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1. 发明授权

US5981146A Resist coating film 失效
标题翻译：抗蚀涂层
公开(公告)号：US5981146A
公开(公告)日：1999-11-09
申请号：US789560
申请日：1997-01-28
申请人： Teruhiko Kumada , Atsuko Sasahara , Youko Tanaka , Hideo Horibe , Shigeru Kubota , Hiroshi Koezuka , Tetsuro Hanawa
发明人： Teruhiko Kumada , Atsuko Sasahara , Youko Tanaka , Hideo Horibe , Shigeru Kubota , Hiroshi Koezuka , Tetsuro Hanawa
IPC分类号： G03F7/38 , G03F7/004 , G03F7/09 , G03F7/095 , H01L21/027 , G03C1/73
CPC分类号： H01L21/0274 , G03F7/0045 , G03F7/092 , G03F7/095 , Y10S430/122
摘要： When a fine pattern is formed by using a chemical-amplification-type resist film, fall of acid in the surface of the resist can be inhibited so that a fine pattern exhibiting an excellent shape is formed. A resist coating film containing a compound having a sulfonic acid group or a carbonic acid group is formed on a chemical-amplification-type resist film of a semiconductor substrate, followed by performing exposure.
摘要翻译：当通过使用化学放大型抗蚀剂膜形成精细图案时，可以抑制抗蚀剂表面中的酸的下降，从而形成表现出优异形状的精细图案。在半导体衬底的化学放大型抗蚀剂膜上形成含有具有磺酸基或碳酸基的化合物的抗蚀剂涂膜，然后进行曝光。

2. 发明申请

US20070128559A1 MATERIAL FOR FORMING FINE PATTERN, METHOD OF FORMING FINE PATTERN, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE MANUFACTURED FROM THE SAME 审中-公开
标题翻译：形成精细图案的材料，形成微细图案的方法，使用该方法制造电子器件的方法以及从其制造的电子器件
公开(公告)号：US20070128559A1
公开(公告)日：2007-06-07
申请号：US11561168
申请日：2006-11-17
申请人： Takeo ISHIBASHI , Tetsuro Hanawa , Mamoru Terai , Teruhiko Kumada
发明人： Takeo ISHIBASHI , Tetsuro Hanawa , Mamoru Terai , Teruhiko Kumada
IPC分类号： G03F7/00
CPC分类号： G03F7/40
摘要： A raw material of a cover layer as a material for forming a fine pattern is applied as to cover a resist pattern. Then, a component in the cover layer permeates into the resist pattern. Thereby, a mixed layer having a lower softening point than that of the resist pattern is formed. Then, a heat treatment is performed at a temperature lower than the softening point of the resist pattern and higher than that of the mixed layer. Thereby, the mixed layer is softened and a width of the mixed layer becomes large. As a result, a space of the resist pattern is narrowed. Therefore, a fine pattern is formed having a smaller size than the size limit due to the exposure wavelength.
摘要翻译：涂覆作为形成精细图案的材料的覆盖层的原料以覆盖抗蚀剂图案。然后，覆盖层中的成分渗透到抗蚀剂图案中。由此，形成软化点低于抗蚀剂图案的混合层。然后，在低于抗蚀剂图案的软化点的温度下进行热处理，并且高于混合层的温度。由此，混合层软化，混合层的宽度变大。结果，抗蚀剂图案的空间变窄。因此，形成由于曝光波长而具有比尺寸限制小的尺寸的精细图案。

3. 发明申请

US20070224546A1 Method of forming resist pattern and method of maufacturing semiconductor device 失效
标题翻译：形成抗蚀剂图案的方法和制造半导体器件的方法
公开(公告)号：US20070224546A1
公开(公告)日：2007-09-27
申请号：US11700131
申请日：2007-01-31
申请人： Toshifumi Suganaga , Tetsuro Hanawa , Takeo Ishibashi
发明人： Toshifumi Suganaga , Tetsuro Hanawa , Takeo Ishibashi
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/40
摘要： The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low.
摘要翻译：本发明改进了由稀疏和密集掩模图案之间的差异产生的OPE特性，并提高了图案设计中的保真度。因此，本发明包括在基板上形成具有酸解离抑制基团的抗蚀剂的步骤，用溶解在醇系溶剂中的酸性聚合物涂布抗蚀剂并形成上层膜的工序，通过掩模曝光，进行烘烤处理的步骤和用碱性显影剂处理的步骤，并且其中在进行烘烤处理的步骤中，通过上层膜在抗蚀剂上形成混合层，并且在在图案密度低的区域中，掩模图案的图案密度高的区域的未曝光部分中形成较厚的混合层。

