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1. 发明授权

US5227901A Liquid crystal display device 失效
公开(公告)号：US5227901A
公开(公告)日：1993-07-13
申请号：US854095
申请日：1992-03-19
申请人： Tetsuya Iizuka , Shinichi Kamagami , Yasuhisa Oana
发明人： Tetsuya Iizuka , Shinichi Kamagami , Yasuhisa Oana
IPC分类号： G02F1/1362 , G02F1/1365
CPC分类号： G02F1/1365 , G02F1/136204
摘要： A liquid crystal display device includes first and second substrate and a liquid crystal layer sealed between the substrates. A plurality of pixel elements are formed in a matrix pattern on the first substrate, and a plurality of driving nonlinear resistance elements are formed on the first substrate and electrically connected to the pixel electrodes, respectively. A plurality of parallel wiring electrodes are formed on the first substrate, respectively extending in parallel to the columns of the pixel electrodes, and electrically connected to the respective nonlinear resistance elements on the respective columns of the pixel electrodes. Each wiring electrode is divided at a dividing portion and has a pair of divided ends. Protecting nonlinear resistance elements are respectively formed on the divided ends of each wiring electrode so as to reduce potential difference between the divided ends when static electricity is generated at the dividing portions.

2. 发明申请

US20050121111A1 Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization 失效
标题翻译：具有通过高热氧化形成的栅极绝缘体的薄膜半导体器件
公开(公告)号：US20050121111A1
公开(公告)日：2005-06-09
申请号：US11031144
申请日：2005-01-06
申请人： Yasuhisa Oana , Masakiyo Matsumura
发明人： Yasuhisa Oana , Masakiyo Matsumura
IPC分类号： H01L21/20 , H01L21/321 , H01L21/336 , H01L29/49 , H01L29/786 , H01L29/12 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02667 , H01L21/02488 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32105 , H01L27/1274 , H01L29/4908 , H01L29/66757 , H01L29/66772 , H01L29/78603 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor device includes a gate electrode insulator formed through high-heat oxidization of a semiconductor film. The high-heat oxidization of semiconductor film is carried out, in the process of crystallization or recrystallization of non-single-crystalline semiconductor thin film on a base layer, by irradiating predetermined areas of the thin film which is implanted with oxygen ion before irradiation, to convert such areas to oxidized areas, and these areas are processed to gate electrode insulators of electric circuit units in the thin film semiconductor device.
摘要翻译：薄膜半导体器件包括通过半导体膜的高热氧化形成的栅电极绝缘体。在基底层上的非单晶半导体薄膜的结晶化或再结晶过程中，通过在照射前照射注入氧离子的薄膜的预定区域进行半导体膜的高热氧化，将这些区域转换为氧化区域，并将这些区域加工成薄膜半导体器件中的电路单元的栅电极绝缘体。

3. 发明授权

US4447825A III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer 失效
标题翻译：具有掺杂钽阻挡层的III-V族化合物半导体发光元件
公开(公告)号：US4447825A
公开(公告)日：1984-05-08
申请号：US230679
申请日：1981-02-02
申请人： Yasuhisa Oana , Nobuaki Yasuda , Masato Yamashita , Norio Ozawa
发明人： Yasuhisa Oana , Nobuaki Yasuda , Masato Yamashita , Norio Ozawa
IPC分类号： H01L33/00 , H01L33/22 , H01L33/30 , H01L33/40 , H01L23/48 , H01L23/28 , H01L29/46 , H01L29/62
CPC分类号： H01L33/40 , H01L24/05 , H01L33/0008 , H01L33/0062 , H01L33/22 , H01L2224/04042 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/12041 , H01L2924/181 , H01L33/30
摘要： Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition.
摘要翻译：公开了具有包含p-n结的III-V族化合物半导体本体和包含形成p-n结的p型层的III-V族化合物半导体发光元件; 以及安装在半导体本体的p型层上的多层电极。该电极包括含有少量铍或锌并与半导体本体的p型层直接接触形成的第一金合金层和由金或铝形成的最上层。通过真空气相沉积在第一层和最上层之间形成掺杂有碳，氮和/或氧的钽层。

4. 发明授权

US06828178B2 Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it 失效
标题翻译：具有半导体晶体排列构造的薄膜半导体器件及其制造方法
公开(公告)号：US06828178B2
公开(公告)日：2004-12-07
申请号：US10192850
申请日：2002-07-11
申请人： Masakiyo Matsumura , Yasuhisa Oana , Hiroyuki Abe , Yoshitaka Yamamoto , Hideo Koseki , Mitsunori Warabisako
发明人： Masakiyo Matsumura , Yasuhisa Oana , Hiroyuki Abe , Yoshitaka Yamamoto , Hideo Koseki , Mitsunori Warabisako
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/67373 , H01L21/67379 , H01L21/67772 , H01L21/67775 , H01L27/1218 , H01L27/1274 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with one unit of electric circuit having a gate electrode, a source electrode and drain electrode. Such regulated arrangement of large size single-crystalline grains in the semiconductor layer is realized by a process including a step of irradiating the layer of amorphous or polycrystalline semiconductor with energy beam such as excimer laser so that maximum irradiation intensity points and minimum irradiation intensity points are arranged regulatedly. The device can have a high mobility such as about 500 cm2/V sec.
摘要翻译：对薄膜半导体器件及其制造方法进行说明。在器件的半导体薄膜层中，以规定的形式形成多个大尺寸的半导体单晶晶粒，并且每个单晶粒都配备有一个单元的电路，该电路具有栅电极，源极电极和漏电极。半导体层中大尺寸单晶晶粒的这种调节布置通过包括以下步骤的方法来实现：使用能量束如准分子激光器照射非晶或多晶半导体层，使得最大照射强度点和最小照射强度点为按规定排列。该装置可以具有高迁移率，例如约500cm 2 / V sec。

