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1. 发明授权

US5097317A Resin-sealed semiconductor device 失效
标题翻译：树脂密封半导体器件
公开(公告)号：US5097317A
公开(公告)日：1992-03-17
申请号：US552131
申请日：1990-07-13
申请人： Takamitsu Fujimoto , Shuichi Kita , Atsuko Noda , Hiroshi Koezuka
发明人： Takamitsu Fujimoto , Shuichi Kita , Atsuko Noda , Hiroshi Koezuka
IPC分类号： C08K3/08 , C08K3/36 , C08K7/14 , H01L23/29 , H01L23/31
CPC分类号： H01L23/3135 , C08K3/08 , C08K3/36 , C08K7/14 , H01L23/293 , H01L23/295 , H01L23/296 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L24/45 , H01L24/48 , H01L2924/01014 , H01L2924/01079 , H01L2924/1301 , H01L2924/181
摘要： A resin-sealed semiconductor device includes a semiconductor element mounted on a die frame, bonding wires and external wires connected to the bonding wires. The semiconductor element, the bonding wires and portions of the external leads are coated with porous silica gel impregnated with a sealing resin.
摘要翻译：树脂密封半导体器件包括安装在模具框架上的半导体元件，接合线和连接到接合线的外部线。半导体元件，接合线和外部引线的一部分用浸渍有密封树脂的多孔硅胶涂覆。

2. 发明授权

US5204218A Photosensitive resin composition 失效
标题翻译：感光树脂组合物
公开(公告)号：US5204218A
公开(公告)日：1993-04-20
申请号：US717281
申请日：1991-06-17
申请人： Teruhiko Kumada , Youko Tanaka , Hideo Horibe , Shigeru Kubota , Hiroshi Koezuka
发明人： Teruhiko Kumada , Youko Tanaka , Hideo Horibe , Shigeru Kubota , Hiroshi Koezuka
IPC分类号： G03F7/004 , G03F7/028 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0045
摘要： Disclosed herein is a photosensitive resin composition containing:a photobase generator expressed in the following general formula (I): ##STR1## where R.sub.1, R.sub.2 and R.sub.3 are individually selected from the group consisting of hydrogen, halogen, alkyl groups, alkenyl groups, alkinyl groups, phenyl groups and alkoxy groups; anda base-catalytic reaction compound which is cured or decomposed under basic conditions.
摘要翻译：本文公开了一种感光性树脂组合物，其含有：以下通式（I）表示的光碱产生剂：其中R 1，R 2和R 3分别选自氢，卤素，烷基，烯基基团，炔基，苯基和烷氧基; 和在碱性条件下固化或分解的碱催化反应化合物。

3. 发明授权

US5100762A Radiation-sensitive polymer and radiation-sensitive composition containing the same 失效
标题翻译：辐射敏感聚合物和含有它的辐射敏感组合物
公开(公告)号：US5100762A
公开(公告)日：1992-03-31
申请号：US549736
申请日：1990-07-09
申请人： Youko Tanaka , Shigeru Kubota , Hideo Horibe , Hiroshi Koezuka , Teruhiko Kumada
发明人： Youko Tanaka , Shigeru Kubota , Hideo Horibe , Hiroshi Koezuka , Teruhiko Kumada
IPC分类号： C08L43/00 , G03F7/004 , G03F7/075
CPC分类号： G03F7/075 , C08L43/00 , G03F7/0042
摘要： A radiation-sensitive polymer is capable of resistance to the dry etching when it is applied to form very fine patterns in VLSIs and other semiconductor devices, wherein the polymer is a radiation-sensitive polymer that contains at least one unit represented by the general formula (I): ##STR1## (where X is an alkyl group, a halogen atom or a halogenated alkyl group; R.sup.1 is an alkyl group, an alkoxy or an aryl group; R.sup.2 is carbon monoxide; M is Si, Ge, Sn, Ti, Mo or W; k is a number defined by the valence of (M minus 1); and l is zero or a positive integer), and which optionally contains at least one unit represented by the general formula (II): ##STR2## (where Y is an alkyl group, a halogen atom or a halogenated alkyl group; R.sup.3 is an alkyl group or an aryl group) and/or at least one unit represented by the general formula (III):--SO.sub.2 --R.sup.4 (III)(where R.sup.4 is a divalent alkyl or aryl group).
摘要翻译：当辐射敏感聚合物被施加以在VLSI和其它半导体器件中形成非常精细的图案时，能够耐干蚀刻，其中该聚合物是含有至少一个由通式表示的单元的辐射敏感性聚合物 I）：其中X是烷基，卤原子或卤代烷基; R 1是烷基，烷氧基或芳基; R 2是一氧化碳; M是Si，Ge， Sn，Ti，Mo或W; k是由（M-1）的化合价定义的数字; l是0或正整数），并且任选地含有至少一个由通式（II）表示的单元：（II）（其中Y是烷基，卤原子或卤代烷基; R3是烷基或芳基）和/或至少一个由通式（III）表示的单元： - SO 2 -R 4（III）（其中R 4是二价烷基或芳基）。