4. 发明授权

US5380889A Method of forming resist pattern and organic silane compound for forming anti-relflection film for use in such method 失效
标题翻译：形成抗蚀剂图案的方法和用于形成用于这种方法的防反射膜的有机硅烷化合物
公开(公告)号：US5380889A
公开(公告)日：1995-01-10
申请号：US814632
申请日：1991-12-30
申请人： Tetsuro Hanawa , Maria Op de Beeck
发明人： Tetsuro Hanawa , Maria Op de Beeck
IPC分类号： G03F7/11 , C07F7/18 , G03F7/039 , G03F7/09 , H01L21/027 , C07F7/10
CPC分类号： B82Y30/00 , C07F7/1868 , G03F7/039 , G03F7/091 , Y10S430/146
摘要： An organic silane compound for forming an antireflection film on the surface of a substrate prior to forming a resist pattern includes a silicon atom, a leaving group bound to the silicon atom and capable of reacting with a hydroxyl group existing in the surface of the semiconductor substrate to form a covalent bond between the semiconductor substrate and the organic silane compound, and a substituent group capable of absorbing far-ultra violet light. The substrate is coated with the organic silane compound. Resist is applied onto the substrate coated with the organic silane compound. The resist is exposed selectively using far-ultra violet light. The resist is exposed.
摘要翻译：在形成抗蚀剂图案之前，在基板表面上形成抗反射膜的有机硅烷化合物包括硅原子，与硅原子结合的能够与存在于半导体基板表面的羟基发生反应的硅原子在半导体衬底和有机硅烷化合物之间形成共价键，以及能够吸收远紫外光的取代基。衬底涂有有机硅烷化合物。将抗蚀剂施加到涂有有机硅烷化合物的基材上。使用远紫外光选择性地曝光抗蚀剂。抗蚀剂被暴露。

5. 发明授权

US06731375B2 Projection aligner, exposing method and semiconductor device 失效
标题翻译：投影对准器，曝光方法和半导体器件
公开(公告)号：US06731375B2
公开(公告)日：2004-05-04
申请号：US09986353
申请日：2001-11-08
申请人： Tetsuro Hanawa
发明人： Tetsuro Hanawa
IPC分类号： G03B2754
CPC分类号： G03F7/70041 , G03F7/70558 , Y10T428/24802
摘要： In the present invention, a substrate with exposure light from an exposure light source is irradiated before a projection exposure beforehand. A reflectance of this exposure light from the substrate is measured. An appropriate intensity of exposure light for the substrate is determined by referring to the reflectance. Then, a mask pattern is projected onto the substrate by irradiating with exposure light of the determined intensity.
摘要翻译：在本发明中，预先在投影曝光之前照射具有来自曝光光源的曝光光的基板。测量来自基板的曝光光的反射率。通过参照反射率确定适当的曝光用光强度。然后，通过用确定的强度的曝光光照射掩模图案到基板上。

6. 发明授权

US6057066A Method of producing photo mask 有权
标题翻译：光罩制作方法
公开(公告)号：US6057066A
公开(公告)日：2000-05-02
申请号：US154071
申请日：1998-09-16
申请人： Tetsuro Hanawa
发明人： Tetsuro Hanawa
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A method of producing a phase shift mask of attenuated type including a step of forming an optical proximity correction in a self-replicating manner in order to weaken side lobe lights by a first phase shift mask of attenuated type including a first pattern, according to which making of data for writing the optical proximity correction at the time of forming by an electron beam lithography system, various transfer tests and/or various optical simulations, and great amount of data for writing in the system are not necessary when the optical proximity correction which is different from in response to each pattern size and/or to each pattern arrangement.
摘要翻译：一种制造衰减型相移掩模的方法，包括以自复制方式形成光学邻近校正的步骤，以便通过包括第一图案的衰减类型的第一相移掩模来削弱旁瓣光，根据该方法在通过电子束光刻系统形成时写入光学邻近校正的数据的制作，各种转移测试和/或各种光学模拟以及用于在系统中写入的大量数据不是必需的，当光学邻近校正与响应于每个图案尺寸和/或每个图案布置不同。

7. 发明申请

US20100203456A1 METHOD OF FORMING RESIST PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成电阻图案的方法和制造半导体器件的方法
公开(公告)号：US20100203456A1
公开(公告)日：2010-08-12
申请号：US12767258
申请日：2010-04-26
申请人： Toshifumi Suganaga , Tetsuro Hanawa , Takeo Ishibashi
发明人： Toshifumi Suganaga , Tetsuro Hanawa , Takeo Ishibashi
IPC分类号： H01L21/027
CPC分类号： G03F7/11 , G03F7/40
摘要： The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low.
摘要翻译：本发明改进了由稀疏和密集掩模图案之间的差异产生的OPE特性，并提高了图案设计中的保真度。因此，本发明包括在基板上形成具有酸解离抑制基团的抗蚀剂的步骤，用溶解在醇系溶剂中的酸性聚合物涂布抗蚀剂并形成上层膜的工序，通过掩模曝光，进行烘烤处理的步骤和用碱性显影剂处理的步骤，并且其中在进行烘烤处理的步骤中，通过上层膜在抗蚀剂上形成混合层，并且在在图案密度低的区域中，掩模图案的图案密度高的区域的未曝光部分中形成较厚的混合层。