5. 发明授权

US6008869A Display device substrate and method of manufacturing the same 失效
标题翻译：显示装置基板及其制造方法
公开(公告)号：US6008869A
公开(公告)日：1999-12-28
申请号：US571374
申请日：1995-12-13
申请人： Yasuhisa Oana , Nobuki Ibaraki , Masayuki Dohjo , Yoshitaka Kamata
发明人： Yasuhisa Oana , Nobuki Ibaraki , Masayuki Dohjo , Yoshitaka Kamata
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1362 , G02F1/1368 , G02F1/1333
CPC分类号： G02F1/136286
摘要： The present invention provides a display device substrate includes a first wiring layer formed on a substrate made of an insulating material, a second wiring layer formed to cross the first wiring layer, and an insulating film interposed between the first and second wiring layers at a cross point portion therebetween, wherein the first wiring layer is constituted by an electrode wiring layer made of a material containing aluminum as a main component and a surface covering layer formed by causing a refractory metal to denature the electrode wiring layer. The present invention also provides a method of manufacturing a display device substrate in which an electrode wiring layer made of a material containing aluminum as a main component is formed on a substrate made of an insulating material, a thin film made of a refractory metal is formed on the electrode wiring layer, and heat treatment is performed to cause the refractory metal to denature a surface portion of the electrode wiring layer, thereby forming a surface covering layer.
摘要翻译：本发明提供一种显示装置用基板，其具备：由绝缘材料构成的基板上形成的第一布线层，与该第一布线层交叉形成的第二布线层，以及交叉设置在该第一布线层和第二布线层之间的绝缘膜其中第一布线层由以铝为主要成分的材料制成的电极布线层和通过使难熔金属使电极布线层变性而形成的表面覆盖层构成。本发明还提供一种制造显示装置基板的方法，其中在由绝缘材料制成的基板上形成由以铝为主要成分的材料制成的电极布线层，形成由难熔金属制成的薄膜在电极配线层上进行热处理，使难熔金属使电极配线层的表面部变性，从而形成表面被覆层。

6. 发明授权

US5083853A Color liquid crystal display device having light-shielding conductive layers 失效
标题翻译：彩色液晶显示装置，具有遮光导电层
公开(公告)号：US5083853A
公开(公告)日：1992-01-28
申请号：US246835
申请日：1988-09-20
申请人： Toshihiro Ueki , Yasuhisa Oana , Hitoshi Tomii
发明人： Toshihiro Ueki , Yasuhisa Oana , Hitoshi Tomii
IPC分类号： G09F9/35 , G02B5/20 , G02F1/1335
CPC分类号： G02F1/133512 , G02F1/133514
摘要： Disclosed is a color liquid crystal display device having a plurality of pixels, in which conductive films are arranged at regions corresponding to the respective pixels, a light-shielding conductive layer is connected to the conductive films and extends in a region between the pixels, and color filters are formed on the conductive films. In the method of manufacturing such color liquid crystal display device, a light-shielding conductive layer is formed on a substrate, part of the light-shielding layer corresponding to a pixel for which a filter is to be formed is removed from the substrate on which the light-shielding layer is formed and simultaneously the light-shielding layer is partially removed so that portions thereof corresponding to at least pixels having different colors are electrically insulated from each other, a conductive film is formed at a portion corresponding to the pixel for which the filter is to be formed, and films having colors corresponding to those of the respective pixels are formed on the surface of the conductive film.
摘要翻译：公开了一种具有多个像素的彩色液晶显示装置，其中导电膜布置在与各个像素对应的区域处，遮光导电层连接到导电膜并在像素之间的区域中延伸，并且在导电膜上形成滤色器。在制造这种彩色液晶显示装置的方法中，在基板上形成遮光导电层，从与要形成滤光器的像素对应的一部分遮光层从基板上去除形成遮光层，同时遮光层被部分去除，使得至少与具有不同颜色的像素对应的部分彼此电绝缘，在对应于像素的部分形成导电膜要形成滤光片，并且在导电膜的表面上形成具有与各像素对应的颜色的膜。