4. 发明授权

US5500537A Field-effect transistor with at least two different semiconductive organic channel compounds 失效
标题翻译：具有至少两种不同半导体有机通道化合物的场效应晶体管
公开(公告)号：US5500537A
公开(公告)日：1996-03-19
申请号：US372219
申请日：1993-07-30
申请人： Akira Tsumura , Hiroyuki Fuchigami , Hideharu Nobutoki , Hiroshi Koezuka
发明人： Akira Tsumura , Hiroyuki Fuchigami , Hideharu Nobutoki , Hiroshi Koezuka
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0035 , H01L51/0036 , H01L51/0516 , H01L51/0566 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： A field effect transistor has a channel between a source electrode and a drain electrode made from an organic semiconductor. In one form of the invention, the channel is a mixture of at least two different organic compounds. In another form of the invention, the channel is a lamination of at least two films of different organic compounds. The channel can also be a .pi.-conjugated block copolymer of at least two different types of monomers.
摘要翻译：场效应晶体管具有由有机半导体制成的源电极和漏电极之间的沟道。在本发明的一种形式中，通道是至少两种不同有机化合物的混合物。在本发明的另一种形式中，通道是至少两层不同有机化合物的层压。该通道也可以是至少两种不同类型的单体的π-共轭嵌段共聚物。

5. 发明授权

US06060333A Method of making a liquid crystal display including a field effect transistor 失效
标题翻译：制造包括场效应晶体管的液晶显示器的方法
公开(公告)号：US06060333A
公开(公告)日：2000-05-09
申请号：US228937
申请日：1999-01-12
申请人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
发明人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
IPC分类号： G02F1/1333 , G02F1/1368 , H01L27/28 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0036 , G02F1/1368 , H01L27/283 , H01L51/002 , H01L51/0035 , H01L51/0038 , H01L51/0508 , H01L51/0545 , H01L51/0558 , G02F2001/133302 , H01L51/0015 , H01L51/0541
摘要： A method of fabricating a liquid crystal display device including a field effect transistor includes forming a gate electrode on an electrically insulating substrate, the gate electrode being located in a transistor region of the substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode in the transistor region; forming a display electrode on the electrically insulating substrate in a display region of the substrate, adjacent the transistor region, the drain electrode being electrically connected to the display electrode; and forming, in the transistor region, a semiconductor film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes in the transistor region; arranging a transparent plate, including a transparent electrode, opposite and spaced from the .pi.-conjugated polymer film and the display electrode with the transparent electrode opposite the display electrode; and injecting a liquid crystal material between the transparent and display electrodes and between the transparent plate and the .pi.-conjugated polymer film.
摘要翻译：制造包括场效应晶体管的液晶显示装置的方法包括在电绝缘基板上形成栅电极，栅电极位于基板的晶体管区域中; 在基板上形成电绝缘膜并覆盖栅电极; 在晶体管区域中的栅电极的相对侧的电绝缘膜上形成源电极和漏电极; 在所述基板的显示区域中的所述电绝缘基板上形成与所述晶体管区域相邻的显示电极，所述漏极电极与所述显示电极连接; 以及在所述晶体管区域中在所述晶体管区域中在所述源极和漏极以及所述源极和漏极之间的所述电绝缘膜上形成π共轭聚合物的半导体膜; 布置透明板，包括透明电极，与透明电极相对并且与p1共轭聚合物膜和显示电极间隔开，透明电极与显示电极相对; 以及在所述透明显示电极之间以及所述透明板和所述π共轭聚合物膜之间注入液晶材料。

