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1. 发明授权

US08927962B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US08927962B2
公开(公告)日：2015-01-06
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/16 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

2. 发明申请

US20120299010A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20120299010A1
公开(公告)日：2012-11-29
申请号：US13484776
申请日：2012-05-31
申请人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

3. 发明授权

US07955881B2 Method of fabricating quantum well structure 有权
标题翻译：量子阱结构的制作方法
公开(公告)号：US07955881B2
公开(公告)日：2011-06-07
申请号：US12500074
申请日：2009-07-09
申请人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
发明人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.
摘要翻译：在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。阱层包含含有铟作为成分的III族氮化物半导体。在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。阻挡层在高于第一温度的第二温度下在中间层上生长。包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

4. 发明授权

US08693515B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08693515B2
公开(公告)日：2014-04-08
申请号：US13050330
申请日：2011-03-17
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/223
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

5. 发明授权

US08653621B2 Nitride-based semiconductor light-emitting element 有权
公开(公告)号：US08653621B2
公开(公告)日：2014-02-18
申请号：US13054037
申请日：2010-06-18
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L31/102
摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.

6. 发明授权

US08306082B2 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08306082B2
公开(公告)日：2012-11-06
申请号：US12846361
申请日：2010-07-29
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.
摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。半导体区域包括第一导电型氮化镓基半导体的第一包覆层，第二导电型氮化镓基半导体的第二包覆层和有源层。第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。有源层包括氮化镓基半导体层。支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

7. 发明授权

US08284811B2 Gallium nitride-based semiconductor laser diode 有权
标题翻译：氮化镓基半导体激光二极管
公开(公告)号：US08284811B2
公开(公告)日：2012-10-09
申请号：US12837143
申请日：2010-07-15
申请人： Takamichi Sumitomo , Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono
发明人： Takamichi Sumitomo , Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3202 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer 29 is provided so as to generate light at the wavelength of not less than 500 nm, the wavelength of light to be confined into a core semiconductor region 19 is a long wavelength. A first optical guide layer 27 is provided with a two-layer structure, and a second optical guide layer 31 is provided with a two-layer structure. A material of a cladding layer 21 comprised of at least either of AlGaN and InAlGaN is different from the III-nitride semiconductor, and the thickness D15 of a first epitaxial semiconductor region 15 is larger than the thickness D19 of the core semiconductor region 19; however, the misfit dislocation densities at first to third interfaces J1, J2 and J3 are not more than 1×106 cm−1, thereby preventing lattice relaxation from occurring in the semiconductor layers at these interfaces J1, J2 and J3 because of the c-plane that acts as a slip plane.
摘要翻译：提供了能够利用半极性平面发光的不少于500nm的光的III族氮化物半导体激光二极管。由于设置有源层29以产生波长不小于500nm的光，所以被限制在芯半导体区域19中的光的波长是长波长。第一光导层27设置有两层结构，第二光导层31设置有两层结构。由AlGaN和InAlGaN中的至少一个组成的包覆层21的材料与III族氮化物半导体不同，第一外延半导体区域15的厚度D15大于芯半导体区域19的厚度D19; 然而，第一至第三界面J1，J2和J3处的失配位错密度不大于1×106cm-1，从而防止在这些界面J1，J2和J3处的半导体层中发生晶格弛豫，因为c- 作为滑行平面的飞机。

8. 发明授权

US08207544B2 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件，外延衬底以及III族氮化物半导体器件的制造方法
公开(公告)号：US08207544B2
公开(公告)日：2012-06-26
申请号：US12836144
申请日：2010-07-14
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸，氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括多个GaN基半导体层。基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

9. 发明申请

US20110227035A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110227035A1
公开(公告)日：2011-09-22
申请号：US12999987
申请日：2010-06-14
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/12
摘要： Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate (5) formed from a hexagonal-crystal gallium nitride semiconductor; an n-type gallium nitride semiconductor region (7) disposed on a main surface (S1) of the substrate (5); a light-emitting layer (11) having a single quantum well structure disposed on the n-type gallium nitride semiconductor region (7); and a p-type gallium nitride semiconductor region (19) disposed on the light-emitting layer (11). The light-emitting layer (11) is disposed between the n-type gallium nitride semiconductor region (7) and the p-type gallium nitride semiconductor region (19). The light-emitting layer (11) comprises a well layer (15), a barrier layer (13), and a barrier layer (17). The well layer (15) is InGaN. The main surface (S1) extends, from a surface perpendicular to the c axial direction of the hexagonal-crystal gallium nitride semiconductor, along a reference plane (S5) inclined at an angle of inclination within a range between 63° and 80° or between 100° and 117°.
摘要翻译：提供了一种具有提高到阱层的载流子注入效率的氮化物基半导体发光元件。元件包括由六方晶系氮化镓半导体形成的基板（5）设置在所述基板（5）的主表面（S1）上的n型氮化镓半导体区域（7）。具有设置在n型氮化镓半导体区域（7）上的单量子阱结构的发光层（11）; 和设置在发光层（11）上的p型氮化镓半导体区域（19）。发光层（11）设置在n型氮化镓半导体区域（7）和p型氮化镓半导体区域（19）之间。发光层（11）包括阱层（15），阻挡层（13）和阻挡层（17）。阱层（15）是InGaN。主表面（S1）从垂直于六方晶系氮化镓半导体的c轴方向的表面沿着在63°至80°之间的范围内倾斜的参考平面（S5）延伸，或者在 100°和117°。

10. 发明申请

US20110124142A1 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开
标题翻译： GAN半导体光学元件，制造GAN半导体光学元件的方法，外延晶体和用于生长GAN半导体膜的方法
公开(公告)号：US20110124142A1
公开(公告)日：2011-05-26
申请号：US13019067
申请日：2011-02-01
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.
摘要翻译：在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。在GaN基半导体外延区域15上，设置有源层17。有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。

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