US08953656B2 III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件及其制造方法
公开(公告)号：US08953656B2
公开(公告)日：2015-02-10
申请号：US13354053
申请日：2012-01-19
申请人： Takashi Kyono , Shimpei Takagi , Takamichi Sumitomo , Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Katsunori Yanashima
发明人： Takashi Kyono , Shimpei Takagi , Takamichi Sumitomo , Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Katsunori Yanashima
IPC分类号： H01S5/00 , H01S5/343 , H01S5/32 , H01S5/02 , H01S5/10 , H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/2009 , H01S5/3202
摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着波导轴在激光装置中。氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。激光器结构包括与波导轴相交的第一和第二断裂面。激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

5. 发明授权

US09231370B2 Group III nitride semiconductor light emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US09231370B2
公开(公告)日：2016-01-05
申请号：US13453743
申请日：2012-04-23
申请人： Takamichi Sumitomo , Takashi Kyono , Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Masahiro Adachi , Shimpei Takagi , Katsunori Yanashima
发明人： Takamichi Sumitomo , Takashi Kyono , Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Masahiro Adachi , Shimpei Takagi , Katsunori Yanashima
IPC分类号： H01S5/042 , H01S5/32 , H01S5/343 , B82Y20/00 , H01S5/02 , H01S5/028 , H01S5/22
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/22 , H01S5/3202 , H01S5/34333
摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。欧姆电极通过绝缘层的开口与第三区域接触。第一部分具有延伸到第一端面边缘的第一臂。第三部分远离第一端面边缘。

6. 发明授权

US08927962B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US08927962B2
公开(公告)日：2015-01-06
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/16 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

7. 发明申请

US20120299010A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20120299010A1
公开(公告)日：2012-11-29
申请号：US13484776
申请日：2012-05-31
申请人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

8. 发明授权

US08174035B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08174035B2
公开(公告)日：2012-05-08
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
发明人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

9. 发明授权

US07955881B2 Method of fabricating quantum well structure 有权
标题翻译：量子阱结构的制作方法
公开(公告)号：US07955881B2
公开(公告)日：2011-06-07
申请号：US12500074
申请日：2009-07-09
申请人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
发明人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.
摘要翻译：在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。阱层包含含有铟作为成分的III族氮化物半导体。在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。阻挡层在高于第一温度的第二温度下在中间层上生长。包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

10. 发明授权

US08917750B2 III-nitride semiconductor laser diode 有权
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US08917750B2
公开(公告)日：2014-12-23
申请号：US13328622
申请日：2011-12-16
申请人： Masahiro Adachi , Shinji Tokuyama , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura
发明人： Masahiro Adachi , Shinji Tokuyama , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura
IPC分类号： H01S5/00 , H01S5/343 , H01S5/32 , H01S5/20 , B82Y20/00 , H01S5/30 , H01S5/22
CPC分类号： H01S5/2004 , B82Y20/00 , H01S5/22 , H01S5/309 , H01S5/3202 , H01S5/34333 , H01S2301/18 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.
摘要翻译：提供能够以低阈值激光的III族氮化物半导体激光二极管。支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。在支撑基体的主表面上方设置有n型包层区域和p型包层区域。芯型半导体区域设置在n型包层区域和p型包层区域之间。芯半导体区域包括第一光导层，有源层和第二光导层。有源层设置在第一光导层和第二光导层之间。芯半导体区域的厚度不小于0.5μm。这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

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