6. 发明授权

US5981146A Resist coating film 失效
标题翻译：抗蚀涂层
公开(公告)号：US5981146A
公开(公告)日：1999-11-09
申请号：US789560
申请日：1997-01-28
申请人： Teruhiko Kumada , Atsuko Sasahara , Youko Tanaka , Hideo Horibe , Shigeru Kubota , Hiroshi Koezuka , Tetsuro Hanawa
发明人： Teruhiko Kumada , Atsuko Sasahara , Youko Tanaka , Hideo Horibe , Shigeru Kubota , Hiroshi Koezuka , Tetsuro Hanawa
IPC分类号： G03F7/38 , G03F7/004 , G03F7/09 , G03F7/095 , H01L21/027 , G03C1/73
CPC分类号： H01L21/0274 , G03F7/0045 , G03F7/092 , G03F7/095 , Y10S430/122
摘要： When a fine pattern is formed by using a chemical-amplification-type resist film, fall of acid in the surface of the resist can be inhibited so that a fine pattern exhibiting an excellent shape is formed. A resist coating film containing a compound having a sulfonic acid group or a carbonic acid group is formed on a chemical-amplification-type resist film of a semiconductor substrate, followed by performing exposure.
摘要翻译：当通过使用化学放大型抗蚀剂膜形成精细图案时，可以抑制抗蚀剂表面中的酸的下降，从而形成表现出优异形状的精细图案。在半导体衬底的化学放大型抗蚀剂膜上形成含有具有磺酸基或碳酸基的化合物的抗蚀剂涂膜，然后进行曝光。

7. 发明授权

US4873556A Hetero-junction device 失效
标题翻译：异质结装置
公开(公告)号：US4873556A
公开(公告)日：1989-10-10
申请号：US178828
申请日：1988-03-25
申请人： Kenji Hyodo , Hiroshi Koezuka , Alan G. MacDiarmid
发明人： Kenji Hyodo , Hiroshi Koezuka , Alan G. MacDiarmid
IPC分类号： H01L29/267 , H01L51/00 , H01L51/30
CPC分类号： H01L51/0583 , H01L51/0035 , H01L51/0041
摘要： The present invention relates to a hetero-junction device comprising a hetero-junction formed at the interface of two .pi.-conjugated system polymers (A) and (B) wherein on the first .pi.-conjugated system polymer (A) a second .pi.-conjugated polymer (B) different from said polymer (A) is deposited thereby making it possible to control junction properties by altering the quantity of doping to the polymer.
摘要翻译：本发明涉及一种异质结器件，其包括在两个π共轭系统聚合物（A）和（B）的界面处形成的异质结，其中在第一π共轭体系上聚合物（A）为第二π-共轭沉积与所述聚合物（A）不同的聚合物（B），从而可以通过改变对聚合物的掺杂量来控制结合性能。