7. 发明申请

US20060262239A1 Thin film transistor and liquid crystal display device using the same 有权
标题翻译：薄膜晶体管和使用其的液晶显示装置
公开(公告)号：US20060262239A1
公开(公告)日：2006-11-23
申请号：US11413107
申请日：2006-04-28
申请人： Yasuhisa Oana
发明人： Yasuhisa Oana
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/1368 , H01L29/41733 , H01L29/78606 , H01L29/78696
摘要： A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode formed on a substrate; and source and drain electrodes obtained by sequentially forming a gate insulating film, an intrinsic amorphous silicon layer, and an n+ amorphous silicon layer on the gate electrode, wherein the source and drain electrodes have circular shapes. One of the source and drain electrodes is disposed at the center, and the other one of the source and drain electrodes having a concentric circular shape surrounds the former. A channel region may be formed between the source and drain electrodes; and an area of an effective stray capacitance may be less than 150 μm2. A ratio of a width of a channel to a length of the channel may be more than 4.5 and a filling capacity index to the effective stray capacitance may be less than 50.
摘要翻译：形成有同心圆形的源电极和漏电极的TFT减少了由漏电流引起的截止电流，并且优化了栅极和源极之间的导通电流和杂散电容。 TFT包括形成在基板上的栅电极; 以及通过在栅电极上依次形成栅极绝缘膜，本征非晶硅层和n +非晶硅层而获得的源极和漏极，其中源极和漏极具有圆形形状。源极和漏极中的一个设置在中心，并且源电极和漏电极中的另一个具有同心圆形形状围绕前者。可以在源极和漏极之间形成沟道区; 并且有效杂散电容的面积可以小于150μm2。通道的宽度与通道的长度的比率可以大于4.5，并且有效杂散电容的填充容量指数可以小于50。

8. 发明授权

US4963240A Sputtering alloy target and method of producing an alloy film 失效
标题翻译：溅射合金靶和合金膜的制造方法
公开(公告)号：US4963240A
公开(公告)日：1990-10-16
申请号：US174959
申请日：1988-03-29
申请人： Yoshiharu Fukasawa , Mituo Kawai , Hideo Ishihara , Takenori Umeki , Yasuhisa Oana
发明人： Yoshiharu Fukasawa , Mituo Kawai , Hideo Ishihara , Takenori Umeki , Yasuhisa Oana
IPC分类号： C23C14/14 , C22C27/02 , C23C14/34
CPC分类号： C23C14/3414 , C22C27/02
摘要： The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.

9. 发明授权

US4905066A Thin-film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US4905066A
公开(公告)日：1990-02-27
申请号：US340546
申请日：1989-04-19
申请人： Masayuki Dohjo , Yasuhisa Oana , Mitsushi Ikeda
发明人： Masayuki Dohjo , Yasuhisa Oana , Mitsushi Ikeda
IPC分类号： H01L27/12 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786
CPC分类号： H01L29/513 , H01L21/31687 , H01L29/4908 , H01L29/517 , H01L29/518 , H01L29/66765 , H01L29/78666
摘要： A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.

10. 发明授权

US4534622A Solid-state device having a plurality of optical functions 失效
标题翻译：具有多个光学功能的固态器件
公开(公告)号：US4534622A
公开(公告)日：1985-08-13
申请号：US567558
申请日：1984-01-03
申请人： Nozomu Harada , Yasuhisa Oana , Keisuke Ogi , Koji Izawa , Akira Taya , Masanori Sakamoto
发明人： Nozomu Harada , Yasuhisa Oana , Keisuke Ogi , Koji Izawa , Akira Taya , Masanori Sakamoto
IPC分类号： G02F1/135 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L27/12 , H01L27/146 , H01L29/78 , H01L29/786 , H04N1/028 , H04N5/335 , H04N5/369 , H04N5/374 , G02F1/13
CPC分类号： G02F1/1368 , G02F1/1354 , H04N1/028 , G02F1/136213
摘要： A solid-state optical device with a plurality of cells having a plurality of optical functions is disclosed. Each of the cells comprises a transparent substrate, an anti-reflection film formed on the lower surface of the transparent substrate, a MOS transistor and a capacitor formed on the upper surface of the transparent substrate, a liquid crystal display device formed on the MOS transistor and capacitor, and window for leading a light signal incident on the liquid crystal display device from above to the transparent substrate. At least either a channel region of the MOS transistor and a region intervening between pair electrodes of the capacitor is formed of a photoconductive film. A transparent medium intervenes between the transparent substrate and photoconductive film such that light signal led through the window to the transparent substrate is reflected by an object disposed in contact with anti-reflection film to reach the photoconductive film, thereby generating carriers therein.
摘要翻译：公开了一种具有多个具有多个光学功能的单元的固态光学器件。每个单元包括透明基板，形成在透明基板的下表面上的防反射膜，形成在透明基板的上表面上的MOS晶体管和电容器，形成在MOS晶体管上的液晶显示装置和电容器，以及用于将从液晶显示装置入射的光信号从上方引导到透明基板的窗口。 MOS晶体管的沟道区域和介于电容器的对电极之间的区域中的至少任一个由光电导膜形成。透明介质介于透明基板和光电导膜之间，使得通过窗口到达透明基板的光信号被设置成与抗反射膜接触的物体反射，以到达光电导膜，从而在其中产生载流子。

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