8. 发明授权

US5512422A Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method 失效
标题翻译：形成抗蚀剂图案的方法和用于形成用于这种方法的防反射膜的有机硅烷化合物
公开(公告)号：US5512422A
公开(公告)日：1996-04-30
申请号：US205480
申请日：1994-03-04
申请人： Tetsuro Hanawa , Maria O. de Beeck
发明人： Tetsuro Hanawa , Maria O. de Beeck
IPC分类号： G03F7/11 , C07F7/18 , G03F7/039 , G03F7/09 , H01L21/027 , G03C5/00
CPC分类号： B82Y30/00 , C07F7/1868 , G03F7/039 , G03F7/091 , Y10S430/146
摘要： Methods of forming a resist pattern allow the size of the resist pattern to be controlled in its formation, and the size of the underlying substrate to be controlled in etching the same even with a step portion existing on the substrate. The methods of forming a resist pattern on a substrate by lithography use far-ultra violet light. An organic silane compound for forming an anti reflection film on the surface of a substrate includes a silicon atom, a leaving group bound to the silicon atom and replaceable with an hydroxyl group existing in the surface of the semiconductor substrate to bind covalently the semiconductor substrate and the organic silane compound, and a substituent group absorbing the far-ultra violet light. The substrate is coated with the organic silane compound. Resist is applied onto the substrate coated with the organic silane compound. The resist is exposed selectively using far-ultra violet light, and then developed.
摘要翻译：形成抗蚀剂图案的方法允许在其形成中控制抗蚀剂图案的尺寸，并且即使在存在于基板上的台阶部分也可以在其蚀刻中控制下面的基板的尺寸。通过光刻法在基板上形成抗蚀剂图案的方法使用远紫外光。在衬底表面上形成抗反射膜的有机硅烷化合物包括硅原子，与硅原子键合的离去基团，并且可以与存在于半导体衬底的表面中的羟基取代，以共价键合半导体衬底和有机硅烷化合物和吸收远紫外光的取代基。衬底涂有有机硅烷化合物。将抗蚀剂施加到涂有有机硅烷化合物的基材上。使用远紫外光选择性地曝光抗蚀剂，然后显影。

9. 发明授权

US07727709B2 Method of forming resist pattern and method of manufacturing semiconductor device 失效
标题翻译：形成抗蚀剂图案的方法和制造半导体器件的方法
公开(公告)号：US07727709B2
公开(公告)日：2010-06-01
申请号：US11700131
申请日：2007-01-31
申请人： Toshifumi Suganaga , Tetsuro Hanawa , Takeo Ishibashi
发明人： Toshifumi Suganaga , Tetsuro Hanawa , Takeo Ishibashi
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/40
摘要： The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low.
摘要翻译：本发明改进了由稀疏和密集掩模图案之间的差异产生的OPE特性，并提高了图案设计中的保真度。因此，本发明包括在基板上形成具有酸解离抑制基团的抗蚀剂的步骤，用溶解在醇系溶剂中的酸性聚合物涂布抗蚀剂并形成上层膜的工序，通过掩模曝光，进行烘烤处理的步骤和用碱性显影剂处理的步骤，并且其中在进行烘烤处理的步骤中，通过上层膜在抗蚀剂上形成混合层，并且在在图案密度低的区域中，掩模图案的图案密度高的区域的未曝光部分中形成较厚的混合层。

10. 发明授权

US5429910A Method of forming a critical resist pattern 失效
标题翻译：形成临界抗蚀剂图案的方法
公开(公告)号：US5429910A
公开(公告)日：1995-07-04
申请号：US60118
申请日：1993-05-12
申请人： Tetsuro Hanawa
发明人： Tetsuro Hanawa
IPC分类号： G03F7/26 , G03F7/004 , G03F7/38 , H01L21/027
CPC分类号： G03F7/38 , G03F7/0045 , Y10S430/162
摘要： A resist pattern having an accurate rectangular sectional configuration and high dimension controllability can be formed using a conventional chemical amplification positive type resist. A chemical amplification positive type resist layer 3 including a base resin, and a protonic acid generating agent decomposed by photochemical reaction to generate protonic acid and a dissolution inhibitor is formed on a semiconductor substrate 2. Light 8 is selectively directed to the chemical amplification positive type resist layer 3 to form an image. The chemical amplification positive type resist layer 3 after irradiation of light 8 has its surface treated with an acid solution 1 so that the surface of the resist layer 3 includes acid. The chemical amplification positive type resist layer 3 treated with acid is baked and then developed to form a resist pattern 7.
摘要翻译：可以使用常规的化学放大正型抗蚀剂来形成具有精确的矩形截面形状和高尺寸可控性的抗蚀剂图案。在半导体衬底2上形成包含基础树脂和通过光化学反应分解产生质子酸的质子酸产生剂和抑制溶解剂的化学放大正型抗蚀剂层3，光8选择性地指向化学放大阳性型抗蚀剂层3以形成图像。光照射后的化学放大正型抗蚀剂层3用酸溶液1进行了表面处理，使得抗蚀剂层3的表面含有酸。用酸处理的化学放大正型抗蚀剂层3被烘烤，然后显影以形成抗蚀图案7。

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