8. 发明授权

US6060338A Method of making a field effect transistor 失效
标题翻译：制作场效应晶体管的方法
公开(公告)号：US6060338A
公开(公告)日：2000-05-09
申请号：US228936
申请日：1999-01-12
申请人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
发明人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
IPC分类号： G02F1/1333 , G02F1/1368 , H01L27/28 , H01L51/30 , H01L21/335
CPC分类号： H01L51/0036 , G02F1/1368 , H01L27/283 , H01L51/002 , H01L51/0035 , H01L51/0038 , H01L51/0508 , H01L51/0545 , H01L51/0558 , G02F2001/133302 , H01L51/0015 , H01L51/0541
摘要： A method of fabricating a field effect transistor including forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; forming a semiconducting film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.
摘要翻译：一种制造场效应晶体管的方法，包括在电绝缘基板上形成栅电极; 在覆盖栅电极的基板上形成电绝缘膜; 在栅电极的相对侧的电绝缘膜上形成源电极和漏电极; 在源极和漏极上以及在源电极和漏极之间的电绝缘膜上形成π共轭聚合物的半导体膜。

9. 发明授权

US5948578A Photoresist 失效
标题翻译：光刻胶
公开(公告)号：US5948578A
公开(公告)日：1999-09-07
申请号：US813749
申请日：1991-12-30
申请人： Tetsuyuki Kurata , Hiroshi Koezuka
发明人： Tetsuyuki Kurata , Hiroshi Koezuka
IPC分类号： G03F7/004 , G03F7/025 , G03F7/09 , H01L21/027 , H01L21/30 , G03C3/00
CPC分类号： G03F7/091
摘要： A photoresist is applied on a substrate and exposed using a reduction optical system. The photoresist is adapted to have a non-linear optical effect in which the light absorption coefficient or the photochemical reaction efficiency changes non-linearly with respect to light intensity, the photoresist reacts to the second harmonic or the tertiary harmonic, or it presents a self convergence effect.
摘要翻译：将光致抗蚀剂施加在基板上并使用还原光学系统曝光。光致抗蚀剂适于具有非线性光学效应，其中光吸收系数或光化学反应效率相对于光强度非线性变化，光致抗蚀剂对二次谐波或三次谐波进行反应，或者呈现自身收敛效应。

10. 发明授权

US5892244A Field effect transistor including .pi.conjugate polymer and liquid crystal display including the field effect transistor 失效
标题翻译：包括π共轭聚合物和包括场效应晶体管的液晶显示器的场效应晶体管
公开(公告)号：US5892244A
公开(公告)日：1999-04-06
申请号：US835634
申请日：1997-04-10
申请人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
发明人： Toshihiko Tanaka , Syuji Doi , Hiroshi Koezuka , Akira Tsumura , Hiroyuki Fuchigami
IPC分类号： G02F1/1333 , G02F1/1368 , H01L27/28 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0036 , G02F1/1368 , H01L27/283 , H01L51/002 , H01L51/0035 , H01L51/0038 , H01L51/0508 , H01L51/0545 , H01L51/0558 , G02F2001/133302 , H01L51/0015 , H01L51/0541
摘要： The present invention relates to a field effect transistor (FET element) in which a .pi.-conjugated polymer film serving as a semiconductor layer is manufactured by first forming a .pi.-conjugated polymer precursor film using a .pi.-conjugated precursor which is soluble in a solvent and then changing the precursor polymer film to the .pi.-conjugated polymer film. A liquid crystal display apparatus uses the FET element as an active drive element. A large number of the FET elements can be manufactured on a large area substrate at the same time at lost cost and operate stably. A large current flow between the source and drain can be significantly modulated by a voltage applied to the gate of the FET element.
摘要翻译：本发明涉及一种场效应晶体管（FET元件），其中用作半导体层的π共轭聚合物膜通过首先使用可溶于溶剂的π共轭前体形成π共轭聚合物前体膜然后将前体聚合物膜改变为π共轭聚合物膜。液晶显示装置使用FET元件作为有源驱动元件。大量的FET元件可以在大面积基板上同时以损耗成本并且稳定地工作。可以通过施加到FET元件的栅极的电压来显着地调制源极和漏极之间的大电流。

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